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We report on rapid thermal chemical vapor deposition growth of silicon nanowires (Si NWs) that contain a high density of gold nanoclusters (Au NCs) with a uniform coverage over the entire length of the nanowire sidewalls. The Au NC-coated Si NWs with an antibody-coated surface obtain the unique capability to capture breast cancer cells at twice the highest efficiency currently achievable (~88% at 40 min cell incubation time) from a nanostructured substrate. We also found that irradiation of breast cancer cells captured on Au NC-coated Si NWs with a near-infrared light resulted in a high mortality rate of these cancer cells, raising a fine prospect for simultaneous capture and plasmonic photothermal therapy for circulating tumor cells., (© 2012 American Chemical Society)

Presents a study that investigated the deep levels and electrical properties in silicon and beryllium-coimplanted semi-insulating gallium arsenide. Experimental procedures; Results; Discussion.

Details a study which investigated the passivation and dissociation process of hydrogen-silicon donor complex in plasma-hydrogenated gallium arsenide. Temperature dependent values of dissociation frequencies; Results of the electric field annealing experiment; Dissociation kinetics of the hydrogen-donor complex.

Discusses a study which investigated hydrogenation effects on silicon- and beryllium-ion-implanted GaAs exposed to the hydrogen plasma. Change in electron mobilities that occurred in the sample hydrogenated for 60 minutes at room temperature; Factor responsible for defect and impurity passivation in crystalline semiconductor materials; Reasons for not utilizing atomic hydrogen processing.

We have fabricated Si nanocrystals utilizing nanometer-sized Pt islands acting as etching-masks on SiOx/amorphous-Si/SiOx/p-Si (1 0 0) thin films. In the measurement of transmission electron microscopy the Si nanocrystals embedded in SiO2 were observed, and in the measurement of cathodoluminescence spectroscopy at 77 K Si nanocrystal-related peaks were observed at 462 and 647 nm. For the Al/SiO2/nanocrystalline-Si/SiO2/p-Si capacitor structure, a hysteretic behavior with the flatband voltage shift of 0.592 V was observed in the measurement of capacitance–voltage characteristic at 300 K. These results indicate that Si nanocrystals can be formed by using a nanosized Pt island etching-mask, and that Si nanocrystals embedded in SiO2 layer act as Si quantum dots which hold promise potential applications. [Copyright &y& Elsevier]