1. Analysis of Kink Effect in Short-Channel Floating Body PD-SOI MOSFETs
- Author
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Kyeongjun Kim and Seonghearn Lee
- Subjects
Kink effect ,SOI MOSFET ,short-channel ,floating body ,gate length dependence ,parasitic BJT ,Electrical engineering. Electronics. Nuclear engineering ,TK1-9971 - Abstract
The origin of a greater decrease in kink drain voltage $V_{kink}$ in floating body PD-SOI MOSFETs with gate lengths shorter than $0.35 ~\mu m$ is newly revealed. The $V_{kink}$ formula as a function of the internal body voltage and $I_{DS}$ is derived by combining the modified impact ionization multiplication factor with the body-source junction I-V equation. The parameters in this formula are extracted from the measured data of $I_{B}$ vs. $V_{BS}$ and ${- I}_{B}/I_{DS}$ vs. $V_{DS}$ in the body contacted devices. By calculating the formula using the extracted parameters, it is newly found that a decrease of the drain-source saturation voltage at a shorter channel is a primary cause for the short-channel effect on $V_{kink}$ reduction.
- Published
- 2023
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