50 results on '"Van Hove, Marleen"'
Search Results
2. Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
3. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
4. Power electronics with wide bandgap materials: Toward greener, more efficient technologies
5. On a more accurate assessment of scaled copper/low-k interconnects performance
6. Detection of Copper and Water in Low-k Dielectrics by Triangular Voltage Sweep Measurements
7. A New Ultra-Low K ILD Material Based On Organic-Inorganic Hybrid Resins
8. 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
9. Fast beam collinear laser-rf double resonance
10. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration.
11. Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs.
12. Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates.
13. Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs.
14. The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate.
15. Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs.
16. MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement.
17. Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs.
18. Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate.
19. Breakdown investigation in GaN-based MIS-HEMT devices.
20. Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky Diodes on 200 mm Si wafers by surface treatments.
21. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors.
22. Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate.
23. New source-side breakdown mechanism in AlGaN/GaN insulated-gate HEMTs.
24. High temperature behaviour of GaN-on-Si high power MISHEMT devices.
25. Detection of Copper and Water in Low-k Dielectrics by Triangular Voltage Sweep Measurements.
26. A New Ultra-Low K ILD Material Based On Organic-Inorganic Hybrid Resins.
27. Lithography aspects of dual-damascene interconnect technology.
28. Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress.
29. Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications.
30. Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With Al2O3 and Si3N4/Al2O3 Gate Dielectrics.
31. Stability Evaluation of Insulated Gate AlGaN/GaN Power Switching Devices Under Heavy-Ion Irradiation.
32. HBM ESD Robustness of GaN-on-Si Schottky Diodes.
33. Electrically active defects at AlN/Si interface studied by DLTS and ESR.
34. Zero-dimensional states in nanostructures constricted by double-barrier heterojunctions and H-isolation.
35. Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs.
36. High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates.
37. Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors.
38. Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs.
39. S-Parameter Measurement Based Quasistatic Large-Signal Cold HEMT Model for Resistive Mixer Design.
40. CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon.
41. A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si.
42. Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal.
43. Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-\mu\m Buffer Thickness by Local Substrate Removal.
44. Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal.
45. Silicon Substrate Removal of GaN DHFETs for Enhanced (> 1100 V) Breakdown Voltage.
46. Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.
47. Suspended AlGaN/GaN membrane devices with recessed open gate areas for ultra-low-power air quality monitoring.
48. Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs.
49. Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates.
50. Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.