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Focuses on a study that reported the evolution with increasing layer thickness of the structural and electrical properties of gallium arsenide grown directly on silicon of silicon-on insulator by metalorganic chemical vapor deposition. Details of the experiment; Results; Discussion.

Studies the characterization of gallium arsenide layers grown directly on silicon substrates by metalorganic chemical vapor deposition. Advantages of the heteroepitaxial growth of gallium arsenide on silicon substrates; Details on the experiment; Discussion on the results of the study.

Presents a study that investigated the uniformity of activation of silicon-, beryllium- and magnesium-implanted semi-insulating gallium arsenide substrates after rapid thermal annealing in a commercial furnace. Carrier lifetimes for low-dose implants; Mobilities for low-dose implants; Temperature dependence of damage removal and carrier activation in the implanted regions.

Presents a study which neutralized the shallow-donor levels due to silicon, germanium, tin, sulphur, selenium and tellurium in gallium arsenide in association with atomic hydrogen. Hydrogenation from a plasma source; Reduction of native oxide during hydrogen plasma exposure; Donor-specific effects of hydrogen plasma exposure.

Deals with a study of transient thermal processing of S-doped epitaxial gallium arsenide wafers, both with and without ion-implantation damage being present. Experimental details; Results and discussion.

Presents a study which examined defects and ion redistribution in implant-isolated gallium arsenide based device structures. Technique for isolating elementary gallium arsenide-based devices; Concerns about post-implant anneal needed to achieve maximum resistivity in heterojunction bipolar transistor (HBT) structures; Layer structure of gallium arsenide/AlGaAs grown by metal organic molecular beam epitaxy.

Reports on the implant isolation characteristics of highly doped n- and p-type gallium arsenide (GaAs) epitaxial layers implanted with 5 MeV O[sup+] ions. Layer structures used for MeV isolation experiments; Evolution of the sheet resistance of initially p[sup+] GaAs single epitaxial layers implanted with the ions at different doses; Measurement of the temperature dependence of the sheet carrier densities.

Investigates the isolation properties and experimental ranges of high energy ions in gallium arsenide (GaAs) and indium phosphide (InP). Layer formation in epitaxial GaAs; Use of secondary-ion mass spectrometry to measure the depth profiles of silicon ions implanted into GaAs and InP; Sheet resistance of the GaAs epitaxial layers.

Describes the simultaneous formation of buried external collector and extrinsic base regions in gallium arsenide/AlGaAs heterojunction bipolar transistor (HBT) structures by co-implantation of beryllium+ together with oxygen+ or hydrogen+ ions. Effect of high annealing temperature on beryllium (Be) activation; Reduction of the base-collector capacitance and the associated changes in parasitic resistances; Redistribution of the Be and the residual disorder in the HBT structure.

Examines near-surface damage created by argon ion milling in indium phosphide and gallium arsenide. Application of capacitance-voltage, photoluminescence and transmission electron microscopy; Electrical characteristics of both InP and GaAs after ion milling; Surface morphologies of the ion milled materials.

Focuses on a study which examined the etch rate, surface morphology and atomic composition, and depth of hydrogen passivation of silicon dopants in n-type gallium arsenide and aluminum gallium arsenide. Disccusion on dry etching of gallium arsenide; Methodology of the study; Results and discussion.

Deals with a study which investigated the etch rates of gallium arsenide and aluminum gallium arsenide. Discussion on reactive ion etching; Methodology of the study; Results and discussion.

Analyzes changes in the near-surface electrical properties of n-type gallium arsenide (GaAs) and AlGaAs after reactive ion etching in either C[sub2]H[sub6]/H[sub2]/Ar or CCl[sub2]F[sub2]/O[sub2] discharges. Role of the dry etching of GaAs-AlGaAs heterostructure devices; Application of current-voltage and capacitance-voltage measurements on Schottky diodes; Results of the annealing process on GaAs and AlGaAs.

Investigates the relationship between electrical activity, dopant solubility and diffusivity as a function of the substrate temperature during the implantation of tellurium, cadmium and tin ions into gallium arsenide. Uses of ion implantations into gallium arsenide; Way to obtain the solubility of the implanted dopants; Analysis of the degree of electrical activity of the species after annealing.

