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302 results on '"Maneux, Cristell"'

1. Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications

Author

Wen, Xin, Arabhavi, Akshay, Quan, Wei, Ostinelli, Olivier, Mukherjee, Chhandak, Deng, Marina, Frégonèse, Sébastien, Zimmer, Thomas, Maneux, Cristell, Bolognesi, Colombo R., and Luisier, Mathieu

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science
Abstract

The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated against experimental measurements. Two-dimensional hydrodynamic simulations are combined with 1-D full-band, atomistic quantum transport calculations to shed light on future DHBT generations whose dimensions are decreased step-by-step, starting from the current device configuration. Simulations predict that a peak transit frequency $f_{T,peak}$ of around 1.6 THz could be reached in aggressively scaled type-II DHBTs with a total thickness of 256 nm and an emitter width $W_E$ of 37.5 nm. The corresponding breakdown voltage $BV_{CEO}$ is estimated to be 2.2 V. The investigations are put in perspective with two DHBT performance limiting factors, self-heating and breakdown characteristics., Comment: 10 pages, 11 figures

Published
2021
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3. 3D Logic Cells Design and Results Based on Vertical NWFET Technology Including Tied Compact Model

Author

Poittevin, Arnaud, Mukherjee, Chhandak, O’Connor, Ian, Maneux, Cristell, Larrieu, Guilhem, Deng, Marina, Le Beux, Sebastien, Marc, François, Lecestre, Aurélie, Marchand, Cedric, Kumar, Abhishek, Rannenberg, Kai, Editor-in-Chief, Soares Barbosa, Luís, Editorial Board Member, Goedicke, Michael, Editorial Board Member, Tatnall, Arthur, Editorial Board Member, Neuhold, Erich J., Editorial Board Member, Stiller, Burkhard, Editorial Board Member, Tröltzsch, Fredi, Editorial Board Member, Pries-Heje, Jan, Editorial Board Member, Kreps, David, Editorial Board Member, Reis, Ricardo, Editorial Board Member, Furnell, Steven, Editorial Board Member, Mercier-Laurent, Eunika, Editorial Board Member, Winckler, Marco, Editorial Board Member, Malaka, Rainer, Editorial Board Member, Calimera, Andrea, editor, Gaillardon, Pierre-Emmanuel, editor, Korgaonkar, Kunal, editor, and Kvatinsky, Shahar, editor

Published
2021
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6. High Efficiency O‐band Preamplified Receiver Integrated with Semiconductor Optical Amplifier and Uni‐travelling Carrier Photodiode for Passive Optical Network.

Author

Gnanamani, Risab, Bertin, Hervé, Besancon, Claire, Mekhazni, Karim, Caillaud, Christophe, Deng, Marina, Mukherjee, Chhandak, and Maneux, Cristell

Subjects
SEMICONDUCTOR optical amplifiers, PASSIVE optical networks, COMPUTER network traffic, AVALANCHE photodiodes, OPTICAL receivers
Abstract

With the continuous increase in data traffic and enormous consumption of data in terms of video on demand services and cloud computing, there is an increasing demand for high speed and high sensitivity short reach receivers for passive optical networks (PON) access network which are point to multi‐point networks. Avalanche photodiodes (APD) are the standard receivers in PON networks due to their high sensitivity and low cost. However, it is currently not clear if they can provide high bandwidth above 40 GHz with good performance (gain, noise, etc.). Furthermore, standard PIN photodiodes do not provide sufficient sensitivity for PON networks. Therefore, in this article a SOA‐UTC receiver is proposed, which is a photonic integrated circuit (PIC) comprising a semiconductor optical amplifier (SOA) for optical preamplification and a high‐speed uni‐travelling‐carrier (UTC) photodiode for opto‐electronic conversion. A very high responsivity of 140 A W−1 is demonstrated, with a polarization dependent loss (PDL) around 1 dB and a 3 dB bandwidth of 48 GHz, which is very promising for future PON network with 50 Gbit s−1 capacity and above. [ABSTRACT FROM AUTHOR]

Published
2024
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9. Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs

Author

Weiß, Mario, Sahoo, Amit Kumar, Raya, Cristian, Santorelli, Marco, Fregonese, Sébastien, Maneux, Cristell, and Zimmer, Thomas

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Instrumentation and Detectors
Abstract

This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters are extracted using three dimensional (3D) thermal TCAD simulations. The obtained parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between emitter fingers. Very good agreement is achieved between circuit simulations and DC measurements carried out on an in house designed test structure., Comment: Preprint, submitted to EDSSC 2013

