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Pointed magnetic elements are introduced as an improvement upon rectangular strips currently employed in composite element magnetic barcodes. The coercivity of these elements, as measured using the magneto-optic Kerr effect, is found to strictly adhere to a single power law relationship with the element width, where the power law exponent is dependent on the length of the pointed region and takes values between − 0.98 and − 0.91. The steeper gradients here, along with the absence of the crossover region seen in rectangular devices, present these structures as a strict improvement in terms of potential device applications. These improvements are found to be present for all structures where the pointed region is as long as, or longer than, the magnetic element is wide. The remanent magnetization configuration, imaged using photo-emission microscopy with contrast from x-ray magnetic circular dichroism (XMCD-PEEM), is compared to the results of micromagnetic simulations. It is found to cant inward in the pointed section of the strip, aligning with the edges of the point, pinning the magnetization and giving a consistent magnetization reversal behavior for all element widths investigated. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) titanium disulfide (TiS 2) is the lightest transition-metal dichalcogenide (TMD). It exhibits relatively better adsorption and diffusion of sodium (Na) and potassium (K) ions than other TMDs, such as MoS 2 (molybdenum disulfide) and ReS 2 (rhenium disulfide), making it a promising anode material for alkali-ion batteries. Previous studies have found that doping significantly enhances the adsorption and diffusion capabilities of 2D TMDs. For the first time, this work reports the adsorption of Na and K ions on doped TiS 2 monolayers using first-principles calculations, where the Ti atom is substituted by 3d-transition metals, including iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu). Metal-atom doping induces remarkably stronger binding of alkali ions on the surface of TiS 2 , with adsorption energies ranging from − 2.07 to − 2.48 eV for Na and − 2.59 to − 3.00 eV for K. The diffusion barrier energies for alkali ions decrease in the proximity of the doping site and increase as the ions travel away from the doping site for Fe-, Co-, and Ni-doped TiS 2. The average open circuit voltage increases dramatically when Na ions are adsorbed on Fe-doped TiS 2 (by 62%) and Co-doped TiS 2 (by 61%), while K ions result in a moderate improvement of 9% and 8%, respectively. These findings suggest that metal-atom doping considerably improves the electrochemical properties of 2D TiS 2 , potentially enabling its use as anode materials in Na- and K-ion batteries. [ABSTRACT FROM AUTHOR]

The thermophysical properties of liquid Zr–V alloys covering a whole composition range were systematically measured by an electrostatic levitation technique. A series of maximum undercoolings from 150 to 386 K (0.2 TL) was achieved for 11 different liquid alloys under containerless state and radiative cooling conditions, where Zr83.5V16.5 and Zr20V80 alloys displayed the strongest undercooling ability. The densities of liquid Zr–V alloys were measured over a wide temperature range from overheated to undercooled states, and the results exhibited a linear dependence on temperature for all 11 compositions. Two typical solidification pathways were observed for hypoeutectic alloys. Except for a slowing down of decreasing tendency near a eutectic Zr57V43 alloy, the liquid densities of Zr–V alloys almost decrease linearly with increasing V content. Accordingly, the thermal expansion coefficients of Zr–V alloys were also derived from containerless measurements, and they showed an increasing tendency with V content. Since thermal radiative dominated the heat transfer process, the ratio of isobaric specific heat to hemispherical emissivity was directly deduced from the thermal balance equation, leading to a quadratic relationship with temperature. It was found that the increase of V content enhanced the ability of radiative heat dissipation below 16.5 at. % V content. [ABSTRACT FROM AUTHOR]

In this paper, mesoporous nitrocellulose (NC)/graphene oxide (GO) composite aerogel is manufactured by a sol-gel method followed by supercritical carbon dioxide drying. The effects of GO on the microstructure, decomposition, and thermal conductivity are studied. The laser absorption, laser ignition property, and combustion performance of NC aerogel and NC/aerogel are also investigated. The results indicate that NC/GO aerogel is established by the combination of NC nano-fibers and GO sheets, and the aerogels are mesoporous with average pore size at 40 nm. Moreover, the thermal stability of aerogels is decreased by the nano-structure of NC, and the laser absorption is significantly increased by the nano-porous structure and the adoption of GO. In addition, the laser ignition and combustion efficiency are also greatly improved by the nano-porous aerogel structure and the incorporation of evenly uniformly dispersed GO sheets with high photothermal conversion efficiency and thermal conductivity. Laser ignition times reduced by 73.7% and 99.6% are obtained, and flame propagation rates up to 4.7 and 12.3 times are observed for NC aerogel and NC/5 wt. % GO aerogel, respectively. [ABSTRACT FROM AUTHOR]

