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To develop new environmentally friendly and recyclable high-voltage cable insulation materials, the effects of the particle size of zinc oxide (ZnO) on the mechanical and electrical properties of nanocomposites were investigated based on a feasibility study of polypropylene (PP) as a high-performance cable insulation material. The small particle size of ZnO can synergistically toughen PP with a polyolefin elastomer (POE), but the large particle size of ZnO leads to lower elongation at break. Adding ZnO nanoparticles can improve the bulk resistivity of the composites and suppress space charge injection. 0.5ZnO200 has the highest direct current and alternating current breakdown field strengths, 36.6% and 14.7% higher than PP/POE, respectively. This improvement may be due to the ability of 200 nm ZnO to introduce more deep traps. However, as the nanoparticle content rises and the particle size decreases, the agglomeration becomes more frequent, leading to the overlap of inter-nano interfaces and reducing the modification effect of the nanoparticles. This study on the effect law of nano-ZnO with different particle sizes on the microstructure, mechanical properties, and electrical properties of PP can provide a reference for developing new recyclable high-voltage insulated cable materials. KEYWORDS dielectric properties, mechanical properties, nanocomposites, nanoparticles, polypropylene (PP), 1 | INTRODUCTION Cross-linked polyethylene high-voltage cables have been widely used in recent decades. Yet, cross-linked polyethylene is a thermosetting material that is unrecyclable at its end of life. [1] [...]

The sensitivity of semiconductor sensors based on tin (Sn[O.sub.2]), tungsten (W[O.sub.3]), and zinc (ZnO) oxides and Sn[O.sub.2] with catalytic admixtures of [La.sub.2][O.sub.3] and CuO to hydrogen sulfide is studied at [H.sub.2]S concentration 50 ppm in dry air in the temperature range 100-600°C. Concentration dependences for oxides are studied in the temperature range 350-450°C and [H.sub.2]S concentration range 0.5-100 ppm at the humidity of gas media 0-80 rel. %. It is shown that, under the specified conditions, the resistance and of sensors to [H.sub.2]S in air weakly depends on humidity. It was found that sensors based on Sn[O.sub.2] with an admixture of 3% [La.sub.2][O.sub.3] working at 350°C are the best for the registration of [H.sub.2]S by the set of performance and operation characteristics. A presumable mechanism of [H.sub.2]S interaction with oxide surfaces is considered, according to which each [H.sub.2]S molecule releases seven electrons to the conductivity zone of the oxide and molecules of metal oxides in the surface layer are, possibly, partially replaced by sulfide molecules. Keywords: gas sensitivity (response) to [H.sub.2]S, metal oxide, sensor, humidity DOI: 10.1134/S1061934814020105, Among toxic and explosive gases hydrogen sulfide occupies a leading position. It accompanies processes of methane recovery from gas wells on nonassociated gas fields (for example, Astrakhan and Orenburg) and [...]

The article studies the current-voltage mechanism of low-ideality factor ZnO Schottky diodes over temperature range of 40-423 K. Findings revealed that TE was a major current transport mechanism at RT and above.

A study was conducted to examine the above-threshold characteristics of amorphous silicon Zn-based oxide (ZnO) thin-film transistors (TFTs) using exponential tail-state distribution model. Findings suggested that an exponential tail-state distribution model could be used to explain the above-threshold behavior of ZnO TFTs.

A study was conducted to compare the mutual interactions amongst the top-and bottom-gate fields in a dual-gate structure for amorphous InGaZn[O.sub.4] (a-IGZO) and hydrogenated amorphous silicon thin-film transistors (TFTs). Findings conclude the limited penetration of band bending into the a-Si:H layer.

Zinc-oxide-based thin-film bulk acoustic wave (BAW) resonators are examined with respect to variation of dimensions of a boundary frame spurious mode suppression structure. The simple semi-2-D plate model has predicted the device behavior, the 2-D finite element method results have coincided with them with some additional effects and breaking the resonator behavior down to eigenmodes have provided insights into the physics of the device operation.

The ionic conductivities of mixtures of ZnO in [Na.sub.3]Al[F.sub.6] and in xCa[F.sub.2]-y[Na.sub.3]Al[F.sub.6] mixtures were established with a swept-sine measurement technique. A millivolt sinusoidal voltage at frequencies from 1000 Hz to 25,000 Hz was impressed on a system containing the electrolytes. The system's frequency response was used to establish the conductivities. The influence of these conductivities on the potential of a solar thermal electrolytic process was evaluated using two process performance parameters: the back-work ratio and the fraction of minimum solar thermal energy required to drive the metal production reaction. We found the conductivity of mixtures of ZnO-[Na.sub.3]Al[F.sub.6] to be independent of the concentration of ZnO for weight percentages of ZnO from 0.5% to 5%. For temperatures 1240-1325 K the conductivity is close to that of pure [Na.sub.3]Al[F.sub.6] , 3 [+ or -]0.5 [[OMEGA].sup.1] [cm.sup.- 1]. At temperatures from 1350 K to 1425 K it jumps to 6[+ or -]0.5 [[OMEGA].sup.-1] [cm.sup.-1] When Ca[F.sub.2] is added to the mixture, the electrolyte's conductivity drops. We thus expect that calcium cations are not present to any important extent in the electrolyte. When Ca[F.sub.2] is part of the chemical system, the concentration of ZnO can have a measurable impact on the electrolyte's conductivity. Combining the conductivity results with the two solar process performance parameters illustrates the importance of operating the solar process at low current densities when the temperature range is 1200-1500 K. The results further suggest that one should consider studying the electrolytic process at 1800 K. [DOI: 10.1115/1.3142802]

Constant-voltage-bias stress measurements are conducted on thin-film transistors (TFTs) with amorphous indium-gallium-zinc-oxide (IGZO) channel layers prepared by using radio frequency (RF) sputtering using a postdeposition annealing temperature. The instability and hysteresis observations are found to be consistent with a Si[O.sub.2]/IGZO TFT instability mechanism involving electron trapping within the IGZO channel layer.