Published
2013

15. 3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs

Author

Mannaa, Sara, primary, Poittevin, Arnaud, additional, Marchand, Cédric, additional, Deleruyelle, Damien, additional, Deveautour, Bastien, additional, Bosio, Alberto, additional, O’Connor, Ian, additional, Mukherjee, Chhandak, additional, Wang, Yifan, additional, Rezgui, Houssem, additional, Deng, Marina, additional, Maneux, Cristell, additional, Müller, Jonas, additional, Pelloquin, Sylvain, additional, Moustakas, Konstantinos, additional, and Larrieu, Guilhem, additional

Published
2023
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17. Circuit Design Flow dedicated to 3D vertical nanowire FET

Author

Maneux, Cristell, Chhandak, Mukherjee, Deng, Marina, Neckel Wesling, Bruno, Réveil, Lucas, Stanojevic, Zlatan, Baumgartner, Oskar, O'Connor, Ian, Poittevin, Arnaud, Larrieu, Guilhem, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Global TCAD Solutions, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and ANR-18-CE24-0005,LEGO,Portes logiques élémentaires empillées(2018)

Subjects
[SPI]Engineering Sciences [physics], [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience; To continue transistor downscaling beyond lateral 7nm devices, gate-all-around (GAA) junction-less vertical nanowire field effect transistors (VNWFET) represent a promising option. This invited paper presents the circuit design flow based on a vertical junctionless transistor technology. On the basis of state-of-the-art junctionless nanowire transistors (JLNT), DC characterization, compact modelling, EM simulation and parameter extraction are described in details. Using this circuit design flow, a set of innovative 3D circuit architectures are explored.

Published
2022
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24. An Access Modelling-based De-embedding Method for High-frequency Characterization of Uni-traveling carrier Photodiodes

Author

Guendouz, Djeber, DENG, Marina, Chhandak, Mukherjee, Caillaud, Christophe, Mounaix, Patrick, De Matos, Magali, Maneux, Cristell, Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, Alcatel-Thales III-V Lab (III-V Lab), and THALES

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2022

25. 0.4-µm InP/InGaAs DHBT with a 380-GHz fT > 600-GHz fMAX and BVCE0 > 4.5 V

Author

Davy, Nil, Nodjiadjim, Virginie, Riet, Muriel, Mismer, Colin, DENG, Marina, Chhandak, Mukherjee, Renaudier, Jeremie, Maneux, Cristell, Alcatel-Thales III-V Lab (III-V Lab), THALES, Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), and Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2021

26. Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited)

Author

Fregonese, Sebastien, Chhandak, Mukherjee, Rucker, Holger, Chevalier, Pascal, Fischer, Gerhard, Céli, Didier, DENG, Marina, Marc, François, Maneux, Cristell, Zimmer, Thomas, Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, Innovations for High Performance Microelectronics (IHP), STMicroelectronics [Crolles] (ST-CROLLES), and Université de Bordeaux (UB)

Subjects
[SPI]Engineering Sciences [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2021

27. Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design

Author

Guendouz, Djeber, Mukherjee, Chhandak, Deng, Marina, De Matos, Magali, Caillaud, Christophe, Bertin, Hervé, Bobin, Antoine, Vaissière, Nicolas, Mekhazni, Karim, Mallecot, Franck, Arabhavi, Akshay M., Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo, Mounaix, Patrick, Maneux, Cristell, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), III-V lab, a joint lab between NBLF, TRT and CEA-Leti, Millimeter-Wave Electronics Laboratory [ETH Zürich] (MWE), Department of Information Technology and Electrical Engineering [Zürich] (D-ITET), and Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich)- Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich)

Subjects
SPICE, bandwidth, Technology, QH301-705.5, Physics, QC1-999, Engineering (General). Civil engineering (General), uni-traveling carrier photodiodes, compact model, terahertz, de-embedding, on-wafer characterization, Chemistry, [SPI]Engineering Sciences [physics], uni-traveling carrier photodiode, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, TA1-2040, Biology (General), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, QD1-999, deembedding
Abstract

Due to the continuous increase in data traffic, it is becoming imperative to develop communication systems capable of meeting the throughput requirements. Monolithic Opto-Electronic Integrated Circuits (OEICs) are ideal candidates to meet these demands. With that in mind, we propose a compact and computationally efficient model for Uni-Traveling Carrier Photodiodes (UTC-PDs) which are a key component of OEICs because of their high bandwidth and RF output power. The developed compact model is compatible with existing SPICE design software, enabling the design of beyond 5G and terahertz (THz) communication circuits and systems. By introducing detailed physical equations describing, in particular, the dark current, the intrinsic series resistance, and the junction capacitance, the model accurately captures the physical characteristics of the UTC-PD. The model parameter extraction follows a scalable extraction methodology derived from that of the bipolar and CMOS technologies. A detailed description of the de-embedding process is presented. Excellent agreement between the compact model and measurements has been achieved, showing model versatility across various technologies and scalability over several geometries., Applied Sciences, 11 (23), ISSN:2076-3417