The efficiency of organic light-emitting diodes that utilize the principle of thermally activated delayed fluorescence (TADF) depends sensitively on the host material in which the TADF emitter molecules (guests) are embedded. Potential loss processes are "deconfinement," the transfer of excitons from the guest to the host, and "dissociation," the formation of intermolecular charge-transfer states. We investigate how both processes can be suppressed by studying the photoluminescence efficiency, emission spectrum, and time-resolved emission intensity of eight thin-film systems in which 5 mol. % of the sky-blue TADF emitter 4-carbazolyl-methylphthalimide (abbreviated here as CzPIMe) is embedded in various host materials. Deconfinement is found to be entirely suppressed if the triplet energy of the host is 0.25 eV or more above that of the guest. For systems allowing for deconfinement, the dependence on the energy difference is consistent with a recent theoretical analysis [C. Hauenstein et al., J. Appl. Phys. 128, 075501 (2020)]. Dissociation, due to hole transfer to a host molecule, is found to be suppressed if the host's highest occupied molecular orbital energy is not more than about 0.2 eV higher than that of the guest. Otherwise, we observe an efficiency loss, a spectral redshift, and the disappearance of distinct prompt and delayed emission regimes. A comprehensive rate-equation model is developed from which we study the sensitivity of these observations to the energy level structure, the intermolecular interaction rates, and the photophysical rates that follow from a fit to the experimental data for the CzPIMe:TCTA[ tris (4 - carbazoyl - 9 - ylphenyl) amine ] system. [ABSTRACT FROM AUTHOR]

In this study, a 300 °C-annealed 3 × 4 V/ZnO multilayer structure demonstrates the lowest resistivity (3.82 × 10−3 Ω cm) and the highest mobility (18 cm2/V s) among the studied V/ZnO multilayer structures. By measuring the energy bandgap (Eg), work function (Φ), and electron affinity (χ) by ultraviolet photoelectron spectroscopy and photoluminescence analysis, the corresponding energy band diagram at the ZnVxOy/ZnO interface can be constructed. A potential is observed at the ZnVxOy/ZnO interface, which induces the two-dimensional electron gas (2DEG) effect, and this is attributed to the high-mobility conduction path. The potential well directly relates to the Φ difference between the ZnO and ZnVxOy layers, which is determined to be 0.22, 0.46, and −0.1 eV for the as-deposited, 300 °C-annealed, and 500 °C-annealed V/ZnO multilayer structures, respectively. The 300 °C-annealed V/ZnO multilayer structure could possibly have the largest depth in the potential well. This supports the 2DEG mechanism for the high mobility of the 300 °C-annealed V/ZnO multilayer structure. [ABSTRACT FROM AUTHOR]

We identify room-temperature converse magnetoelectric effects (CMEs) that are non-volatile by using a single-crystal substrate of PMN–PT (001)pc (pc denotes pseudocubic) to impart voltage-driven strain to a polycrystalline film of Ni. An appropriate magnetic-field history enhances the magnetoelectric coefficient to a near-record peak of ∼10−6 s m−1 and permits electrically driven magnetization reversal of substantial net magnetization. In zero magnetic field, electrically driven ferroelectric domain switching produces large changes of in-plane magnetization that are non-volatile. Microscopically, these changes are accompanied by the creation and destruction of magnetic stripe domains, implying the electrical control of perpendicular magnetic anisotropy. Moreover, the stripe direction can be rotated by a magnetic field or an electric field, the latter yielding the first example of electrically driven rotatable magnetic anisotropy. The observed CMEs are associated with repeatable ferroelectric domain switching that yields a memory effect. This memory effect is well known for PMN–PT (110)pc but not PMN–PT (001)pc. Given that close control of the applied field is not required as for PMN–PT (110)pc, this memory effect could lead the way to magnetoelectric memories based on PMN–PT (001)pc membranes that switch at low voltage. [ABSTRACT FROM AUTHOR]

The synergy between catalysis and plasma chemistry often enhances the yield of chemical reactions in plasma-driven reactors. In the case of CO2 splitting into CO and O2, no positive synergistic effect was observed in earlier studies with plasma reactors, except for dielectric barrier discharges, that do not have a high yield and a high efficiency. Here, we demonstrate that introducing metal meshes into radio frequency-driven plasma reactors increases the relative reaction yield by 20%–50%, while supported metal oxide catalysts in the same setups have no effect. We attribute this to the double role of the metal mesh, which acts both as a catalyst for direct CO2 dissociation as well as for oxygen recombination. [ABSTRACT FROM AUTHOR]

Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy metal bilayers and non-centrosymmetric antiferromagnets. In such cases, nonmagnetic resistivity changes may dominate over signatures of antiferromagnetic switching. We report systematic measurements of the current-induced changes of the transverse and longitudinal resistance of Pt and Pt/NiO layers deposited on insulating substrates, namely, Si / SiO 2 , Si / Si 3 N 4 , and Al 2 O 3. We identify the range of pulse amplitude and length that can be used without affecting the resistance and show that it increases with the device size and thermal diffusivity of the substrate. No significant difference is observed in the resistive response of Pt and NiO/Pt devices, thus precluding evidence on the switching of antiferromagnetic domains in NiO. The variation of the transverse resistance is associated to a thermally activated process in Pt that decays following a double exponential law with characteristic timescales of a few minutes to hours. We use a Wheatstone bridge model to discriminate between positive and negative resistance changes, highlighting competing annealing and electromigration effects. Depending on the training of the devices, the transverse resistance can either increase or decrease between current pulses. Furthermore, we elucidate the origin of the nonmonotonic resistance baseline, which we attribute to training effects combined with the asymmetric distribution of the current. These results provide insight into the origin of current-induced resistance changes in metal layers and a guide to minimize nonmagnetic artifacts in switching experiments of antiferromagnets. [ABSTRACT FROM AUTHOR]

The transmission properties for square potential barriers have been investigated and compared from graphene to a dice lattice via a variable coupling parameter. There are two limiting cases of pseudospin 1/2 and 1, respectively. The perfect Klein tunneling has been obtained for all parameter conditions. With the increase of the coupling parameter, the tunneling probability increases at oblique incidence. The tunneling shows little dependence on the number of barriers for the dice model. However, the barrier number is an effective factor to tune the transmission feature in graphene. The tunneling peaks can be analyzed from the energy band structure in the expanded periodic potential system and the wave function distribution in the well/barrier regions. The present findings are useful in the development of electronic devices based on quantum transport property with massless pseudospin particles. [ABSTRACT FROM AUTHOR]

There has been steady effort to advance Ga-free InAs1−xSbx/InAs1−ySby superlattice (SL) materials for long-wavelength infrared (LWIR) detector applications. Although Ga-free SLs grown pseudomorphically on GaSb wafers work well in mid-wavelength applications, most LWIR Ga-free SL designs suffer from relatively low optical absorption and poor hole transport. One of the main problems in using the Ga-free material system for LWIR applications is a tremendous constraint on band engineering imposed by matching the SL lattice parameter to the lattice constant of conventional GaSb substrates. In this work, we propose several lattice engineered short-period LWIR InAs1−xSbx/InAs1−ySby SL designs that can enhance optical absorption and vertical hole mobility at an 11 μm cutoff wavelength. We also performed test growths of the designed structures on lattice-matched homogeneous buffer layers on GaAs wafers. [ABSTRACT FROM AUTHOR]

Understanding of the thermonuclear burn in an inertial confinement fusion implosion requires knowledge of the local deuterium–tritium (DT) fuel density. Neutron imaging of the core now provides this previously unavailable information. Two types of neutron images are required. The first is an image of the primary 14-MeV neutrons produced by the D + T fusion reaction. The second is an image of the 14-MeV neutrons that leave the implosion hot spot and are downscattered to lower energy by elastic and inelastic collisions in the fuel. These neutrons are measured by gating the detector to record the 6–12 MeV neutrons. Using the reconstructed primary image as a nonuniform source, a set of linear equations is derived that describes the contribution of each voxel of the DT fuel region to a pixel in the downscattered image. Using the measured intensity of the 14-MeV neutrons and downscattered images, the set of equations is solved for the density distribution in the fuel region. The method is validated against test problems and simulations of high-yield implosions. The calculated DT density distribution from one experiment is presented. [ABSTRACT FROM AUTHOR]

A nonlinear thermodynamic analysis is adopted to study the electrocaloric effect of B a x S r 1 − x Ti O 3 (BST) solid solutions. The results reveal that the location of maximum adiabatic temperature change Δ T can be shifted from a high temperature to room temperature via tuning chemical composition x. Comparing the electrocaloric properties of BST with those values reported in other electrocaloric materials, it is found that BST with x = 0.7 shows a large electrocaloric response over a broad temperature range near room temperature and possesses a large electrocaloric strength Δ T / Δ E ∼ 1.978 × 10 − 6 K m/V due to a significant change in polarization with respect to temperature. This suggests that BST with high electrocaloric performance has potential for practical cooling applications. [ABSTRACT FROM AUTHOR]

