33 results on '"Luigi Mariucci"'
Search Results
2. Flexible fully organic indirect detector for megaelectronvolts proton beams
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Sabrina Calvi, Laura Basiricò, Sara M. Carturan, Ilaria Fratelli, Antonio Valletta, Alberto Aloisio, Stefania De Rosa, Felix Pino, Marcello Campajola, Andrea Ciavatti, Luca Tortora, Matteo Rapisarda, Sandra Moretto, Matteo Verdi, Stefano Bertoldo, Olivia Cesarini, Paolo Di Meo, Massimo Chiari, Francesco Tommasino, Ettore Sarnelli, Luigi Mariucci, Paolo Branchini, Alberto Quaranta, and Beatrice Fraboni
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Electronics ,TK7800-8360 ,Materials of engineering and construction. Mechanics of materials ,TA401-492 - Abstract
Abstract A flexible, fully organic detector for proton beams is presented here. The detector operates in the indirect mode and is composed of a polysiloxane-based scintillating layer coupled to an organic phototransistor, that is assessed for flexibility and low-voltage operation (V = −1 V), with a limit of detection of 0.026 Gy min−1. We present a kinetic model able to precisely reproduce the dynamic response of the device under irradiation and to provide further insight into the physical processes controlling it. This detector is designed to target real-time and in-situ dose monitoring during proton therapy and demonstrates mechanical flexibility and low power operation, assessing its potential employment as a personal dosimeter with high comfort and low risk for the patient. The results show how such a proton detector represents a promising tool for real-time particle detection over a large area and irregular surfaces, suitable for many applications, from experimental scientific research to innovative theranostics.
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- 2023
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3. Non-Quasi-Static Modeling of Printed OTFTs
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Antonio Valletta, Matteo Rapisarda, Mattia Scagliotti, Guglielmo Fortunato, Luigi Mariucci, Andrea Fabbri, Paolo Branchini, and Sabrina Calvi
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SPICE modeling ,non-quasi-static modeling ,organic thin-film-transistors ,printed organic electronics ,large signal model ,Electrical engineering. Electronics. Nuclear engineering ,TK1-9971 - Abstract
A non-quasi-static compact model well suited for the simulation of the electrical behavior of printed organic thin-film transistors (OTFTs) is proposed and validated. The model is based on the discretization of the current continuity equation by using a spline collocation approach while the electrical transport in the organic semiconductor is described by the variable range hopping theory. The model accounts for the presence of parasitic regions that are often found in the layouts of printed OTFTs due to large process tolerances. The model has been implemented in the Verilog-A language and has been validated by a comparison with the capacitance vs. voltage (small signal) characteristics of the devices and measurements made on OTFT-based common-source amplifiers (large signal). A comparison with a quasi-static version of the model is reported.
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- 2023
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4. Organic Solvent Free Synthesis and Processing of Semiconducting Polymers for Field Effect Transistors in Waterborne Dispersions
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Chiara Ceriani, Mattia Scagliotti, Tommaso Losi, Alessandro Luzio, Sara Mattiello, Mauro Sassi, Nicolò Pianta, Matteo Rapisarda, Luigi Mariucci, Mario Caironi, and Luca Beverina
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conjugated polymers ,dispersion polymerization ,micellar catalysis ,organic field effect transistors ,processing from water ,sustainability ,Electric apparatus and materials. Electric circuits. Electric networks ,TK452-454.4 ,Physics ,QC1-999 - Abstract
Abstract Conjugated semiconducting polymers are key active materials for printable electronics, sensors and biosensors, organic photovoltaics, organic light emitting devices, and more. The research in the field developed very efficient materials and sound structure property relationships, thus making a case for a transition from laboratory to industrial environment. At this critical juncture, sustainability, and ease of scaling up are at least as important as performances, to the point that efficient materials on a lab scale could become unpractical for the industry. The development of more efficient synthetic protocols and the complete removal of all organic solvents from both the synthesis and the processing of semiconducting polymers can help tremendously to improve sustainability and reduce costs. It is shown that the use of an aqueous dispersion of the food grade surfactant lecithin as the medium, enables the synthesis and processing of the representative semiconducting alternating copolymer poly (9,9‐dioctylfluorene‐alt‐bithiophene) (PF8T2) in high yield and high quality and with transistor performances comparable with those obtained with reference materials synthetized and processed from volatile organic solvents.
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- 2023
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5. Flexible Organic Phototransistors With Limit of Detection Down to 28 pW/cm2
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Mattia Scagliotti, Antonio Valletta, Sabrina Calvi, Luigi Mariucci, and Matteo Rapisarda
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Electrical and Electronic Engineering ,Instrumentation - Published
- 2023
6. Logic gates and memory elements design and simulation using PMOS organic transistor.
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Paolo Branchini, Andrea Fabbh, Domenico Riondino, Luigi Mariucci, Matteo Rapisarda, Antonio Valletta, Alberto Aloisio, and Francesco Di Capua
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- 2017
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7. A large signal non quasi static model of printed organic TFTs and simulation of CMOS circuits.
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Antonio Valletta, Matteo Rapisarda, Sabrina Calvi, Luigi Mariucci, and Guglielmo Fortunato
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- 2017
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8. A large signal non quasi static compact model for printed organic thin film transistors.
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Antonio Valletta, Matteo Rapisarda, Sabrina Calvi, Luigi Mariucci, and Guglielmo Fortunato
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- 2016
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9. Hybrid Electrothermal Simulations of GaN HEMT Devices Based on Self-Heating Free Virtual Electrical Characteristics
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Marco Peroni, Antonio Valletta, Valentina Mussi, Matteo Rapisarda, Claudio Lanzieri, Guglielmo Fortunato, Andrea Lucibello, Marco Natali, and Luigi Mariucci
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Coupling ,Materials science ,business.industry ,Gallium nitride ,High-electron-mobility transistor ,Temperature measurement ,Finite element method ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,Thermal ,Optoelectronics ,Transient (oscillation) ,Electrical and Electronic Engineering ,business ,Electronic circuit - Abstract
The electrothermal behavior of gallium nitride (GaN) HEMTs has been simulated by using a hybrid approach in which the problem is solved by coupling together an effective model (for the electrical part) and a 3-D finite element model (for the thermal part). The effective model relies on the estimation of the channel current at different temperatures in the absence of thermal gradients. This regime occurs in real devices only during the very initial stage of bias pulses, when self-heating effects are not yet developed, for time intervals shorter than 1 ns. Virtual output electrical characteristic, in which self-heating effects are negligible, have been derived from pulsed measurements of the electrical output characteristics and electrothermal transient simulations. The maximum temperature because of self-heating evaluated by using the virtual output characteristic are substantially higher than those obtained using the short time-pulsed measurements directly. The results have been validated by a comparison with temperature measurements obtained using Raman thermography. This approach has proven to be numerically very efficient and fast, allowing the analysis of realistic complex structures and circuits.
