149 results on '"Amblard, Gilles R."'
Search Results
52. Ultra-high carbon fullerene-based spin-on-carbon hardmasks
53. Thin underlayer materials for metal oxide resist patterning
54. Chemical trimming overcoat: an advanced spin-on process for photoresist enhancement in EUV lithography
55. Electron beam and optical patterning of polymerizable ionic liquid-based resists
56. Fundamental studies of interactions between polymer substrate and precursor in sequential infiltration synthesis
57. Towards molecular-scale kinetic Monte Carlo simulation of pattern formation in photoresist materials for EUV nanolithography
58. Metallic contamination reduction in polymer solution using membrane purification technology
59. Novel UPE filtration technology for advanced photolithography materials
60. Molecular layer deposition of an Al-based hybrid resist for electron-beam and EUV lithography
61. Fundamentals of EUV stack for improving patterning performance
62. Role of counter-anion chemistry, free volume, and reaction byproducts in chemically amplified resists
63. Metal purifier for TMAH developer solution
64. Mean free path of electrons in EUV photoresist in the energy range 20 to 450 eV
65. Modification of organic underlayers by plasma during dry etching and its effect on the film properties
66. Novel assist layers to enhance EUV lithography performance of photoresists on different substrates
67. Development of a novel cleaner for contaminant removal in equipment used in semiconductor manufacturing which reduces time and solvent waste
68. Recent advances in EUV patterning in preparation towards high-NA EUV
69. A scientific framework for establishing ultrafast molecular dynamic research in imec’s AttoLab
70. Photoresists with precisely controlled molecular weight, composition, and sequence
71. Effects of photoacid generator decomposition on dissolution kinetics of poly(4-hydroxystyrene) in tetraalkylammonium hydroxide aqueous solutions
72. Influence of the anion in tin-based EUV photoresists properties
73. Establishment of new process technology for EUV lithography
74. New functional surface treatment process and primers for high-NA EUV lithography
75. A novel formulated developer for negative-tone imaging with EUV exposure to improve chemical stochastic
76. Scaled-down deposited underlayers for EUV lithography
77. Positive tone i-line photoresist with controlled undercut profile for advanced packaging
78. Profile control in conductor metal wet etch with advanced photoresists
79. Continued optimization of point-of-use filtration for metal oxide photoresists to reduce defect density
80. The novel materials for pattern growing on EUV resists
81. EUV-induced activation mechanism of photoacid generators: key factors affecting EUV sensitivity
82. Enhancing the sensitivity of a high resolution negative-tone metal organic photoresist for extreme ultra violet lithography
83. Next generation ultra clean nylon filter for on-wafer defects reduction enhancement
84. Characterization of nylon membranes for nano-particle filtration
85. High- and low-refractive-index materials with high transmission for next-generation optical devices
86. Application of higher absorption materials to the underlayer of EUV lithography
87. Filter start-up study on HDPE membrane point-of-use filter for lithography application
88. Wet etch process for high-resolution DSA patterning for advanced node DRAM
89. Enhancing process stability and defect control in advanced EUV lithography via innovative track systems
90. Biomass developer made from plants for lithography processes
91. Non-PFAS biomass EUV resist for sustainable semiconductor manufacturing
92. Machine, process, and material efforts towards sustainable lithography
93. Enhancement of sensitivity and resolution by functional surface treatment process and primers (FSTP)
94. Lithography performance improvement of MOR by underlayers
95. Novel spin-on overcoat materials for EUV photoresist enhancement
96. Spin-on metal-oxide underlayer for EUV patterning
97. Functional underlayers, surface priming, and multilayer stacks to improve dose and adhesion of EUV photoresists
98. Organic dry development rinse (O-DDR) process for spin-on MOR to prevent pattern collapse
99. Controlling chemical segregation in EUV resists by varying viscosity and evaporation rate during the spin coating process
100. EUV metal oxide resists: impact of the environment composition on CD during post-exposure delay
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