Published
2021
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28. THz electronics and Photonics compact modelling on InP Substrate (Invited)

Author

Maneux, Cristell, Chhandak, Mukherjee, DENG, Marina, Université de Bordeaux (UB), Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, Mukherjee, Chhandak, and Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2021

29. Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited)

Author

Maneux, Cristell, Chhandak, Mukherjee, DENG, Marina, Dubourg, Maeva, Réveil, Lucas, Bordea, Georgeta, Lecestre, Aurélie, Larrieu, Guilhem, Trommer, Jens, Breyer, Evelyn, Slesazeck, Stefan, Mikolajick, Thomas, Baumgartner, Oskar, Karner, M., Pirker, David, Stanojevic, Zlatan, Atienza, David, Levisse, Alexandre, Ansaloni, Giovanni, Poittevin, Arnaud, Bosio, Alberto, Deleruyelle, D., Marchand, Cédric, O'Connor, Ian, Université de Bordeaux (UB), Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), NaMLab gGmbH, Global TCAD Solutions, Ecole Polytechnique Fédérale de Lausanne (EPFL), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
[SPI]Engineering Sciences [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2021

39. Compact Modeling and Parameter Extraction Strategies for InP Double Heterojunciton Bipolar Transistors

Author

Chhandak, Mukherjee, DENG, Marina, Maneux, Cristell, Bolognesi, Colombo, Nodjiadjim, Virginie, Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université de Bordeaux (UB), Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), Alcatel-Thales III-V Lab (III-V Lab), and THALES

Subjects
[SPI]Engineering Sciences [physics], Hardware_INTEGRATEDCIRCUITS, Hardware_PERFORMANCEANDRELIABILITY, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Hardware_LOGICDESIGN
Abstract

Workshop "From InP bipolar transistors to analog front-end integrated circuits: Innovations in devices, THz measurements, compact modeling and circuits"; International audience

Published
2021

40. Implementation of tunneling phenomena in a CNTFET compact model

Author

Fregonese, Sebastien, Maneux, Cristell, and Zimmer, Thomas

Subjects
Analog to digital converters -- Design and construction, Field-effect transistors -- Models, Field-effect transistors -- Evaluation, Nanotubes -- Composition, Nanotubes -- Electric properties, Tunneling (Physics) -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The implementation of band-to-band tunneling (BTBT) mechanisms into the compact model of a conventional carbon nanotube transistor FET featuring a MOSFET-like operation is presented. The major influence of the BTBT mechanisms on the transistor and circuit figures of merit revealed their importance for large-signal analog and digital circuit designs.

Published
2009

41. Implementation of electron-phonon scattering in a CNTFET compact model

Author

Fregonese, Sebastien, Goguet, Johnny, Maneux, Cristell, and Zimmer, Thomas

Subjects
Field-effect transistors -- Models, Field-effect transistors -- Evaluation, Nanotubes -- Acoustic properties, Nanotubes -- Optical properties, Phonons -- Evaluation, Potential theory (Mathematics) -- Usage, Business, Electronics, Electronics and electrical industries
Abstract

A study analytically implements acoustic phonon (AP) and optical phonon (OP) scattering to extend a ballistic conventional carbon nanotube FET (CNTFET) compact model to the case of nonballistic transport. The modifications in the compact model are discussed, its simulation results are validated with nonequilibrium Green function simulation results and the key effects of AP and OP scattering on transistor figures of merit in both analog and digital circuit designs are analyzed.

Published
2009

42. Computationally efficient physics-based compact CNTFET model for circuit design

Author

Fregonese, Sebastien, d'Honincthun, Hugues Cazin, Goguet, Johnny, Maneux, Cristell, Zimmer, Thomas, Bourgoin, Jean-Philippe, Dollfus, Philippe, and Galdin-Retailleau, Sylvie

Subjects
Voltage -- Evaluation, Field-effect transistors -- Design and construction, Metal oxide semiconductor field effect transistors -- Evaluation, Nanotubes -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

A computationally efficient compact model is presented for the conventional carbon nanotube field-effect transistor (CNTFET) featuring a metal-oxide-semiconductor field-effect transistors (MOSFET)-like operation. Findings reveal the capability of the compact model in determining the CNTFET threshold voltage distribution.

