112 results on '"Oomori, Tatsuo"'
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2. Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator
3. Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
4. Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET
5. Modeling of gas-phase and surface reactions in liquid-source chemical-vapor deposition of (Ba,Sr)TiO3 films
6. Chemical Vapor Deposition Technology of (Ba, Sr)TiO3 Thin Films for Gbit-Scale Dynamic Random Access Memories
7. High-temperature operations of rotation angle sensors with spin-valve-type magnetic tunnel junctions
8. Anomalously High Channel Mobility in SiC MOSFET with Al2O3/SiOx/SiC Gate Structure
9. Fabrication and Charactarization of 4H-SiC MOSFET with MOCVD-grown Al2O3 Gate Insulator
10. Comparative Study of Metalorganic Chemical Vapour Deposition of HfO2 and Al2O3 Gate Insulators on SiC for Power MOSFET Applications
11. Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process
12. 高温窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価
13. MOCVD法によるSiC上へのHfO2膜の堆積とHfO2/SiO2/4H-SiC MOSFETの作製
14. Fabrication and Characterization of 4H-SiC MOSFETs with high-temperature nitridation and deposited Al2O3 film
15. Fabrication and Characterization of 4H-SiC MOSFETs with nitrogenation and deposited Al2O3 film
16. Effect of Oxidant in MOCVD-growth of Al2O3 Gate Insurator on 4H-SiC MOSFET Properties
17. Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure
18. 極薄膜酸化膜を用いたAl2O3/SiC MOSFETのチャネル移動度の向上（Ⅱ）
19. 低温堆積Al2O3を用いたSiC MOSFETのアニールによる電気的特性の変化
20. 極薄酸化膜を用いたAl2O3/SiC-MOSFETのチャネル移動度の向上
21. Al2O3/SiC-MOSFETトランジスタ特性のAl2O3堆積温度依存性
22. MOCVD法により形成したAl2O3薄膜をゲート絶縁膜とする4H-SiC MOS-FETの作製と評価
23. MOCVD法による堆積膜／SiCの作製と評価
24. A 5GHz-Band On-Chip Matching CMOS MMIC Front-End
25. Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs
26. Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes
27. Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal–Oxide–Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V
28. SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching
29. Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC
30. 4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
31. PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer
32. Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs
33. Effect of Oxidant in MOCVD-Growth of Al2O3 Gate Insulator on 4H-SiC MOSFET Properties
34. Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current
35. Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure
36. Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC
37. Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
38. TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition
39. High Power-Density SiC Converter
40. Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiC
41. Shuttle Activation Annealing of Implanted Al in 4H-SiC
42. Shuttle Activation Annealing of Implanted Al in 4H-SiC
43. Prevention of Cu degradation using in situ N2 plasma treatment in a dual-damascene process
44. An Electrostatic-Discharge (ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Layer-Extended Transistor (DET) for RF CMOS ICs
45. Measurement of Atomic Incorporation Rates and Modeling of Surface Reactions in (Ba, Sr)TiO3 Films Prepared by a Liquid Source Chemical Vapor Deposition
46. Etching of (Ba,Sr)TiO3 film by chlorine plasma
47. Kinetics of etch products and reaction process in electron cyclotron resonance plasma etching of Si
48. Platinum etching in Ar/O2 mixed gas plasma with a thin SiO2 etching mask
49. Chemical Vapor Deposition Technology of (Ba,Sr)TiO3 Thin Films for Gbit-Scale Dynamic Random Access Memories
50. Novel stacked capacitor technology for 1-Gbit DRAMs with (Ba,Sr)TiO3 thin films
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