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21 results on '"Laurent Mazenq"'

1. Electro-Absorption Modulator Vertically Integrated on a VCSEL: Microstrip-Based High-Speed Electrical Injection on Top of a BCB Layer

Author

Aurélie Lecestre, Hugo Thienpont, Christophe Viallon, Ayad Ghannam, Guilhem Almuneau, Ludovic Marigo-Lombart, Alexandre Rumeau, Alexandre Arnoult, Krassimir Panajotov, Laurent Mazenq, Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Service Instrumentation Conception Caractérisation (LAAS-I2C), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), 3DiS Technologies, Department of Applied Physics and Photonics [Brussels] (TONA), Vrije Universiteit Brussel (VUB), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Applied Physics and Photonics, and Brussels Photonics Team

Subjects
Materials science, Electro-absorption modulator, 02 engineering and technology, VCSEL, Microstrip, Vertical-cavity surface-emitting laser, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, 020210 optoelectronics & photonics, Benzocyclobutene, High-speed modulation, high-speed modulation, 0202 electrical engineering, electronic engineering, information engineering, electro-absorption modulator, Output impedance, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, BCB, business.industry, Coplanar waveguide, Atomic and Molecular Physics, and Optics, Electrical contacts, chemistry, Modulation, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business, BENZOCYCLOBUTENE, FABRICATION, PASSIVATION, FILMS
Abstract

International audience; Vertical-cavity surface-emitting lasers with vertically integrated electro-absorption modulators (EAM-VCSELs) potentially can reach higher modulation bandwidths than directly current-modulated VCSELs. The aforementioned device modulation capabilities are, however, currently restricted by their electrical contact parasitics. It, thus, becomes critical to optimize their access line to improve performance. In this paper, we numerically and experimentally demonstrate that a microstrip (MS) access line using a planarized benzocyclobutene (BCB) layer exhibits improved high-frequency characteristics compared to the coplanar waveguide (CPW) access line used to-date, since it reduces the losses induced by the doped substrates. We also use this opportunity to introduce an innovative technique for BCB layer planarization, which is not only compatible with the EAM-VCSEL double-mesa structure, but is also independent of the device pitch. The resulting BCB layer dielectric permittivity and losses are measured up to 100 GHz, and a side-by-side comparison of the electrical response of three-electrodes MS and CPW access lines is subsequently carried out. Finally, using the measured pad and access line RF responses and the EAM modulation characteristics, the devices with MS access are shown to be no longer limited by their electrode parasitics, but by the modulator internal impedance.

Published
2019

2. Fabrication of Doubly-Corrugated Zero-Contrast-Grating for Broadband Pixelated Filtering in the Mid-IR Range

Author

Olivier Gauthier-Lafaye, Antoine Monmayrant, Henri Camon, Léopold Macé, Hervé Leplan, Fabien Pradal, Meihdi Oussalah, Laurent Mazenq, Pascal Dubreuil, Adrien Hervy, Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), REOSC-safran, Société REOSC-Sagem, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
Fabrication, Materials science, business.industry, Bandwidth (signal processing), chemistry.chemical_element, Germanium, 02 engineering and technology, Filter (signal processing), Grating, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Semiconductor, Band-pass filter, chemistry, 0103 physical sciences, Broadband, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
Abstract

International audience; Zero-contrast grating filters (ZCG) car be used to implement efficient bandpass transmission filter with narrow bandwidths of a few nanometers. In a precedent article [1], we have illustrated the validity of the ZCG approach for the mid-IR range using germanium and calcium fluoride, as well as the possibility to increase both the bandwidth and the angular acceptance of such filters by a decade or more using a double corrugation scheme for the grating. However, when it comes to fabricating such devices, conventional semiconductor methods cannot be straightforwardly applied because of the specific requirements of the infrared materials used. Adapting specific methods of the semiconductor industry, we manage to fabricate such devices. A first optical characterization is performed.

