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113. Edge plasma phenomena of the low density plasma to high density transition in the HL-1 tokamak

114. A first-principles study on the structural and elastic properties and the equation of state of wurtzite-type cadmium selenide under pressure.

117. STRAIN ENERGY BAND ENGINEERING APPROACH TO AIN/GaN/InN HETEROJUNCTION DEVICES.

118. LOW FREQUENCY NOISE IN GALLIUM NITRIDE FIELD EFFECT TRANSISTORS.

120. Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure

121. Microwave Simulation on the Performance of High Power GaN/AlGaN Heterostructure Field Effect Transistors

122. Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates

123. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator.

124. Electric-field-induced quenching effect of Raman scattering in Mg-doped p-GaN.

125. GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices.

126. Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates.

128. Piezoresistive effect in GaN--AlN--GaN structures.

129. Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors.

130. Schottky barrier detectors on GaN for visible-blind ultraviolet detection.

131. Hole effective masses in relaxed Si[sub1-x]C[sub x] and Si[sub 1-y]Ge[sub y] alloys.

132. Deposition of high quality wurtzite GaN films over cubic (111) MgAl[sub 2]O[sub 4] substrates....

133. Temperature-mediated phase selection during growth of GaN on (111)A and (111)B GaAs substrates.

134. Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates.

135. Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers.

136. Application of oxidation to the structural characterization of SiC epitaxial films.

137. Study of contact formation in AlGaN/GaN heterostructures.

138. Growth of epitaxial GaN films by pulsed laser deposition.

147. 1.6 w/mm, 26% PAE AlGaN/GaN HEMT operation at 29GHz

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