1. Unipolar resistive switching behavior of amorphous YCrO3 films for nonvolatile memory applications.
- Author
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Sharma, Yogesh, Misra, Pankaj, and Katiyar, Ram S.
- Subjects
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THIN films , *NONVOLATILE memory , *FIELD-effect transistors , *PHOTOELECTRON spectroscopy , *TEMPERATURE - Abstract
Amorphous YCrO3 (YCO) films were prepared on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ∼105 between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space-charge limited conduction mechanisms, respectively. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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