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Your search keyword '"Iwai, H"' showing total 49 results
Start Over Author "Iwai, H" Publication Type Electronic Resources
49 results on '"Iwai, H"'

1. Rate equation of steam-methane reforming reaction on Ni-YSZ cermet considering its porous microstructure

Author

00314229, Sugihara, S, Kawamura, Y, Iwai, H, 00314229, Sugihara, S, Kawamura, Y, and Iwai, H

Abstract

The steam-methane reforming reaction on a Ni-YSZ (yttria-stabilized zirconia) cermet was experimentally investigated in the temperature range of 650 to 750°C. We examined the effects of the partial pressures of methane and steam in the supply gas on the reaction rate. The porous microstructure of the Ni-YSZ cermet was quantified using an FIB-SEM technique. A power-law-type rate equation was obtained on the basis of the unit surface area of the Ni-pore contact surface in the cermet. The kinetics indicated a strong positive dependence on the methane partial pressure and a negative dependence on the steam partial pressure, in good agreement with the literature. The obtained rate equation successfully predicted the reaction characteristics of Ni-YSZ cermets having different microstructures.

Published
2016

2. Development of a charge-transfer distribution model for stack simulation of solid oxide fuel cells

Author

00314229, 10757636, Onaka, H, Iwai, H, Kishimoto, M, Saito, M, Yoshida, H, Brus, G, Szmyd, J S, 00314229, 10757636, Onaka, H, Iwai, H, Kishimoto, M, Saito, M, Yoshida, H, Brus, G, and Szmyd, J S

Abstract

An overpotential model for planar solid oxide fuel cells (SOFCs) is developed and applied to a stack numerical simulation. Charge-transfer distribution within the electrodes are approximated using an exponential function, based on which the Ohmic loss and activation overpotential are evaluated. The predicted current-voltage characteristics agree well with the experimental results, and also the overpotentials within the cell can reproduce the results obtained from a numerical analysis where the distribution of the charge-transfer current within the electrodes is fully solved. The proposed model is expected to be useful to maintain the accuracy of SOFC simulations when the cell components, consisting of anode, electrolyte and cathode, are simplified into one layer element.

Published
2016

3. Catalytic partial oxidation of methane on Ni-YSZ cermet anode of solid oxide fuel cells

Author

Iwai, H., Tada, K., Kishimoto, M., Saito, M., Yoshida, H., Iwai, H., Tada, K., Kishimoto, M., Saito, M., and Yoshida, H.

Abstract

The effects of oxygen addition to the methane fuels directly supplied to solid oxide fuel cells were investigated. Fundamental experiments were conducted using Ni-YSZ cermet as a typical anode material. The Ni-YSZ catalysts having different streamwise lengths were fabricated on the YSZ flat plates. Premixed gas of methane, oxygen, nitrogen and stream was supplied to the test catalyst set in a rectangular test channel. The exhaust gas compositions and the surface temperature distributions of the test catalyst were measured. It was found that the oxidation of methane prominently proceeded near the upstream edge of the catalyst followed by steam/dry reforming reactions downstream. It resulted in a formation of the high temperature region leading a large temperature gradient in the streamwise direction.

Published
2016

4. Complete nucleotide sequence of a new isolate of passion fruit woodiness virus from Western Australia

Author

Fukumoto, T., Nakamura, M., Wylie, S.J., Chiaki, Y., Iwai, H., Fukumoto, T., Nakamura, M., Wylie, S.J., Chiaki, Y., and Iwai, H.

Abstract

We determined the complete genome sequence of the passion fruit woodiness virus Gld-1 isolate (PWV-Gld-1) from Australia and compared it with that of PWV-MU-2, another Australian isolate of PWV. The genomes shared high sequence identity in both the complete nucleotide sequence and the ORF amino acid sequence. All of the cleavage sites of each protein were identical to those of MU-2, and the sequence identity for the individual proteins ranged from 97.2 % to 100.0 %. However, the 5′ untranslated region (5′UTR) of the Gld-1 isolate shared only 46.8 % sequence identity with that of PWV-MU-2 and was 177 nucleotides shorter. Re-sequencing of the 5′UTR of MU-2 revealed that the 5′ end of the original sequence includes an artifact generated by deep sequencing.