Published
2018

3. Development of All-Around SiO2/Al2O3 Gate, Suspended Silicon Nanowire Chemical Field Effect Transistors Si-nw-ChemFET

Author

Aurélie Lecestre, Pierre Temple-Boyer, Laurent Mazenq, Auriane Grappin, Jérôme Launay, Ahmet Lale, David Bourrier, Équipe MICrosystèmes d'Analyse (LAAS-MICA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
0209 industrial biotechnology, Materials science, Fabrication, Silicon, potentiometric sensor, microfluidics, Nanowire, chemistry.chemical_element, lcsh:A, Nanotechnology, 02 engineering and technology, biosensor, 01 natural sciences, law.invention, MOSFET, 020901 industrial engineering & automation, microsensor, Nanosensor, law, silicon nanowire, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Thermal oxidation, pH measurement, 010401 analytical chemistry, 0104 chemical sciences, ChemFET, gate all-around, finFET, chemistry, Field-effect transistor, nanosensor, ISFET, lcsh:General Works, Photolithography
Abstract

International audience; We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and " low cost " standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.

Published
2017

4. High-K thin films for simultaneous dielectric actuation and detection of M/NEMS flexural vibration

Author

Fabrice Mathieu, Laurent Mazenq, Adrian Laborde, Cecile Fuinel, Christian Bergaud, Bernard Legrand, Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Service Instrumentation Conception Caractérisation (LAAS-I2C), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
Cantilever, Materials science, business.industry, Electrical engineering, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, Atomic layer deposition, chemistry.chemical_compound, Transducer, Flexural strength, Silicon nitride, chemistry, Optoelectronics, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, High-κ dielectric
Abstract

International audience; We show for the first time that a nanometer-scale dielectric thin film can be used as an efficient electromechanical transducer to simultaneously actuate and detect the flexural vibration of micro/nanoresonators. In this study, the first flexural vibrating mode of 16 μm long, and 350 nm-thick cantilevers are actuated by a 15 nm-thick silicon nitride layer, and detected close to resonance, at megahertz frequencies. We also measure optically its displacement, and extract and compare the transducer efficiency to an analytical model. This work would be further strengthened by the use of high-K dielectric materials obtained by atomic layer deposition.

Published
2017

5. Design, realization and characterization of all-arround SiO2/Al2O3 gate, suspended silicon nanowire chemical field effect transistors

Author

Auriane Grappin, Pierre Temple-Boyer, Ahmet Lale, Aurélie Lecestre, Jérôme Launay, Laurent Mazenq, David Bourrier, Équipe MICrosystèmes d'Analyse (LAAS-MICA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
Fabrication, Materials science, Silicon, potentiometric sensor, microfluidics, Nanowire, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, biosensor, 010402 general chemistry, 01 natural sciences, law.invention, MOSFET, microsensor, Nanosensor, law, silicon nanowire, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Thermal oxidation, pH measurement, 021001 nanoscience & nanotechnology, 0104 chemical sciences, gate all-around, ChemFET, finFET, chemistry, Field-effect transistor, nanosensor, ISFET, Photolithography, 0210 nano-technology
Abstract

International audience; We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and "low cost" standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.

Published
2017

6. Spin crossover materials for MEMS actuation: Film integration and characterization

Author

Sylvain Rat, Lionel Salmon, Liviu Nicu, Azzedine Bousseksou, Laurent Mazenq, Isabelle Séguy, Gábor Molnár, Thierry Leichle, Maria Dolores Manrique-Juarez, Fabrice Mathieu, Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Laboratoire de chimie de coordination (LCC), Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Service Instrumentation Conception Caractérisation (LAAS-I2C), Équipe MICrosystèmes d'Analyse (LAAS-MICA), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie de Toulouse (ICT-FR 2599), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), and Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Nanoelectromechanical systems, Materials science, Silicon, business.industry, Analytical chemistry, Spin transition, chemistry.chemical_element, Young's modulus, 02 engineering and technology, Structural engineering, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, symbols.namesake, chemistry, Spin crossover, Residual stress, symbols, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Thin film, 0210 nano-technology, business, Elastic modulus
Abstract

International audience; This work describes the integration of molecular spin crossover (SCO) compound [Fe(H2B(pz)2)2(phen)] 1 (H2B(pz)2 = dihydrobis(pyrazolyl)borate, phen = 1,10phenantroline) into silicon MEMS with the aim to determine the mechanical properties of the SCO thin film. Analytical methods using the experimental resonance frequency before and after deposition of 1 are used to extract the elastic modulus (E) and residual stress (σ) induced by the film deposition, leading to values of E = 6.9 ± 0.1 GPa and σ = 74.8 MPa respectively. Additional mechanical parameters as a consequence of the expected spin transition were also predicted. These results provide a step towards the integration of SCO materials for future applications as actuators in MEMS/NEMS devices.

