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2. A generalized model for single event transient propagation in phase-locked loops

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3. Gate bias dependence of single event charge collection in AlSb/InAs HEMTs

4. Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements

7. Effect of total ionizing dose on a bulk 130 nm ring oscillator operating at ultra-low power

9. Temperature dependence of digital single-event transients in bulk and fully-depleted SOI technologies

10. Heavy ion microbeam- and broadbeam-induced transients in SiGe HBTs

11. Device-physics-based analytical model for single-event transients in SOI CMOS logic

12. A probabilistic analysis technique applied to a radiation-hardened-by-design voltage-controlled oscillator for mixed-signal phase-locked loops

13. Pulsed laser single-event effects in highly scaled CMOS technologies in the presence of dense metal coverage

14. The effects of low dose-rate ionizing radiation on the shapes of transients in the LM 124 operational amplifier

15. Laser verification of on-chip charge-collection measurement circuit

16. Laser-induced current transients in silicon-germanium HBTs

17. Waveform observation of digital single-event transients employing monitoring transistor technique

18. Generation and propagation of single event transients in 0.18-[micro]m fully depleted SOI

19. Measurement and analysis of interconnect crosstalk due to single events in a 90 nm CMOS technology

20. Total dose effects on error rates in linear bipolar systems

22. Transient radiation response of single- and multiple-gate FD SOI transistors

23. Transient response of semiconductor electronics to ionizing radiation. Recent developments in charge-collection measurement

24. SEU error signature analysis of Gbit/s SiGe logic circuits using a pulsed laser microprobe

25. Single-event transients in bipolar linear integrated circuits

26. Laser-induced latchup screening and mitigation in CMOS devices

28. Single-event upset in flip-chip SRAM induced by through-wafer, two-photon absorption

29. Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design

30. The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

31. Validity of using a fixed analog input for evaluating the SEU sensitivity of a flash analog-to-digital converter

32. Pulsed-laser testing methodology for single event transients in linear devices

33. Demonstration of single-event effects induced by through-wafer two-photon absorption

34. Investigation of millisecond-long analog single-event transients in the LM6144 op amp

35. A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS

36. Transient response of III-V field-effect transistors to heavy-ion irradiation

37. Three-dimensional mapping of single-event effects using two photon absorption

38. Modeling single-event effects in a complex digital device

39. Ultrafast dynamics of gold-based nanocomposite materials

40. Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects.

41. Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation

42. Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

43. Charge-collection dynamics of InP-based high electron mobility transistors (HEMTs)

44. Charge-collection dynamics of AISb-InAs-GaSb resonant interband tunneling diodes (RITDs)

45. Analysis of intermolecular coordinate contributions to third-order ultrafast spectroscopy of liquids in the harmonic oscillator limit

46. Using Machine Learning to Mitigate Single-Event Upsets in RF Circuits and Systems.

47. Pulsed-Laser Testing to Quantitatively Evaluate Latchup Sensitivity in Mixed-Signal ASICs.

48. Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth

49. Charge-enhancement mechanisms of GaAs field-effect transistors: experiment and simulation

50. Charge-collection mechanisms of AlGaAs/GaAs HBTs