In this work, we used a combination of photoluminescence (PL), high resolution X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) techniques to investigate material quality and structural properties of MBE-grown InGaAsBi samples (with and without an InGaAs cap layer) with targeted bismuth composition in the 3%–4% range. XRD data showed that the InGaAsBi layers are more homogeneous in the uncapped samples. For the capped samples, the growth of the InGaAs capped layer at higher temperature affects the quality of the InGaAsBi layer and bismuth distribution in the growth direction. Low-temperature PL exhibited multiple emission peaks; the peak energies, widths, and relative intensities were used for comparative analysis of the data in line with the XRD and RBS results. RBS data at a random orientation together with channeled measurements allowed both an estimation of the bismuth composition and analysis of the structural properties. The RBS channeling showed evidence of higher strain due to possible antisite defects in the capped samples grown at a higher temperature. It is also suggested that the growth of the capped layer at high temperature causes deterioration of the bismuth-layer quality. The RBS analysis demonstrated evidence of a reduction of homogeneity of uncapped InGaAsBi layers with increasing bismuth concentration. The uncapped higher bismuth concentration sample showed less defined channeling dips suggesting poorer crystal quality and clustering of bismuth on the sample surface. [ABSTRACT FROM AUTHOR]

This paper presents the influence of electron elastic scattering models, electron thermalization models, and chemical parameters on Geant4-DNA simulations of liquid water radiolysis under mega-electron-volt electron irradiation. The radiochemical yields are simulated using a new Geant4-DNA example. In particular, the influence of the new elastic scattering model recently developed is presented as well as the influence of improved electron thermalization models. The influence of a new chemistry constructor using parameters of another Monte Carlo track structure code is also described. The results calculated using these different models are compared with each other and with experimental data. For sub-mega-electron-volt electron simulations, the combination of the "G4EmDNAPhysics_option2" physics constructor with the recently developed elastic scattering model, the Meesungnoen electron thermalization model, and the "G4EmDNAChemistry_option1" chemistry constructor is recommended. [ABSTRACT FROM AUTHOR]

Resistive random access memories with self-rectifying behaviors, in which the sneak-path issue in passive crossbar arrays can be alleviated without additional access devices, have been investigated recently. The applications of p-type transparent oxide semiconductors as a memory medium will pave the way for realizing all-transparent memories and integrating on the complementary metal-oxide-semiconductor devices. Here, Ag-based p-type delafossite AgCr 1 − x Mg x O 2 thin films were prepared onto n-Si wafers to investigate the resistive switching (RS) performance. Bipolar RS with self-rectifying behaviors were observed in the Au / AgCr 0.92 Mg 0.08 O 2 / n − Si sandwich structure, showing improved rectification ratio, On/Off ratio, and switching durability. The change of the oxygen vacancy concentration resulting from Mg doping plays a key role in determination of the RS. The intrinsic rectifying behavior in the low resistance state is attributed to the existence of a Schottky-like barrier in the AgCr 1 − x Mg x O 2 / n − Si p-n heterojunction. The RS behavior originates from the modification of the barrier, which is induced by the trapping/detrapping of charge carriers in oxygen vacancies at the interface. The results will provide novel RS devices based on p-type transparent delafossite thin films with a self-rectifying feature. [ABSTRACT FROM AUTHOR]

The InAlN alloy system has bandgap energies that span the entire visible range and is a promising candidate for bandgap engineering. To facilitate bandgap engineering, the bandgap bowing for the entire composition range must be well characterized. In rich InxAl1−xN (x > 0.60), films were grown via plasma assisted molecular beam epitaxy on freestanding GaN substrates. The InxAl1−xN film compositions were determined using high resolution X-ray diffraction. On-axis 0002 ω-2θ scans were used to determine the c spacing of the films, reciprocal space maps of the 1 ¯ 015 peaks were used to determine that the films were completely relaxed, and the film compositions were calculated from that information assuming Vegard's law. The bandgaps were independently measured using absorbance spectroscopy and fitting to the linear region of a Tauc plot (dependence of α2 hν on hν) as determined by interpolating the second derivative of the data and selecting a region of low curvature. Compared with the literature, the data were fit to a composition-independent bandgap bowing model, and a bowing parameter of b = 4.0 ± 0.2 eV was calculated, which is consistent with previous results. [ABSTRACT FROM AUTHOR]