Published
2017

7. Single lithography-step self-aligned fabrication process for Vertical-Cavity Surface-Emitting Lasers

Author

Pascal Dubreuil, Ludovic Marigo-Lombart, Alexandre Arnoult, Guilhem Almuneau, Nicolas Mauran, Hugo Thienpont, Krassimir Panajotov, Laurent Mazenq, Benjamin Reig, Applied Physics and Photonics, Faculty of Engineering, and Brussels Photonics Team

Subjects
Fabrication, Materials science, Passivation, Aperture, Physics::Optics, Photonic devices fabrication, 02 engineering and technology, Photoresist, 01 natural sciences, Vertical-cavity surface-emitting laser, law.invention, Self-aligned processing flow, vcsels, Materials Science(all), law, 0103 physical sciences, Vertical cavity surface emitting lasers, Lift-off process, General Materials Science, Lithography, plasma, 010302 applied physics, business.industry, Mechanical Engineering, 021001 nanoscience & nanotechnology, Laser, Condensed Matter Physics, CHEMICAL-VAPOR-DEPOSITION, Mechanics of Materials, Optoelectronics, Photonics, SILICON-NITRIDE, 0210 nano-technology, business, Low temperature PECVD
Abstract

We demonstrate a self-aligned process to fabricate Vertical-Cavity Surface-Emitting Lasers (VCSEL) which combines, within a single lithographic step the mesa etch, the surface passivation, the opening of the emission window and the top annular metallization. This process flow, based on a double photoresist layer enabling two lift-off steps, offers great advantages such as easy and fast implementation while insuring a perfect alignment between the emitting window, the passivation layer aperture and the metal-ring contact. VCSEL fabrication is drastically simplified and its repeatability improved. Finally, this process can be advantageously applied to other photonic devices such waveguide-ridge lasers, modulators, LED, etc.

Published
2017

8. HIGH-K THIN FILMS AS DIELECTRIC TRANSDUCERS FOR FLEXURAL M/NEMS RESONATORS

Author

Olivier Thomas, Bernard Legrand, Adrian Laborde, Cécile Fuinel, Laurent Mazenq, Liviu Nicu, Thierry Leichle, Khadim Daffe, Équipe NanoBioSystèmes (LAAS-NBS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire des Sciences de l'Information et des Systèmes (LSIS), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Arts et Métiers Paristech ENSAM Aix-en-Provence-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), IEEE, Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, and Centre National de la Recherche Scientifique (CNRS)-Arts et Métiers Paristech ENSAM Aix-en-Provence-Université de Toulon (UTLN)-Aix Marseille Université (AMU)

Subjects
Nanoelectromechanical systems, Materials science, business.industry, Orders of magnitude (temperature), 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 7. Clean energy, Atomic layer deposition, chemistry.chemical_compound, Flexural strength, Silicon nitride, chemistry, Electronic engineering, Optoelectronics, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, High-κ dielectric
Abstract

International audience; We show that a nanometer-thick high-K material can be used as an electromechanical transducer to actuate the flexural mode of micro/nanoresonators. In this study, a 15 nm silicon nitride layer is employed on top of 320 nm thick silicon beams. The devices, smaller by 2 orders of magnitude than in previous studies, are successfully driven into vibration at resonance frequencies greater than 1 MHz, nanometer amplitudes, and quality factors greater than 2,000 in vacuum. We also deduce the transduction efficiency from a thermomechanical displacement noise calibration. This work paves the way for efficient electromechanical transduction scheme at the nanoscale, which would be further strengthened by the use of high-K dielectric materials obtained by atomic layer deposition.

Published
2016

9. Biological functionalization of massively parallel arrays of nanocantilevers using microcontact printing

Author

Christophe Thibault, Thierry Leichle, Christophe Vieu, A. Bouchier, Denis Dezest, S. Salomon, Laurent Mazenq, S. Guillon, Liviu Nicu, Fabrice Mathieu, Florent Seichepine, Équipe Ingénierie pour les sciences du vivant (LAAS-ELIA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe NanoBioSystèmes (LAAS-NBS), Service Instrumentation Conception Caractérisation (LAAS-I2C), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
010302 applied physics, Nanoelectromechanical systems, Nanostructure, Cantilever, Materials science, Nanocantilever, Metals and Alloys, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Microcontact printing, 0103 physical sciences, Materials Chemistry, Surface modification, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, 0210 nano-technology, Instrumentation, Biosensor, Massively parallel
Abstract

