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102 results on '"Pearton, S. J."'

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1. Thickness dependence of material quality in GaAs-on-Si grown by metalorganic chemical vapor deposition.

2. Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition.

3. Rapid annealing of GaAs: Uniformity and temperature dependence of activation.

4. Hydrogenation of shallow-donor levels in GaAs.

6. Defects and ion redistribution in implant-isolated GaAs-based device structures.

7. Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors.

8. Isolation properties and experimental ranges of high energy ions in GaAs and InP.

9. Characteristics of Be+ and O+ or H+ co-implantation in GaAs/AlGaAs heterojunction bipolar transistor structures.

10. Ion milling damage in InP and GaAs.

11. Elevated temperature reactive ion etching of GaAs and AlGaAs in C2H6/H2.

13. Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2 gas mixtures.

14. Implantation temperature dependence of electrical activation, solubility, and diffusion of implanted Te, Cd, and Sn in GaAs.

15. Characterization of InP/GaAs/Si structures grown by atmospheric pressure metalorganic chemical vapor deposition.

16. Reactive ion etching of GaAs with CCl2F2:O2: Etch rates, surface chemistry, and residual damage.

17. Electrical effects of atomic hydrogen incorporation in GaAs-on-Si.

19. A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition.

20. Characterization of n-type regions in GaAs formed by silicon fluoride molecular ion implantations.

21. Antiphase domains in GaAs grown by metalorganic chemical vapor deposition on silicon-on-insulator.

22. The role of crystal-growth properties on silicon implant activation processes for GaAs.

23. Photoluminescence from annealed semi-insulating GaAs crystals: The 1.360-eV band.

24. Growth of InGaP by metalorganic molecular beam epitaxy using novel Ga sources.

25. Annealing behavior of Ga+ implanted GaAs/AlGaAs observed by transmission electron microscopy.

26. Electrical activation of implanted Be, Mg, Zn, and Cd in GaAs by rapid thermal annealing.

27. Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing.

28. Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage.

29. Etching of As- and P-Based III-V Semiconductors in a Planar Inductively Coupled BCl3/Ar Plasma.

30. Novel carbon-doped p-channel GaAs metal-semiconductor field-effect transistor grown by metalorganic molecular beam epitaxy.

31. Nitridization of gallium arsenide surfaces: Effects on diode leakage currents.

32. Hydrogenation of GaAs-on-InP.

33. Incorporation of carbon in heavily doped AlxGa1-xAs grown by metalorganic molecular beam epitaxy.

34. Injection and drift of a positively charged hydrogen species in p-type GaAs.

35. Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures.

36. Carbon implantation in InGaAs and AlInAs.

37. Implant isolation of GaAs-AlGaAs heterojunction bipolar transistor structures.

38. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy.

39. Zinc delta doping of GaAs by organometallic vapor phase epitaxy.

40. Carbon and zinc delta doping for Schottky barrier enhancement on n-type GaAs.

41. Carbon in GaAs: Implantation and isolation characteristics.

42. Role of vanadium in organometallic vapor phase epitaxy grown GaAs.

43. Characterization of GaAs grown by metalorganic chemical vapor deposition on Si-on-insulator.

44. Heterointerface stability in GaAs-on-Si grown by metalorganic chemical vapor deposition.

45. Activation characteristics and defect structure in Si-implanted GaAs-on-Si.

46. Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy.

47. Hydrogen in carbon-doped GaAs grown by metalorganic molecular beam epitaxy.

48. Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane.

49. Enhanced hot-electron photoluminescence from heavily carbon-doped GaAs.

50. Bias-controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser.

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