419 results on '"Xia, Yidong"'
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202. The thermal stability and electrical properties of LaErO3films as high-kgate dielectrics
203. Fatigue characteristics of Nd-substituted Bi4Ti3O12ferroelectric thin films at elevated temperatures
204. Electrical hysteresis of the Ti0.25Al0.75Ox dielectric films after high-temperature treatment
205. Studies of two distinct types of (Ba,Sr)TiO3∕Pt interfaces
206. An investigation into ultra-thin pseudobinary oxide (TiO2)x(Al2O3)1-x films as high-k gate dielectrics
207. Conduction behavior change responsible for the resistive switching as investigated by complex impedance spectroscopy
208. Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films
209. Influence of substrate temperature on the molecular structure of PMMA films deposited by pulsed laser deposition
210. Field-induced resistive switching based on space-charge-limited current
211. Interface modulation and resistive switching evolution in Pt/NiO/AlO/n-Si structure.
212. Effects of the substitution of Pb for Ba in (Ba,Sr)TiO3 films on the temperature stability of the tunable properties
213. Effects of applied electric field during postannealing on the tunable properties of (Ba,Sr)TiO3 thin films
214. Electrical properties of chemical-solution-derived Bi3.54Nd0.46Ti3O12 ferroelectric thin films
215. Half-metallicity in graphitic C3N4 nanoribbons: An ab initio study.
216. High-k-rare-earth-oxide Eu2O3 films for transparent resistive random access memory (RRAM) devices.
217. Electron-beam induced phase transformation in β-Ag2Se thin films.
218. UV EMISSION OF TETRAGONAL ZrO2 NANOCRYSTALS EMBEDDED IN ZrSiO4 AMORPHOUS MATRIX.
219. Study on the thermal stability and electrical properties of the high- k dielectrics (ZrO2) x (SiO2)1− x .
220. Enhanced tuning properties of (Ba, Sr)TiO3 bilayer thin films formed by rf magnetron sputtering.
221. Electron‐beam induced phase transformation in β‐Ag2Se thin films
222. Phase Change Behavior in Ag10Ge15Te75 and the Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag10Ge15Te75 Films
223. Charge Trapping Memory Characteristics of p-Si/Ultrathin Al2O3????(?HfO2?)?0.8?(?Al2O3?)?0.2???Al2O3/Metal Multilayer Structure
224. A TiAl2O5 nanocrystal charge trap memory device.
225. Electrical field induced precipitation reaction and percolation in Ag30Ge17Se53 amorphous electrolyte films.
226. Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films.
227. Effects of the substitution of Pb for Ba in (Ba,Sr)TiO3 films on the temperature stability of the tunable properties.
228. Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an n-Type Semiconductor Interlayer
229. A GPU-accelerated package for simulation of flow in nanoporous source rocks with many-body dissipative particle dynamics.
230. High‐Performance Visible‐Light Photodetectors built on 2D‐Nanoplate‐Assembled Large‐Scale BiI3 Films.
231. High‐Performance Organic Field‐Effect Transistor with Matching Energy‐Band Alignment between Organic Semiconductor and the Charge‐Trapping Dielectric.
232. A nonlinear elasto-plastic bond model for the discrete element modeling of woody biomass particles.
233. Light-controlled stateful logic operations using optoelectronic switches based on p-Si/HfO2 heterostructures.
234. Strain tunable magnetism in SnX2 (X = S, Se) monolayers by hole doping.
235. Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.
236. Robust half-metallicity in nonmetal atoms intercalated two-dimensional GaN bilayer.
237. Polarity-dependent effect of humidity on the resistive switching characteristics of nonpolar devices
238. Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer.
239. A Parallel Implicit Reconstructed Discontinuous Galerkin Method for Compressible Flows on Hybrid Grids.
240. On the origins of Mn-dependent magnetic properties of LaFe11.5-xMnxSi1.5 compounds.
241. A reconstructed discontinuous Galerkin method for the compressible Navier-Stokes equations on three-dimensional hybrid grids.
242. Phase Change Behavior in Ag10Ge15Te75and the Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag10Ge15Te75Films
243. Charge Trapping Memory Characteristics of p-Si/Ultrathin Al2O3∕ ( HfO2) 0.8( Al2O3) 0.2∕ Al2O3/Metal Multilayer Structure
244. Reverse scaling of a bonded-sphere DEM model: Formulation and application to lignocellulosic biomass microstructures.
245. Shear rate dependency on flowing granular biomass material.
246. Construction of three-dimensional network morphology titanium matrix composites via adding nano B4C: As-built and heat-treated scenarios.
247. Non-saturating linear magnetoresistance in phase separated amorphous Ag10Ge15Te75 films
248. Benchmark Problems of the Geothermal Technologies Office Code Comparison Study
249. Flow behavior characterization of biomass Feedstocks.
250. Electrochemical reaction in memristor devices in a set state.
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