Investigates the thickness dependence of material quality of InP-GaAs-Si structures grown by atmospheric pressure metalorganic chemical vapor deposition. Variation in indium phosphide thickness; Growth sequence employed; Measurement of the doping density in indium phosphide.

Focuses on a study that investigated the reactive ion etching of gallium arsenide with a CCI[sub2]F[sub2]O[sub2] discharge as a function of gas flow rate, total pressure, power density, gas composition and etch time. Situation where the etch rate decreases; Factor detected by both ion channeling and electron microscopy; Cause of the dry etching of gallium arsenide.

Presents a study that introduced atomic hydrogen by two methods into gallium arsenide (GaAs) layers epitaxially grown on silicon substrates. Correlation of the amount of hydrogen incorporated during plasma exposures with the amount of initial disorder in the GaAs layer; Use of current-voltage measurements in titanium-platinum-gold Schottky diode structures; Effects of the defects in the GaAs layer.

Presents a study that investigated the ion implantation tailoring of electrically active dopant profiles gallium arsenide. Details of the experiment; Results and discussion.

Presents a study which investigated the effects of hydrogenation on the photoluminescence properties of gallium arsenide grown on indium phosphide substrate by metalorganic chemical vapor deposition. Analysis of the emission band originating from the interficial region; Reason for the improvement of the intensity of the emission band; Results of the annealing of the hydrogenated sample.

Evaluates the quality of the n-type layers that were produced through the implantations of silicon and silicon fluoride ions into semi-insulating gallium arsenide (GaAs) wafers. Effect of transient annealing of shallow silicon implantations on axial and lateral diffusion; Application of a scanning electron microscope with cathodoluminescence capability; Free carrier distribution obtained for GaAs wafers subjected to furnace or rapid thermal annealing cycles for implant activation.

Presents a study which observed the distinct antiphase domain structures in gallium arsenide epitaxial layers grown on a silicon/SiO[sub2]/silicon-substrate structure by metalorganic vapor deposition. Details on the experiment; Results of the study; Conclusions.

Presents a study which examined donor activation efficiency and implant uniformity for wafers from gallium arsenide crystals prepared by a variety of growth methods. Experimental details; Results and discussion; Conclusion.

Investigates the near-band-edge photoluminescence from semi-insulating gallium arsenide crystals after they were annealed either in the wafer form or in the bulk form. Evidence which questions the involvement of V[subAS] in the band; Diffusion coefficient of V[subAS]; Conclusion.

Focuses on a study which investigated the use of tri-isobutylgallium (TIBG) and tri-isopropylgallium (TIPG) for growth of InGaP on gallium-arsenium by metalorganic molecular beam epitaxy. Experimental methods used; Results of the study; Conclusions.

Presents the structural aspects and annealing behavior of induced damage by gallium (Ga) ion implantation of a Ga arsenide single quantum well as investigated by transmission electron microscopy. Detection of vacancy and interstitial perfect dislocation loops in planes; Types of planes; Recovery of the cathodoluminiscence intensity of the implanted quantum after annealing.

Presents a study which investigated the electrical activation of implanted beryllium, magnesium, zinc, and cadmium in gallium arsenide (GaAS) by rapid thermal annealing (RTA). Details of experimental techniques used; Overview of previous reports on RTA activation of implants in GaAs.

Presents a study which shown repaid thermal annealing of gallium arsenide with an enclosed, SiC-coated graphic susceptor to eliminate slip formation during implant activation treatments and to provide much better protection against surface degradation at the edges of wafers compared to more conventional proximity method. Comparison of the surface protection capabilities of the method with conventional proximity annealing; Experimental procedures; Results and discussion; Conclusion.

Reliability studies of InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) grown on GaAs substrates for high frequency/power applications are reported. The MHEMTs were stressed at a drain voltage of 3 V for 36 h, as well as undergoing a thermal storage test at 250 °C for 48 h. The drain current density of the MHEMTs at zero gate bias dropped about 12.5% after either the thermal storage experiment or dc stress. The gate current of the MHEMT devices with thermal storage was much higher than that of devices after dc stress. In the latter case, significant gate sinking was observed by transmission electron microscopy. The main degradation mechanism during thermal storage was the reaction of the Ohmic contact with the underlying semiconductor. [ABSTRACT FROM AUTHOR]

