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6. Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters.

7. Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation.

8. MOCVD growth of β-Ga2O3 with fast growth rates (>4.3 μm/h), low controllable doping, and superior transport properties.

11. Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures.

12. Thin channel Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown.

13. Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3.

14. Investigation on the oil sorption capability of silkworm cocoon waste.

15. High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes.

17. Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2.

18. In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1−x)2O3 thin films.

22. Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface.

23. Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates.

24. Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits.

27. Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3.

29. Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices.

30. Deep level defects and cation sublattice disorder in ZnGeN2.

31. Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy.

32. 7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management.

33. Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium.

34. Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices.

36. Trap characterization of high-growth-rate laser-assisted MOCVD GaN.

37. Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch.

38. The role of carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor.

39. Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes.

40. Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX.

42. Ultrafast growth rate and high mobility In2O3 films grown on c-sapphire via low pressure chemical vapor deposition.

44. Investigation of carbon incorporation in laser-assisted MOCVD of GaN.

45. Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates.

46. Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2.