International audience; In this paper, we present a back-end method for biofunctionalizing a large-scale array of nanocantilevers. Our method relies on the use of a modified microcontact printing process where molecules are delivered onto the fragile structures from the grooves of the stamp while its base sits on the chip, thus providing mechanical stability. We have used this method to print antibodies onto fabricated chips containing up to 105 nanostructures/cm2and the presence of antibodies was validated by fluorescent microscopy. Furthermore, measurement of the nanocantilever resonant frequency shifts provoked by a mean added mass of ∼140 fg/cantilever demonstrated that the cantilevers retained their mechanical integrity. Hence, the method presented here aims at providing an answer to the biofunctionalization of freestanding nanostructures for their use as biosensors

Published
2012

10. Geometry optimization of uncoated silicon microcantilever-based gas density sensors

Author

Isabelle Dufour, Johan Bertrand, Fabrice Mathieu, Thierry Leichle, Laurent Mazenq, Mohand-Tayeb Boudjiet, Liviu Nicu, Stephen M. Heinrich, Claude Pellet, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Agence Nationale pour la Gestion des Déchets Radioactifs (ANDRA), Service Instrumentation Conception Caractérisation (LAAS-I2C), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Équipe NanoBioSystèmes (LAAS-NBS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Department of Civil, Construction and Environmental Engineering [Milwaukee], Marquette University [Milwaukee], Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
Materials science, Cantilever, Hydrogen, Silicon, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Hydrogen sensor, Noise (electronics), sensitivity optimization, Density sensor, Resonator, Phase (matter), Materials Chemistry, Electrical and Electronic Engineering, Composite material, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, hydrogen sensor, 010401 analytical chemistry, Metals and Alloys, Natural frequency, hydrodynamic function, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Euler-Bernoulli beam theory, geometry optimization, 0210 nano-technology, microcantilever
Abstract

International audience; In the absence of coating, the only way to improve the sensitivity of silicon microcantilever-based density sensors is to optimize the device geometry. Based on this idea, several microcantilevers with different shapes (rectangular-, U-and T-shaped microstructures) and dimensions have been fabricated and tested in the presence of hydrogen/ nitrogen mixtures (H 2 /N 2) of various concentrations ranging from 0.2% to 2%. In fact, it is demonstrated that wide and short rectangular cantilevers are more sensitive to gas density changes than U-and T-shaped devices of the same overall dimensions, and that the thickness doesn't affect the sensitivity despite the fact that it affects the resonant frequency. Moreover, because of the phase linearization method used for the natural frequency estimation, detection of a gas mass density change of 2 mg/l has been achieved with all three microstructures. In addition, noise measurements have been used to estimate a limit of detection of 0.11 mg/l for the gas mass density variation (corresponding to a concentration of 100 ppm of H 2 in N 2), which is much smaller than the current state of the art for uncoated mechanical resonators.

Published
2015

11. Development of pH-based ElecFET biosensors for lactate ion detection

Author

Jérôme Launay, Pierre Temple-Boyer, Abdou Karim Diallo, William Sant, Laurent Mazenq, Lyas Djeghlaf, Équipe MICrosystèmes d'Analyse (LAAS-MICA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université Assane SECK de Ziguinchor (UASZ), HEMODIA SA, Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
Conductometry, Transistors, Electronic, Potentiometric titration, Inorganic chemistry, Biomedical Engineering, Biophysics, Analytical chemistry, electrochemical sensor, hydrogen peroxide, Biosensing Techniques, 02 engineering and technology, Electrochemistry, Sensitivity and Specificity, 01 natural sciences, Chemical field-effect transistor, [CHIM.ANAL]Chemical Sciences/Analytical chemistry, Lactic Acid, glucose, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Ions, lactate, Chemistry, 010401 analytical chemistry, Reproducibility of Results, Equipment Design, General Medicine, Hydrogen-Ion Concentration, 021001 nanoscience & nanotechnology, Amperometry, 0104 chemical sciences, Electrochemical gas sensor, microelectrode, Equipment Failure Analysis, Microelectrode, ChemFET, potentiometric detection, Field-effect transistor, 0210 nano-technology, Biosensor, Biotechnology
Abstract

