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2. High‐Throughput Experimentation Unveils Composition – Structure – Conductivity Relationships in the Extended LiPON System.

Author

Berthou, William, Legallais, Maxime, Sorieul, Stéphanie, Yildirim, Gunay, Bousquet, Bruno, Motto‐Ros, Vincent, and Le Cras, Frédéric

Subjects
*COMBINATORIAL chemistry, *THIN films analysis, *HIGH throughput screening (Drug development), *CARRIER density, *ANALYTICAL chemistry
Abstract

A high‐throughput experimental approach is developed to assess the correlations between chemical composition, structure and conduction properties of inorganic solid ionic conductors. This approach covers the preparation of a large number of samples by combinatorial synthesis, followed by fast characterization of the material library. The approach is primarily based on combinatorial synthesis by magnetron co‐sputtering and the characterization of thin film samples where lithium phosphorus oxynitride (LiPON) is chosen as a case study. A library of 76 LiPON materials is prepared in one experiment from the reactive co‐sputtering of LiPO3 and Li3PO4 in a N2 atmosphere. A specific sample design allows conducting thickness and impedance measurements, Raman spectroscopy, then fast and spatially‐resolved chemical analysis by Laser‐Induced Breakdown Spectroscopy (LIBS) on each material. Particular developments are devoted to this technique to achieve quantitative analysis of lithium in thin films. The materials cover a wide range of compositions with 0.95

  • Published
    2024
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    5. Role played by the nanowire/nanowire junctions in the electrical properties of semiconductor percolating silicon nanowire networks.

    Author

    Legallais, Maxime, Thi Thu Thuy Nguyen, Cazimajou, Thibauld, Mouis, Mireille, Arjmand, Tabassom, Salem, Bassem, and Ternon, Céline

    Subjects
    *SILICON nanowires, *NANOWIRES, *SEMICONDUCTORS, *POLYCRYSTALLINE silicon, *CONSTRUCTION materials, *FIELD-effect transistors
    Abstract

    In this paper, we highlight the key role played by Si nanowire/nanowire junctions in the electrical performance of field-effect transistors (FETs) based on percolating Si nanowire (SiNW) networks, also called nanonets. Using our original technological process to fabricate simultaneously numerous silicon nanonet-based transistors with a variable geometry, we thoroughly investigated in this paper their electrical properties for various channel lengths from 5 to 100 µm. In particular, we evidenced a clear transition in the FET performance, when NW/NW junctions are involved in the conduction path. On the one hand, for channel length shorter than that of nanowires (NWs), the devices are called multipleparallel-channel FETs as NWs directly bridge the channel, and they exhibit poor electrical performance in terms of OFF current, ON-to-OFF ratio, and subthreshold slope. On the other hand, for channel length longer than that of nanowires (NWs), the devices are called nanonet- FETs (NN-FETs) as the current flows through percolating paths made of NWs and NW/NW junctions and the performance are considerably enhanced. By combining our structural knowledge of the material with experimental observations of electrical properties and modeling results, by relying on the percolation theory, the model for electrical transport in polycrystalline silicon and the principle of potential barrier lowering by the field effect, we propose the junction driven percolation mechanism. It explains the role played by the nanowire/nanowire junctions in the electrical properties of semiconductor percolating nanowire networks and how they drastically enhanced the electrical properties of nanowire-based field-effect transistors despite the disorder introduced by the increasing number of nanowires. As a consequence, by controlling properly the junction interfaces and device geometry for a given NW density, thanks to NW/NW junctions, the NN-based devices are a valuable and promising alternative to improve the electrical performances of NW-based devices for future developments. [ABSTRACT FROM AUTHOR]

    Published
    2020
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    9. Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors

    Author

    Legallais, Maxime, primary, Lefevre, Gauthier, additional, Martin, Simon, additional, Labau, Sébastien, additional, Bassani, Franck, additional, Pélissier, Bernard, additional, Baron, Thierry, additional, Vauche, Laura, additional, Le Royer, Cyrille, additional, Charles, Matthew, additional, Vandendaele, William, additional, Plissonnier, Marc, additional, Gwoziecki, Romain, additional, and Salem, Bassem, additional

