116 results on '"Excimer laser annealing"'
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2. High-Efficiency Crystalline Silicon Solar Cells
3. Surface flattening of poly-Si thin films by laser annealing and electrical properties of LTPS-TFTs
4. LTPS Thin-Film Transistors Fabricated Using New Selective Laser Annealing System
5. 62‐4: Late‐News Paper: Evaluation of polycrystalline silicon after Excimer laser annealing by Retardation measurement method
6. Characteristics of Thin-Film Transistors Fabricated by the Excimer Laser-Annealed Amorphous Silicon in Ultralow Oxygen Concentrations
7. P-77: Novel and Highly Reliable XeF and KrF Excimer Laser Annealing for Reducing the Cost of Flat Panel Display Equipment
8. Post-annealing effect on the optical property of indium tin oxide sputtered films
9. Degradation in P-type Poly-Si Thin-Film Transistors under Pulse Bias Stresses
10. Improvement of the Surface Roughness of LTPS Thin Films with Additional Laser Irradiation
11. Effect of Glass Substrate on the Film Properties of Poly Silicon by Excimer Laser Annealing
12. Enhanced electrical and optical properties of room temperature deposited Aluminium doped Zinc Oxide (AZO) thin films by excimer laser annealing
13. Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
14. TFT Backplane and Issues for OLED
15. Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing
16. Laser-Diffused P Emitters for Ge TPV Cells
17. Deep junction by low thermal budget process for advanced Si power electronics
18. Improvement of electrical performance of InGaZnO/HfSiO TFTs with 248-nm excimer laser annealing
19. Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing
20. 13.1:Invited Paper: Excimer-Laser Annealing: Microstructure Evolution and a Novel Characterization Technique
21. 3.4L:Late-News Paper: Advanced ELA for Large-Sized AMOLED Displays
22. 8.2:Invited Paper: Status and Future Promise of Excimer Laser Annealing for LTPS on Large Glass Substrates
23. 57-5: Invited Paper: Excimer Laser Annealing and Spot-Beam Crystallization of Si Films for Advanced Displays
24. Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing
25. Bridged-Grain Polycrystalline Silicon Thin-Film Transistors
26. UV Excimer Laser Annealing for Next Generation Power Electronics
27. FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films
28. A New Excimer-Laser-Annealing Method for Manufacturing Large OLED Displays
29. Impacts of Excimer Laser Annealing on Shallow B-Doped Back-Surface for Back-Illuminated CMOS Imagers Applications
30. A novel optical diagnostic technique for analyzing the recrystallization characteristics of polycrystalline silicon thin films following frontside and backside excimer laser irradiation
31. Low-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions
32. The low temperature polysilicon (LTPS) thin film MOS Schottky diode on glass substrate for low cost and high performance CO sensing applications
33. Dynamical resolidification behavior of silicon thin films during frontside and backside excimer laser annealing
34. High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing
35. Study of ultra-shallow p+n junctions formed by excimer laser annealing
36. Excimer Laser Crystallization Processes of Amorphous Silicon Thin Films by Using Molecular-dynamics Simulations
37. Ultra-Shallow Junction Formation by Plasma doping and Excimer Laser Annealing
38. Electrical Activation of Boron in Si Film Using Excimer Laser Annealing
39. Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing
40. A 3.5in. QVGA poly-Si TFT-LCD with integrated driver including new 6-bit DAC
41. Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing
42. Defects in Polycrystalline Silicon Thin-Films Crystallized by Solid Phase and Excimer Laser Annealing
43. Crystal Growth of Polycrystalline Silicon by Excimer Laser Annealing-Influence of Hydrogens and Substrate Thermal Conductivity on the Critical Energy Density
44. Development of a low temperature doping technique for applications in poly‐si TFT on plastic substrates
45. A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of highly doped layers
46. Poly-Si thin film transistors fabricated by combining excimer laser annealing and metal induced lateral crystallization
47. Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
48. Ultra-shallow junction formation by excimer laser annealing and low energy (<1 keV) B implantation: A two-dimensional analysis
49. Thermal Effect Simulation Analysis on Excimer Laser Annealing of Zinc Oxide Thin Films
50. Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide
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