172 results on '"Haendler, S."'
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2. Hot-carrier evaluation of a zero-cost transistor developed via process optimization in an embedded non-volatile memory CMOS technology
3. Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiCMOS Technology Bipolar Transistors
4. Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs
5. Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators
6. Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs
7. Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature
8. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction
9. Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
10. Unexpected impact of germanium content in SiGe bulk PMOSFETs
11. Characterization and modeling of low frequency noise in CMOS inverters
12. Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs
13. Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below
14. FDSOI devices with thin BOX and ground plane integration for 32 nm node and below
15. Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray
16. SOI Technologies Overview for Low-Power Low-Voltage Radio-Frequency Applications
17. Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing
18. 28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications
19. Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors
20. Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K
21. Localization of 1/f noise sources in Si/SiGe:C HBTs
22. Impact of front oxide quality on transient effects and low-frequency noise in partially and fully depleted SOI N-MOSFETs
23. Reliability of ultra-thin film deep submicron SIMOX nMOSFETs
24. Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors
25. Reliability assessment of 4GSP/s interleaved SAR ADC
26. Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies
27. Enhanced design performance thanks to adaptative body biasing technique in FDSOI technolologies
28. Low Frequency Noise in advanced 55nm BiCMOS SiGeC Heterojunction Bipolar Transistors: Impact of collector doping
29. Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs
30. Measurement and characterization of low frequency noise collector current in 0.13 µm SiGe:C HBTs
31. Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5 μm down to 20 nm
32. Characterization and modeling of low frequency noise in 0.13 µm BiCMOS SiGe: C heterojunction bipolar trasnsistors
33. Study of low frequency noise in advanced SiGe : C heterojunction bipolar transistors
34. 28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications
35. Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs
36. Etude du bruit basse fréquence dans les transistors bipolaires à hétérojonction Si/SiGe:C développés pour des applications MMW et Terahertz
37. Low frequency noise temperature measurements in SiGe:C heterojunction bipolar transistors
38. Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs
39. Measurement and characterization of low frequency noise collector current in 0.13 μm SiGe:C HBTs
40. Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices
41. Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs
42. Low frequency noise statistical characterization of 14nm FDSOI technology node
43. A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives
44. Study of low frequency noise in advanced SiGe:C heterojunction bipolar transistors
45. Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications
46. Impact of low‐frequency noise variability on statistical parameter extraction in ultra‐scaled CMOS devices
47. Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs
48. Planar Bulk+ Technology using TiN/Hf-based gate stack for Low Power Applications
49. Characterization and modeling of low frequency noise in 0.13 µm BiCMOS SiGe:C heterojunction bipolar trasnsistors
50. The impact of high Vth drifts tail and real workloads on SRAM reliability
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