    Published
    2021
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    10. High‐Throughput Experimentation and Computational Freeway Lanes for Accelerated Battery Electrolyte and Interface Development Research

    Author

    Benayad, Anass, primary, Diddens, Diddo, additional, Heuer, Andreas, additional, Krishnamoorthy, Anand Narayanan, additional, Maiti, Moumita, additional, Cras, Frédéric Le, additional, Legallais, Maxime, additional, Rahmanian, Fuzhan, additional, Shin, Yuyoung, additional, Stein, Helge, additional, Winter, Martin, additional, Wölke, Christian, additional, Yan, Peng, additional, and Cekic‐Laskovic, Isidora, additional

    Published
    2021
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    11. High‐Throughput Experimentation and Computational Freeway Lanes for Accelerated Battery Electrolyte and Interface Development Research.

    Author

    Benayad, Anass, Diddens, Diddo, Heuer, Andreas, Krishnamoorthy, Anand Narayanan, Maiti, Moumita, Cras, Frédéric Le, Legallais, Maxime, Rahmanian, Fuzhan, Shin, Yuyoung, Stein, Helge, Winter, Martin, Wölke, Christian, Yan, Peng, and Cekic‐Laskovic, Isidora

    Subjects
    DEEP learning, ELECTROLYTES, RESEARCH & development, ARTIFICIAL intelligence, MACHINE learning, PREDICTION models, EXPRESS highways
    Abstract

    The timely arrival of novel materials plays a key role in bringing advances to society, as the pace at which major technological breakthroughs take place is usually dictated by the discovery rate at which novel materials are identified within chemical space. High‐throughput experimentation and computation strategy, now widely considered as a watershed in accelerating the discovery and optimization of novel materials in virtually every field, enables simultaneous screening, synthesis and characterization of large arrays of different material classes toward identification of the lead candidates for given system and targeted application. However, the ability to acquire data, through the continued advancement of automation platforms and workflows especially in the field of battery research and development, often outpaces the ability to optimally leverage obtained data for improved decision‐making. Closing this gap inevitably calls for adapted algorithms, development of reliable predictive models and enhanced integration with machine learning, deep learning, and artificial intelligence. This Review aims to highlight state‐of‐the‐art achievements along with an assessment of current and future challenges as well as resulting perspectives toward accelerated development of advanced battery electrolytes and their interfaces. [ABSTRACT FROM AUTHOR]

    Published
    2022
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    13. Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors.

    Author

    Legallais, Maxime, Lefevre, Gauthier, Martin, Simon, Labau, Sébastien, Bassani, Franck, Pélissier, Bernard, Baron, Thierry, Vauche, Laura, Le Royer, Cyrille, Charles, Matthew, Vandendaele, William, Plissonnier, Marc, Gwoziecki, Romain, and Salem, Bassem

    Subjects
    GALLIUM nitride, MODULATION-doped field-effect transistors, ATOMIC layer deposition, CAPACITANCE-voltage characteristics, ION energy, CAPACITORS
    Abstract

    In this article, the role of the substrate biasing during the passivation of GaN with AlN deposited by plasma enhanced atomic layer deposition (PEALD) is investigated. In addition to a commonly used remote inductively‐coupled plasma source, the PEALD reactor is equipped with another power supply allowing the substrate to be biased and to adjust the ion energy impinging on the substrate surface. The presence is reported of a narrow bias window where the GaN passivation is significantly improved compared to a standard AlN film deposited without bias. It is found that the AlN film quality is enhanced and the crystallographic structure changes from a well‐ordered epitaxial relationship with the GaN substrate to textured films when applying a bias. Finally, the capacitance–voltage characteristics (C–V) of Al2O3/n‐GaN and Al2O3/AlN/n‐GaN metal‐oxide‐semiconductor (MOS) capacitors are also studied. It is shown that the addition of an AlN interlayer deposited with the appropriate bias is essential to positively shift the flatband voltage of the C–V characteristics while preserving high AlN/n‐GaN interface quality. Therefore, the GaN passivation with AlN deposited using substrate biasing provides a promising pathway towards the manufacturing of normally‐off MOS‐channel high electron mobility transistors. [ABSTRACT FROM AUTHOR]

