1. Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors.
- Author
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Li, Liuan, Nakamura, Ryosuke, Wang, Qingpeng, Jiang, Ying, and Ao, Jin-Ping
- Subjects
TITANIUM nitride ,GALLIUM nitride ,FIELD-effect transistors ,REACTIVE sputtering ,SCHOTTKY barrier ,CHEMICAL synthesis - Abstract
In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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