208 results on '"Meneghesso, Gaudenzio"'
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2. Reliability of GaN-Based Power Devices
3. GaN-based power devices: Physics, reliability, and perspectives.
4. Performance and Degradation of Commercial Ultraviolet‐C Light‐Emitting Diodes for Disinfection Purposes.
5. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results.
6. Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode.
7. Defects and Reliability of GaN‐Based LEDs: Review and Perspectives.
8. Trap-state mapping to model GaN transistors dynamic performance.
9. Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer.
10. Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs.
11. “Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs.
12. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors.
13. Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon.
14. Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction.
15. GaN Vertical p–i–n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation.
16. Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures.
17. Breakdown Walkout in Polarization-Doped Vertical GaN Diodes.
18. A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes.
19. Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors.
20. Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors.
21. Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs.
22. Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors.
23. Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs
24. Ron Collapse, Breakdown and Degradation of d-mode MIS-HEMTs Based on GaN on Si Technology
25. Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications
26. 'Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs' in III-Nitride Based Light Emitting Diodes and Applications
27. Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices
28. GaN HEMTs Devices: opportunities, challenges and issues
29. Reliability of AlGaN/GaN High Electron Mobility Transistors:a literature survey
30. Breakdown and high field related effects in GaN power HEMTs
31. GaN Technology Enabling Green Energy: Opportunities and Challenges
32. Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs.
33. Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs.
34. Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications.
35. GaN-Based Laser Wireless Power Transfer System.
36. Laser-Based Lighting: Experimental Analysis and Perspectives.
37. Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions
38. Evidence for breakdown luminescence in AlGaN/GaN HEMTs
39. Random Telegraph Noise And Bursts In Reverse-Bias-Stressed AlGaN/Gan HEMTs
40. Mg diffusion and dislocation modifications during high-temperature annealing of InGaN-based LEDs
41. Degradation of AlGaN/GaN HEMTs below the 'critical voltage': a time-dependent analysis
42. Pre-breakdown current fluctuations and RTS noise in reverse-bias-stressed AlGaN/GaN HEMTs
43. Electrical, spectral and thermal analysis of yellow luminescent dots in InGaN green LEDs
44. Study of Time-Dependent Degradation of Reverse Biased AlGaN/GaN HEMTs
45. Trapping and High Electric Field Parasitic and Degradation phenomena in AlGaN/GaN power HEMTs
46. Time dependent Degradation of AlGaN/GaN HEMTs
47. Characterization Of Gan-Based Single- And Double-Heterostructure Devices
48. Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells
49. Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis
50. High Electric Field related Parasitic and Degradation phenomena in AlGaN/GaN power HEMTs
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