    Published
    2022
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    15. Wafer-scale HfO2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment

    Author

    Jayakumar, Ganesh, Legallais, Maxime, Hellstrom, Per-Erik, Mouis, Mireille, Pignot-Paintrand, Isabelle, Stambouli-Sene, Valerie, TERNON, Céline, Östling, Mikael, Royal Institute of Technology [Stockholm] (KTH ), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

    Subjects
    pattern transfer lithography, HfO2passivation, silicon nanowire, [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, silicon nanowire hybridization, biosensor, HfO 2 passivation, DNA sensing
    Abstract

    International audience; Silicon nanowire (SiNW) charge based biosensors are attractive for DNA sensing applications due to their compactness and large surface-to-volume ratio. Small feature size, low production cost, repeatability, high sensitivity and selectivity are some of the key requirements for biosensors. The most common e-beam manufacturing method employed to manufacture sub-nm SiNWs is both cost and time intensive. Therefore, we propose a highly reproducible CMOS industry grade low-cost process to fabricate SiNW-based field effect transistors on 4''-wafers. The 60 nm wide SiNWs reported in this paper are fabricated using the sidewall transfer lithography process which is a self-aligned-double-patterning I-line lithography process that also facilitates encapsulation of the SiNW surface with a thin HfO2 layer on which DNA probes are grafted to finalize the biosensors. Upon DNA hybridization, SiNW devices exhibit threshold voltage shift larger than the noise introduced by the exposition to saline solutions used for the bioprocesses. More specifically, based on a statistical analysis, we demonstrate that 85% of the tested devices exhibit a positive threshold voltage shift after DNA hybridization. These promising results make way for the monolithic integration of SiNW biosensors and CMOS circuitry to realize a point of care device which can offer reliable real time electrical readout.

    Published
    2019

    17. Wafer-scale HfO 2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment

    Author

    Jayakumar, Ganesh, Legallais, Maxime, Hellström, Per-Erik, Mouis, Mireille, Pignot-Paintrand, Isabelle, Stambouli, Valérie, Ternon, Céline, Östling, Mikael, Jayakumar, Ganesh, Legallais, Maxime, Hellström, Per-Erik, Mouis, Mireille, Pignot-Paintrand, Isabelle, Stambouli, Valérie, Ternon, Céline, and Östling, Mikael

    Abstract

    Silicon nanowire (SiNW) charge based biosensors are attractive for DNA sensing applications due to their compactness and large surface-to-volume ratio. Small feature size, low production cost, repeatability, high sensitivity and selectivity are some of the key requirements for biosensors. The most common e-beam manufacturing method employed to manufacture sub-nm SiNWs is both cost and time intensive. Therefore, we propose a highly reproducible CMOS industry grade low-cost process to fabricate SiNW-based field effect transistors on 4-wafers. The 60 nm wide SiNWs reported in this paper are fabricated using the sidewall transfer lithography process which is a self-aligned-double-patterning I-line lithography process that also facilitates encapsulation of the SiNW surface with a thin HfO2 layer on which DNA probes are grafted to finalize the biosensors. Upon DNA hybridization, SiNW devices exhibit threshold voltage shift larger than the noise introduced by the exposition to saline solutions used for the bioprocesses. More specifically, based on a statistical analysis, we demonstrate that 85% of the tested devices exhibit a positive threshold voltage shift after DNA hybridization. These promising results make way for the monolithic integration of SiNW biosensors and CMOS circuitry to realize a point of care device which can offer reliable real time electrical readout., QC 20200427

    Published
    2019
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    18. New 1D and 2D semi-conducting nanostructures for FET detection of DNA

    Author

    Stambouli, Valérie, Nguyen, Thi Thu Thuy, Legallais, Maxime, Morisot, Fanny, Bange, Romain, Vallejo Perez, Monica, Bano, Edwige, Ternon, Céline, Mouis, Mireille, Salem, Bassem, Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    Subjects
    [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
    Abstract

