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This report presents the first demonstration of passive RF comb filters made using epitaxial GaN/NbN/SiC high overtone bulk acoustic resonators (epi-HBARs). The two-port device is fabricated on electronic-grade GaN, electrically transduced, and acoustically coupled. The multi-mode epi-HBAR comb filter demonstrated here has 158 sharp filter passbands periodically distributed between 1 and 4 GHz (L–S-bands) with a free spectral range (FSR) of 17 MHz. The individual passbands of the epi-HBAR comb filter demonstrate transmission bandwidths (BWs) up to 800 kHz, ${f} {\times } {Q}$ values of up to $7\times 10^{{14}}$ Hz, and an average ${k}_{ {\text {eff}}}^{ {{2}}} {\times } {Q}$ figure of merit of 41.2 at room temperature. The GaN/NbN/SiC epi-HBAR comb filter is capable of operating at high RF power levels, with linear and distortion-free performance seen up to at least 1 W of continuous wave (CW) power and up to at least 10 W of pulsed power. The compact epi-HBAR comb filters can be co-fabricated with GaN-based electronics and could potentially replace larger, off-chip or discrete-component comb filters. They can be used for spectrum sensing and as signal processing elements for remote sensing and pulsed radar.

We present analytic and experimental evidence highlighting the importance of acoustic impedance matching for efficient power transfer in RF-MEMS composite resonators such as high-overtone bulk acoustic mode resonators (HBARs) and thin-film piezoelectric on substrate (TPoS) resonators. We show that materials used for the piezoelectric film and the bottom metal electrode in a composite resonator can be chosen or tailored for specific low-loss substrates, resulting in efficient acoustic power transmission across the interfaces of the acoustic source (piezoelectric transducer), intermediate layers including the bottom electrode, and into the acoustic cavity (substrate). We find that a composite resonator with good interfacial acoustic matching exhibits characteristic free spectral range (FSR) variations that are not well modeled in the literature, clearly differentiating it from resonators with poor acoustic matching. We verify this model by comparing the FSR spectra of the first experimentally demonstrated epitaxially grown Sc0.18Al0.82N/AlN/TaN/SiC HBARs (with a mismatched TaN bottom electrode) with epitaxial GaN/AlN/NbN/SiC HBARs where all constituent layers are acoustically matched to the substrate. Historically, the choice and quality of materials used for composite resonators has been limited by process constraints, but advances in epitaxial growth and heterogeneous integration techniques allow us to integrate multiple high quality, acoustically matched layers to form multi-functional composite resonators. [2020-0247]

Dynamic measurement of femtometer-displacement vibrations in mechanical resonators at microwave frequencies is critical for a number of emerging high-impact technologies including 5G wireless communications and quantum state generation, storage, and transfer. However, the resolution of continuous-wave laser interferometry, the method most commonly used for imaging vibration wavefields, has been limited to vibration amplitudes just below a picometer at several gigahertz. This is insufficient for these technologies since vibration amplitudes precipitously decrease for increasing frequency. Here we present a stroboscopic optical sampling approach for the transduction of coherent super high frequency vibrations. Phase-sensitive absolute displacement detection with a noise floor of 55 fm/√Hz for frequencies up to 12 GHz is demonstrated, achieving higher bandwidth and significantly lower noise floor simultaneously compared to previous work. An acoustic microresonator with resonances above 10 GHz and displacements smaller than 70 fm is measured using the presented method to reveal complex mode superposition, dispersion, and anisotropic propagation.

Integrating femtosecond (fs) lasers to electron microscopies has enabled direct imaging of transient structures and morphologies of materials in real time and space, namely, ultrafast electron microscopy (UEM). Here we report the development of a laser-free UEM offering the same capability of real-time imaging with high spatiotemporal resolutions but without requiring expensive fs lasers and intricate instrumental modifications. We create picosecond electron pulses for probing dynamic events by chopping a continuous beam with a radiofrequency (RF)-driven pulser, where the repetition rate of the electron pulses is tunable from 100 MHz to 12 GHz. A same broadband of electromagnetic wave is enabled for sample excitation. As a first application, we studied the GHz electromagnetic wave propagation dynamics in an interdigitated comb structure which is one of the basic building blocks for RF micro-electromechanical systems. A series of pump-probe images reveals, on nanometer space and picosecond time scales, the transient oscillating electromagnetic field around the tines of the combs, and time-resolved polarization, amplitude, and nonlinear local field enhancement. The success of this study demonstrates the feasibility of the low-cost laser-free UEM in real-space visualizing of dynamics for many research fields, especially the electrodynamics in devices associated with information processing technology., 25 pages, 4 figures

