79 results on '"Hudgins, Jerry L."'
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2. A Circuit for Testing Common-mode Transient Immunity (dv/dt) of Isolated Current Sense Amplifiers and Drivers
3. Converting Waste Vehicle Aerodynamic Energy into Electricity
4. A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices.
5. Bearing Fault Diagnosis of Direct-Drive Wind Turbines Using Multiscale Filtering Spectrum.
6. Monitoring IGBT's health condition via junction temperature variations
7. A unified silicon/silicon carbide IGBT model
8. Wind/solar hybrid generation-based roadway microgrids
9. A high power, current sensorless, bi-directional, 16-phase interleaved, DC-DC converter for hybrid vehicle application
10. Maximum power extraction from a small wind turbine using 4-phase interleaved boost converter
11. Preliminary Design, Simulation and Modeling of a Series Hybrid Commuter Vehicle with a Minimal IC Engine
12. A Real-Time Thermal Model for Monitoring of Power Semiconductor Devices.
13. Modeling of Wide-Bandgap Power Semiconductor Devices—Part II.
14. Modeling of Wide Bandgap Power Semiconductor Devices—Part I.
15. CHAPTER 4: IGBT Under an Inductive Load-Switching Condition in Simulink®: 4.2: DIODE SUBSYSTEM.
16. CHAPTER 5: Parameter Extraction: 5.2: PARAMETER ESTIMATION FOR IGBTS.
17. CHAPTER 5: Parameter Extraction: 5.1: PARAMETER ESTIMATION FOR POWER DIODES.
18. CHAPTER 4: IGBT Under an Inductive Load-Switching Condition in Simulink®: 4.3: NPT IGBT SUBSYSTEM.
19. CHAPTER 4: IGBT Under an Inductive Load-Switching Condition in Simulink®: 4.1: ELECTRICAL CIRCUIT IN SIMULINK®.
20. CHAPTER 3: Modeling of a Power Diode and IGBT: 3.2: MODELING AN NPT IGBT.
21. CHAPTER 3: Modeling of a Power Diode and IGBT: 3.1: MODELING A POWER DIODE.
22. CHAPTER 2: Physics of Power Semiconductor Devices: 2.1: ON-STATE OPERATION OF BIPOLAR DEVICES.
23. APPENDIX A: Appendix.
24. CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.5: TEMPERATURE-DEPENDENT PARAMETERS OF NPT IGBT AND THEIR CONNECTION TO THE ELECTRICAL MODEL.
25. CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.4: TEMPERATURE DEPENDENT PARAMETERS OF DIODES AND THEIR CONNECTION TO AN ELECTRICAL MODEL.
26. CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.2: REALIZATION OF EQUIVALENT RC NETWORK.
27. CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.3: REALIZATION OF ONE-DIMENSIONAL FOURIER-SERIES THERMAL MODEL.
28. CHAPTER 2: One-Dimensional Thermal Model: 2.4: ONE-DIMENSIONAL FOURIER SERIES THERMAL MODEL.
29. CHAPTER 2: One-Dimensional Thermal Model: 2.3: EQUIVALENT RC NETWORK THERMAL MODEL.
30. CHAPTER 2: One-Dimensional Thermal Model: 2.2: HEAT CONDUCTION PROBLEM IN DBC STRUCTURE.
31. CHAPTER 1: Temperature Dependencies of Material and Device Parameters: 1.2: TEMPERATURE DEPENDENCIES.
32. Parameter Extraction Procedure for Vertical SiC Power JFET.
33. Model for Power SiC Vertical JFET With Unified Description of Linear and Saturation Operating Regimes.
34. A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility.
35. Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects.
36. Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs.
37. Transient Electrothermal Simulation of Power Semiconductor Devices.
38. Modeling of IGBT Resistive and Inductive Turn-On Behavior.
39. Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation.
40. Simulation and Optimization of Diode and Insulated Gate Bipolar Transistor Interaction in a Chopper Cell Using MATLAB and Simulink.
41. Destruction-Free Parameter Extraction for a Physics-Based Circuit Simulator IGCT Model.
42. Two-Step Parameter Extraction Procedure With Formal Optimization for Physics-Based Circuit Simulator IGBT and p-i-n Diode Models.
43. Circuit Simulator Models for the Diode and IGBT With Full Temperature Dependent Features.
44. Characterization and Modeling of High-Voltage Field-Stop IGBTs.
45. An Assessment of Wide Bandgap Semiconductors for Power Devices.
46. CHAPTER 1: Introduction to Power Semiconductor Device Modeling.
47. CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.1: INTRODUCTION.
48. Gating Effects on Thyristor Anode Current di/dt.
49. High di/dt Pulse Switching of Thyristors.
50. CHAPTER 5: Parameter Extraction: 5.3: INITIAL CIRCUIT PARAMETER ESTIMATION.
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