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- 2021
10. Historical evolution of pulsed laser annealing for semiconductor processing
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Vittorio Privitera, Luigi Mariucci, Guglielmo Fortunato, Alessandro Pecora, and Frank Simon
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Amorphous silicon ,Materials science ,Transistor ,engineering.material ,Laser ,Engineering physics ,law.invention ,Active matrix ,Annealing (glass) ,chemistry.chemical_compound ,Polycrystalline silicon ,CMOS ,chemistry ,Thin-film transistor ,law ,Hardware_INTEGRATEDCIRCUITS ,engineering - Abstract
In this chapter the historical evolution over more than 30 years of pulsed laser annealing for semiconductor processing has been reviewed. After describing the main physical aspects of the laser annealing process, some of the more relevant key technologies, i.e., excimer lasers and optical systems to manipulate the laser beam, are discussed. The chapter is then focused on two major applications of semiconductor industry: the first dealing with the amorphous silicon transformation into polycrystalline silicon for the thin-film transistor (TFT) technology and the second aiming to the dopant activation in CMOS technology for both logic and power MOS applications. In the case of polysilicon technology, the advantages offered by excimer laser annealing have guaranteed the establishment of industrial production of displays based on polysilicon TFTs active matrix. In the case of CMOS applications, excimer laser annealing in Si melting regime was shown to provide a number of advantages with respect to other annealing methods, but industrial production has not yet started due to a number of issues. Several techniques have been proposed to solve many of these issues, resulting, however, in an increased complexity of the process. These technological achievements have paved the way to further developments and renewed interest in excimer laser annealing.
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- 2021
11. Electrical instability in short channel organic thin-film transistors induced by lucky-polaron mechanism
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Matteo Rapisarda, Luigi Mariucci, Guglielmo Fortunato, Antonio Valletta, Sabrina Calvi, Gino Giusi, and A. La Magna
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Materials science ,Settore FIS/03 ,Condensed matter physics ,Gate dielectric ,Field effect ,General Chemistry ,Condensed Matter Physics ,Subthreshold slope ,Electronic, Optical and Magnetic Materials ,Threshold voltage ,Organic TFTs ,Bias stress ,Biomaterials ,Organic semiconductor ,Electric field ,Polaron ,Materials Chemistry ,Electrical and Electronic Engineering ,AND gate ,Voltage - Abstract
In this work we study the electrical stability under both gate bias stress and gate and drain bias stress of short channel (L = 5 μm) bottom contact/top gate OTFTs made on flexible substrate with solution-processed organic semiconductor and fluoropolymer gate dielectric. These devices show high field-effect mobility (μFE> 1 cm2V−1s−1) and excellent stability under gate bias stress (bias stress Vds = 0V). However, after prolonged bias stress performed at high drain voltage, Vds, the transfer characteristics show a decreased threshold voltage, degradation of the subthreshold slope and an apparent increase in the field effect mobility. Furthermore, the output characteristics show an asymmetry when measured in forward and reverse mode. These experimental results can be explained considering that the bias stress induces the damage of a small part of the device channel, localized close to the source contact. The analysis of the experimental data through 2D numerical simulations supports this explanation showing that the electrical characteristics after bias stress at high Vds can be reproduced considering the creation of donor-like interface states and trapping of positive charge into the gate dielectric at the source end of the device channel. In order to explain this degradation mechanism, we suggest a new physical model that, assuming holes injection from the source contact into the channel in bounded polarons, envisages the defect creation at the interface near the source end of the channel induced by injection of holes that gained energy from both the high longitudinal electric fields and the polaron dissolution.
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- 2021
12. Effects of illumination on the electrical characteristics in organic thin-film transistors based on dinaphtho [2,3-b:2′,3′-f] thieno[3,2-b] thiophene (DNTT): Experiment and modeling
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Houaida Becharguia, Mounira Mahdouani, Ramzi Bourguiga, Paolo Branchini, Andrea Fabbri, Stefania De Rosa, Sabrina Calvi, Luigi Mariucci, Antonio Valletta, Luca Tortora, Becharguia, Houaida, Mahdouani, Mounira, Bourguiga, Ramzi, Branchini, Paolo, Fabbri, Andrea, De Rosa, Stefania, Calvi, Sabrina, Mariucci, Luigi, Valletta, Antonio, and Tortora, Luca
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Mechanics of Materials ,Mechanical Engineering ,Materials Chemistry ,Metals and Alloys ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials - Abstract
The electrical properties of dinaphtho [2,3-b:2′ ,3′ -f]thieno[3,2-b]thiophene (DNTT) based organic thin film transistors (DNTT-TFTs) were investigated in detail under dark and various light illumination conditions with different channel lengths. We have exploited the experimental curves current–voltage of our TFT to extract electrical parameters such us mobility, threshold voltage, sub-threshold voltage and trapped density in dark and under illumination. By using an analytical model, we are able to reproduce very accurately the output and transfer characteristics with a joint analysis of the L = 100 μm and L = 500 μm electrical characteristics, the dependence of the contact resistance (Rc) upon the illumination conditions has been extracted. The used model gives a good agreement between the measured current–voltage characteristics of the DNTT-TFTs and those modeled in all measurement conditions (in dark and under illumination).
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- 2022
13. Gravure printed organic thin film transistors: Study on the ink printability improvement
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Luigi Mariucci, Valentina Preziosi, Antonio Cassinese, Antonio Valletta, Francesco Maita, Guglielmo Fortunato, Sabrina Calvi, Matteo Rapisarda, Calvi, S., Maita, F., Rapisarda, M., Fortunato, G., Valletta, A., Preziosi, V., Cassinese, A., and Mariucci, L.
