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Emerging energy-efficient neuromorphic circuits are based on hardware implementation of artificial neural networks (ANNs) that employ the biomimetic functions of memristors. Specifically, crossbar array memristive architectures are able to perform ANN vector-matrix multiplication more efficiently than conventional CMOS hardware. Memristors with specific characteristics, such as ohmic behavior in all resistance states in addition to symmetric and linear long-term potentiation/depression (LTP/LTD), are required in order to fully realize these benefits. Here, we demonstrate a Li-based composite memristor (LCM) that achieves these objectives. The LCM consists of three phases: Li-doped TiO

Neuromorphic systems, conducting bridging random-access memory, initiated chemical vapor deposition, copolymerization, deep neural networks, and artificial synapses.

Recent advances in flexible and stretchable electronics have led to a surge of electronic skin (e-skin)–based health monitoring platforms. Conventional wireless e-skins rely on rigid integrated circuit chips that compromise the overall flexibility and consume considerable power. Chip-less wireless e-skins based on inductor-capacitor resonators are limited to mechanical sensors with low sensitivities. We report a chip-less wireless e-skin based on surface acoustic wave sensors made of freestanding ultrathin single-crystalline piezoelectric gallium nitride membranes. Surface acoustic wave–based e-skin offers highly sensitive, low-power, and long-term sensing of strain, ultraviolet light, and ion concentrations in sweat. We demonstrate weeklong monitoring of pulse. These results present routes to inexpensive and versatile low-power, high-sensitivity platforms for wireless health monitoring devices.

The unprecedented COVID-19 pandemic at the beginning of 2020 jeopardized the entire world. Meanwhile, the Russia–Saudi Arabia oil war led a crude oil market going out of the frying pan into the fire. This research has two main purposes. First, we investigate structures of the crude oil related exchange-traded products (ETPs) in terms of operation and cost. Second, we analyze the correlation and investment performance of the crude oil related ETPs and West Texas Intermediate spot market. The major findings are as follows: (1) there is a positive correlation between the crude oil spot and the crude oil producing firm, (2) the investment performance of the crude oil related ETPs is inferior to that of the crude oil spot due to the rollover cost, (3) the investment performance of the crude oil related leverage ETNs (Exchange-Traded Notes) or inverse ETPs has deteriorated because their managing structure tracks the daily return which leads to the compounding effects. These empirical results show the characteristics of the gain and loss of the crude oil-related ETPs, which enhance conceptual understanding and offer implications to policymakers and authorities for the efficiency of the alternative investment strategy. © 2021, Korean Securities Association. All rights reserved.

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Summary The realization of lithium-ion battery (LIB) anodes with high volumetric energy densities and minimal Li plating at high rates remains a key challenge for emerging technologies, including electric vehicles and grid-level energy storage. Here, we present graphene-functionalized Li2TiSiO5 (G-LTSO) as a high volumetric energy and power density anode for LIBs. G-LTSO forms a dense electrode structure with electronically and ionically conductive networks that deliver superior electrochemical performance. Upon lithiation, in situ transmission electron microscopy reveals that graphene functionalization yields minimal structural changes compared with pristine LTSO, resulting in high cycling stability. Furthermore, G-LTSO exhibits not only high charge and discharge capacities but also low overpotentials at high rates with minimal voltage fading due to reduced formation of a solid-electrolyte interphase. The combination of highly compacted electrode morphology, stable high-rate electrochemistry, and low operating potential enables G-LTSO to achieve exceptional volumetric energy and power densities that overcome incumbent challenges for LIBs.

Although conventional homoepitaxy forms high-quality epitaxial layers1-5, the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances6-8, is fundamentally unavoidable in highly lattice-mismatched epitaxy9-11. Here, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics.