Published
2013

5. Complete nucleotide sequence of a new isolate of passion fruit woodiness virus from Western Australia

Author

Fukumoto, T., Nakamura, M., Wylie, S.J., Chiaki, Y., Iwai, H., Fukumoto, T., Nakamura, M., Wylie, S.J., Chiaki, Y., and Iwai, H.

Abstract

We determined the complete genome sequence of the passion fruit woodiness virus Gld-1 isolate (PWV-Gld-1) from Australia and compared it with that of PWV-MU-2, another Australian isolate of PWV. The genomes shared high sequence identity in both the complete nucleotide sequence and the ORF amino acid sequence. All of the cleavage sites of each protein were identical to those of MU-2, and the sequence identity for the individual proteins ranged from 97.2 % to 100.0 %. However, the 5′ untranslated region (5′UTR) of the Gld-1 isolate shared only 46.8 % sequence identity with that of PWV-MU-2 and was 177 nucleotides shorter. Re-sequencing of the 5′UTR of MU-2 revealed that the 5′ end of the original sequence includes an artifact generated by deep sequencing.

Published
2013

8. Heat transfer bibliography - Japanese works 2006

Author

Yoshida, H, Maruyama, S, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, Oda, Y, Yoshida, H, Maruyama, S, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, and Oda, Y

Published
2008

9. Heat transfer bibliography - Japanese works 2007

Author

Yoshida, H, Maruyama, S, Takeishi, K, Kunugia, T, Kawara, Z, Iwai, H, Saito, M, Oda, Y, Yoshida, H, Maruyama, S, Takeishi, K, Kunugia, T, Kawara, Z, Iwai, H, Saito, M, and Oda, Y

Published
2008

12. Heat transfer bibliography - Japanese works 2006

Author

50166964, 40301832, 10201451, 00314229, Yoshida, H, Maruyama, S, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, Oda, Y, 50166964, 40301832, 10201451, 00314229, Yoshida, H, Maruyama, S, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, and Oda, Y

Published
2008

13. Heat transfer bibliography - Japanese works 2005

Author

50166964, 40301832, 10201451, 00314229, 90314236, Yoshida, H, Maruyama, S, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, Oda, Y, 50166964, 40301832, 10201451, 00314229, 90314236, Yoshida, H, Maruyama, S, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, and Oda, Y

Published
2008

14. Heat transfer bibliography - Japanese works 2007

Author

50166964, 10201451, 00314229, 90314236, Yoshida, H, Maruyama, S, Takeishi, K, Kunugia, T, Kawara, Z, Iwai, H, Saito, M, Oda, Y, 50166964, 10201451, 00314229, 90314236, Yoshida, H, Maruyama, S, Takeishi, K, Kunugia, T, Kawara, Z, Iwai, H, Saito, M, and Oda, Y

Published
2008

17. Heat transfer bibliography - Japanese works 2004

Author

Suzuki, K, Nishio, S, Yoshida, H, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, Oda, Y, Suzuki, K, Nishio, S, Yoshida, H, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, and Oda, Y

Published
2006

18. Thermal stability of Gd2O3/Si(100) interfacial transition layer

Author

Nohira, H, Yoshida, T, Okamoto, H, Shinagawa, S, Sakai, W, Nakajima, K, Suzuki, M, Kimura, K, Aun, NJ, Kobayashi, Y, Ohmi, S, Iwai, H, Ikenaga, E, Takata, Y, Kobayashi, K, Hattori, T, Nohira, H, Yoshida, T, Okamoto, H, Shinagawa, S, Sakai, W, Nakajima, K, Suzuki, M, Kimura, K, Aun, NJ, Kobayashi, Y, Ohmi, S, Iwai, H, Ikenaga, E, Takata, Y, Kobayashi, K, and Hattori, T

Published
2006

19. Heat transfer bibliography - Japanese works 2003

Author

Suzuki, K, Nishio, S, Yoshida, H, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, Oda, Y, Suzuki, K, Nishio, S, Yoshida, H, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, and Oda, Y

