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Presents a study that investigated the deep levels and electrical properties in silicon and beryllium-coimplanted semi-insulating gallium arsenide. Experimental procedures; Results; Discussion.

Details a study which investigated the passivation and dissociation process of hydrogen-silicon donor complex in plasma-hydrogenated gallium arsenide. Temperature dependent values of dissociation frequencies; Results of the electric field annealing experiment; Dissociation kinetics of the hydrogen-donor complex.

Analyzes the deep levels in undoped bulk InP after rapid thermal annealing. Information on different insulating layers that form the MIS structures; Application of deep level transient spectroscopy in the study of the behavior of the rapid thermal annealed InP in metal-insulator-semiconductor (MIS) structures; Assessment of the effects of an insulating layer on interface states in the InP-MIS structure.

Presents a study that examined leakage current effects for the midgap levels in an aluminum/ gallium arsenide semiconductor junction using isothermal capacitance transient spectroscopy. Analysis of the temperature dependence of the leakage current density; Effect of leakage current on isothermal capacitance transient spectra; Examination of the emission rate in a capacitance transient.

Presents annealing and hydrogenation behaviors for EL2 and EL6 as dominant deep levels in gallium arsenide. Significance of deep levels in semiconductors; Direct relation between EL2 and EL6 in their origin; Behavior of the deep levels with annealing times.

Discusses the metastable states of the EL2 family discovered from the measurement of photocapacitance quenching. Purpose of deep level transient spectroscopy; Illustration of the arsenic antisite model involved with the interstitial arsenic and the double vacancy.

Discusses a study which investigated hydrogenation effects on silicon- and beryllium-ion-implanted GaAs exposed to the hydrogen plasma. Change in electron mobilities that occurred in the sample hydrogenated for 60 minutes at room temperature; Factor responsible for defect and impurity passivation in crystalline semiconductor materials; Reasons for not utilizing atomic hydrogen processing.

Focuses on a study which investigated the deep electron traps in gallium arsenide layers grown on (100) silicon substrates by metalorganic chemical vapor deposition. Difference between gallium arsenide on silicon substrates and gallium arsenide substrates; Description of the experiment; Result and discussion.