A calculation is presented for the direct conversion of a measured luminescence signal to the implied open circuit voltage. The effects of re-absorption, spectral dependence, and interference with front and back interfaces are all included, so long as the optical properties of the structure are known. The method is validated through a comparison of the terminal open-circuit voltage with the photoluminescence intensity of Cu(In,Ga)Se2 solar cells, each as a function of illumination intensity. [ABSTRACT FROM AUTHOR]

This paper presents the calculation of new elastic scattering cross sections for the simulation of electron interactions in liquid water. The calculations are based on the "ELastic Scattering of Electrons and Positrons by neutral Atoms" code, which adopts a Dirac partial wave analysis. A Muffin-tin potential was used in order to account for the liquid-phase of water, and the optical parameters of the correlation-polarization and the inelastic absorption potentials were optimized against vapour-phase water data. The differential and total elastic scattering cross sections calculated in the present work show a global agreement with the experimental data. The impact of these elastic scattering cross sections on the transport of electrons in liquid water was evaluated by track-structure simulations of range, dose-point-kernel, microdosimetric spectra, and ionization clustering using the Geant4-DNA simulation toolkit. The results are compared against those obtained with the elastic scattering models already available in Geant4-DNA and are discussed. [ABSTRACT FROM AUTHOR]

The magnetic and magnetotransport properties of Ni80Fe20/La0.7Sr0.3MnO3 (NiFe/LSMO) bilayers were investigated after bombarding the LSMO surface with low-energy Ar+ or O2+/Ar+ ion beams before the growth of the top NiFe layer. A variety of magnetic properties are revealed, including an asymmetric two-stepped hysteresis loop with an exchange bias loop shift, and alternatively, a symmetric two-stepped hysteresis loop with an enhanced coercivity. Polarized neutron reflectometry measurements provide details of the magnetic depth profile and interface layer magnetism at different temperatures. The LSMO surface modifications determine a complex magnetic and electric NiFe/LSMO interface having a strong effect on the magnetoresistance of the bilayer. Surface engineering based on ion beam bombardment is presented as a promising technique for optimizing the electronic and magnetic properties of NiFe/LSMO junctions for future device applications. [ABSTRACT FROM AUTHOR]

Abrasions of the probe apexes always happen during piezoresponse force microscopy (PFM) experiments, resulting in variation of distribution of the electroelastic field in piezoelectric materials, which finally influences the spatial resolution of PFM. In this paper, we find the effective point charges coupled with the piezoelectric coefficients for three probe models including the modified point charge model, the sphere-plane model, and the disk-plane model, through the fully-coupled electromechanical method. It is proved that the wear of the probe apex induces spreading of electroelastic field from the contact area to the surrounding area, and the electroelastic fields computed using the coupled method are much more localized than that computed by the decoupled method. The piezoresponses underneath the probe apexes have no correlation with the geometries of the probes, yet strongly depend on the choices of calculation methods. This analysis paves new ways for studies of the piezoresponses in complicated domain structures in ferroelectric materials. [ABSTRACT FROM AUTHOR]

The Ag sulfurization resistance of the pure Ag film and four Ag-based alloy films was evaluated by the reflectance decay after the Ag sulfurization test. Among all Ag-based alloy films, the In alloying solute in the Ag-In alloy film shows the best resistance to the Ag sulfurization. Using x-ray photoelectron spectroscopy analysis, the chemical state of the alloying solutes in the Ag-based alloy films was examined. It is found that, with being alloyed in the Ag matrix phase, the 3d5/2 core-level peak positions of the alloying solutes (In, Sn, and Pd) shift toward the lower binding energy region, which is defined as a negative chemical shift. The chemical shifts of In, Sn, and Pd alloying solutes are –0.31 eV, –0.23 eV, and –0.2 eV, respectively. The absolute value of the negative chemical shift represents the tendency of Ag atoms losing valence electrons to the alloying solutes. As the Ag atoms lose valence electrons to the alloying solutes, the Ag atoms have a less tendency to provide the valence electrons to form covalent bonding with S atoms, which suppresses the Ag sulfurization reaction (2Ag + S → Ag2S). Therefore, the larger the absolute value of the negative chemical shift, the higher is the reflectance decay (lesser Ag sulfurization resistance). [ABSTRACT FROM AUTHOR]