A parametric study of the etch characteristics of Ga-based (GaAs, GaSb, and AlGaAs) and In-based (InGaP, InP, InAs, and InGaAsP) compound semiconductors in BCl3/Ar planar inductively coupled plasmas (ICPs) was performed. The Ga-based materials etched at significantly higher rates, as expected from the higher volatilities of the As, Ga, and Al trichloride, etch products relative to InCl3. The ratio of BCl3 to Ar proved critical in determining the anisotropy of the etching for GaAs and AlGaAS, through its effect on sidewall passivation. The etched features in In-based materials tended to have sloped sidewalk and much rougher surfaces than for GaAs and A1GaAs. The etched surfaces of both AlGaAs and GaAs have comparable root-mean-square (RMS) roughness and similar stoichiometry to their unetched control samples, while the surfaces of In-based materials are degraded by the etching. The practical effect of the Ar addition is found to be the ability to operate the ICP source over a broader range of pressures and to still maintain acceptable etch rates. [ABSTRACT FROM AUTHOR]

Presents information on a study which demonstrated a high performance gallium arsenide metal-semiconductor field-effect transistor using carbon as the p-dopant. Methods; Results; Discussion.

Nitridization of GaAs surfaces by exposure to a nitrogen or nitrogen-hydrogen plasma is known to form a surface coating rich in GaN. We show that pretreatment in a hydrogen plasma at room temperature followed by production of this wider band-gap material by nitrogen plasma treatment at 500 °C for 5 h reduces the reverse leakage current of Au-GaAs (ND-NA =5×1017 cm-3) Schottky diodes by typically an order of magnitude at 300 K. [ABSTRACT FROM AUTHOR]

Incorporation of atomic hydrogen into heteroepitaxial Si-doped GaAs layers grown directly on InP substrates by organometallic vapor phase epitaxy produces substantial increases in the reverse bias breakdown voltage of TiPtAu Schottky diodes fabricated on the GaAs-on-InP. Plasma hydrogenated diodes annealed at 400 °C to restore the electrical activity of the passivated shallow donors have reverse breakdown voltages (VB) of ∼6.5 V compared to 4.5 V for untreated samples. The increases in VB are stable to 500 °C annealing for 5 min. Atomic profiling of deuterated samples showed substantial outdiffusion of deuterium from the GaAs at 600 °C, with increasing accumulation at the heterointerface. The deuterium in this disordered region after 600 °C annealing is in a relatively immobile, electrically inactive state. [ABSTRACT FROM AUTHOR]

Hole concentrations in excess of 1020 cm-3 have been achieved in AlxGa1-xAs using carbon doping during metalorganic molecular beam epitaxy. Hall and secondary-ion mass spectrometry measurements show a 1:1 correspondence between the hole density and carbon concentration in as-grown samples, although post-growth annealing at 900 °C leads to a reduction in the net free-carrier concentration (typically a decrease of ∼40% for 30 s anneals). The carbon-localized vibrational modes (LVMs) show fine structure due to the presence of three different symmetries for substitutional carbon CAs, namely Td, C2v, and C3v. The experimental CAs LVM line positions are in remarkable agreement with the predictions of a rigid ion model. [ABSTRACT FROM AUTHOR]

Transport of the acceptor-passivating hydrogen species in p-type GaAs has been observed in reverse bias annealed Al Schottky diode samples. The motion of the positively charged hydrogen across the depletion region of these diodes is confirmed both by changes in the electrically active acceptor profiles with time, and by direct measurement of the migration using secondary-ion mass spectrometry on deuterated samples. Acceptor passivation is unstable under minority-carrier injection by illumination at 25 °C. Hydrogen injection into p-type GaAs during boiling in water or etching in H2SO4:H2O2:H2O has also been demonstrated. [ABSTRACT FROM AUTHOR]

The redistribution of Zn in the base region of GaAs-AlGaAs heterojunction bipolar transistor structures during growth by organometallic vapor phase epitaxy has been examined with respect to the presence of Si doping in the emitter-contact, emitter, and collector/subcollector layers, and as a function of Zn doping concentration and Si counterdoping level in the p+ base. For a growth temperature of 675 °C the Zn shows no significant redistribution up to concentrations of 3×1019 cm-3 without Si doping. The addition of Si to the adjacent AlGaAs emitter and collector/subcollector layers causes substantial diffusion of Zn from the base, while Si doping of the GaAs emitter contact results in even greater Zn redistribution. Under these conditions, the Zn concentration in the base attains a maximum value of ∼7×1018 cm-3. Silicon counterdoping in the base region retards the Zn diffusion, while strain introduced by an InGaAs cap layer has no effect on the Zn redistribution. [ABSTRACT FROM AUTHOR]