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Organic inks ,Materials science ,Organic thin film transistor ,Organic thin film transistors ,02 engineering and technology ,Dielectric ,Fluid dynamic parameters ,010402 general chemistry ,01 natural sciences ,Biomaterials ,Materials Chemistry ,Deposition (phase transition) ,Electronics ,Electrical and Electronic Engineering ,Electrical conductor ,Organic ink ,Inkwell ,business.industry ,Process (computing) ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Gravure printing ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Characterization (materials science) ,Thin-film transistor ,ComputingMethodologies_DOCUMENTANDTEXTPROCESSING ,Optoelectronics ,Fluid dynamic parameter ,Rheology ,0210 nano-technology ,business - Abstract
Organic material deposition by gravure printing is a promising pathway for the realization of large area flexible electronic devices. Nevertheless, in order to achieve high performance it is required to improve the electronic ink printability, operating on the fluid dynamic mechanisms involved during the process. In this work, this issue has been faced working on ink characteristics for a conductive and a dielectric material. The suitable ink features have been defined studying the influence on the printability of the different forces that act in the fluid during the printing process, using an experimental approach. Properly defined ink formulations have been printed, considering different shapes and dimensions of the cells on the gravure cliche to fit the ink features. The printing outcomes have been compared and analysed through the evaluation of several significant fluid dynamic parameters and the rheological characterization of the materials. Finally, exploiting the results of this study, high performance fully printed organic thin film transistors have been realized.
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- 2018
14. (Invited) Non Quasi Static Modeling of Printed Organic Thin Film Transistors in Large Signal and Small Signal Operation
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P. Branchini, Antonio Valletta, Sabrina Calvi, Luigi Mariucci, Andrea Fabbri, Matteo Rapisarda, and Guglielmo Fortunato
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Materials science ,business.industry ,Thin-film transistor ,Optoelectronics ,business ,Signal ,Quasistatic process - Abstract
As one of the main expected advantages of organic electronics is the low cost, printing technologies are actively investigated for the fabrication of OTFTs. Techniques such as ink-jet or gravure printing frequently results in organic semiconductor (OSC) layers with low crystallinity and relatively low carrier mobility. Moreover, the minimal feature sizes attainable are often in the range of the tens of microns. Hence, the resulting carrier transit time (τ) in the channel of OTFTs can be of the order of tenth of milliseconds with associated cut off frequencies in AC regime in the range of few kilohertz [1]. Due to the large tolerances associated to printing processes, the layout of printed OTFTs often includes semiconductor regions whose dimensions are chosen prudently larger than the spacing existing between the source and drain contacts. The presence of the parasitic regions, that is negligible in DC operation, must be accounted in order to accurately reproduce the dynamic operation of these devices. Due to the relatively high value of τ, it is very likely that in practical applications organic circuits are operated with signals varying on a time scale of the same order or shorter than τ. Hence, the carriers in the device don’t have enough time to reach the distribution associated to stationary conditions and the OTFTs enter in non quasi static (NQS) regime of operation. The device response to large variation of its polarization (large signal, LS) becomes dependent on the delay times associated with the high value of τ. Moreover, in NQS regime the device effective admittance in small signal (SS) AC operation is found to be dependent upon the small signal frequency [2][3]. Hence, to successfully design electrical circuits employing printed OTFTs, it is necessary to develop compact models that are able to precisely reproduce not only the DC operation but also the LS and SS AC behavior of these devices. In this work, a large signal non quasi static (LS-NQS) compact model has been developed: the model is based on the current continuity equation that, in the case of a MOSFET transistor channel, can be cast as a partial differential equation (PDE) governing the carrier density distribution during time, Q(x,t), in a distributed RC transmission line. In order to solve this PDE, the space variable x is discretized by using a spline collocation approach: the PDE is transformed in a set of ordinary differential equations (ODE) in the time variable t, that can be solved numerically in a “SPICE-like” circuit simulation environment [4], [5]. The spline collocation approach allows to choose the number of splines (N) in which the device channels and the parasitic regions are split: by choosing an appropriate value for N it is possible to find the best compromise between computation accuracy and performance. NQS models have been already investigated and developed for crystalline silicon MOSFETs. The model presented in this work differs from the crystalline silicon counterparts in two major aspects: 1 – the equations accounting for the charge and current densities are based upon the variable range hopping (VRH) theory that is well suited for amorphous organic semiconductors[6]. 2 – the model takes into account the presence of parasitic regions by imposing appropriate boundary conditions on their extremities. The LS-NQS model has been implemented in Verilog-A and validated by simulating the electrical behavior of multi-fingered OTFTs, with staggered top-gate configuration, fabricated on PEN substrates by means of a fully printed process. The devices were characterized and simulated in DC, and SS AC operation. A common source amplifier circuit has been realized and measured in LS operation. As can be seen from fig. 1, the model reproduce perfectly the device behavior in LS operation. Moreover, the use of the model has permitted to gain several physical insights concerning the device operation. [1] J. S. Chang et al., IEEE J. Emerg. Sel. Top. Circuits Syst., vol. 7, no. 1, pp. 7–26, Mar. 2017, doi: 10.1109/JETCAS.2017.2673863. [2] A. Valletta et al., IEEE Trans. Electron Devices, vol. 61, no. 12, pp. 4120–4127, Dec. 2014, doi: 10.1109/TED.2014.2364451. [3] J. Leise et al., IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4672–4676, Nov. 2020, doi: 10.1109/TED.2020.3018094 [4] A. Valletta et al. in 2016 46th European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, Sep. 2016, pp. 460–463, doi: 10.1109/ESSDERC.2016.7599685. [5] A. Valletta et al. in 2017 European Conference on Circuit Theory and Design (ECCTD), Catania, Sep. 2017, pp. 1–4, doi: 10.1109/ECCTD.2017.8093225. [6] F. Torricelli et al., IEEE Trans. Electron Devices, vol. 56, no. 1, pp. 20–30, Jan. 2009, doi: 10.1109/TED.2008.2007717. Figure 1
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- 2021
15. (Invited) Photo Induced Effects in OTFTs: Mechanisms and Applications
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Luigi Mariucci, Guglielmo Fortunato, Antonio Valletta, Matteo Rapisarda, Sabrina Calvi, P. Branchini, and Sara Carturan
