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Presents a study which examined highly carbon-doped gallium arsenide epilayers grown by low-pressure metalorganic vapor phase epitaxy using high-resolution x-ray diffraction. Information on carbon-doping; Methodology; Results.

Presents a study that investigated gallium compound interfaces grown by low-pressure metalorganic vapor phase epitaxy at various temperatures and in different structures. Use of photoluminescence method; Results of the examination on gallium compound using x-ray diffraction measurements and simulations with dynamical theory.

Quasi-free-standing epitaxialgraphenegrown on wide band gap semiconductorSiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxialgraphene is prepared and its transistors with gate lengths of 100 nm and 200 nm are fabricated and characterized. The 100 nm gate length graphenetransistor shows improved DC and RF performances including a maximum current density Ids of 4.2 A/mm, and a peak transconductance gm of 2880 mS/mm. Intrinsic current-gain cutoff frequency fT of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standing bilayer epitaxialgraphenetransistor show the great application potential of this material system. [ABSTRACT FROM AUTHOR]

By using highly conductive p-type La0.7Sr0.3MnO3 (LSMO) and n-type La0.07Sr0.93SnO3 (LSSO) as electrodes, all-oxide Pb(Zr0.52Ti0.48)O3 (PZT) capacitors, LSMO/PZT/LSMO, LSSO/PZT/LSSO, LSSO/PZT/LSMO, and LSMO/PZT/LSSO, have been grown epitaxially on (001)SrTiO3 substrates, and their structure, switching, fatigue, and optical properties were investigated. Strikingly, contrary to the LSMO/PZT/LSMO capacitors, those having the n-type electrode show poor fatigue resistance especially at lower driving frequencies, which was further confirmed by using another n-type oxide electrode, SrTi0.9Sb0.1O3. The results suggest that with a depletion layer at the PZT/LSSO interface, charge accumulation and injection during switching may be responsible for the fatigue. [ABSTRACT FROM AUTHOR]

Conductive and transparent La0.07Sr0.93SnO3 (LSSO) films were employed as electrodes for the fabrication of epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric capacitors. Due to a negligible lattice mismatch between LSSO and PZT, the LSSO/PZT/LSSO heterostructures grown on SrTiO3(001) substrates show excellent single-crystalline quality as revealed by high-resolution x-ray diffraction and are transparent with transmittance comparable to that of pure SrTiO3(001) substrates at the wavelength of 400–2500 nm. These capacitors show square polarization–electric field hysteresis loops but smaller polarization, larger coercive field, and especially poor fatigue resistance, in sharp contrast with those observed for the conventional epitaxial all-oxide PZT capacitors. [ABSTRACT FROM AUTHOR]

Pd films deposited at room temperature have been found to grow epitaxially on GaN grown by metalorganic vapor phase epitaxy (MOVPE). The Pd films were deposited on GaN substrates cleaned by chemicals only, and in a conventional e-beam evaporation system with a vacuum of ∼1×10-7 Torr. MeV 4He backscattering spectrometry and the Read x-ray camera were used to evaluate the Pd films. The effects of various chemical etchants—such as aqua regia, HCl:H2O, and HF:H2O—on the epitaxial quality of the Pd films have also been investigated. Ni and Pt films deposited on GaN in a similar manner were also found to be epitaxial. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]