1. Impact of Externally Induced Local Mechanical Stress on Electrical Performance of Decananometer MOSFETs.
- Author
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Lee, Kookjin, Kaczer, Ben, Kruv, Anastasiia, Gonzalez, Mario, Eneman, Geert, Okudur, Oguzhan Orkut, Grill, Alexander, and De Wolf, Ingrid
- Subjects
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STRAINS & stresses (Mechanics) , *MECHANICAL loads , *COMPLEMENTARY metal oxide semiconductors , *METAL oxide semiconductor field-effect transistors , *FIELD-effect transistors , *TRANSISTORS , *THRESHOLD voltage - Abstract
Vertical, gigapascal-level mechanical stress (MS) is induced at different locations along the channel of 40-nm effective gate length planar CMOS field-effect transistor (FET) devices and electrical parameter variations are investigated. In both p-and n-channel devices, the threshold voltage, mobility, and ON-current are seen to change proportionally with the additional MS, while gate-induced drain-leakage current increases exponentially. A clear effect of the location of the applied force along the source–drain direction is observed on the transistor parameters. Simulations show that a mechanical load located closer to the FET source induces a stronger asymmetry between the source and drain stresses. This leads to asymmetric subband splitting/warping, which reduces the backscattering rate at the source, in line with theoretical predictions on the importance of the channel barrier near the source for current in quasi-ballistic transistors. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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