Lightning arresters provide protection for transmission lines and power equipments. During the occurrence of lightning or switching surges, a voltage level above the equipment insulation level can be reached. An arrester, properly working, is able to limit this voltage level avoiding damages to the protected equipment. A defective arrester may not be able to provide the proper protection level in substations, exposing the equipment and personnel to damage. Monitoring of surge arresters is usually conducted by means of current measurement or thermal images acquisition. But, among power companies, there is no model procedure for the monitoring conduction and analysis of the obtained results. Besides that, when some abnormality is detected, the arrester is replaced by a new one and no further study is conducted to evaluate what kind of problem happened to it. This work proposes a method for analysis of ZnO arresters by the study of failures and usage of artificial neural networks-ANN. The ANN is able to analyze the thermal profile, detect and classify patterns that could be undetected by a visual analysis. Index Terms--Arresters, artificial neural networks, power system monitoring, thermograph, zinc oxide.

Five different compositions of the ternary system [(ZnO).sub.x][(MgO).sub.30][([P.sub.2][O.sub.5]).sub.70-x] containing 8, 10, 13, 15 and 18 moL% of ZnO were prepared by the melt quenching technique. The complex permittivity studies were presented in the frequency range of 0.01 Hz to 1 MHz and over the temperature range of 303-573 K. The empirical data were analyzed by means of the curve-fitting technique based on Havriliak-Negami model. A small broad dipolar relaxation peak was well described at frequencies between [10.sup.3] and [10.sup.6] Hz within the range of temperatures studied, while at low frequency the spectrum was dominated by dc conduction which was evidence by 1/[omega] slope in the loss factor versus frequency plot. With increasing ZnO concentration, the dielectric ([epsilon]') and dielectric strength ([DELTA][epsilon]) both show an increasing trend while the dc conduction behaved in the opposite direction. The excessive zinc ions occupying interstitial position rather than substitutional position among the glass network and increases of the compactness of the glass structure have been suggested to be the reason behind the declining values of the dc conduction. Key words: Dielectric properties, conductivity, harviliak-negami, INTRODUCTION Phosphate glasses are both scientifically and technologically important materials because of their structural versatility to accept several cation and/or anion exchanges. These features allow the reengineering of glass formulation, [...]

The performance of resistance random access memory (RRAM) devices based on spin-coated sol-gel-derived zinc oxide (ZnO) thin films is examined. The devices are fabricated on a flexible plastic substrate and have displayed excellent durability upon repeated bending tests, thus showing their potential for flexible low-cost memory devices.

A combinatorial RF sputtering technique is used to fabricate thin-film transistors by using a semiconductor of the form [(ZnO).sub.x] [([In.sub.2][O.sub.3]).sub.1-x]. The devices fabricated with a zinc oxide fraction of 0.67 (plusminus) 0.02 have displayed the highest mobilities of 35 [cm.sup.2]/V * s for 300 degree Celsius annealing conditions.

The propagation characteristics of the shear horizontal surface acoustic wave (SH-SAW) in ZnO textured ZnO films are described. The SH-SAW device consisting of ZnO film could find potential use as candidate for a liquid sensor that detects changes in the electrical conductivity and relative permittivity.

Silicon nitride films of different refractive indices are used to study the effect of hydrogenation of ZnO TFTs by plasma-deposited silicon nitride gate dielectric. Secondary ion mass spectroscopy study show that in ZnO TFT using high refractive index silicon nitride, gate dielectric is higher that TFTs with low-refractive index silicon nitride, which is indicative of the hydrogenation of ZnO TFTs by high refractive index silicon nitride gate dielectric.

The performance of zinc-oxide (ZnO) elements is strongly dependent on the properties of the boundaries between ZnO grains, which are greatly affected by the formation of spinel particles between ZnO grains during the sintering process. The authors studied the effects of reducing spinel particles on the performance of elements and found that the characteristics of the spinel-reduced elements were improved compared with that of normal elements (e.g., superior voltage-current characteristics, smaller micropores, and larger capacitance). It was also found that the sintering temperature of the spinel-reduced elements could be decreased by more than 100[degrees]C than that of normal elements. Index Terms--Arresters, energy absorption capability, protective characteristic, zinc-oxide (ZnO) elements.

Superconducting Fault Current Limiters (SCFCLs) have improved the reliability and stability of power systems, which consists of a transformer type inductive SCFCL with a ZnO device and a resistor in parallel. The contribution share of the voltage drop suppression and the acceleration energy consumption to the improvement of the power system stability are clarified with conditions like generator output and fault clearing time.

A comparative study of the performance and stability of the zinc oxide (ZnO) thin-film transistors (TFTs) and silicon dioxide and nitride as the gate insulators is presented. The devices with SiN dielectric are shown to perform better than the devices containing silicon dioxide.