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Detectivity is the most key parameter in weak-signal photodetection, which depends on high photoresponse and low noise simultaneously. In this work, metal–semiconductor–metal solar-blind UV detectors with internal gain were fabricated based on high resistant and a certain oxygen vacancy density Ga2O3 thin films. Electrical measurements and electric field simulation indicated that thickening the active layer is helpful for high responsivity. The gain is dominated by the tunneling effect in high electric field under the electrodes. A high photoresponse of 371 A/W and a normalized detectivity up to $6.6\times10$ 16 Jones were obtained. [ABSTRACT FROM AUTHOR]

Optimized values for physical and geometrical parameters of p and n regions in the COOLMOS voltage sustaining layer, are reported.

A sustaining high-voltage structure having buried oppositely doped areas is presented.

An analytical model for the electric field distribution of positively beveled abrupt p-n junctions is shown. Simple equations for the depletion width at the surface and the maximum field as a function of beveled angle are also derived. The analytical results indicate very good agreement compared with those derived from numerical simulations. By employing the technique of superposition of a common-mode abrupt injunction and a differential mode abrupt injunction, the model can also be used for the case of a dielectric with large permittivity covering the beveled surface.

A novel insulated gate bipolar transistor modulated by a high-k dielectric (HK-IGBT) is presented. By laterally alternating the HK-pillar and N-drift, HK-IGBT can offer a quick and complete depletion to the drift region during the turn-off transient. This merit greatly reduces the current varying time of an HK-IGBT. Moreover, HK-IGBT can obtain a better electric field distribution, which enables the carrier stored layer (CSL) to have a higher doping dose when compared to a typical carrier stored trench gate bipolar transistor (CSTBT). These advantages improve the relationship between the static and transient power losses. According to the simulation results, HK-IGBT obtains a 66% lower turn-off loss than that of a field stop (FS) IGBT with the same ON-state voltage. Moreover, by using a CSL, the performance of an HK-IGBT can be comparable with that of a super-junction IGBT (SJ-IGBT). [ABSTRACT FROM AUTHOR]

A novel double-reduced surface field (RESURF) silicon-on-insulator (SOI) lateral trench insulated-gate bipolar transistor (LTIGBT) with self-biased nMOS is proposed and investigated by simulation. During the turn-on transient, the self-biased nMOS is turned-off, and the p-top region is floating, and therefore the conductivity modulation in the drift region on the emitter side can be enhanced to achieve a low on-state voltage (${V}_{\textsf {CE(sat)}}$). During the turn-off transient, the self-biased nMOS is turned on, and the p-top region is connected to the emitter, which effectively reduces its turn-off loss (${E}_{ \mathrm{\scriptscriptstyle OFF}}$). As a result, the proposed LTIGBT realizes superior ${V}_{\textsf {CE(sat)}}$ – $E_{ \mathrm{\scriptscriptstyle OFF}}$ tradeoff relationship than both the conventional SOI trench-gate lateral insulated-gate bipolar transistor (LIGBT) (LTIGBT-A) and the double-RESURF SOI trench-gate LIGBT (LTIGBT-B). Simulation results reveal that, with the identical ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ of 0.25 mJ/cm2, ${V}_{\textsf {CE(sat)}}$ of the proposed LTIGBT is 1.08 V, which is 11.4% and 32.5% lower than those of LTIGBT-A and LTIGBT-B, respectively; with the identical ${V}_{\textsf {CE(sat)}}$ of 1.1 V, ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ of the proposed one is 0.19 mJ/cm $^{\textsf {2}}$ , which is 70% and 89% lower than the other two, respectively. Furthermore, the proposed device exhibits a lower saturation current. [ABSTRACT FROM AUTHOR]