It is shown for the first time that carbon behaves predominantly as an acceptor in InGaAs and AlInAs under co-implantation conditions. The co-implanted ion, regardless of species, acts to create vacant lattice sites for occupation by the carbon. Implantation of 40 keV carbon ions alone at doses between 5×1012 and 5×1014 cm-2 followed by annealing in the range 600–950 °C for 10 s does not produce any measurable electrical activity in either material. In InGaAs, carbon implantation at 5×1014 cm-2 produced net acceptor activations of 20, 11, or 6% for Ga, Ar, or As co-implantation, respectively, at the same doses after 700 °C, 10 s anneals. Similar results were obtained for AlInAs after annealing at 900 °C. The diffusion coefficient for carbon is estimated from secondary-ion mass spectrometry measurements to be less than 3.3×10-14 cm2 s-1 at 800 °C in both materials. [ABSTRACT FROM AUTHOR]

The formation of high-resistivity (>107Ω/[Laplacian_variant]) regions in GaAs-AlGaAs heterojunction bipolar transistor (HBT) structures by oxygen and hydrogen ion implantation has been investigated as a function of ion dose and subsequent annealing temperature (400–700 °C). Isolation leakage currents as low as 8 μA mm-1 at 6 V can be achieved between 100-μm-wide ohmic contacts separated by a 16 μm spacing. The isolation of these 1.8-μm-thick heterojunctions requires up to six different energy oxygen implants (40–400 keV) and three different energy proton implants (100–200 keV) with doses in the mid 1012 cm-2 range for O+ and 5×1014 cm-2 for H+ ions. Similar results can be achieved by substituting a MeV energy oxygen implant for the proton implants. The optimum post-implant annealing temperature depends on the ion dose but is in the range 500–600 °C. The evolution of the sheet resistance of the implanted GaAs-AlGaAs material with annealing is consistent with a reduction in tunneling probabilities of trapped carriers between deep level states for temperatures up to ∼600 °C, followed by significant annealing of these deep levels. Small geometry (2×9 μm2) HBTs exhibiting current gain of 44 and cutoff frequency fT as high as 45 GHz are demonstrated using implant isolation. [ABSTRACT FROM AUTHOR]

Recent advances in heterostructure bipolar transistor technology have created a need for p-type doping at levels ≥1020 cm-3. Furthermore, such levels may eliminate the need for alloying during ohmic contact formation. We have achieved p-type doping levels as high as 5×1020 cm-3 using an unconventional dopant, C, derived from the gaseous source chemical, trimethylgallium (TMG), during metalorganic molecular beam epitaxial (MOMBE) growth of GaAs. We have controllably achieved doping levels between 1019 and 5×1020 cm-3 by diluting the TMG flow with another metalorganic, triethylgallium (TEG). By utilizing the so-called δ-doping or atomic planar doping method we have also been able to grow C-doped spikes with hole concentrations as high as 7×1019 cm-3, with a full width at half maximum of ∼50 Å at 300 K. This doping level is the highest yet reported for planar doping, and the narrow width indicates that the C atoms are restricted to one or two atomic planes. By switching out the TMG, and switching in the TEG to continue the growth of C-free GaAs we have grown sandwich-type structures with C levels of 1020 cm-3, which fall off within 210 Å to C levels of <1017 cm-3. High-temperature annealing of such structures reveals a C diffusion coefficient of ≤10-16 cm2 s-1 at 950 °C, in agreement with other reports. This is at least three orders of magnitude less than for the other conventional p-type dopants, Be and Zn. Finally, we report the presence of strain in the highly C-doped layers, detected by x-ray diffraction. The lattice constant obtained corresponds roughly to that calculated by assuming a Vegard’s law mixture of GaAs and 0.7% GaC. This distortion of the GaAs lattice has not been previously measured. [ABSTRACT FROM AUTHOR]