A 300 keV transmission electron microscope was modified to produce broadband pulsed beams that can be, in principle, between 40 MHz and 12 GHz, corresponding to temporal resolution in the nanosecond to picosecond range without an excitation laser. The key enabling technology is a pair of phase-matched modulating and de-modulating traveling wave metallic comb striplines (pulsers). An initial temporal resolution of 30 ps was achieved with a strobe frequency of 6.0 GHz. The placement of the pulsers, mounted immediately below the gun, allows for preservation of all optical configurations, otherwise available to the unmodified instrument, and therefore makes such a post-modified instrument for dual-use, i.e., both pulsed-beam mode (i.e., stroboscopic time-resolved) and conventional continuous waveform mode. In this article, we describe the elements inserted into the beam path, challenges encountered during integration with an in-service microscope, and early results from an electric-field-driven pump–probe experiment. We conclude with ideas for making this class of instruments broadly applicable for examining cyclical and repeatable phenomena.

Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency >99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding (f × Q) and phonon lifetimes up to 1.36 × 1017 Hz and 500 µs respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits., Acoustic resonators may find application for qubit coupling in compact quantum information and processing systems. Here the authors show a multi-phonon source with high quality factors and long phonon lifetimes via epitaxial high-overtone bulk acoustic resonators.

The optical knife-edge displacement measurement technique can be used to quantify in-plane vibrations of microstructures at radio frequencies. This paper presents an analytical model and experimental results for this technique that demonstrate precise displacement measurements for electrostatic microelectromechanical resonators at frequencies ranging from 13 MHz to 895 MHz. It is also shown that high-resolution spatial mapping of displacement mode shapes for fundamental and higher order vibration modes can be achieved. The optical knife-edge measurements have a resolution as low as 455 fm/ $\surd$ Hz at 13.6 MHz, and under 1 pm/ $\surd$ Hz up to 1.4 GHz. This paper expands the capabilities of the knife-edge technique by working with all types of in-plane microelectromechanical resonators, improving the resolution by at least a factor of 2, and increasing the frequency range by a factor of 60. [2018-0094]

Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular beam epitaxy. Each sample displayed negative differential resistance (NDR) at room temperature. The figures-of-merit quantified were peak-to-valley current ratio (PVCR), yield of the device with room-temperature NDR, and peak current density (Jp). The figures-of-merit demonstrate an inverse relationship between PVCR/yield and Jp over this growth temperature series. X-ray diffraction and transmission electron microscopy were used to determine the growth rates, and layer thicknesses were used to explain the varying figures-of-merit. Due to the high yield of devices grown at 760 °C and 810 °C, the PVCR, peak voltage (Vp), and Jp were plotted vs device area, which demonstrated high uniformity and application tunability. Peak current densities of up to 1.01 MA/cm2 were observed for the sample grown at 900 °C. publishedVersion

Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular material after silicon in the semiconductor industry. The prime movers behind this trend are LEDs, microwave, and more recently, power electronics. New areas of research also include spintronics and nanoribbon transistors, which leverage some of the unique properties of GaN. GaN has electron mobility comparable with silicon, but with a bandgap that is three times larger, making it an excellent candidate for high-power applications and high-temperature operation. The ability to form thin-AlGaN/GaN heterostructures, which exhibit the 2-D electron gas phenomenon leads to high-electron mobility transistors, which exhibit high Johnson's figure of merit. Another interesting direction for GaN research, which is largely unexplored, is GaN-based micromechanical devices or GaN microelectromechanical systems (MEMS). To fully unlock the potential of GaN and realize new advanced all-GaN integrated circuits, it is essential to cointegrate passive devices (such as resonators and filters), sensors (such as temperature and gas sensors), and other more than Moore functional devices with GaN active electronics. Therefore, there is a growing interest in the use of GaN as a mechanical material. This paper reviews the electromechanical, thermal, acoustic, and piezoelectric properties of GaN, and describes the working principle of some of the reported high-performance GaN-based microelectromechanical components. It also provides an outlook for possible research directions in GaN MEMS.

This paper presents the analysis, design, fabrication, and the first measured results demonstrating the use of gallium nitride (GaN)-based micromechanical resonator arrays as high-sensitivity, low-noise infrared (IR) detectors. The IR sensing mechanism is based on monitoring the change in the resonance frequency of the resonators upon near IR radiation. The resonators are characterized for their RF and thermal performance and exhibit a radiant responsivity of 1.68%/W, thermal time constant on the order of 556 μs, and an average IR responsivity of -1.5% when compared with a reference resonator, for a 100 mK radiation-induced temperature rise. An analysis of the design of the devices is presented as a path toward better design, specifically, for low thermal noise equivalent temperature difference in the long wavelength IR spectrum.