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The technology based on organic devices and sensors is becoming attractive for a wide range of applications. Indeed, the intrinsic characteristics of the organic materials, as the low-temperature process, flexibility, lightweight, biocompatibility, and even biodegradability, make them the basis for devices for the emerging flexible plastic electronics. Among the different possible applications, the electro-optical properties of organic semiconductors can be exploited for the development of devices for photosensing [1], imaging array [2], and optical memory [3]. The wide number of organic materials with different absorption spectra allows the development of photosensors with large spectral sensitivity or tuned to specific wavelengths. In particular, organic phototransistors (OPTs) are particularly promising since they combine light detection, typical of the photodiodes (OPD), with the intrinsic signal amplification that increases the device sensitivity. The response of the OPTs to light irradiation was widely studied in the last years. The photons with energy above the optical gap generate excitons that can dissociate into free holes and electrons and, in p-type devices, the photo-generated electrons are trapped. Negative trapped charges induce the shift of the flat band voltage as well as the threshold voltage of the OPT resulting in the increase of the drain current [4]. The location and the nature of the defect states are still under investigation. Depending on the organic semiconductor, gate dielectric and device structure, the defects have been identified as interface states between semiconductor and insulators [2], defects into the semiconductors [3], defects induced by the diffusion of oxygen or moisture into the OSC [5]. Trapped charge near the source/drain electrodes can also reduce the injection contact barrier, increasing the drain current [6]. In any case, photo-induced effects appear to be a quite general effect since they are observed in devices with different semiconductor molecules and different gate dielectric (both organic and inorganic). In this presentation, the different mechanisms will be reviewed and the photo-induced effects will be discussed for OTFTs with evaporated and solution-processed semiconductors and different device structures. The high stability of these devices under gate bias stress, allows to investigate in detail the effects induced by the light. Furthermore, this presentation will show the application of the electro-optical properties of the OTFTs to the development of radiation detectors based on Organic Photo Transistors (OPTs), made on flexible substrate, and coupled with plastic scintillators. The OPTs are based on organic semiconductor dinaphtho [2,3-b:2′,3′-f] thieno[3,2-b] thiophene (DNTT) and have Bottom Gate/Top contact multi-finger device structure in order to simplify the device coupling with scintillator and increase the device area. The channel length, L, and channel width, W, are 100 µm and 2 cm, respectively. The gate, source and drain, and the semiconductor layer (DNTT, 30 nm thick) are thermally evaporated through metal masks. Spin coated layers of Cytop are used as gate dielectric and passivation layer. Thanks to the high quality of the semiconductor and of the dielectric/semiconductor interface, the devices show good electrical characteristics, with field effect mobility of about 1 cm2/Vs, a threshold voltage of the order of -10 V and subthreshold voltage of about 1V/dec. Furthermore, the devices do not show hysteresis of the transfer characteristics and are quite stable under bias stress. The OPTs have been characterized by electrical and optical measurement in order to evaluate the figures of merit parameters of the photodetectors, such as the photo-switching speed, the responsivity, and the photocurrent on/off ratio (also indicated as photosensitivity). The measurements have been carried out under monochromatic light with λ= 450 nm (above the optical gap of the DNTT). At this wavelength, these OPTs are able to detect very low light intensity (of the order of few nW/cm2), with a responsivity of 0.25 A/W and sensitivity of 2x10-2. The OPTs are successfully coupled with siloxane based scintillator. This work is supported by INFN-CNS5 project "FIRE". [1] J. Huang et al., Adv. Mater. 2020, 32, 1906027 [2] Y. Chu et al., Adv. Sci. 2016, 3, 1500435 [3] K. Pei et al., Adv. Mater. 2018, 30, 1706647 [4] A. Pierre and A.C. Arias, Flex. Print. Electron 1 (2016) 043001 [5] R. Jia and e. al., Adv. Funct. Mater., vol. 29, p. 1905657, 2019. [6] X. Wang et al., J. Appl. Phys. 107, 024509 (2010).
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- 2021
16. A DC and small signal AC model for organic thin film transistors including contact effects and non quasi static regime
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Matteo Rapisarda, Guglielmo Fortunato, Luigi Mariucci, Mattia Frasca, A. Ciccazzo, Giovanni Maira, Antonio Valletta, and Sabrina Calvi
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DC model ,Materials science ,Contact effects ,parasitic capacitance ,Schottky barrier ,Organic thin film transistors ,02 engineering and technology ,Hybrid-pi model ,01 natural sciences ,Signal ,Non-quasi static small signal model ,Biomaterials ,AC model ,Parasitic capacitance ,Transmission line ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,Materials Chemistry ,Electrical and Electronic Engineering ,Electrical impedance ,010302 applied physics ,business.industry ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Organic semiconductor ,Thin-film transistor ,Optoelectronics ,0210 nano-technology ,business - Abstract
We present a compact model for the DC and small signal AC analysis of Organic Thin Film Transistors (OTFTs). The DC part of the model assumes that the electrical current injected in the OTFT is limited by the presence of a metal/organic semiconductor junction that, at source, acts as a reverse biased Schottky junction. By including this junction, modeled as a reverse biased gated diode at source, the DC model is able to reproduce the scaling of the electrical characteristics even for short channel devices. The small signal AC part of the model uses a transmission line approach in order to compute the impedances of the channel and parasitic regions of the device. The overlap capacitances and the presence of non-ideal metal/organic semiconductor junctions are taken in account as well and the model can be easily adapted to different device geometries. The model is particularly well suited for printed devices, often realized with large process tolerances, since it takes into consideration the presence of parasitic regions and their effect on the AC operation. The model has been validated on printed OTFTs using a pentace-derivative as organic semiconductor with a quite peculiar device layout. It has been fully implemented in Verilog-A programming language.
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- 2017
17. A Compact SPICE Model for Organic TFTs and Applications to Logic Circuit Design
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Antonio Valletta, Ahmet Samil Demirkol, Luigi Occhipinti, Luigi Mariucci, Giovanni Maira, Mattia Frasca, Vincenzo Vinciguerra, Luigi Fortuna, Guglielmo Fortunato, Occhipinti, Luigi [0000-0002-9067-2534], and Apollo - University of Cambridge Repository
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Transistor model ,Materials science ,Flexible electronics ,organic thin film transistors ,SPICE modeling ,Spice ,Semiconductor device modeling ,Hardware_PERFORMANCEANDRELIABILITY ,02 engineering and technology ,Ring oscillator ,Integrated circuit ,01 natural sciences ,law.invention ,Computer Science::Hardware Architecture ,Computer Science::Emerging Technologies ,law ,0103 physical sciences ,Electronic engineering ,Hardware_INTEGRATEDCIRCUITS ,Electrical and Electronic Engineering ,010302 applied physics ,Channel length modulation ,business.industry ,Transistor ,Schottky diode ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Computer Science Applications ,Logic gate ,Inverter ,Optoelectronics ,0210 nano-technology ,business ,Hardware_LOGICDESIGN - Abstract
This work introduces a compact DC model developed for organic thin film transistors (OTFTs) and its SPICE implementation. The model relies on a modified version of the gradual channel approximation that takes into account the contact effects, occurring at nonohmic metal/organic semiconductor junctions, modeling them as reverse biased Schottky diodes. The model also comprises channel length modulation and scalability of drain current with respect to channel length. To show the suitability of the model, we used it to design an inverter and a ring oscillator circuit. Furthermore, an experimental validation of the OTFTs has been done at the level of the single device as well as with a discrete-component setup based on two OTFTs connected into an inverter configuration. The experimental tests were based on OTFTs that use small molecules in binder matrix as an active layer. The experimental data on the fabricated devices have been found in good agreement with SPICE simulation results, paving the way to the use of the model and the device for the design of OTFT-based integrated circuits.