Published
2006

20. Thermal stability of Gd2O3/Si(100) interfacial transition layer

Author

80293885, 00346040, 50127073, Nohira, H, Yoshida, T, Okamoto, H, Shinagawa, S, Sakai, W, Nakajima, K, Suzuki, M, Kimura, K, Aun, NJ, Kobayashi, Y, Ohmi, S, Iwai, H, Ikenaga, E, Takata, Y, Kobayashi, K, Hattori, T, 80293885, 00346040, 50127073, Nohira, H, Yoshida, T, Okamoto, H, Shinagawa, S, Sakai, W, Nakajima, K, Suzuki, M, Kimura, K, Aun, NJ, Kobayashi, Y, Ohmi, S, Iwai, H, Ikenaga, E, Takata, Y, Kobayashi, K, and Hattori, T

Published
2006

21. Heat transfer bibliography - Japanese works 2003

Author

50166964, 40301832, 10201451, 00314229, 90314236, Suzuki, K, Nishio, S, Yoshida, H, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, Oda, Y, 50166964, 40301832, 10201451, 00314229, 90314236, Suzuki, K, Nishio, S, Yoshida, H, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, and Oda, Y

Published
2006

22. Heat transfer bibliography - Japanese works 2004

Author

50166964, 40301832, 10201451, 00314229, 90314236, Suzuki, K, Nishio, S, Yoshida, H, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, Oda, Y, 50166964, 40301832, 10201451, 00314229, 90314236, Suzuki, K, Nishio, S, Yoshida, H, Takeishi, K, Kunugi, T, Kawara, Z, Iwai, H, Saito, M, and Oda, Y

Published
2006

26. Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer

Author

80293885, 00346040, 50127073, Hattori, T, Yoshida, T, Shiraishi, T, Takahashi, K, Nohira, H, Joumori, S, Nakajima, K, Suzuki, M, Kimura, K, Kashiwagi, I, Ohshima, C, Ohmi, S, Iwai, H, 80293885, 00346040, 50127073, Hattori, T, Yoshida, T, Shiraishi, T, Takahashi, K, Nohira, H, Joumori, S, Nakajima, K, Suzuki, M, Kimura, K, Kashiwagi, I, Ohshima, C, Ohmi, S, and Iwai, H

Published
2004

28. Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

Author

80293885, 00346040, 50127073, Nohira, H, Shiraishi, T, Takahashi, K, Hattori, T, Kashiwagi, I, Ohshima, C, Ohmi, S, Iwai, H, Joumori, S, Nakajima, K, Suzuki, M, Kimura, K, 80293885, 00346040, 50127073, Nohira, H, Shiraishi, T, Takahashi, K, Hattori, T, Kashiwagi, I, Ohshima, C, Ohmi, S, Iwai, H, Joumori, S, Nakajima, K, Suzuki, M, and Kimura, K

Published
2004

45. レントゲン解剖学 III

Author

イワイ, H, イワイ, K, マツイ, K, オノ, Y, ヨシムラ, M, コバラ, J, ヨコチ, C, Iwai, H, Iwai, K, Matsui, K, Ono, Y, Yoshimura, M, Kobara, J, Yokochi, C, 岩井, 博, 岩井, 喜美子, 松井, 謙吾, 小野, 滋, 吉村, 将文, 小原, 二郎, 横地, 千仭, イワイ, H, イワイ, K, マツイ, K, オノ, Y, ヨシムラ, M, コバラ, J, ヨコチ, C, Iwai, H, Iwai, K, Matsui, K, Ono, Y, Yoshimura, M, Kobara, J, Yokochi, C, 岩井, 博, 岩井, 喜美子, 松井, 謙吾, 小野, 滋, 吉村, 将文, 小原, 二郎, and 横地, 千仭

Published
1963

46. -FET: electrostatics and influence of spacer thickness.

Author

Laboratoire d'Electronique et des Technologies de l'Information (LETI) ; CEA, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (FEMTO-ST) ; CNRS - Université de Franche-Comté - Université de Technologie de Belfort-Montbeliard - Ecole Nationale Supérieure de Mécanique et des Microtechniques, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; CNRS - Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG), Tachi, K., Ernst, T., Dupre, C., Hubert, A., Becu, S., Iwai, H., Cristoloveanu, S., Faynot, O., Laboratoire d'Electronique et des Technologies de l'Information (LETI) ; CEA, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (FEMTO-ST) ; CNRS - Université de Franche-Comté - Université de Technologie de Belfort-Montbeliard - Ecole Nationale Supérieure de Mécanique et des Microtechniques, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; CNRS - Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG), Tachi, K., Ernst, T., Dupre, C., Hubert, A., Becu, S., Iwai, H., Cristoloveanu, S., and Faynot, O.

