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The new self-aligned pocket implantation (SPI) method modifies the MOSFET systems with reduced parasitic junction capacity, thus generating a high-speed circuit activity. The self-aligned gate electrode and TiSi2 film masks embody a local pocket, which is the main characteristic of the SPI system. Reducing the micrometer value to 0.21 micrometer and increasing the drain saturation current of 10% and 20% in N-MOSFET and P-MOSFET are some functions of the SPI system. The SPI MOSFET differs from the LDD MOSFET by reducing the drain junction capacitance in N- and P-MOSFETs. The period of delay of 50 ps and 40 ps in every stage of dual-gate CMOS ring oscillator is effected due to the high current driving efficiency and the low drain junction capacitance.

Computational origami is an algorithm by which one can reshape another algorithm. This reshaping permits various time - hardware trade-offs to be explored. An algorithm is first rearranged as feed forward with constant fan-in and fan-out. It is then regularized into certain predetermined geometries that break the lateral data dependencies. The result is then folded with the help of delay lines. This time - hardware trade-off technique is also applicable to the scheduling of multiple-instruction multiple-data parallel processors and bit serial VLSI designs.

A simple design philosophy is described that is based on the principles of bipolar electrochemistry for the operation of microelectrochemical integrated circuits. Individual microelectrochemical logic gates are described and multiple logic gates are integrated into a single microfluidic channel to produce an integrated circuit that can perform parallel logic functions.

The formation, structure and the properties of the different metal-oxide-semiconductor capacitors and n-channel metal-oxide-semiconductor field-effect transistors with [La.sub.2][O.sub.3] gate dielectric are discussed. The degradation of the threshold voltage is shown to exhibit a significant exponential dependence on the stress time of the system.

The article presents a new approach, which employs an in situ thin metal layer interposed between the gate dielectric and metal gate for controlling the work-functions, as well as the scaling equivalent oxide thickness (EOT) of the different metal-oxide-semiconductor devices. The EOT of the system is shown to highly reduce with an increase in the thickness of the metal layers.

Single-electron turnstile operation in common-gated one-dimensional arrays of four tunnel junctions having inhomogeneous junction capacitances is analyzed. Postfabrication control of capacitance dispersion in multijunction FETs is achieved, which has resulted in successful turnstile operation.

The synthesis and properties of the all-amorphous, optically transparent and mechanically flexible thin-film transistors (TF-TFTs) are discussed. The approach used for the formation of various bilayers gate dielectrics is also presented.

The article presents a new methodology, which uses the [1.sup]H relaxation dispersion phenomenon for the quantification of the [13.sup]CH[D.sub.2] methyl group probes of millisecond time scale exchange in proteins. The application of the technique for the analysis of proteasome gating residue dynamics is also discussed.

The electron transport through a quantum Hall Fabry-Perot interferometer (QHFPI) obtained with two quantum point contacts (QPCs) in series along a ballistic quantum wire is discussed by focusing on the effects due to quantum interference and to quantum Hall effect. The studies have shown that by changing the parameters, a XOR gate is produced, where a high output current (1) has appeared, when just one of the two inputs is low (0), while a low output current (0) has resulted if both inputs are low (0), or high (1).

The application of protic ionic liquid (PIL) such as the gate dielectric for ZnO EDL transistors (EDLTs) and the small and chemically active ions, such as protons and hydroxyls as an adsorption medium to extend the interfacial functionalities of EDLTs is demonstrated. The finding from the study provides new pathways to understand liquid/solid heterogeneous interface phenomena and to extend the practical functions of EDLs through controllable interfacial interaction.

The microscopic treatment of edge magnetoplasmons (EMPs) are described for the not-too-low temperatures in the quantum Hall effect regime. Renormalization of all the EMPs coming from metal gate and air half-space is analyzed.

The lanthanum oxide ([La.sub.2][O.sub.3]) was inserted into hafnium oxide (Hf[O.sub.2]) gate dielectrics to study the flat band voltage ([V.sub.FB]) modulation. The results indicated that the main mechanism of [V.sub.FB] modulation using [La.sub.2][O.sub.3] layer is dipole moment formation at an interfacial layer between high k gate dielectric and Si substrate.