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- 2016
18. The Role of Defective Regions Near the Contacts on the Electrical Characteristics of Bottom-Gate Bottom-Contact Organic TFTs
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Matteo Rapisarda, Guglielmo Fortunato, Antonio Valletta, Sabrina Calvi, and Luigi Mariucci
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010302 applied physics ,Materials science ,Computer simulation ,business.industry ,Schottky barrier ,Transistor ,Contact resistance ,Electrical engineering ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,law.invention ,Semiconductor ,law ,Thin-film transistor ,0103 physical sciences ,WoS ,Density of states ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Ohmic contact - Abstract
We studied, by 2D numerical simulations, the effects of poor semiconductor morphology near the source and drain contacts of BGBC-OTFTs. The variations of the electrical characteristics and of the path of the injected carriers in the transistor channel have been analyzed considering different defective regions, parameters (mobility, density of states) and contact thicknesses. The results showed that 100 nm wide defective regions can induce high contact resistance, resulting in large variation in the electrical characteristics. However, the typical S-shape in the low-Vds output characteristics is clearly observed only considering a combination of highly defected regions and Schottky barrier at the contacts. Furthermore, the simulations showed that most of the current is injected and extracted, at the source and drain contact, within a few nanometers from the semiconductor- dielectric interface. This explains the small influence of the contact thickness on the simulated electrical characteristics, at least for a contact thickness down to 10 nm.
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- 2016
19. Three-Dimensional Chemical Mapping of OTFT on Modified Hydrophobic Flexible Polymeric Substrate by Low Energy Cs+ Ion Sputtering
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Luca Tortora, Marco Urbini, Mario Barra, Antonio Cassinese, Paolo Branchini, Alberto Aloisio, Fabio Chiarella, Luigi Mariucci, Matteo Rapisarda, Andrea Fabbri, and Francesco Di Capua
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Here, electron-transporting semiconducting organic channels made of N,N′-1H, 1H-perfluorobutyl dicyanoperylenecarboxydiimmide (PDIF-CN2) molecules were thermally evaporated on flexible polyethylene-naphtalate (PEN) plastic substrates equipped with gold (Au) electrodes. This multilayer structure represents the basic component for the fabrication of staggered top-gate n-type organic thin-film transistors (OTFTs) to be completed with the addition of a polymeric dielectric layer and an aluminum gate electrode. PEN substrate was treated with hexamethyldisilazane (HMDS) in order to make it more hydrophobic. Indeed, the hydrophobized surface of the plastic substrate was shown to induce a more ordered supramolecular structure of the semiconductor layer during the evaporation process. The hybrid organic/inorganic formally trilayer non-passivated OTFT structure was successfully profiled in a single run through ToF-SIMS depth profiling experiments with low energy cesium ions. High mass molecular fragment ions were obtained and used as indicators of interfaces, leading to an increase of information on molecular specificity. The HMDS surface modification was clearly detected and spatially located. Finally, a chemometric approach was also adopted to evaluate depth profiling data. In particular, principal component analysis (PCA) and K-means algorithm were tested as innovative method for the identification of molecular fragments useful for the OTFT multi-layer structure characterization and the determination of the number of OTFT layers, respectively.
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- 2018
20. Three-dimensional characterization of OTFT on modified hydrophobic flexible polymeric substrate by low energy Cs + ion sputtering
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F. Chiarella, Luigi Mariucci, Matteo Rapisarda, Alberto Aloisio, P. Branchini, Luca Tortora, Andrea Fabbri, Mario Barra, Francesco Di Capua, Marco Urbini, Antonio Cassinese, Tortora, Luca, Urbini, Marco, Fabbri, Andrea, Branchini, Paolo, Mariucci, Luigi, Rapisarda, Matteo, Barra, Mario, Chiarella, Fabio, Cassinese, Antonio, Di Capua, Francesco, and Aloisio, Alberto
- Subjects
Fabrication ,Materials science ,Supramolecular chemistry ,General Physics and Astronomy ,02 engineering and technology ,Organic electronic ,OTFT ,010402 general chemistry ,01 natural sciences ,Ion ,Molecule ,Organic electronics ,PCA ,business.industry ,Surfaces and Interfaces ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,Surfaces, Coatings and Films ,Semiconductor ,Chemical engineering ,Depth profiling ,Electrode ,Surface modification ,0210 nano-technology ,business ,ToF-SIMS - Abstract
Here, electron-transporting semiconducting organic channels made of N,N′-1H, 1H-perfluorobutyl dicyanoperylenecarboxydiimmide (PDIF-CN2) molecules were thermally evaporated on flexible polyethylene-naphtalate (PEN) plastic substrates equipped with gold (Au) electrodes. This multilayer structure represents the basic component for the fabrication of staggered top-gate n-type organic thin-film transistors (OTFTs) to be completed with the addition of a polymeric dielectric layer and an aluminum gate electrode. PEN substrate was treated with hexamethyldisilazane (HMDS) in order to make it more hydrophobic. Indeed, the hydrophobized surface of the plastic substrate was shown to induce a more ordered supramolecular structure of the semiconductor layer during the evaporation process. The hybrid organic/inorganic formally trilayer non-passivated OTFT structure was successfully profiled in a single run through ToF-SIMS depth profiling experiments with low energy cesium ions. High mass molecular fragment ions were obtained and used as indicators of interfaces, leading to an increase of information on molecular specificity. The HMDS surface modification was clearly detected and spatially located. Finally, a chemometric approach was also adopted to evaluate depth profiling data. In particular, principal component analysis (PCA) and K-means algorithm were tested as innovative method for the identification of molecular fragments useful for the OTFT multi-layer structure characterization and the determination of the number of OTFT layers, respectively.