    International audience

    Published
    2018

    19. Semiconducting nanonets: Design and integration into functional devices for multiple sensing applications

    Author

    Nguyen, Thuy, Fanny Morisot, Legallais, Maxime, Mouis, Mireille, Stambouli, Valérie, Salem, Bassem, Ternon, Céline, Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), SFP, European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Lmgp, Labo, and Nanonets2Sense - Nanonets2Sense - - H20202016-02-01 - 2019-01-31 - 688329 - VALID

    Subjects
    [CHIM.MATE] Chemical Sciences/Material chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry
    Abstract

    session PMQ2: Semiconductor Nanostructures; National audience

    Published
    2018

    20. Silicon nanonet: from nanostructured material to macroscale functional devices for sensing applications

    Author

    Nguyen, T. T. T., Legallais, Maxime, Fanny Morisot, T, Cazimajou, Salem, B., Mouis, M., Stambouli, V., Ternon, Céline, Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    Subjects
    [PHYS]Physics [physics], ComputingMethodologies_GENERAL, ComputingMilieux_MISCELLANEOUS
    Abstract

    session poster; International audience

    Published
    2018

    23. Nanonets semiconducteurs: de la conception à l'intégration en dispositifs électroniques pour la détection de biomolécules

    Author

    Nguyen, Tuy, Legallais, Maxime, Morisot, Fany, Mouis, Mireille, Salem, Bassem, Langlet, Michel, Riassetto, David, Stambouli, Valérie, TERNON, Céline, Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Lmgp, Labo

    Subjects
    [CHIM.MATE] Chemical Sciences/Material chemistry, resistor, détection des biomolécules, ADN, nanostructures, nanonet, acétone, [CHIM.MATE]Chemical Sciences/Material chemistry, propriétés électriques, transistor à effet de champ
    Abstract

    session: Dispositifs pour la Détection et l'Energie; National audience

    Published
    2017

    24. Investigating the long-term stability of Si and SiC nanowires under physiological conditions

    Author

    Bano, Edwige, Bange, Romain, Rapenne, Laëtitia, Legallais, Maxime, TERNON, Céline, Salem, Bassem, Stambouli, Valerie, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    Subjects
    NWFET, education, DNA, [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.MAT]Engineering Sciences [physics]/Materials, chemical stability, sensor, silicon carbide, ComputingMethodologies_GENERAL, silicon nanowire, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, human activities, ComputingMilieux_MISCELLANEOUS, health care economics and organizations
    Abstract

    session poster (p27); National audience

    Published
    2017

    25. Conception, étude et modélisation d’une nouvelle génération de transistors à nanofils de silicium pour applications biocapteurs

    Author

    Legallais, Maxime, STAR, ABES, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes, Mireille Mouis, and Céline Ternon

    Subjects
    Field effect transistor, Transistor à effet de champ, Détection électrique de l’ADN, Silicon nanonet, Propriétés électriques, Simulations Monte-Carlo, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, DNA electrical detection, Electrical properties, Percolation, Monte-Carlo simulations, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Nanonet de silicium
    Abstract