International audience; In this work, we report on ElecFET (Electrochemical Field Effect Transistor) devices potentially of interest for the detection of different molecules in solution. ElecFET are electrochemical microsensors in liquid phase, based on two elements: (i) a pH-sensitive chemical field effect transistor (pH-ChemFET) and (ii) a metallic microelectrode deposited around the sensitive gate. The coexistence of these two elements combines (i) potentiometric and (ii) amperometric detection effects at the microscale. Design, fabrication and experimental validation of ElecFETs based on silicon and polymer micro-technologies, are reported. We first demonstrate the detection of hydrogen peroxide (H2O2) in solution, showing a sensitivity of 5 mV/mM in the [10-100mM] concentration range. The ElecFET concept is then extended to the detection of glucose and lactate in the [1 – 30 mM] and [1 – 6 mM] concentration range respectively. The sensitivities are between 2-6 mV/mM and 8-20 mV/mM respectively.

Published
2013

12. Optical label free biodetection based on the diffraction of light by nanoscale protein gratings

Author

Christophe Vieu, Emmanuelle Trévisiol, Laurent Mazenq, Vincent Paveau, Amandine M. C. Egea, Équipe NanoBioSystèmes ( LAAS-NBS ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Service Techniques et Équipements Appliqués à la Microélectronique ( LAAS-TEAM ), Laboratoire d'Ingénierie des Systèmes Biologiques et des Procédés ( LISBP ), Institut National de la Recherche Agronomique ( INRA ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Innopsys, Équipe NanoBioSystèmes (LAAS-NBS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire d'Ingénierie des Systèmes Biologiques et des Procédés (LISBP), Institut National de la Recherche Agronomique (INRA)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Innopsys [Carbonne], Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1)-Université Toulouse - Jean Jaurès (UT2J)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1)-Université Toulouse - Jean Jaurès (UT2J), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de la Recherche Agronomique (INRA), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), and Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP )

Subjects
Diffraction, Analyte, Materials science, ADSORPTION, genetic structures, Microcontact printing, [SDV]Life Sciences [q-bio], 02 engineering and technology, Substrate (electronics), Biodetection, Grating, 010402 general chemistry, Diffraction efficiency, 01 natural sciences, IMMUNOASSAY, [SPI]Engineering Sciences [physics], Optics, ASSAY, Electrical and Electronic Engineering, Nanoscopic scale, [ SDV ] Life Sciences [q-bio], business.industry, REAL-TIME, Protein, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Patterning, 0210 nano-technology, business, Refractive index, Label free
Abstract

In this work, we use a label free biosensing technique based on the diffraction of light by molecular gratings. Molecular gratings are employed as diffractive probe arrays for protein interaction analysis. Indeed, the diffraction efficiency changes in response to analyte binding, due to a shift in line thickness and/or refractive index of the grating. In this perspective, we have developed a scanning instrument, capable of collecting at high speed the diffracted intensity emitted by molecular gratings. Nanogratings composed of anti-GST antibodies lines (500 nm width at a pitch of 1 mu m) were immobilized through Microcontact printing on a PLL-g-dextran coated substrate. By monitoring the diffracted intensity of the anti-GST antibodies gratings, we have detected GST molecules at a concentration of 0.1 mu M. This biodetection technique appears sensitive to low molecular weight molecules, such as GST (glutathione S-transferase, 26 kDa), which is an interesting result in comparison to other label free detection methods. (C) 2013 Elsevier B.V. All rights reserved.

Published
2013

13. Lead zirconate titanate nanoscale patterning by ultraviolet-based lithography lift-off technique for nano-electromechanical system applications

Author

Laurent Mazenq, Daisuke Saya, Samuel Guillon, Caroline Soyer, Jean Costecalde, Liviu Nicu, Denis Remiens, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Nanoelectromechanical systems, Materials science, Acoustics and Ultrasonics, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, Lead zirconate titanate, 01 natural sciences, law.invention, chemistry.chemical_compound, Nanolithography, chemistry, Resist, law, 0103 physical sciences, Wafer, Electrical and Electronic Engineering, Photolithography, 0210 nano-technology, Instrumentation, Lithography, Next-generation lithography
Abstract

The advantage of using lead zirconate titanate (PbZr(0.54)Ti(0.46)O(3)) ceramics as an active material in nanoelectromechanical systems (NEMS) comes from its relatively high piezoelectric coefficients. However, its integration within a technological process is limited by the difficulty of structuring this material with submicrometer resolution at the wafer scale. In this work, we develop a specific patterning method based on optical lithography coupled with a dual-layer resist process. The main objective is to obtain sub-micrometer features by lifting off a 100-nm-thick PZT layer while preserving the material's piezoelectric properties. A subsequent result of the developed method is the ability to stack several layers with a lateral resolution of few tens of nanometers, which is mandatory for the fabrication of NEMS with integrated actuation and read-out capabilities.