We report on the characterization of thin-film near and short wavelength infrared absorbers comprised of carbon nanotubes dispersed in a polymer. Charged nanodiamond particles are used to effectively and uniformly disperse the carbon nanotubes in the polymer matrix, leading to a very homogenous film. Using this new technique, we demonstrate an infrared absorption of up to 95% in films with thicknesses . This remarkably high absorption is the result of low reflection off the surface and high absorption across the film thickness. The complex refractive index of the films is extracted using an effective media approximation. Calculations show the film has a wide angle for high absorption and is polarization independent. These films are easy to fabricate, robust and damage-resistant, and are compatible with post-processing techniques. These films can be used as the coating layer to boost the efficiency of uncooled infrared sensors and solar-thermal energy harvesters.

We systematically demonstrate that one-dimensional phononic crystal (1-D PnC) tethers can significantly reduce tether loss in micromechanical resonators to a point where the total energy loss is dominated by intrinsic mechanisms, particularly phonon damping. Multiple silicon resonators are designed, fabricated, and tested to provide comparisons in terms of the number of periods in the PnC and the resonance frequency, as well as a comparison with conventional straight-beam tethers. The product of resonance frequency and measured quality factor (f×Q) is the critical figure of merit, as it is inversely related to the total energy dissipation in a resonator. For a wide range of frequencies, devices with PnC tethers consistently demonstrate higher f×Q values than the best conventional straight-beam tether designs. The f×Q product improves with increasing number of PnC periods, and at a maximum value of 1.2 × 1013 Hz, approaches limiting values set by intrinsic material loss mechanisms.

This work presents the first comprehensive investigation of phonon-electron interactions in bulk acoustic standing wave (BAW) resonators made from piezoelectric semiconductor (PS) materials. We show that these interactions constitute a significant energy loss mechanism and can set practical loss limits lower than anharmonic phonon scattering limits or thermoelastic damping limits. Secondly, we theoretically and experimentally demonstrate that phonon-electron interactions, under appropriate conditions, can result in a significant acoustic gain manifested as an improved quality factor (Q). Measurements on GaN resonators are consistent with the presented interaction model and demonstrate up to 35% dynamic improvement in Q. The strong dependencies of electron-mediated acoustic loss/gain on resonance frequency and material properties are investigated. Piezoelectric semiconductors are an extremely important class of electromechanical materials, and this work provides crucial insights for material choice, material properties, and device design to achieve low-loss PS-BAW resonators along with the unprecedented ability to dynamically tune resonator Q.

This paper reports on the fabrication and characterization of thin-film nanocomposites comprised of tangled carbon nanotubes in a polymer matrix. The concentration of nanotubes in the polymer was significantly increased using detonation nanodiamonds. Nanodiamonds reduce the surface forces between the polymer and the nanotubes and mitigate the agglomeration problem of nanotubes in polymer. This resulted in thinner and more uniform networks that are efficient absorbers of infrared energy over a broad spectrum, ranging from the visible to the mid-wavelength infrared. An infrared absorbance of 97% was achieved for a 1.6 μm thick nanocomposite film across the spectral range of 714 nm to 5 μm. The films are mechanically and thermally stable up to 300 °C, and can be integrated with microbolometers to enhance their responsivity.

This paper presents the theory and measured results of a lownoise un-cooled infrared (IR) detector, which uses a combination of piezoelectric, pyroelectric, electrostrictive, and resonant effects to achieve high sensitivity. The sensor consists of a high-Q gallium nitride (GaN) micro-mechanical resonator coated with an IR absorber layer. The IR absorber converts the IR energy into heat. The generated heat causes a shift in the frequency characteristics of the GaN resonators. IR detection is achieved by sensing the shift in the resonance frequency of the exposed GaN resonator as compared to a reference resonator. A prototype GaN-based IR sensor is implemented, showing a frequency shift of 400 Hz per μW of absorbed power. The change in the beat frequency upon IR radiation is 1830 ppm/μW, making it possible to sense IR radiation in nano watts range. INTRODUCTION The detection of infrared radiation is generally accomplished using either photonic or thermal detectors, both of which have generated a large amount of research over the last two decades [1]. The relative disadvantages of thermal detectors in terms of detectivity and response time are balanced by the fact that they do not require cooling systems, reducing the system weight, power consumption, and form factor. Furthermore, thermal detectors are better suited for radiation extending into the far wavelength IR, which is extremely useful for optical astronomy. While bolometric devices have been the most popular thermal sensors commercially, there is an increasing interest in resonant IR detectors [2]-[4]. This work presents a GaN-based resonant IR sensor that utilizes the unique material properties of GaN to achieve high sensitivity. A reference resonator is included in the system for self-calibration (Fig. 1). Fig. 2 shows a representative scanning electron micrograph (SEM) of a GaN detector. Figure 1: Schematic of a resonant sensor and a reference pair with interdigitated finger electrodes. The sensor is coated with an absorber layer. The reference resonator is either not coated with the absorber or the absorber layer on the reference resonator is blocked using the top electrode.