17 results on '"Shin, Y.G."'
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2. Issues of Ultrashallow Junction for Sub-50 nm Gate Length Transistors: Metrology, Dopant Loss, and Novel Electrostatic Junction.
3. Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE).
4. The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs.
5. The development of dual gate poly scheme with plasma nitrided gate oxide for mobile high performance DRAMs: plasma process monitoring and the correlation with electrical results.
6. Low voltage (1.2V) and high performance mobile DRAM device technology with dual poly-silicon gate using plasma nitrided gate oxide.
7. Automatic construction of assembly partial-order graphs.
8. A cooperative planning system for flexible assembly.
9. Nitride cladded poly-Si spacer LOCOS (NCPSL) isolation technology for the 1 giga bit DRAM.
10. Stress minimization in deep sub-micron full CMOS devices by using an optimized combination of the trench filling CVD oxides.
11. Highly manufacturable process technology for reliable 256 Mbit and 1 Gbit DRAMs.
12. Performance Boosting of Peripheral Transistor for High Density 4Gb DRAM Technologies by SiGe Selective Epitaxial Growth Technique.
13. Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers.
14. Etch rate monitoring with optical emission spectra in dry etching process.
15. Assembly planning based on subassembly extraction.
16. Thermally induced capacitance and electric field domains in [formula omitted] quantum well infrared photodetector
17. Optical investigation of [formula omitted] heterointerfaces grown by metalorganic chemical vapor deposition
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