Published
2012

14. Efficient prototyping of large-scale pdms and silicon nanofluidic devices using pdms-based phase-shift lithography

Author

Qihao He, Yannick Viero, Aurélien Bancaud, Hubert Ranchon, Jean-Yves Fourniols, Laurent Mazenq, Équipe Nano Ingénierie et Intégration des Systèmes (LAAS-N2IS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
Materials science, Fabrication, Silicon, [PHYS.PHYS.PHYS-BIO-PH]Physics [physics]/Physics [physics]/Biological Physics [physics.bio-ph], PDMS stamp, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, law.invention, chemistry, law, Materials Chemistry, Photolithography, 0210 nano-technology, Lithography
Abstract

International audience; In this study, we explore the potential of poly-dimethylsiloxane (PDMS)-based phase-shift lithography (PPSL) for the fabrication of nanofluidic devices. We establish that this technology, which was already shown to allow for the generation of 100 nm linear or punctual features over squared centimeter surfaces with conventional photolithography systems, is readily adequate to produce some of the most popular nanofluidic systems, namely nanochannels and nanoposts arrays. We also demonstrate that PPSL technology enables to generate PDMS and silicon nanofluidic systems. This technological achievement allows us to perform single DNA molecule manipulation experiments in PDMS and silicon nano-channels, and we observe an unexpectedly slow migration of DNA in PDMS devices, which is independent on salt or pH conditions. Our data in fact hint to the existence of an anomalous response of DNA in PDMS nanofluidic devices, which is likely associated to transient nonspecific interactions of DNA with PDMS walls. Overall, our work demonstrates the efficiency and the performances of PPSL for prototyping nanofluidic systems.

Published
2012

15. Three-dimensional closed microfluidic channel fabrication by stepper projection single step lithography: the diabolo effect

Author

Liviu Nicu, Pierre Temple-Boyer, Florian Larramendy, Laurent Mazenq, Équipe MICrosystèmes d'Analyse (LAAS-MICA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Équipe NanoBioSystèmes (LAAS-NBS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
010302 applied physics, Materials science, Fabrication, Microfluidics, Biomedical Engineering, Process (computing), Bioengineering, Nanotechnology, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, Fluid transport, 01 natural sciences, Biochemistry, Microsystem, 0103 physical sciences, Stepper, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Projection (set theory), Lithography
Abstract

International audience; Microfluidic devices are currently being used in many types of biochemical microsystems for the liquid phase analysis in the frame of medical applications. This paper presents a new technique for the realization of microfluidic channels using SU-8, a commonly used epoxy-based negative photo-resist. These microchannels were fabricated owing to a single stepper UV-photolithography process. By changing the process parameters, e.g. the optical focus depth and the UV exposure dose, well-defined, covered microchannels with various dimensions and aspect ratios were realized and proven to be effective for the fluid transport by capillarity. This technique can easily be used for the fabrication of microfluidic devices in microanalysis and lab-on-chip applications realm.

Published
2011

16. Lead-zirconate titanate (PZT) nanoscale patterning by ultraviolet-based lithography lift-off technique for nano-electromechanical systems applications

Author

D. Saya, Laurent Mazenq, Caroline Soyer, Denis Remiens, S. Guillon, Jean Costecalde, Liviu Nicu, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Nanoelectromechanical systems, Materials science, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, Lead zirconate titanate, 01 natural sciences, Piezoelectricity, law.invention, chemistry.chemical_compound, Nanolithography, Resist, chemistry, law, 0103 physical sciences, Wafer, Photolithography, 0210 nano-technology, Lithography
Abstract

The advantage of using lead zirconate-titanate (PbZr 0.54 Ti 0.46 O 3 ) ceramics as an active material in nano-electromechanical systems (NEMS) comes from its relatively high piezoelectric coefficients. However, its integration within a technological process is limited by the difficulty of structuring this material with submicrometer resolution at the wafer scale. In this work, we are developed a specific patterning method based on optical lithography coupled with a dual layer resist process. The main objective is to obtain sub-micron features by lifting off a 100 nm thick PZT layer while preserving the material's piezoelectric properties. A subsequent result of the developed method is the ability to stack several layers with a lateral resolution of few tens of nanometers, which is mandatory for the fabrication of NEMS with integrated actuation and read-out capabilities.