Zinc delta-doped layers have been grown by atmospheric pressure organometallic vapor phase epitaxy. Secondary-ion mass spectroscopy and electrochemical capacitance-voltage profiling were used to measure the spatial distribution of the Zn for both as-grown and annealed samples. The narrowest atomic profiles had full width at half maxima of 70 Å for peak Zn concentrations of ≤3×1018 cm-3. The as-grown width of these profiles is attributed to a combination of dopant memory effect and growth-related diffusion during the actual formation of the delta-doped layer. An effective diffusion coefficient D of ≤7×10-17 cm2/s is estimated for a growth temperature of 625 °C. Rapid thermal annealing at 900 °C for 5 s of several samples grown under various conditions led to calculated values of D in the range 0.5–1.0×10-12 cm2/s. [ABSTRACT FROM AUTHOR]

The growth of thin (50–100 Å), C or Zn δ-doped layers on n-type GaAs is shown to yield large enhancements in the effective Schottky barrier height ([uppercase_phi_synonym]B) of TiPtAu contacts subsequently deposited on the material. The incorporation of a single C δ-doped layer (p=1.5×1020 cm-3, 50 Å wide) within 100 Å of the surface leads to a barrier height of 0.93 eV, a significant increase over the value for a control sample (0.76 eV). The use of two sequential δ-doped layers leads to an apparent barrier height in excess of the GaAs band gap ([uppercase_phi_synonym]B=1.67 eV). This appears to be consistent with the predictions of a unified defect model. Zinc δ doping (p∼3×1018 cm-3) in a similar fashion produces barrier heights of 0.81 eV for one spike and 0.95 eV for two spikes. [ABSTRACT FROM AUTHOR]

Carbon was implanted into GaAs at doses between 1013 and 5×1014 cm-2, either by itself or with Ga coimplantation at room temperature or 200 °C. Activation percentages as high as 40% were obtained for C+Ga implants at 5×1014 cm-2 compared to <3% for C implantation only. The peak activation occurs for an annealing temperature of 800 °C for 10 s, while above this the net activation decreases, apparently due to site switching. The C shows fairly minimal redistribution during anneals up to 1000 °C in contrast to other acceptor dopants in GaAs. The formation of highly resistive (>106 Ω/[Laplacian_variant]) layers in C-doped (p∼2×1020 cm-3) GaAs is possible by using oxygen bombardment doses above 5×1014 cm-2. Under these conditions the evolution of the implanted layer resistivity with annealing temperature can be described by the usual trap-related compensation mechanism. [ABSTRACT FROM AUTHOR]

The electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2H5)3 source during organometallic vapor phase epitaxy were examined. The vanadium concentration in the GaAs was controllably varied from 1016 to 1018 atoms cm-3. Deep level transient spectroscopy showed the presence of an electron trap at Ec-0.15 eV which increased in concentration with vanadium content of the epitaxial layers. A maximum value of 8×1015 cm-3 for this trap was obtained. There were no midgap electron traps associated with vanadium. In intentionally Si-doped epitaxial layers, co-doping with vanadium was observed to have no effect in reducing the carrier density when the Si concentration was ≥4×1016 cm-3. The net carrier concentration profiles resulting from 29Si implantation into GaAs containing 1018 cm-3 of total V had sharper tails than for similar implantation into undoped material, indicating the presence of less than 1016 cm-3 V-related acceptors. Photoluminescent spectra exhibited the characteristic V+3 intracenter emission at 0.65–0.75 eV. No other deep level photoluminescence was detected. For a V concentration of 1016 cm-3 only 2.5×1013 cm-3 was electrically active. Over the entire V concentration investigated this impurity was predominantly (≥99%) inactive. [ABSTRACT FROM AUTHOR]

Epitaxial GaAs layers were grown by metalorganic chemical vapor deposition on Si-on-insulator structures formed by high dose oxygen implantation. The quality of the GaAs films was examined as a function of layer thickness (0.01–4 μm). The surface morphology, ion backscattering yield, x-ray diffraction peak width, and Si implant activation efficiency all improve substantially with GaAs thickness. At a film thickness of 4 μm many of these properties are comparable to bulk GaAs, but some cracking of the epitaxial film is evident. Cross-sectional transmission electron microscopy reveals an average defect density of ∼108 cm-2 in the GaAs layer, which is similar to the density in GaAs films grown directly on Si. [ABSTRACT FROM AUTHOR]