    A nanonet exhibits remarkable properties which arises from, not only, the intrinsic properties of each nanostructure but also from their assembly into network which makes them particularly attractive for various applications, notably in the field of optics, electronics or even biomedical. During this Ph.D. work, silicon nanowire-based nanonets were integrated for the first time into field effect transistors with a back gate configuration. The developed technological process is perfectly suitable with a large-scale and massive production of these devices at low cost without exceeding a thermal budget of 400°C. Major technological breakthroughs were achieved through the control of the sintering of nanowire junctions, the contact silicidation and the nanowire passivation with alumina. The as-fabricated nanonet transistors display outstanding, air stable and reproducible electrical characteristics which can compete with single nanowire-based devices. An in-depth study of percolation using experimental measurements and Monte-Carlo simulations highlighted that the conduction limitation by nanowire junctions allow to enhance drastically the electrical performances. After device integration into biosensors, it has been shown that transistors are electrically sensitive to DNA hybridization.Beneficiating from a fabrication process compatible with the microelectronic industry, a 3D integration of these nanonet-based transistors onto a readout circuit can therefore be envisioned which opens new avenues for portable biosensors, allowing direct and label-free detection of DNA. Furthermore, mechanical flexibility and optical transparency offer other opportunities in flexible electronic field., Un nanonet possède des propriétés remarquables qui proviennent non seulement des propriétés intrinsèques de chaque nanostructure mais aussi de leur assemblage en réseau ce qui les rend particulièrement attractifs pour de multiples applications, notamment dans les domaines de l’optique, l’électronique ou encore le biomédical. Dans ce travail de thèse, des nanonets constitués de nanofils de silicium ont été intégrés pour la première fois sous forme de transistors à effet de champ avec une grille en face arrière. La filière technologique développée est parfaitement compatible avec une production des dispositifs en masse, à bas coût et à grande échelle pour un budget thermique n’excédant pas 400°C. Des avancées technologiques majeures ont été réalisées grâce à la maîtrise du frittage des jonctions entre nanofils, de la siliciuration des contacts et de la passivation des nanofils avec de l’alumine. Les transistors à nanonets fabriqués présentent des caractéristiques électriques excellentes, stables sous air et reproductibles qui sont capables de concurrencer celles des transistors à nanofil unique. Une étude approfondie de la percolation par des mesures expérimentales et des simulations Monte-Carlo a mis en évidence que la limitation de la conduction par les jonctions entre nanofils permet d’améliorer considérablement les performances électriques. Après une intégration des dispositifs sous forme de biocapteurs, il a été montré que les transistors sont sensibles électriquement à l’hybridation de l’ADN. Bénéficiant d’un procédé de fabrication compatible avec l’industrie de la microélectronique, une intégration 3D de ces transistors à nanonet sur un circuit de lecture peut alors être envisagée ce qui ouvre la voie à des biocapteurs portables, capables de détecter l’ADN en temps réel et sans marquage. De plus, la flexibilité mécanique et la transparence optique du nanonet offrent d’autres opportunités dans le domaine de l’électronique flexible.

    Published
    2017

    26. New semiconductive nanostructures for electrical biosensing

    Author

    Legallais, Maxime, Demes, Thomas, Bange, Romain, TERNON, Céline, Bano, Edwige, Mouis, Mireille, Baron, Thierry, Salem, Bassem, Stambouli, Valerie, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    Subjects
    ComputingMethodologies_GENERAL, [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
    Abstract

    session poster; National audience

    Published
    2016

    29. De l’élaboration de nanonets de silicium par voie liquide à la fabrication de transistors à effet de champ

    Author

    Legallais, Maxime, Serre, P., Salem, Bassem, Baron, T., Stambouli, V., Mouis, M., Ternon, C., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), FMNT, G. Chadeyron, A. Potdevin, D. Boyer, F. Vocanson et M. Langlet, European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    Subjects
    [CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
    Abstract

    National audience

    Published
    2016

    34. Silicon Nanowires: Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions (Adv. Electron. Mater. 10/2015)

    Author

    Ternon, Céline, primary, Serre, Pauline, additional, Lebrun, Jean‐Marie, additional, Brouzet, Virginie, additional, Legallais, Maxime, additional, David, Sylvain, additional, Luciani, Thierry, additional, Pascal, Céline, additional, Baron, Thierry, additional, and Missiaen, Jean‐Michel, additional

    Published
    2015
    Full Text
    View/download PDF

    37. Wafer-scale HfO 2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment.

    Author

    Jayakumar G, Legallais M, Hellström PE, Mouis M, Pignot-Paintrand I, Stambouli V, Ternon C, and Östling M

    Subjects
    DNA Probes genetics, Nucleic Acid Hybridization, Point-of-Care Systems, Transistors, Electronic, Biosensing Techniques instrumentation, DNA Probes chemistry, Hafnium chemistry, Nanowires chemistry, Oxides chemistry, Silicon
    Published
    2019
    Full Text
    View/download PDF

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