Complex-oxide materials exhibit a vast range of functional properties desirable for next-generation electronic, spintronic, magnetoelectric, neuromorphic, and energy conversion storage devices1-4. Their physical functionalities can be coupled by stacking layers of such materials to create heterostructures and can be further boosted by applying strain5-7. The predominant method for heterogeneous integration and application of strain has been through heteroepitaxy, which drastically limits the possible material combinations and the ability to integrate complex oxides with mature semiconductor technologies. Moreover, key physical properties of complex-oxide thin films, such as piezoelectricity and magnetostriction, are severely reduced by the substrate clamping effect. Here we demonstrate a universal mechanical exfoliation method of producing freestanding single-crystalline membranes made from a wide range of complex-oxide materials including perovskite, spinel and garnet crystal structures with varying crystallographic orientations. In addition, we create artificial heterostructures and hybridize their physical properties by directly stacking such freestanding membranes with different crystal structures and orientations, which is not possible using conventional methods. Our results establish a platform for stacking and coupling three-dimensional structures, akin to two-dimensional material-based heterostructures, for enhancing device functionalities8,9.

A one-step phase inversion method was applied to fabricate an optimized anode structure for protonic ceramic fuel cells (PCFCs). The phase inversion process utilized raw starting chemicals, instead of crystalline BaCe0.7Zr0.1Y0.1Yb0.1O3-δ (BCZYYb) powder in an energy and time saving process. The resulting large and fingerlike pores exhibited enhanced performance as compared to the disordered pores produced by conventional preparation of anode structures using dry pressing methods. The electrochemical performance of the rational designed anode supported cell were 491, 402, 302 and 200 mW cm−2 at 700, 650, 600 and 550 C, respectively, which was nearly twice than the cell with dry pressing anode. An equivalent circuit modeling method was used to separate the anode polarization resistance from the single cell, confirming that the overall cell performance improvements were attributed to microstructural modifications of the anode by the phase inversion process. The one-step phase inversion method demonstrated great promise for improved processing of fuel cells and separation membranes.

Artificial auxetic sweat ducts enable electronic skin sensors to perform reliable and noninvasive health monitoring over a week., Electronic skins (e-skins)—electronic sensors mechanically compliant to human skin—have long been developed as an ideal electronic platform for noninvasive human health monitoring. For reliable physical health monitoring, the interface between the e-skin and human skin must be conformal and intact consistently. However, conventional e-skins cannot perfectly permeate sweat in normal day-to-day activities, resulting in degradation of the intimate interface over time and impeding stable physical sensing. Here, we present a sweat pore–inspired perforated e-skin that can effectively suppress sweat accumulation and allow inorganic sensors to obtain physical health information without malfunctioning. The auxetic dumbbell through-hole patterns in perforated e-skins lead to synergistic effects on physical properties including mechanical reliability, conformability, areal mass density, and adhesion to the skin. The perforated e-skin allows one to laminate onto the skin with consistent homeostasis, enabling multiple inorganic sensors on the skin to reliably monitor the wearer’s health over a period of weeks.

With the advent of artificial intelligence (AI), memristors have received significant interest as a synaptic building block for neuromorphic systems, where each synaptic memristor should operate in an analog fashion, exhibiting multilevel accessible conductance states. Here, we demonstrate that the transition of the operation mode in poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based flexible memristor from conventional binary to synaptic analog switching can be achieved simply by reducing the size of the formed filament. With the quantized conductance states observed in the flexible pV3D3 memristor, analog potentiation and depression characteristics of the memristive synapse are obtained through the growth of atomically thin Cu filament and lateral dissolution of the filament via dominant electric field effect, respectively. The face classification capability of our memristor is evaluated via simulation using an artificial neural network consisting of pV3D3 memristor synapses. These results will encourage the development of soft neuromorphic intelligent systems.

Metal fluorides usually have a large electronegativity and are promising electrode materials for high-power lithium-ion batteries. However, like other conversion-reaction-based materials, large vol...