The stability of the electrical and structural properties of GaAs directly deposited on Si by metalorganic chemical vapor deposition is examined. Extended annealing at 900 °C leads to substantial diffusion of Si across the heterointerface while under the same conditions there is no significant motion of Si incorporated as a dopant into the GaAs surface region. The degree of enhancement of Si diffusion ranges from a factor of ∼250 for 0.5-μm-thick GaAs films to ∼5 for 4-μm-thick films. The annealing time and GaAs layer thickness dependence of Si diffusivity near the interface is consistent with a defect-modulated mechanism. A large fraction of this mobile Si is electrically inactive. [ABSTRACT FROM AUTHOR]

Undoped metalorganic chemical vapor deposited GaAs layers on Si substrates were implanted with 29Si ions (5×1012 cm-2 dose at 100 keV energy) to form a shallow n-type region. The net donor activation (74%) and electron mobility (3014 cm2 V-1 s-1) after rapid thermal annealing (900 °C, 10 s) were compared to those obtained for similar implants into bulk GaAs. There was a slight improvement in the proton backscattering yield from the GaAs-Si interface region after the annealing cycle, consistent with cross-sectional transmission electron microscopy data showing an alignment of defects in annealed samples. [ABSTRACT FROM AUTHOR]

Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy is studied. Just as in uniformily Si-doped GaAs, exposure of the δ-doped material to a low frequency (30 kHz) hydrogen plasma at 250 °C for 30 min deactivates the Si donors in the δ spikes. For samples with Si doping of (1–6)×1018 cm-3, carrier concentration in the spikes decreased by nearly three orders of magnitude following hydrogenation. Secondary-ion mass spectrometric analysis of deuterated samples confirmed trapping of deuterium in the Si-doped spikes. Consistent with the deactivation of Si donors following hydrogenation, changes were observed in the near-band edge luminescence spectrum at 4.2 K, which showed in the hydrogenated sample the absence of Burstein–Moss shift that was observed in the as-grown sample. This hydrogen-induced passivation of Si donors in the δ spikes can be of benefit in selectively deactivating donor atoms in device applications, and also provide a method for tailoring the hydrogen distribution in an epitaxial structure. [ABSTRACT FROM AUTHOR]

Atomic profiles show that hydrogen is incorporated in GaAs:C that has been grown by metalorganic molecular beam epitaxy. The hydrogen concentration has been found to be about 5% of the carbon concentration for our growth conditions. An infrared absorption study shows that this hydrogen is involved in stable C-H complexes. At the lower C concentrations (<1019 cm-3) the CAs-H complex is the dominant species involving C and H. At higher C concentrations new complexes involving C and H appear. [ABSTRACT FROM AUTHOR]

AlGaAs grown by metalorganic molecular beam epitaxy (MOMBE) has been problematic due to oxygen and carbon contamination, particularly when triethylaluminum (TEAl) has been used as the aluminum source. Consequently, we have investigated trimethylamine alane (TMAAl) as a potential replacement for the conventional metalorganic Al sources. AlGaAs films with excellent structural and optical properties have been grown with this source. Photoluminescence intensities from AlGaAs grown by MOMBE at 500 °C using TMAAl are comparable to those from material grown by metalorganic chemical vapor deposition at 675 °C using triethylaluminum (TMAl). Carbon and oxygen levels in MOMBE-grown AlGaAs are drastically reduced in comparison to similar films grown with TEAl. [ABSTRACT FROM AUTHOR]

An enhancement of hot-electron photoluminescence due to degenerate conditions in the valence band has been observed in metalorganic molecular beam epitaxial grown GaAs:C with net acceptor concentration of up to 4×1020 cm-3. The photoluminescence (PL) was studied as a function of free-carrier concentration and sample temperature. Comparison of the PL spectra from the heavily doped GaAs to that of undoped material shows a peak shift to lower energy coupled with a greatly enhanced high-energy tail extending into the visible region of the spectrum. At 300 K, luminescence at 1.8 eV is observed at 20% the intensity of the peak luminescence at 1.36 eV. [ABSTRACT FROM AUTHOR]

The light emission characteristic of a GaAs/AlGaAs single quantum well laser with an intracavity monolithic loss modulator has been investigated. Discrete, widely separated, wavelength switching from the first (875 nm) to the second (842 nm) subband is achieved by changing the applied modulator bias. In addition, we show that 2 mW of lasing light power may be modulated with a change in current of 250 μA and a voltage change of 1 V. [ABSTRACT FROM AUTHOR]