Abstract

International audience

47. Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires

Author

Département d'Astrophysique, de physique des Particules, de physique Nucléaire et de l'Instrumentation Associée (DAPNIA) ; CEA, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (FEMTO-ST) ; CNRS - Université de Franche-Comté - Université de Technologie de Belfort-Montbeliard - Ecole Nationale Supérieure de Mécanique et des Microtechniques, Science et Ingénierie des Matériaux et Procédés (SIMaP) ; Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG) - CNRS, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG) - CNRS, Laboratoire d'Electronique et des Technologies de l'Information (LETI) ; CEA, Tachi, K., Casse, M., Jang, D., Dupré, C., Hubert, A., Vulliet, N., Maffini-Alvaro, C., Vizioz, C., Carabasse, C., Delaye, V., M. Hartmann, J., Ghibaudo, G., Iwai, H., Cristoloveanu, S., Faynot, O., Ernst, T., Département d'Astrophysique, de physique des Particules, de physique Nucléaire et de l'Instrumentation Associée (DAPNIA) ; CEA, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (FEMTO-ST) ; CNRS - Université de Franche-Comté - Université de Technologie de Belfort-Montbeliard - Ecole Nationale Supérieure de Mécanique et des Microtechniques, Science et Ingénierie des Matériaux et Procédés (SIMaP) ; Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG) - CNRS, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG) - CNRS, Laboratoire d'Electronique et des Technologies de l'Information (LETI) ; CEA, Tachi, K., Casse, M., Jang, D., Dupré, C., Hubert, A., Vulliet, N., Maffini-Alvaro, C., Vizioz, C., Carabasse, C., Delaye, V., M. Hartmann, J., Ghibaudo, G., Iwai, H., Cristoloveanu, S., Faynot, O., and Ernst, T.

Abstract

National audience

48. Selected SOI puzzles and tentative answers

Author

Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG) - CNRS, Laboratoire d'Electronique et des Technologies de l'Information (LETI) ; CEA, Na, K.-I., Van Den Daele, W., Pham-Nguyen, L., Bawedin, M., Park, K.-H., Wan, J., Tacchi, K., Chang, S.-J., Ionica, I., Bae, Y.-H., Chroboczek, J.-A., Fenouillet-Beranger, C., Ernst, T., Augendre, E., Le Royer, C., Zaslavsky, A., Iwai, H., Cristoloveanu, S., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG) - CNRS, Laboratoire d'Electronique et des Technologies de l'Information (LETI) ; CEA, Na, K.-I., Van Den Daele, W., Pham-Nguyen, L., Bawedin, M., Park, K.-H., Wan, J., Tacchi, K., Chang, S.-J., Ionica, I., Bae, Y.-H., Chroboczek, J.-A., Fenouillet-Beranger, C., Ernst, T., Augendre, E., Le Royer, C., Zaslavsky, A., Iwai, H., and Cristoloveanu, S.

Abstract

International audience

49. First experimental demonstration of negative capacitance InGaAs MOSFETs with Hf0.5Zr0.5O2 ferroelectric gate stack

Author

Luc, Q. H., Fan-Chiang, C. C., Huynh, S. H., Huang, P., Do, H. B., Ha, M. T. H., Jin, Y. D., Nguyen, T. A., Zhang, K. Y., Wang, H. C., Lin, Y. K., Lin, Y. C., Hu, C., Iwai, H., Chang, E. Y., Luc, Q. H., Fan-Chiang, C. C., Huynh, S. H., Huang, P., Do, H. B., Ha, M. T. H., Jin, Y. D., Nguyen, T. A., Zhang, K. Y., Wang, H. C., Lin, Y. K., Lin, Y. C., Hu, C., Iwai, H., and Chang, E. Y.

Abstract

We demonstrate, for the first time, the negative capacitance (NC) In 0.53 Ga 0.47 As nMOSFET with 8-nm Hf 0.5 Zr 0.5 O 2 (HZO) as ferroelectric (FE) dielectric for sub-60 mV/dec subthreshold swing (SS). The impact of annealing treatments on the FE properties and electrical characteristics of NC InGaAs nMOSFETs are investigated. Optimized annealing condition results in NC effects at the HZO/Al 2 O 3 /InGaAs nMOSFETs with steep SS property (~ 11 mV/dec).

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