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Presents a study that investigated the deep levels and electrical properties in silicon and beryllium-coimplanted semi-insulating gallium arsenide. Experimental procedures; Results; Discussion.

Details a study which investigated the passivation and dissociation process of hydrogen-silicon donor complex in plasma-hydrogenated gallium arsenide. Temperature dependent values of dissociation frequencies; Results of the electric field annealing experiment; Dissociation kinetics of the hydrogen-donor complex.

Analyzes the deep levels in undoped bulk InP after rapid thermal annealing. Information on different insulating layers that form the MIS structures; Application of deep level transient spectroscopy in the study of the behavior of the rapid thermal annealed InP in metal-insulator-semiconductor (MIS) structures; Assessment of the effects of an insulating layer on interface states in the InP-MIS structure.

Presents a study that examined leakage current effects for the midgap levels in an aluminum/ gallium arsenide semiconductor junction using isothermal capacitance transient spectroscopy. Analysis of the temperature dependence of the leakage current density; Effect of leakage current on isothermal capacitance transient spectra; Examination of the emission rate in a capacitance transient.

Presents annealing and hydrogenation behaviors for EL2 and EL6 as dominant deep levels in gallium arsenide. Significance of deep levels in semiconductors; Direct relation between EL2 and EL6 in their origin; Behavior of the deep levels with annealing times.

Discusses the metastable states of the EL2 family discovered from the measurement of photocapacitance quenching. Purpose of deep level transient spectroscopy; Illustration of the arsenic antisite model involved with the interstitial arsenic and the double vacancy.

Discusses a study which investigated hydrogenation effects on silicon- and beryllium-ion-implanted GaAs exposed to the hydrogen plasma. Change in electron mobilities that occurred in the sample hydrogenated for 60 minutes at room temperature; Factor responsible for defect and impurity passivation in crystalline semiconductor materials; Reasons for not utilizing atomic hydrogen processing.

Focuses on a study which investigated the deep electron traps in gallium arsenide layers grown on (100) silicon substrates by metalorganic chemical vapor deposition. Difference between gallium arsenide on silicon substrates and gallium arsenide substrates; Description of the experiment; Result and discussion.

The minority carrier (electron) capture process and the interface trap density of a TiN/Al[sub 2]O[sub 3]/p-Si metal-oxide-semiconductor capacitor were examined by deep level transient spectroscopy (DLTS). It was found that the activation energies of the large peaks detected at higher temperatures with gate bias voltages of 1.8, 1.5, 1.3, and 1.1 V were 0.19, 0.24, 0.29, and 0.37 eV, respectively. These energies were related to the electron-capture process from the conduction band by interface states in the upper half of the Si band gap. The interface state passivation effect of postannealing in a hydrogen ambient was studied from the minority carrier capture process and the usual DLTS signals. The D[sub it] at an energy of 0.35 eV from the valence bandedge decreased from 1 × 10[sup 12] cm[sup -2] eV[sup -1] at the as-fabricated state to 4 × 10[sup 11] cm[sup -2] eV[sup - 1] after H[sub 2] annealing at 450 °C. It was also found that the D[sub it] at an energy of 0.3 eV from the conduction bandedge decreased to the same amount by the same annealing process. [ABSTRACT FROM AUTHOR]

Deep levels in GaAs on Si substrates grown by metalorganic chemical vapor deposition (MOCVD) were studied during infrared rapid thermal annealing. For GaAs layers on Si after annealing at 850 °C for 20 s, three electron deep levels at 0.36, 0.27, and 0.20 eV below the conduction band were created as the dominant deep levels. Especially, the 0.36 eV level was found to increase up to 40% of the donor concentration as the thickness of Si substrates increased. These results indicate that rapid thermal annealing of GaAs on Si may induce high-density deep levels due to a biaxial tensile stress caused by the difference in thermal expansion coefficients. [ABSTRACT FROM AUTHOR]

The effect of hydrogen plasma exposure on the deep levels in GaAs grown by the horizontal Bridgman method was studied. After hydrogenation at 250 °C for 3 h, the concentrations of the electron deep levels, such as the EL2 trap (Ec-0.81 eV), the EL3 trap (Ec-0.63 eV), and the EL6 trap (Ec-0.35 eV), decrease by one order of magnitude. On the other hand, three new electron traps at Ec -0.42 eV, Ec -0.54 eV, and Ec -0.94 eV are created. After rapid thermal annealing up to 550 °C for 10 s, these created traps are reduced and the deep levels decreased by hydrogenation recover nearly completely. This result reveals that the passivation and creation of deep levels by hydrogenation may be explained as the interaction of atomic hydrogen with an unsaturated bond of native defects. [ABSTRACT FROM AUTHOR]