The geometrical aspects are analyzed for the functionality of a molecule-based field effect transistor (FET). Transport gating of the FET has depended on a symmetry-breaking effect induced by the gating field, which is also related to the orientation of the field relative to the gold-thiol bonds, the molecular conjugation plane and the overall symmetry of the device.

A surface-potential-based drain current model for thin-film transistors (TFTs) which are able to account for the influence of traps located at the gate-oxide/silicon interface to reproduce the gradual increase in the subthreshold current. The calculation results produced by the model are in good agreement with the measured current-voltage characteristics of polycrystalline silicon TFTs with large grains.

A physical-vapor-deposition (PVD)-based in situ method is employed to incorporate lanthanum (La) into Hf-silicate high-permittivity (high-k) gate dielectrics. The effective work function modulation due to La incorporation is attributed to the interface dipole at the bottom high-k/Si[O.sub.2] interface, which is significantly influenced by the La content at the interface.

A study was conducted to examine the interdependence between the thermodynamics ([Delta]G degree) and the kinetics ([Delta][G.sub.in] and [Delta][G.sub.out]) of encapsulation as mediated by gated molecular basket. The basket discriminated guests on the basis of their size/shape via dynamic modulation of the binding site's access when the potential ([Delta]G degree) was fixed.

Several models are developed that have allowed a direct comparison between the single-gate, double-gate and gate-all-around configuration at high drain voltage, when the drain-voltage dependence is negligible. The studies have shown that scaling the gate-dielectric thickness has improved the tunnel field-effect transistor (TFET) performance more than scaling the channel thickness.

The hysteresis is studied in threshold voltage shift during alternating gate bias ramps after negative bias temperature stress and the results are compared with charge pumping measurements. The studies have shown that the carrier trapping and detrapping characteristics of stress induced defects are controlled by temperature and electric field, but irrevocable structural relaxation is affected by temperature.

The room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors are described. The emission has appeared at a certain drain bias in a thresholdlike manner and the emission is interpreted as a result of Dyakonov-Shur plasma wave instability in the gated two-dimensional electron gas.

Several studies are conducted to explain the electrical response and electrical properties of the highly ordered organic thin film metal-insulator-semiconductor devices. The analysis reveals that the injection of the extrinsic charge carriers increases significantly with an increase in the gate voltages of the devices.

Several studies are conducted to explain the gate induced crossover taking place between the Fabry-Perot and quantum dot behavior observed in a single walled carbon nanotube hole transistor. The thickness of the tunneling barrier is shown to be highly dependent on the gate voltage change of the system.

The enhancement of current on/off ratio in field effect transistor devices with bundled single-walled carbon nanotubes (CNTs) was examined by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. Devices with low [I.sub.off] and high [I.sub.on]/[I.sub.off], which is one to five orders of magnitude larger than before etching/cutting combination process could be obtained by further incorporating a repeated gate voltage sweeping step.

The application of warm electron injection (WEI) as a mechanism for NOR programming of double-gate SONOS memories through two dimensional (2D) full-band Monte Carlo simulations is demonstrated. The results from limitations of adopted physical model confirmed the experimental observation for the WEI which provides a well localized trapped charge and offers interesting perspectives for multilevel and dual bit operation, even in devices with negligible short channel effects.

A study was conducted to examine the Ge[O.sub.2] grown by a slot-plane-antenna (SPA) high density radical oxidation, and the oxidation kinetics of radical oxidation Ge[O.sub.2]. The study results offer insight into electrical properties with very low interface state density and the conduction and the valence band offsets of Ge[O.sub.2] with respect to Ge.

A cation-derived allosteric G-quadruplex DNAzyme (PW17) is used for devising a new class of DNA logic gate based on cation-tuned ligand binding and release. The [K.sup.+]-[Pb.sup.2+]-switched G-quadruplex has functioned as a two-input INHIBIT logic gate and the introduction of another input EDTA has shown that G-quadruplex can be used for constructing a reversibly operated IMPLICATION gate.

A 1mm square array of oxidation sharpened p-type Si field emitter tips has produced 40 ps rise time pulsed electron emission into the vacuum when excited by 100 fs duration optical pulses. The results have shown that more efficient photoexcited picosecond time scale electron emission is possible from optimized semiconductor field emitter structures.