It is so important that the bonding technology between tungsten and dissimilar metals for the PFC of ITER and DEMO, KSTAR. The development of tungsten brazing technology was first launched for the KSTAR PFC. Flat type tungsten block was brazed on CuCrZr in vacuum at a temperature of 980 °C for 30 min using silver free brazing alloy. The brazing filler is a 0.05 mm thick-plate made of a Ni-Cu-Mn alloy. Tungsten brazed mock-ups with a swirl and smooth tube were tested at an electron beam facility, KoHLT-EB(Korea heat load test facility-Electron Beam) in KAERI. The high heat flux test was performed for tungsten brazed mock-ups with a swirl and smooth tube under the heat flux of about 5.4–8 MW/m2. The test results show there are no delamination or failures at the bonding joints during and after all the heat flux test. According to the thermal hydraulic analysis and results of heat flux test, the cooling effect of the smooth tube was better than one of the swirl tube at the conditions of the coolant of about 0.35 MPa and the heat flux of over about 5 MW/m2.

Exchange coupling between hard and soft magnetic materials at the nanoscale exhibits novel or improved physical properties for energy and data storage applications. Recently, exchange coupling has also been explored in core/shell magnetic nanostructures (MNS) composed of hard and soft magnetic spinel ferrites, but applications have been limited in biomedicine due to the presence of “toxic” cobalt based ferrites as hard magnetic component. We report core/shell MNS where both core and shell components are soft magnetic ferrites (Fe3O4, MnFe2O4, and Zn0.2Mn0.8Fe2O4) and show that exchange coupling still exists due to the difference in their anisotropy. The physical properties (saturation magnetization, susceptibility, anisotropy, r2 relaxivity, and specific absorption rate) of core/shell MNS are compared with the same size single phase counterparts which excludes any size dependent effect and gives the direct effect of exchange coupling. After optimization of core and shell components and their proportions, ...

Understanding the electronic transport of monolayer transition metal dichalcogenides (TMDs) and their heterostructures is complicated by the difficulty in achieving electrical contacts that do not perturb the material. Typically, metal deposition on monolayer TMDs leads to hybridization between the TMD and the metal, which produces Schottky barriers at the metal/semiconductor interface. In this work, we apply the recently reported hexagonal boron nitride (h-BN) tunnel contact scheme to probe the junction characteristics of a lateral TMD heterostructure grown via chemical vapor deposition. We first measure the electronic properties across the junction before elucidating optoelectronic generation mechanisms via scanning photocurrent microscopy. We find that the rectification ratio measured using the encapsulated, tunnel contact scheme is almost 2 orders of magnitude smaller than that observed via conventional metal contact geometry, which implies that the metal/semiconductor Schottky barriers play large roles in this aspect. Furthermore, we find that both the photovoltaic as well as hot carrier generation effects are dominant mechanisms driving photoresponse, depending on the external biasing conditions. This work is the first time that this encapsulation scheme has been applied to lateral heterostructures and serves as a reference for future electronic measurements on this material. It also simultaneously serves as a framework to more accurately assess the electronic transport characteristics of 2D heterostructures and better inform future device architectures.

Remote epitaxy is a recently discovered type of epitaxy, wherein single-crystalline thin films can be grown on graphene-coated substrates following the crystallinity of the substrate via remote interaction through graphene. Although remote epitaxy provides a pathway to form freestanding membranes by controlled exfoliation of grown film at the graphene interface, implementing remote epitaxy is not straightforward because atomically precise control of interface is required. Here, we unveil the role of the graphene–substrate interface on the remote epitaxy of GaAs by investigating the interface at the atomic scale. By comparing remote epitaxy on wet-transferred and dry-transferred graphene, we show that interfacial oxide layer formed at the graphene–substrate interface hinders remote interaction through graphene when wet-transferred graphene is employed, which is confirmed by an increase of interatomic distance through graphene and also by the formation of polycrystalline films on graphene. On the other hand, when dry-transferred graphene is employed, the interface is free of native oxide, and single-crystalline remote epitaxial films are formed on graphene, with the interatomic distance between the epilayer and the substrate matching with the theoretically predicted value. The first atomic layer of the grown film on graphene is vertically aligned with the top layer of the substrate with these atoms having different polarities, substantiating the remote interaction of adatoms with the substrate through graphene. These results directly show the impact of interface properties formed by different graphene transfer methods on remote epitaxy.

