1. High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes.
- Author
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Saha, Sudipto, Meng, Lingyu, Yu, Dong Su, Anhar Uddin Bhuiyan, A. F. M., Zhao, Hongping, and Singisetti, Uttam
- Subjects
METAL organic chemical vapor deposition ,SCHOTTKY barrier diodes ,SCHOTTKY barrier ,CHEMICAL vapor deposition ,ELECTRONIC equipment ,THIN films ,BREAKDOWN voltage - Abstract
We report on the growth of Si-doped homoepitaxial β-Ga
2 O3 thin films on (010) Ga2 O3 substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium (TEGa) and trimethylgallium (TMGa) precursors. The epitaxial growth achieved an impressive 9.5 μm thickness at 3 μm/h using TMGa, a significant advance in material growth for electronic device fabrication. This paper systematically studies the Schottky barrier diodes fabricated on the three MOCVD-grown films, each exhibiting variations in the epilayer thickness, doping levels, and growth rates. The diode from the 2 μm thick Ga2 O3 epilayer with TEGa precursor demonstrates promising forward current densities, the lowest specific on-resistance, and the lowest ideality factor, endorsing TEGa's potential for MOCVD growth. Conversely, the diode from the 9.5 μm thick Ga2 O3 layer with TMGa precursor exhibits excellent characteristics in terms of lowest leakage current, highest on-off ratio, and highest reverse breakdown voltage of −510 V without any electric field management, emphasizing TMGa's suitability for achieving high growth rates in Ga2 O3 epilayers for vertical power electronic devices. [ABSTRACT FROM AUTHOR]- Published
- 2024
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