Published
2011

17. Effect of non-ideal clamping shape on the resonance frequencies of silicon nanocantilevers

Author

Daisuke Saya, Samuel Guillon, Arnaud Lazarus, Liviu Nicu, P. Vincent, Olivier Thomas, Sorin Perisanu, Laurent Mazenq, Équipe NanoBioSystèmes (LAAS-NBS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire de Physique de la Matière Condensée et Nanostructures (LPMCN), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Mécanique des Structures et des Systèmes Couplés (LMSSC), Conservatoire National des Arts et Métiers [CNAM] (CNAM), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)

Subjects
Silicon, Cantilever, Materials science, Silicon on insulator, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Curvature, 01 natural sciences, Vibration, [SPI]Engineering Sciences [physics], Optics, 0103 physical sciences, General Materials Science, Wafer, Electrical and Electronic Engineering, Stepper, Lithography, 010302 applied physics, business.industry, Mechanical Engineering, [SPI.MECA.VIBR]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Vibrations [physics.class-ph], General Chemistry, 021001 nanoscience & nanotechnology, Nanocantilevers, Clamping, chemistry, Mechanics of Materials, 0210 nano-technology, business
Abstract

International audience; In this paper, we investigate the effects of non-ideal clamping shapes on the dynamic behavior of silicon nanocantilevers. We fabricated silicon nanocantilevers using silicon on insulator (SOI) wafers by employing stepper ultraviolet (UV) lithography, which permits a resolution of under 100 nm. The nanocantilevers were driven by electrostatic force inside a scanning electron microscope (SEM). Both lateral and out-of-plane resonance frequencies were visually detected with the SEM. Next, we discuss overhanging of the cantilever support and curvature at the clamping point in the silicon nanocantilevers, which generally arises in the fabrication process. We found that the fundamental out-of-plane frequency of a realistically clamped cantilever is always lower than that for a perfectly clamped cantilever, and depends on the cantilever width and the geometry of the clamping point structure. Using simulation with the finite-elements method, we demonstrate that this discrepancy is attributed to the particular geometry of the clamping point (non-zero joining curvatures and a flexible overhanging) that is obtained in the fabrication process. The influence of the material orthotropy is also investigated and is shown to be negligible.

Published
2011

18. Theoretical studies of the spin coating process for the deposition of polymer-based Maxwellian liquids

Author

Pierre Temple-Boyer, Jérôme Launay, B. Torbiero, Jean-Baptiste Doucet, Laurent Mazenq, Véronique Conédéra, Équipe MICrosystèmes d'Analyse (LAAS-MICA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
Materials science, 02 engineering and technology, SU-8 resin 2, 010402 general chemistry, 01 natural sciences, spin coating, Deposition (phase transition), [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, Electrical and Electronic Engineering, Thin film, Composite material, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Maxwellian liquids, chemistry.chemical_classification, Spin coating, Condensed matter physics, Polymer, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, BCB resin, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, polysiloxane, Scientific method, 0210 nano-technology
Abstract

International audience; This paper deals with the study of spin coating processes for the deposition of polysiloxane-based thin films. Specific developments are proposed in order to adapt the hydrodynamic laws theory to the spin coating of Maxwellian liquids. Theoretical and experimental results are compared, evidencing a good fit and enabling to define the Maxwellian law for the studied polysiloxane polymer. Finally, the theoretical developments are successfully extended to the BCB 4026 and SU-8 3050 photosensitive resins.