- Published
- 2018
21. Staggered top-gate PDIF-CN2N-type thin film transistors on flexible plastic substrates
- Author
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F. Chiarella, Sabrina Calvi, Luigi Mariucci, Alberto Aloisio, Antonio Cassinese, F. Di Capua, Matteo Rapisarda, Mario Barra, Rapisarda, M., Calvi, S., Barra, M., Chiarella, F., Di Capua, F., Cassinese, A., Aloisio, A., and Mariucci, L.
- Subjects
Materials science ,Perylene diimide molecule ,Organic n-type semiconductor ,02 engineering and technology ,Dielectric ,Condensed Matter Physic ,Flexible transistor ,OTFT ,010402 general chemistry ,01 natural sciences ,Bias stress ,Biomaterials ,Materials Chemistry ,Electrical and Electronic Engineering ,Materials Chemistry2506 Metals and Alloy ,business.industry ,Electronic, Optical and Magnetic Material ,Chemistry (all) ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Biomaterial ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Hysteresis ,Thin-film transistor ,Optoelectronics ,0210 nano-technology ,business - Abstract
In this work, staggered top-gate n-type organic thin film transistors (OTFTs) with evaporated PDIF-CN2 semiconducting layers, spin-coated Cytop™ dielectric barriers and channel lengths ranging from 100 to 2 μm were fabricated on polyethylene-naphtalate (PEN) substrates. Hexamethyldisilazane (HMDS) treatment of the PEN surface was successfully tested as an effective strategy to achieve flexible devices with improved electrical response. Following this approach, maximum field-effect mobility (μFE) values exceeding 0.4 cm2/V⋅s were observed in air. Moreover, the self-encapsulating features of the investigated top-gate configuration, employing the highly hydrophobic Cytop™ dielectric films, allowed getting considerable performances in terms of un-sensitivity to hysteresis and bias stress phenomena.
- Published
- 2018
22. Modeling of Capacitance Characteristics of Printed p-Type Organic Thin-Film Transistors
- Author
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Mohammed Benwadih, Isabelle Chartier, Romain Coppard, Jacqueline Bablet, Sabrina Calvi, Vincent Fischer, Matteo Rapisarda, Luigi Mariucci, Stephanie Jacob, Guglielmo Fortunato, and Antonio Valletta
- Subjects
organic thin-film transistors (OTFTs) ,Materials science ,parasitic capacitance ,Differential capacitance ,business.industry ,Transistor ,Hardware_PERFORMANCEANDRELIABILITY ,Capacitance ,Electronic, Optical and Magnetic Materials ,law.invention ,Semiconductor ,Nonquasi-static small-signal model ,Parasitic capacitance ,law ,Thin-film transistor ,Transmission line ,Hardware_INTEGRATEDCIRCUITS ,Electronic engineering ,Optoelectronics ,Electrical and Electronic Engineering ,business ,printed organic electronics ,DC bias - Abstract
We studied the capacitance characteristics of printed p-type organic thin-film transistors (OTFTs) under vari- ous frequencies and dc bias conditions. The experimental results show that the device capacitance is largely influenced by parasitic capacitances, related to the large gate-active layer overlap areas required by the printing processes. We developed a nonquasi- static small-signal capacitance model that adopts a transmission line approach and considers the specific layout of the OTFTs, taking into account for the parasitic capacitances and, hence, is particularly well suited for printed devices. In addition, the model included parasitic impedance at the metal-organic semiconductor contacts, related to the nonohmic behavior of source-drain contacts. The model has been shown to nicely reproduce the experimental capacitance characteristics in all their features. It should be pointed out that the proposed model allows the reproducing of any device layout and could be implemented in device simulator to analyze small-signal dynamic characteristics.
- Published
- 2014
23. Logic gates and memory elements design and simulation using PMOS organic transistor
- Author
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P. Branchini, F. Di Capua, Alberto Aloisio, D. Riondino, Matteo Rapisarda, A. Valletta, Luigi Mariucci, A. Fabbh, Branchini, P., Fabbh, A., Riondino, D., Mariucci, L., Rapisarda, M., Valletta, A., Aloisio, A., and Di Capua, F.
- Subjects
Materials science ,business.industry ,Transistor ,Nanotechnology ,Dielectric ,Organic electronic ,PMOS logic ,law.invention ,Logic port ,Pentacene ,chemistry.chemical_compound ,Semiconductor ,chemistry ,law ,Control and Systems Engineering ,Logic gate ,Optoelectronics ,Fluoropolymer ,Electrical and Electronic Engineering ,business ,Memory element ,Electronic circuit - Abstract
Multi-flngered OTFTs, with staggered top-gate configuration have been fabricated on flexible polyethylene-naphtalate (PEN) substrates (100 μm thick). Inkjet printing technique has been used to setup the silver contacts, while the organic layers and the dielectric fluoropolymer have been deposited by spin-coating. The p-type polymeric semiconductor is a solution processed 6,13-bis(triisopropyl-silyletynyl) pentacene. The semiconductor layer thickness is about 30 nm, while the dielectric fluoropolymer is 400 nm thick. These transistors have been characterized and a DC, and a transient accurate models have been developed and imported in CADENCE. Finally, SPECTRE has been used to simulate model circuits based on such a device. In this work we describe the design of high frequency logic gates and preliminary flip-flops design, exploiting PMOS organic transistor and its expected performances.
- Published
- 2017
24. A large signal non quasi static compact model for printed organic thin film transistors
- Author
-
Sabrina Calvi, Luigi Mariucci, Guglielmo Fortunato, Matteo Rapisarda, and Antonio Valletta
- Subjects
010302 applied physics ,Materials science ,Discretization ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Signal ,Computational physics ,Organic semiconductor ,Continuity equation ,Thin-film transistor ,Logic gate ,0103 physical sciences ,Electronic engineering ,Boundary value problem ,0210 nano-technology ,Quasistatic process - Abstract
In this work we present a large signal non quasi static (LSNQS) compact model based on the discretization of the current continuity equation using a spline collocation approach. The underlying charge/current model is based on the VRH theory. The LSNQS model takes in consideration the presence of parasitic regions and is particularly suited for simulations of printed organic thin film transistors. Some results obtained by a Verilog-A implementation are presented.
