331 results on '"Yang, J.W."'
Search Results
102. P/He ion implant isolation technology for AlGaN/GaN HFETs
103. Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction
104. Dependence of DC and RF characteristics on gate length for high current AlGaN/GaN HFETs
105. 8 × 8 GaN Schottky barrier photodiode array for visible-blind imaging
106. High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates
107. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
108. High temperature characteristics of Pd Schottky contacts on n-type GaN
109. Visible-blind ultraviolet photodetectors based on GaN p-n junctions
110. The α → β polytypic transformation in high-temperature indented SiC
111. Polytypic transformations in SiC: the role of TEM
112. Rapid Thermal Annealing for Electrical Activation in The Fabrication of GaAs Mesfet
113. Edge plasma phenomena of the low density plasma to high density transition in the HL-1 tokamak
114. A first-principles study on the structural and elastic properties and the equation of state of wurtzite-type cadmium selenide under pressure.
115. High performance 0.25 /spl mu/m gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates.
116. Localization and Hopping of Excitons in Quaternary AlInGaN.
117. STRAIN ENERGY BAND ENGINEERING APPROACH TO AIN/GaN/InN HETEROJUNCTION DEVICES.
118. LOW FREQUENCY NOISE IN GALLIUM NITRIDE FIELD EFFECT TRANSISTORS.
119. High-resolution low-power CMOS D/A converter.
120. Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure
121. Microwave Simulation on the Performance of High Power GaN/AlGaN Heterostructure Field Effect Transistors
122. Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates
123. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator.
124. Electric-field-induced quenching effect of Raman scattering in Mg-doped p-GaN.
125. GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices.
126. Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates.
127. Degradation of d.c. parameters in enhancement mode WNx self-aligned gate GaAs MESFETs under high temperature stress
128. Piezoresistive effect in GaN--AlN--GaN structures.
129. Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors.
130. Schottky barrier detectors on GaN for visible-blind ultraviolet detection.
131. Hole effective masses in relaxed Si[sub1-x]C[sub x] and Si[sub 1-y]Ge[sub y] alloys.
132. Deposition of high quality wurtzite GaN films over cubic (111) MgAl[sub 2]O[sub 4] substrates....
133. Temperature-mediated phase selection during growth of GaN on (111)A and (111)B GaAs substrates.
134. Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates.
135. Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers.
136. Application of oxidation to the structural characterization of SiC epitaxial films.
137. Study of contact formation in AlGaN/GaN heterostructures.
138. Growth of epitaxial GaN films by pulsed laser deposition.
139. 0.12-μm gate III-V nitride HFET's with high contact resistances.
140. Measurements of upper atmosphere wind and temperature from meteorological rocket experiments during winter 1979
141. Heat transfer analysis of internally-cooled fuel element
142. Penetration of a turbulent jet with negative buoyancy into the upper plenum of an LMFBR
143. Free convection in an air-water vapor boundary layer
144. 3.2 W/mm, 71% PAE AlGaN/GaN HEMT operation at 20 GHz
145. High performance 0.25 μm gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
146. Highly uniform and reproducible 850 nm vertical-cavity surface-emitting lasers grown by MOCVD
147. 1.6 w/mm, 26% PAE AlGaN/GaN HEMT operation at 29GHz
148. Quaternary AlInGaN based vertically conducting light emitting diodes on SiC
149. Strain energy band engineering approach to AlN/GaN/InN heterojunction devices
150. La-doped metal/high-K nMOSFET for sub-32nm HP and LSTP application.
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