1. Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory.
- Author
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Nardi, Federico, Balatti, Simone, Larentis, Stefano, Gilmer, David C., and Ielmini, Daniele
- Subjects
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METAL insulator semiconductors , *NONVOLATILE random-access memory , *HAFNIUM oxide , *BIPOLAR integrated circuits , *COMPUTER storage devices - Abstract
Resistive-switching random access memory (RRAM) devices utilizing a crossbar architecture represent a promising alternative for Flash replacement in high-density data storage applications. However, RRAM crossbar arrays require the adoption of diodelike select devices with high on–off -current ratio and with sufficient endurance. To avoid the use of select devices, one should develop passive arrays where the nonlinear characteristic of the RRAM device itself provides self-selection during read and write. This paper discusses the complementary switching (CS) in hafnium oxide RRAM, where the logic bit can be encoded in two high-resistance levels, thus being immune from leakage currents and related sneak-through effects in the crossbar array. The CS physical mechanism is described through simulation results by an ion-migration model for bipolar switching. Results from pulsed-regime characterization are shown, demonstrating that CS can be operated at least in the 10-ns time scale. The minimization of the reset current is finally discussed. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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