- Published
- 2016
25. Correlated Mobility Fluctuations and Contact Effects in p-Type Organic Thin-Film Transistors
- Author
-
Graziella Scandurra, Matteo Rapisarda, Gino Giusi, Luigi Mariucci, Guglielmo Fortunato, Carmine Ciofi, O. Giordano, and Sabrina Calvi
- Subjects
Materials science ,Low-frequency noise (LFN) ,Context (language use) ,02 engineering and technology ,01 natural sciences ,organic thin-film transistor (OTFT) ,LFN measurements (LFNMs) ,0103 physical sciences ,Electrical and Electronic Engineering ,OTFT contacts ,010302 applied physics ,Condensed matter physics ,Noise measurement ,Scattering ,business.industry ,Electronic, Optical and Magnetic Materials ,Order (ring theory) ,021001 nanoscience & nanotechnology ,Active layer ,Thin-film transistor ,Optoelectronics ,Charge carrier ,0210 nano-technology ,business ,Noise (radio) - Abstract
Low-frequency noise (LFN) has been used in order to gain insight into the physical properties of the materials involved in organic thin-film transistors (OTFTs) fabrication, often with contradictory results. Besides the physical origin of noise, contact effects on noise have been a source of concern and discussion. In this paper, we report on accurate LFN measurements in p-type staggered top-gate OTFTs over four decades of channel current, from the subthreshold to the strong accumulation region. The measured spectra follow a clear 1/ $f$ behavior attributed to the trapping/detrapping of channel charge carriers into interface and oxide defects, while the influence of noise sources at contacts is found to be negligible. However, contacts affect the measured noise by a nonnegligible differential resistance. Noise data are interpreted in the context of a multitrap correlated mobility fluctuations (CMFs) model, showing that noise is dominated by acceptor-like traps. Despite the low mobility ( $\mu _{{\mathrm{eff}}}\sim $ 2 cm2/V/s), the large scattering parameter ( $\alpha \sim 10 ^{7}$ Vs/C) produces an increase of the noise at the higher currents due to CMFs. The product $\alpha \mu _{{\mathrm{eff}}} \approx 2\cdot 10^{7}$ cm2/C, which measures the strength of CMFs, is similar to what was reported for a-Si:H and much higher with respect to crystalline silicon MOSFETs revealing a strong correlation between CMFs and the state of disorder of the active layer.
- Published
- 2016
26. Growth and manipulation of organic semiconductors microcrystals by wet lithography
- Author
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Massimiliano Cavallini, Stefano Toffanin, Denis Gentili, Silvia Milita, Manuela Melucci, Fabiola Liscio, Luigi Mariucci, Luca Beverina, Gentili, D, Liscio, F, Mariucci, L, Beverina, L, Melucci, M, Toffanin, S, Milita, S, and Cavallini, M
- Subjects
Fabrication ,Materials science ,Capillary action ,Nanotechnology ,02 engineering and technology ,Substrate (electronics) ,010402 general chemistry ,01 natural sciences ,Biomaterials ,Electrochemistry ,Thin film ,organic semiconductors ,Lithography ,patterning ,organic semiconductor ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Organic semiconductor ,Nanocrystal ,soft-lithography ,crystals manipulation ,Wetting ,0210 nano-technology ,fabrication processe - Abstract
As fabrication and positioning of micro- and nanocrystals grow in importance in a wide range technological applications, there is an increasing requirement for the development of a shared technological platform that is able to process materials from solutions on large areas. Here, the application of lithographically controlled wetting (LCW) for the manipulation and positioning of single crystals directly on devices is reported. In the LCW, a stamp, consisting of a metallic grid, is positioned in contact with a liquid thin film spread on a substrate; under these conditions, the capillary forces pin the solution to the stamp protrusions, thus splitting the continuous film in separated droplets or channels. As the solvent evaporates and the solution reaches the saturation, the solute precipitates onto the substrate within the menisci, giving rise to a structured thin film, in correspondence of the protrusion of the stamp. The possibility to achieve a patterning of crystals of conjugated molecules with a defined shape and with controlled size directly on device is demonstrated and pattern of crystals are investigated using polarized optical microscopy, atomic force microscopy, X-ray diffraction; they are also electrically characterized. The application of lithographically controlled wetting on the manipulation and positioning of single crystals directly on devices. It is demonstrated that it is possible to achieve patterning of crystals of conjugated molecules with a defined shape and with controlled size directly on a device.
- Published
- 2016
27. Contact Effects in Organic Thin-Film Transistors: Device Physics and Modeling
- Author
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Matteo Rapisarda, Antonio Valletta, Luigi Mariucci, and Guglielmo Fortunato
- Subjects
Physics ,Thin-film transistor ,business.industry ,Optoelectronics ,business ,Contact effects - Published
- 2016
28. Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors
- Author
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Luigi Mariucci, Sabrina Calvi, Matteo Rapisarda, Guglielmo Fortunato, Gino Giusi, Graziella Scandurra, and Carmine Ciofi
- Subjects
Materials science ,Gate dielectric ,02 engineering and technology ,low frequency noise ,01 natural sciences ,law.invention ,Organic TFT ,Computer Science::Hardware Architecture ,Computer Science::Emerging Technologies ,law ,0103 physical sciences ,Electrical and Electronic Engineering ,010302 applied physics ,Condensed matter physics ,business.industry ,Transistor ,Direct current ,Electrical engineering ,Schottky diode ,021001 nanoscience & nanotechnology ,Thermal conduction ,Electronic, Optical and Magnetic Materials ,Semiconductor ,Thin-film transistor ,low frequency noise measurements ,gate noise ,0210 nano-technology ,business ,Noise (radio) - Abstract
Investigation of gate dielectric conduction properties in organic p-type staggered thin-film transistors is reported by means of direct-current, capacitance–voltage, and noise measurements. Results suggest that transport in the CYTOP™ gate dielectric is dominated, at low currents, by Schottky conduction due to the emission at the aluminum gate interface through a barrier $\phi _{B} \approx 1$ eV, while is limited, at higher currents, by space-charge conduction in the trap-limited regime with an effective mobility $\mu \theta $ estimated in the order of $10^{-9}$ cm2/(Vs). Gate current noise follows a 1/ $f$ law and it is found to be proportional to $I_{G}^{2}$ , which is inconsistent with the commonly assumed mobility fluctuation. Traps responsible for gate noise are dielectric-bulk traps, not located at the semiconductor interface, since the gate noise is found to be uncorrelated with drain noise.