Admittance spectroscopy is used for measuring capacitance and conductance on metal-oxide-semiconductor (MOS) structures as a function of gate voltage, frequency, and temperature. The theory for admittance spectroscopy is developed by starting from basic charge carrier statistics and conductance dispersion curves are obtained that need not be adjusted by assuming lateral surface potential variations at the oxide-semiconductor interface.

Hole mobility enhancement in double-gate (DG) ultrathin-body (UTB) silicon-on-insulator (SOI) p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) is examined in comparison with single-gate (SG) UTB MOSFETs for various SOI thicknesses ([T.sub.SOI]). The studies have shown that mobility in the sub-10-nm-thick [T.sub.SOI] devices is increased at higher surface carrier concentrations.

The development of different principles in the area of molecular logic gates applied to diagnostic technologies for proteins are reported. Combination of molecular Boolean logic with combinatorial sensing as a general strategy to realize small scale, real time diagnosis of a variety of protein samples are also demonstrated.

Gated molecular baskets are functionalized to tune the conformational dynamics of the gate, installed at their rim and thus to adjust the time that a guest molecule spends inside their cavity.

An oscillatory dependence of the drain current on the drain voltage observed in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon substrate that acts as a gate is reported. The results suggested that the alternating positive and negative differential resistance regions generated as a function of the drain-source voltage values could be slightly shifted by the gate voltage.

The magnetic coupled spin-torque device (MCSTD) is a new spintronics device architecture that has used spin-torque transfer technique and magnetic coupling for modulating its energy barrier. The logic functionalities such as NAND, NOR and NOT are demonstrated in micromagnetics simulations.

Many experiments under ultrahigh vacuum conditions that elucidate the role of oxygen in the functioning of silicon carbide field-effect gas sensors with nonporous platinum gates are described. The devices are sensitive both to hydrogen and to propene and the results are consistent with oxygen acting through its surface reactions with hydrogen.

Four methyl groups and four fluorine atoms are introduced at the 3,5,3',5'-positions of the 4,4'-azobiphenyloxy unit (ABP) in order to study ABP as a light-operated gate. The studies have shown how light can be used along with thermal energy to raise and lower the free energy barrier at will, thus providing STOP and GO instructions upon the operation of the molecular shuttle.

Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) [PDIF-C[N.sub.2]] are prepared by lamination of the semiconductor crystal on Si-Si[O.sub.2]/PMMA-Au gate-dielectric-contact substrates. These devices are characterized in vacuum and air and they have displayed electron mobilities and near-zero threshold voltage.

The logic network composed of three enzymes operating in concert as four concatenated logic gates is designed to process four different chemical input signals. The coupling between signal-processing enzyme logic networks and electronic transducers might allow future electronic devices to respond to immediate physiological changes and have provided autonomous signaling/actuation depending on the concentration patterns of the physiological markers.

The incorporation of nitrogen is performed during gate deposition to examine the work function tuning of reactivity sputtered MoSiN gates. The increase in nitrogen concentration in MoSiN films is found to be consistent with the lowered MoSiN work function and it could be variable over ~0.3 eV by adjusting the nitrogen concentration.

Two different electromigration procedures are described for realizing metallic nanogaps at room and liquid helium temperature. An in-plane side gate electrode coupled to the nanogap has allowed transport measurements as a function of the gate voltage and this external tool is used for examining the properties of the nanogaps.

The authors have given their views on the enhancement factor of a gated open nanotube (NT) simulated as a cylindrically folded, zero-thickness sheet of metal. They have argued that the form of the tube has led to unphysical results and the method of calculation of the enhancement factor is wrong, leading to irrelevant information about the strength of the tunneling barrier of an electron emitted from the NT.

The authors have given their views on the comment on the model calculation for enhancement factor of a gated field emission nanotube. The experimental results have demonstrated that the choice of the nanotube shape is true.

An analytical device model is described for a graphene nanoribbon field-effect transistor (GNR-FET) under the dc and ac operating conditions. The model is used for deriving explicit analytical formulas for the GNR-FET transconductance as a function of the signal frequency, collision frequency of electrons and the top gate length.