59 results on '"Aluminum -- Electric properties"'
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2. AlGaN/GaN/GaN:C back-barrier HFETs with breakdown voltage of over 1 kV and low R_{\scriptscriptstyle {\rm ON}} \times A
3. Effects of short-term DC-bias-induced stress on n-GaN/AlGaN/GaN MOSHEMTs with liquid-phase-deposited \hbox {Al}_{2}\hbox {O}_{3} as a gate dielectric
4. Reduction of turn-on, knee, and offset voltages of InAlGaP/GaAs HBTs using \delta -doping in the InAlGaP emitter
5. High-density MIM capacitors with porous anodic alumina dielectric
6. A new multipulse technique for probing electron trap energy distribution in high- \kappa materials for flash memory application
7. 65-, 45-, and 32-nm aluminium and copper transmission-line model at millimeter-wave frequencies
8. Study on the temperature dependence of the microwave-noise characteristics in AlGaN/GaN HEMTs
9. Manipulating the microcavity structure for highly efficient inverted top-emitting organic light-emitting diodes: simulation and experiment
10. Industrially feasible rear passivation and contacting scheme for high-efficiency n-type solar cells yielding a V_{\rm oc} of 700 mV
11. Loss measurement of aluminum thin-film coplanar waveguide (CPW) lines at microwave frequencies
12. The {\bf ALU}^{+} concept: N -type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter
13. Characterization and analysis of the temperature-dependent on -resistance in AlGaN/GaN lateral field-effect rectifiers
14. Numerical simulations of thick-aluminum-wire behavior under megaampere-current drive
15. AlN/ZnO/diamond waveguiding layer acoustic wave structure: Theoretical and experimental results
16. Off-state breakdown characterization in AlGaN/GaN HEMT using drain injection technique
17. Multiparameter admittance spectroscopy as a diagnostic tool for interface states at oxide/semiconductor interfaces
18. Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicon-germanium source/drain
19. Analysis of dark current mechanisms for split-off band infrared detectors at high temperatures
20. AlGaN/GaN/AlGaN DH-HEMTs breakdown voltage enhancement using multiple grating field plates (MGFPs)
21. X-ray absorption and magnetic circular dichroism studies of [Co.sub.2]FeAl in magnetic tunnel junctions
22. Fast dump of the ATLAS toroids
23. Design of a 380 m DC HTS power cable
24. Final development and test preparation of the first 3.7 m long [Nb.sub.3]Sn quadrupole by LARP
25. Assembly and loading of LQS01, a shell-based 3.7 m long quadrupole magnet for LARP
26. Numerical study on quench process in multi-sectioned adiabatic superconducting electromagnetic iron separator
27. AlN passivation over AlGaN/GaN HFETs for surface heat spreading
28. Tracking and erosion resistance of high temmperature vulcanizaing ATH-free silicone rubber
29. Failure prediction analysis of an ACCC conductor subjected to thermal and mechanical stresses
30. Active region design for high-speed 850-nm VCSELs
31. Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs
32. Investigation of Al-doped emitter on N-type rear junction solar cells
33. A wide-frequency model of metal foam for shielding applications
34. Performance analysis of aluminum- and copper-rotor induction generators considering skin and thermal effects
35. Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors
36. Impact of trapped charge and interface defects on the degradation of the optical and electrical characteristics in NPD/Al[q.sub.3] OLEDs
37. High-power and high-efficiency InGaN-based light emitters
38. Electric explosion of aluminum metallized film
39. A comprehensive study of the resistive switching mechanism in Al/TiOx/TiO2/Al-structured RRAM
40. Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices
41. Supermodes in broad ridge (Al,In)GaN laser diodes
42. Electrooptical analysis of effects induced by floating metallic interlayers in organic LEDs
43. The solenoid magnet and flux return for the PANDA experiment
44. Conceptual design of a high-Q, 3.4-GHz thin film quartz resonator
45. Influence of lateral spreading of implanted aluminum ions and implantation-induced defects on forward current-voltage characteristics of 4H-SiC junction barrier Schottky diodes
46. Effects of electromagnetic radiation on the Q of quartz resonators
47. Determination of work functions in the [Ta.sub.1-x] [Al.sub.x] [N.sub.y]/Hf [O.sub.2] advanced gate stack using combinatorial methodology
48. A polycrystalline silicon thin-film transistor with self-aligned metal electrodes formed using aluminum-induced crystallization
49. Remarkable increase in the channel mobility of SiC-MOSFETs by controlling the interfacial Si[O.sub.2] layer between [Al.sub.2][O.sub.3] and SiC
50. Detailed analysis and precise modeling of multiple-energy Al implantations through Si[O.sub.2] layers into 4H-SiC
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