102 results on '"Awadelkarim, O. O."'
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2. The effects of glass-substrate’s surface-treatment on the characteristics of N-channel polycrystalline silicon thin film transistors
3. Electrical Studies on Metal /SrTa2O6 or TiO2/ Si Substrate Stack Systems
4. Effects of barrier height inhomogeneities on the determination of the Richardson constant.
5. Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n-channel transistors: Latent defects and passivation/depassivation of defects by hydrogen.
6. Electrical properties of contact etched p-Si: A comparison between magnetically enhanced and conventional reactive ion etching.
7. Defect states in carbon and oxygen implanted p-type silicon.
8. Electrical studies on plasma and reactive-ion-etched silicon.
9. Defect states in 2.0-MeV electron-irradiated phosphorus-doped silicon.
10. Radiation-induced defect states in low to moderately boron-doped silicon.
11. A study of iron-related centers in heavily boron-doped silicon by deep-level transient spectroscopy.
12. Deep-level transient spectroscopy and photoluminescence studies of electron-irradiated Czochralski silicon.
13. Electrical and optical properties of gold-doped n-type silicon.
14. Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors
15. Minority carrier injection limited current in Re/4H-SiC Schottky diodes
16. Erratum: “Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes” [Appl. Phys. Lett. 94, 242110 (2009)]
17. Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes
18. Modified three terminal charge pumping technique applied to vertical transistor structures
19. The dependence of UMOSFET characteristics and reliability on geometry and processing
20. Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low- k polymer interlayer dielectrics
21. Polycrystalline Silicon/Dielectric/Substrate Material Systems for Thin Film Transistor Applications: The Impact of Material Properties on Transistors' Characteristics
22. Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing
23. Crystallization of a‐Si:H on Glass for Active Layers in Thin Film Transistors: Effects of Glass Coating
24. Polycrystalline silicon thin films formed by metal-induced solid phase crystallization of amorphous silicon
25. Gate leakage current: A sensitive characterization parameter for plasma-induced damage detection in ultrathin oxide submicron transistors
26. The effect of substrates on the performance and hot-carrier reliability of n-channel thin film transistors
27. Observation of channel shortening in n-metal–oxide–semiconductor field-effect transistors arising from interconnect plasma processing
28. Chenet al.Reply
29. Electrical-stress simulation of plasma-damage to submicron metal–oxide–silicon field-effect transistors: Comparison between direct current and alternating current stresses
30. Fowler–Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon
31. Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal–oxide–silicon field-effect transistors
32. Observation of a new type of plasma etching damage: Damage to N‐channel transistors arising from inductive metal loops
33. Annealing of Reactive Ion Etching Plasma‐Exposed Thin Oxides
34. Effect of Plasma Etching Edge‐Type Exposures on Si Substrates: A Correlation Between Carrier Lifetime and Etch‐Induced Defect States
35. Electrical properties of contact etchedp‐Si: A comparison between magnetically enhanced and conventional reactive ion etching
36. Damage to Si substrates during SiO2 etching: A comparison of reactive ion etching and magnetron-enhanced reactive ion etching
37. Creation of deep gap states in Si during Cl2 or HBr plasma etch exposures
38. Reactive ion etching induced damage to SiO2 and SiO2–Si interfaces in polycrystalline Si overetch
39. A Comparison of Cl2 and HBr/Cl2-Based Polysilicon Etch Chemistries: Impact on SiO2 and Si Substrate Damage
40. Electronic states created in p-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen
41. Oxide Degradation Resulting from Photoresist Ashing
42. RADIATION-INDUCED DEFECT COMPLEX IN HYDROGENATED SILICON.
43. OPTICAL DETECTION OF NON-RADIATIVE VACANCY-RELATED DEFECTS IN SILICON.
44. Electrical Studies on Annealed D 2 Plasma‐Exposed Silicon
45. A Study of Luminescent Centers in Reactive‐Ion‐Etched Silicon
46. Photoluminescence study of radiative channels in ion-implanted silicon
47. Intensity of exciton luminescence in silicon in a weak magnetic field
48. The Role of Group-V Impurities in Defect Formation in Irradiated Silicon
49. Microscopic identification and electronic structure of a di-hydrogen–vacancy complex in silicon by optical detection of magnetic resonance
50. Defect annealing in electron-irradiated boron-doped silicon
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