395 results on '"Chen, Kevin J."'
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2. On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems
3. Gallium nitride-based complementary logic integrated circuits
4. Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering.
5. Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements.
6. Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
7. Overcoming the limitations of gallium oxide through heterogeneous integration
8. p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications.
9. Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors.
10. 2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current
11. Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure.
12. High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications
13. Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride.
14. Exploiting nanostructure-thin film interfaces in advanced sensor device configurations
15. Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors.
16. Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device.
17. GaN on Engineered Bulk Silicon Power Integration Platform With Avalanche Capability Enabled by Built-in Si PN Junctions.
18. Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack.
19. Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits
20. Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation.
21. Gate Reliability of Schottky-Type p -GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias.
22. Assessment of osteoarthritis functional outcomes and intra‐articular injection volume in the rat anterior cruciate ligament transection model.
23. 650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications.
24. GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits.
25. Monolithic Integration of Gate Driver and Protection Modules With P -GaN Gate Power HEMTs.
26. Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs.
27. Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC.
28. GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping.
29. Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p -Gan Gate HEMTs.
30. A tunable bandstop resonator based on a compact slotted ground structure
31. A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel [Al.sub.0.3][Ga.sub.0.7]N/[Al.sub.0.05][Ga.sub.0.95]N/GaN HEMTs
32. DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
33. Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition
34. A physical model for on-chip spiral inductors with accurate substrate modeling
35. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using C[F.sub.4] plasma treatment
36. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
37. Enhancement-mode AlGaN/GaN HEMTs on Silicon substrate
38. CAD equivalent-circuit modeling of attenuation and cross-coupling for edge-suspended coplanar waveguides on lossy silicon substrate
39. Miniaturized coplanar waveguide bandpass filters using multisection stepped-impedance resonators
40. Microwave characterization and modeling of high aspect ratio through-wafer interconnect vias in silicon substrates
41. AlGaN-GaN double-channel HEMTs
42. Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform.
43. GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion.
44. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process.
45. ON-Resistance Analysis of GaN Reverse-Conducting HEMT With Distributive Built-In SBD.
46. GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS
47. Threshold Voltage Instability of Enhancement-Mode GaN Buried p -Channel MOSFETs.
48. Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices.
49. High-performance InP-based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried-gate technologies
50. A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs
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