- Published
- 2016
29. Water stable organic thin film transistors (TFTs) made on flexible substrates
- Author
-
Luigi Mariucci, Sabrina Calvi, Matteo Rapisarda, Maurizio Greco, Antonio Valletta, Vincenzo Vinciguerra, and Guglielmo Fortunato
- Subjects
chemistry.chemical_compound ,Controlled environment chamber ,Materials science ,chemistry ,Moisture ,business.industry ,Thin-film transistor ,Gate dielectric ,Optoelectronics ,Fluoropolymer ,business - Abstract
We have investigated the stability of the electrical performances in staggered organic thin film transistors (OTFTs) manufactured by using a CYTOP fluoropolymer as a gate dielectric, after the devices underwent reliability cycles in a high moisture and temperature controlled environment chamber. The results of such testing cycles showed a very high stability against the environmental conditions that might be related to the device top-gate structure, working as an efficient encapsulation, and to the hydrophobic properties of the fluoropolymer used as gate dielectric.
- Published
- 2015
30. Unified drain-current model of complementary p- and n-type OTFTs
- Author
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Luigi Mariucci, Eugenio Cantatore, Fabrizio Torricelli, Luigi Colalongo, Matteo Rapisarda, Romain Coppard, Matteo Ghittorelli, Antonio Valletta, Zsolt Miklós Kovács-Vajna, Stephanie Jacob, Integrated Circuits, and Emerging Technologies
- Subjects
Materials Chemistry2506 Metals and Alloys ,Materials science ,Organic field-effect transistor (OFET) ,Circuit design ,Complementary technology ,Nanotechnology ,Modelling Circuit design ,Organic thin-film transistor (OTFT) ,Biomaterials ,Electronic, Optical and Magnetic Materials ,Electrical and Electronic Engineering ,Chemistry (all) ,Condensed Matter Physics ,Integrated circuit ,Modelling ,law.invention ,law ,Materials Chemistry ,Hardware_INTEGRATEDCIRCUITS ,Electronic ,Optical and Magnetic Materials ,Drain current ,business.industry ,Transistor ,General Chemistry ,Organic semiconductor ,Thin-film transistor ,Density of states ,Optoelectronics ,business ,Voltage - Abstract
A unified drain current model of complementary (p- and n-type) organic thin film transistors (OTFTs) is presented. The model is physically based and takes into account the detailed properties of the organic semiconductor through the density of states (DOS). The drain current depends on the geometrical and physical parameters of the transistor, on the applied gate, drain and source voltages, and on the surface potential at the source and drain contacts. An analytical expression of the surface potential is derived. The proposed model is validated with the numerical calculations and the measurements of both p- and n-type OTFTs fabricated in a printed complementary technology. The provided analyses show that the model is continuous, accurate, and includes the main physical effects taking place in complementary organic transistors. Thanks to its analytical and symmetric formulation, it is suitable for the design of organic integrated circuits. Moreover, the unified physical picture provided by the model enables the extraction of the OTFTs physical parameters, thus it is a very powerful tool for the technology characterization.
- Published
- 2015
31. Graphene-based field effect transistors for radiation-induced field sensing
- Author
-
Guglielmo Fortunato, Luigi Mariucci, Roberto Cimino, Rosanna Larciprete, Antonio Valletta, Alessandra Di Gaspare, and Andrea Notargiacomo
- Subjects
Nuclear and High Energy Physics ,Field (physics) ,Physics::Instrumentation and Detectors ,Field effect ,Nanotechnology ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,law.invention ,law ,Instrumentation ,Solid State Detectors ,Physics ,Graphene ,business.industry ,Transistor ,Semiconductor device ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Surface coating ,Optoelectronics ,Field-effect transistor ,Radiation sensors ,0210 nano-technology ,business ,Graphene nanoribbons - Abstract
We propose the implementation of graphene-based field effect transistor (FET) as radiation sensor. In the proposed detector, graphene obtained via chemical vapor deposition is integrated into a Si-based field effect device as the gate readout electrode, able to sense any change in the field distribution induced by ionization in the underneath absorber, because of the strong variation in the graphene conductivity close to the charge neutrality point. Different 2-dimensional layered materials can be envisaged in this kind of device.
- Published
- 2016
32. Fully-organic flexible tactile sensor for advanced robotic applications
- Author
-
Matteo Rapisarda, A. Pecora, A. Ferrone, Luigi Mariucci, Sabrina Calvi, Guglielmo Fortunato, Antonio Minotti, Francesco Maita, and Luca Maiolo
- Subjects
Materials science ,Piezoelectric sensor ,business.industry ,Electronic skin ,Electrical engineering ,law.invention ,Capacitor ,Thin-film transistor ,law ,Composite material ,Polyethylene naphthalate ,business ,Tactile sensor ,Polyimide ,Humanoid robot - Abstract
In this work we investigate the electromechanical behavior of a flexible piezoelectric sensor, based on Polyvinylidene-fluoride-trifluoroethylene (PVDF-TrFE) capacitor fabricated on ultra-thin polyimide film (5 µm thick). The piezocapacitor has been integrated with a high mobility p-channel organic thin film transistor, made on polyethylene naphthalate (PEN, 125 µm thick), by adopting a multi-foil approach. An extensive study of the effects of the electrical and mechanical stress on the device components has been reported in order to evaluate the sensor's reliability in a real environment. Then the sensor was tested, at different working frequencies and applied forces with the intent of mimicking the human sense of touch. We believe that this device can represent a key element for a high performing electronic skin system to be deployed on humanoid robot.
- Published
- 2014
33. Crystal Manipulation: Growth and Manipulation of Organic Semiconductors Microcrystals by Wet Lithography (Adv. Funct. Mater. 14/2016)
- Author
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Stefano Toffanin, Luigi Mariucci, Denis Gentili, Silvia Milita, Massimiliano Cavallini, Luca Beverina, Fabiola Liscio, Manuela Melucci, Gentili, D, Liscio, F, Mariucci, L, Beverina, L, Melucci, M, Toffanin, S, Milita, S, and Cavallini, M
- Subjects
crystal, molecular electronics, organics ,Materials science ,business.industry ,Molecular electronics ,Nanotechnology ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Biomaterials ,Crystal ,Organic semiconductor ,Electrochemistry ,Optoelectronics ,business ,Lithography - Abstract
Many functional properties of organic semiconductors, such as charge transport, are regulated by structural order. The control of crystallinity, orientation, and positioning of crystals—the highest form of order—inside devices presents an extraordinary opportunity to fully exploit their potentialities. On page 2387, M. Cavallini and co-workers demonstrate direct patterning of crystals of conjugated molecules onto devices, with defined shape and controlled size
- Published
- 2016
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