Published
2008

43. Electrical behavior and technology optimization of Si/SiGeC HBTs on thin-film SOI

Author

Avenier, Gregory, Fregonese, Sebastien, Chevalier, Pascal, Bustos, Jessy, Saguin, Fabienne, Schwartzmann, Thierry, Maneux, Cristell, Zimmer, Thomas, and Chantre, Alain

Subjects
Bipolar transistors -- Design and construction, Bipolar transistors -- Electric properties, Silicon-on-isolator -- Analysis, Dielectric films -- Electric properties, Dielectric films -- Analysis, Thin films -- Electric properties, Thin films -- Analysis, Integrated circuit fabrication, Integrated circuit fabrication, Business, Electronics, Electronics and electrical industries
Abstract

The technology optimization of a vertical SiGeC heterojunction bipolar transistor (HBT) on thin-film silicon-on-insulator (SOI) substrates is presented. Findings reveal fully functional devices and ideal operation for high and low collector doping.

Published
2008

44. Analysis of Energy-Delay-Product for a 3D Vertical Nanowire FET Technology for Logic Applications

Author

O'Connor, Ian, Stanojevic, Zlatan, Baumgartner, Oskar, Mukherjee, Chhandak, Larrieu, Guilhem, Trommer, Jens, Maneux, Cristell, Université de Lyon, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
ACM: B.: Hardware/B.7: INTEGRATED CIRCUITS, [INFO.INFO-AR]Computer Science [cs]/Hardware Architecture [cs.AR], ACM: B.: Hardware/B.6: LOGIC DESIGN, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

This document proposes a simplified analysis of the energy-delay-product (EDP) for a junction-less 3D vertical gate-all-around nanowire FET technology, with a physical channel length of 14nm, in comparison with the EDP of a baseline 7nm FinFET technology.

Published
2020

45. CNTFET modeling and reconfigurable logic-circuit design

Author

O'Connor, Ian, Liu, Junchen, Gaffiot, Frederic, Pregaldiny, Fabien, Lallement, Christophe, Maneux, Cristell, Goguet, Johnny, Fregonese, Sebastien, Zimmer, Thomas, Anghel, Lorena, Dang, Trong-Trinh, and Leveugle, Regis

Subjects
Field-effect transistors -- Design and construction, Logic design -- Research, Business, Computers and office automation industries, Electronics, Electronics and electrical industries
Abstract

This paper examines aspects of design technology required to explore advanced logic-circuit design using carbon nanotube field-effect transistor (CNTFET) devices. An overview of current types of CNTFETs is given and highlights the salient characteristics of each. Compact modeling issues are addressed and new models are proposed implementing: 1) a physics-based calculation of energy conduction sub-band minima to allow a realistic analysis of the impact of CNT helicity and radius on the dc characteristics; 2) descriptions of ambipolar behavior in Schottky-barrier CNTFETs and ambivalence in double-gate CNTFETs (DG-CNTFETs). Using the available models, the influence of the parameters on the device characteristics were simulated and analyzed. The exploitation of properties specific to CNTFETs to build functions inaccessible to MOSFETs is also described, particularly with respect to the use of DG-CNTFETs in fine-grain reconfigurable logic. Index Terms--Circuit simulation, carbon nanotube field-effect transistor (CNTFET), compact model, reconfigurable logic gates.

Published
2007

46. Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

Author

Mukherjee, Chhandak, primary, Deng, Marina, additional, Nodjiadjim, Virginie, additional, Riet, Muriel, additional, Mismer, Colin, additional, Guendouz, Djeber, additional, Caillaud, Christophe, additional, Bertin, Hervé, additional, Vaissiere, Nicolas, additional, Luisier, Mathieu, additional, Wen, Xin, additional, De Matos, Magali, additional, Mounaix, Patrick, additional, and Maneux, Cristell, additional

Published
2021
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47. Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz

Author

Deng, Marina, primary, Mukherjee, Chhandak, additional, Yadav, Chandan, additional, Fregonese, Sebastien, additional, Zimmer, Thomas, additional, De Matos, Magali, additional, Quan, Wei, additional, Arabhavi, Akshay Mahadev, additional, Bolognesi, Colombo R., additional, Wen, Xin, additional, Luisier, Mathieu, additional, Raya, Christian, additional, Ardouin, Bertrand, additional, and Maneux, Cristell, additional

Published
2020
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50. Compact Modeling of UTC Photodiodes Enabling Future Terahertz Communication System Design

Author

Chhandak, Mukherjee, Natrella, M., Seddon, J., Grahams, C., Mounaix, Patrick, Renaud, C. C., Maneux, Cristell, Department of Electrical and Electronic Engineering [London] (DEEE), Imperial College London, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), and DENG, Marina

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2019

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