Macrophages play crucial roles in various immune-related responses, such as host defense, wound healing, disease progression, and tissue regeneration. Macrophages perform distinct and dynamic functions in vivo, depending on their polarization states, such as the pro-inflammatory M1 phenotype and pro-healing M2 phenotype. Remote manipulation of the adhesion of host macrophages to the implants and their subsequent polarization in vivo can be an attractive strategy to control macrophage polarization-specific functions but has rarely been achieved. In this study, we grafted RGD ligand-bearing superparamagnetic iron oxide nanoparticles (SPIONs) to a planar matrix via a long flexible linker. We characterized the nanoscale motion of the RGD-bearing SPIONs grafted to the matrix, in real time by in situ magnetic scanning transmission electron microscopy (STEM) and in situ atomic force microscopy. The magnetic field was applied at various oscillation frequencies to manipulate the frequency-dependent ligand nano-oscillation speeds of the RGD-bearing SPIONs. We demonstrate that a low oscillation frequency of the magnetic field stimulated the adhesion and M2 polarization of macrophages, whereas a high oscillation frequency suppressed the adhesion of macrophages but promoted their M1 polarization, both in vitro and in vivo. Macrophage adhesion was also temporally regulated by switching between the low and high frequencies of the oscillating magnetic field. To the best of our knowledge, this is the first demonstration of the remote manipulation of the adhesion and polarization phenotype of macrophages, both in vitro and in vivo. Our system offers the promising potential to manipulate host immune responses to implanted biomaterials, including inflammation or tissue reparative processes, by regulating macrophage adhesion and polarization.

Cellular adhesion is regulated by the dynamic ligation process of surface receptors, such as integrin, to adhesive motifs, such as Arg-Gly-Asp (RGD). Remote control of adhesive ligand presentation using external stimuli is an appealing strategy for the temporal regulation of cell-implant interactions in vivo and was recently demonstrated using photochemical reaction. However, the limited tissue penetration of light potentially hampers the widespread applications of this method in vivo. Here, we present a strategy for modulating the nanoscale oscillations of an integrin ligand simply and solely by adjusting the frequency of an oscillating magnetic field to regulate the adhesion and differentiation of stem cells. A superparamagnetic iron oxide nanoparticle (SPION) was conjugated with the RGD ligand and anchored to a glass substrate by a long flexible poly(ethylene glycol) linker to allow the oscillatory motion of the ligand to be magnetically tuned. In situ magnetic scanning transmission electron microscopy and atomic force microscopy imaging confirmed the nanoscale motion of the substrate-tethered RGD-grafted SPION. Our findings show that ligand oscillations under a low oscillation frequency (0.1 Hz) of the magnetic field promoted integrin-ligand binding and the formation and maturation of focal adhesions and therefore the substrate adhesion of stem cells, while ligands oscillating under high frequency (2 Hz) inhibited integrin ligation and stem cell adhesion, both in vitro and in vivo. Temporal switching of the multimodal ligand oscillations between low- and high-frequency modes reversibly regulated stem cell adhesion. The ligand oscillations further induced the stem cell differentiation and mechanosensing in the same frequency-dependent manner. Our study demonstrates a noninvasive, penetrative, and tunable approach to regulate cellular responses to biomaterials in vivo. Our work not only provides additional insight into the design considerations of biomaterials to control cellular adhesion in vivo but also offers a platform to elucidate the fundamental understanding of the dynamic integrin-ligand binding that regulates the adhesion, differentiation, and mechanotransduction of stem cells.

Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic (MAGIC) architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for batterypowered flexible electronic systems.

In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO 2 thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO 2 thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

One of the well-known pathways toward low power consuming chemoresistive gas sensors is the utilization of 2-dimensional materials. Especially, transition metal dichalcogenides (TMDs), which are usually atomically thin semiconductors, have a notable characteristic of their highly reactive edge sites. The edge sites of TMDs having high d-orbital electron density can serve as highly favorable chemically active sites for direct interaction with target gas molecules. In this study, WS2 was synthesized on highly porous SiO2 nanorods template to have numerous edge-exposed WS2 flakes in a limited active area taking advantage of 1-dimensional nanostructures with extremely high surface-to-volume ratio. The fabricated WS2 on 1D nanostructures exhibited a gas response of 151.2 % toward 5 ppm NO2, which has not been reported in performance-wise at room temperature to the best of the author’s knowledge. Density functional theory calculations theoretically supported the highly sensitive and selective NO2 detection with a theoretical detection limit of 13.726 ppb.

The tungsten (W) brazed flat type mock-up which consists of W, OFHC-Cu (oxygen-free high conductive copper) and CuCrZr alloy has been designed for KSTAR divertor in preparation for KSTAR upgrade with 17 MW heating power. For verification of the W brazed mock-up, the high heat flux test is performed at KoHLT-EB (Korea High Heat Load Test Facility-Electron Beam) in KAERI (Korea Atomic Energy Research Institute). Three mock-ups are tested for several thousand thermal cycles with absorbed heat flux up to 5 MW/m 2 for 20 s duration. There is no evidence of the failure at the bonding joints of all mock-ups after HHF test. Finite element analysis (FEA) is performed to interpret the result of the test. As a result, it is considered that the local area in the water is in the subcooled boiling regime.

Electrically insulating graphene oxide with various oxygen-functional groups is a novel material as an active layer in resistive switching memories via reduction process. Although many research groups have reported on graphene oxide-based resistive switching memories, revealing the origin of conducting path in a graphene oxide active layer remains a critical challenge. Here nanoscale conductive graphitic channels within graphene oxide films are reported using a low-voltage spherical-aberration-corrected transmission electron microscopy. Simultaneously, these channels with reduced graphene oxide nanosheets induced by the detachment of oxygen groups are verified by Raman intensity ratio map and conductive atomic force microscopy. It is also clearly revealed that Al metallic protrusions, which are generated in the bottom interface layer, assist the local formation of conductive graphitic channels directly onto graphene oxide films by generating a local strong electric field. This work provides essential information for future carbon-based nanoelectronic devices.

The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) V(-1) s(-1), and a bias stability of ΔVTH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.

This paper provides research results of a study to assess the driver performance levels of a 2+1 road, a special type of road involving intermediate cross section that is applied where a four-lane roadway construction is unjustifiable and the use of a two-lane road design may not provide the desired level of mobility. Despite increased driver safety, the use of the 2+1 road involves a problem that the South Korean government cannot assess the mobility effects of 2+1 roads, because the current Korean Highway Capacity Manual lacks the level of service procedure for 2+1 roads. Hence, research is required to provide potential measures of effectiveness for describing traffic flows in 2+1 roads and establish a reliable level of service analysis procedure. To address this issue, we applied the following approach: (1) existing research concerning 2+1 road design and flow performance was reviewed; (2) a field study was conducted in 2+1 roads with video cameras and traffic detectors to investigate traffic flow conditions; (3) candidate measures of effectiveness for describing traffic flow in 2+1 roads were identified based on field study results as well as TWOPAS simulation efforts; and (4) an analysis procedure applicable to determine levels of traffic flow service for 2+1 roads was proposed. We also examined how our proposed procedure would perform based on a case study. It was found that the percent time spent following would represent the most appropriate measures of effectiveness and that realistic output may be produced with our proposed procedure.