Published
2010

19. Silicon-based micromembranes with piezoelectric actuation and piezoresistive detection for sensing purposes in liquid media

Author

Laurent Mazenq, Caroline Soyer, Fabrice Mathieu, Denis Remiens, Thomas Alava, Liviu Nicu, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Engineering, business.industry, Oscillation, Mechanical Engineering, 010401 analytical chemistry, Thin layer, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Piezoelectricity, Piezoresistive effect, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Silicon based, Vibration, Quality (physics), Mechanics of Materials, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business
Abstract

In this paper, the authors report for the first time the physical cointegration of piezoelectric actuation and piezoresistive detection on resonating micromembranes dedicated to microgravimetric biosensing applications. The micromembranes are oscillated by a reverse piezoelectric phenomenon provided by a PbZrxTi1−xO3 46/54 thin layer. The oscillation amplitudes are read-out by measuring the resistance change of piezoresistors precisely located on the clamped edges of each micromembrane. The detection of the micromembranes' resonant frequencies is reported in air and deionized water. A dedicated electronic set-up operating the micromembranes in a closed-loop configuration is described. The set-up enables multiplexed tracking of four micromembranes' resonant frequencies in liquid media while enhancing the corresponding quality factors' values. Increases up to 11-fold of the micromembranes' quality factors in liquid is reported for the (0,1) vibration mode. A quality factor of up to 417 is reported in fluid.

Published
2010

20. pH-CHEMFET-BASED ANALYSIS DEVICES FOR THE BACTERIAL ACTIVITY MONITORING

Author

Pierre Temple-Boyer, Laurent Mazenq, Jérôme Launay, Marie Laure Pourciel-Gouzy, Sandrine Assié-Souleille, Équipe MICrosystèmes d'Analyse ( LAAS-MICA ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Service Instrumentation Conception Caractérisation ( LAAS-I2C ), Service Techniques et Équipements Appliqués à la Microélectronique ( LAAS-TEAM ), Équipe MICrosystèmes d'Analyse (LAAS-MICA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Service Instrumentation Conception Caractérisation (LAAS-I2C), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
Materials science, Silicon, bacterial activity detection, packaging, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 01 natural sciences, Chemical field-effect transistor, pH-ChemFET, PDMS flow-cell microdevice, Materials Chemistry, Bacterial activity, Fluidics, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, Lactobacillus crispatus, biology, 010401 analytical chemistry, Metals and Alloys, Response time, 021001 nanoscience & nanotechnology, Condensed Matter Physics, biology.organism_classification, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Electrode, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology
Abstract

International audience; Silicon and polymer microtechnologies have been developed in order to integrate pH-metry techniques in the frame of medical diagnosis. Thus, a fluidic analysis device has been designed and realised in order to monitor pH-related bacterial activities. It includes a SiO2/Si3N4 pH-sensitive chemical field effect transistor (pH-ChemFET), its titanium/gold pseudo-reference gate electrode and a poly-dimethylsiloxane (PDMS) integrated flow-cell (total volume: ≤ 2 mm 3). The whole analysis device has been used to detect the biological activities of the Lactobacillus Crispatus bacteria and to estimate its sensitivity to antibiotics. Results demonstrate the detection of pH-related bacterial metabolisms in microvolumes, enabling to reduce significantly the analysis response time with regards to standard procedures and to think to the development of pH-ChemFET-metry for medical analysis.

Published
2008

21. Cpw-fed slot microstrip MEMS-based reconfigurable arrays

Author

Ronan Sauleau, Katia Grenier, Mohamed Himdi, Laurent Mazenq, Robert Plana, L. Le Garrec, Institut d'Electronique et de Télécommunications de Rennes (IETR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Institut d'Électronique et des Technologies du numéRique (IETR), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Centre National de la Recherche Scientifique (CNRS)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, and Université de Nantes (UN)-Université de Rennes 1 (UR1)

Subjects
Microelectromechanical systems, Materials science, business.industry, 020208 electrical & electronic engineering, Beam steering, 020206 networking & telecommunications, 02 engineering and technology, Directivity, Microstrip, Radiation pattern, Beamwidth, Microstrip antenna, Optics, Transmission line, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

We investigate here the performance of a reconfigurable CPW-fed slot microstrip array whose radiation pattern can be controlled using MEMS switches with independent actuations. Full wave simulations of a four elements array, fabricated on a high-permittivity substrate, confirms that return losses remain lower than -10 dB for a half-power beamwidth comprised between 18.5/spl deg/ and 56/spl deg/ at 40.5 GHz. Design constraints, radiation performance and measurements are presented. Characteristics of larger 1D arrays and 2D arrays are also discussed.

Published
2004

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