Search

In this paper, a three-dimensional CMOS technology is proposed and implemented using stacked Fin-CMOS (SF-CMOS) architecture. The technology is based on a double layer silicon-on-insulator wafer formed by two oxygen implants to create two single-crystal silicon films with an oxide isolation layer in between. The proposed approach achieves a 50% area reduction and significant shortening of the wiring distance between active devices through vertical connection when compared with conventional planar CMOS technology. The SF-CMOS technology also inherits the scalability and two-dimensional processing compatibility of the FinFET structure. SF-CMOS devices and simple circuits were fabricated and characterized. [ABSTRACT FROM AUTHOR]

Proposes a three-dimensional (3-D) complementary metal oxide semiconductor (CMOS) integrated circuit based on the conventional CMOS silicon-on-insulator technology. Discussion on the 3-D thin film transistor CMOS technology and design issues; Description on the fabrication process; Device characteristics; Inverter characteristics and circuit performance.

In this paper we present an efficient structural approach for diagnosing board interconnects using boundary-scan. Whereas existing diagnosis approaches assume only wired-AND or wired-OR bridging fault model, we consider a more complex bridging short fault model in a CMOS circuit environment. The diagnostic test set is generated on the basis of graph theoretic technique and the adjacency fault model is adopted. By using the structural information of the wiring layout, the test length can be reduced. Both one-step and two-step diagnosis algorithms are given. They guarantee the complete diagnosis of multiple interconnect faults with no aliasing or confounding. The algorithms have been evaluated by simulation on several benchmark layouts and randomly generated layouts. Simulation results show that more than 50% reduction in the number of tests can be achieved for two-step diagnosis when the fault rate is very small, such as in a matured product line. This can significantly save the diagnosis cost for boundary-scan testing. [ABSTRACT FROM AUTHOR]

A local silicon-gate carbon nanotube field effect transistor (CNFET) configuration has been proposed and implemented for integration purpose. By combining the advantages of in situ carbon nanotube growth technology and the silicon-on-insulator technology, we have realized the CNFETs with individual device operation, low parasitic capacitance, high yield fabrication, and better compatibility to the complementary-metal-oxide-semiconductor (CMOS) process. The CNFETs show up-to-date electrical performance. The scaling effect of gate oxide is also explored. This configuration makes CNFET a step closer to the CMOS integrated circuit application. [ABSTRACT FROM AUTHOR]

A stacked three-dimensional Fin-CMOS (SF-CMOS) technology has been proposed and implemented. The technology is based on a double-layer SOI wafer formed by performing two oxygen implants to form two single-crystal silicon films with isolation layer in between. The proposed approach achieves a 50 % area reduction and significant shortening of wiring distance between the active devices when compared with existing planar CMOS technology. The SF-CMOS technology also inherits the scalability and two-dimensional processing compatibility of the FinFET architecture. [ABSTRACT FROM AUTHOR]