Room-temperature non-radiative recombination is studied at single dislocations in Ga0.5In0.5P quantum wells grown on metamorphic templates using cathodoluminescence and electron channeling contrast imaging. An analysis of the light emission intensity profiles around single dislocations reveals that the average recombination strength of a dislocation decreases by a factor of four and seven as a result of decreasing growth temperature of the GaInP quantum well from 725 to 675 and 625 °C, respectively. This reduction occurs despite little change in the diffusion length, precluding the prospect of inducing carrier localization by ordering and phase separation in GaInP at lower growth temperatures. These observations are rationalized by the premise that point defects or impurities are largely responsible for the recombination activity of dislocations, and the extent of decoration of the dislocation core decreases with temperature. Preliminary evidence for the impact of the Burgers vector is also presented. The lowest growth temperature, however, negatively impacts light emission away from dislocations. Carrier recombination in the bulk and at dislocations needs to be considered together for metamorphic devices, and this work can lead to new techniques to limit non-radiative recombination. [ABSTRACT FROM AUTHOR]

The refractive index of LiNiO2 thin films is complex and exhibits both dielectric and metallic properties. With LiNiO2 thin films coated on or inserted in photonic crystals (PCs), it is possible to enhance the absorptance in the designed (AB)nLiNiO2(BA)m PC structures. One-way absorption in the photonic bandgap of (AB) PCs has been observed via changing the optical transmitting direction. The positions, width, and strength of the absorption peaks depend on the thickness of the LiNiO2 films, the incident angles, and the transverse electric/transverse magnetic modes. The photonic band structure can be employed to determine the allowed and forbidden photonic modes and the related optical properties for (AB) PC and (AB)nLiNiO2 PCs. These novel absorption characteristics can enrich the optoelectric properties of LiNiO2 thin films. [ABSTRACT FROM AUTHOR]

Neutron, gamma-ray, and x-ray imaging are important diagnostic tools at the National Ignition Facility (NIF) for measuring the two-dimensional (2D) size and shape of the neutron producing region, for probing the remaining ablator and measuring the extent of the DT plasmas during the stagnation phase of Inertial Confinement Fusion implosions. Due to the difficulty and expense of building these imagers, at most only a few two-dimensional projections images will be available to reconstruct the three-dimensional (3D) sources. In this paper, we present a technique that has been developed for the 3D reconstruction of neutron, gamma-ray, and x-ray sources from a minimal number of 2D projections using spherical harmonics decomposition. We present the detailed algorithms used for this characterization and the results of reconstructed sources from experimental neutron and x-ray data collected at OMEGA and NIF. [ABSTRACT FROM AUTHOR]

The magneto-Seebeck (MS) effect, which is also called magneto-thermo-power, was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in the parallel state were larger than those in the antiparallel state, and the MS ratio defined as (SAP -SP)/SP could reach –9% in our case. The MS effect originated not only from trivial giant magnetoresistance but also from spin current generated due to spin-polarized thermoelectric conductivity of ferromagnetic materials and subsequent modulation of the spin current by different spin configurations in spin valves. A simple Mott two-channel model reproduced a –11% MS effect for the Co/Cu/Co spin valves, qualitatively consistent with our observations. The MS effect could be applied for simultaneously sensing the temperature gradient and the magnetic field and also be possibly applied to determine spin polarization of thermoelectric conductivity and the Seebeck coefficient of ferromagnetic thin films. [ABSTRACT FROM AUTHOR]

In this work, using the transfer-matrix method, the optical transport process is investigated, with graphene inserted into multilayer dielectric structures, theoretically and numerically in the THz regime. When the incident frequency is lower than the graphene Fermi energy, the optical intra-band transitions provide the main contribution to the graphene surface current. The absorptance can be enhanced to about 50% with only one graphene/dielectric layer in air. When increasing the number of dielectric layers coated with graphene, the absorption increases. Periodic absorption peaks are observed in multilayer structures. The positions of the absorption peaks as a function of the frequency and the incident angle are in accordance with the positions of the abrupt change in the reflection coefficient phase and of the imaginary solution of the Bloch wavevector in expanding periodic structures using Bloch theorem. [ABSTRACT FROM AUTHOR]

The voltage noise characteristic and sensitivity of magnetic tunnel junction sensors are crucial for ultralow field detection. In this work, we used a soft magnetic material electrode Co70.5Fe4.5Si15B10 as a sensing layer to improve the sensitivity. Then, a bias field along the easy axis of a free layer was applied to improve the linearity and manipulate the sensitivity of magnetic tunnel junction sensors. More importantly, random telegraph noise was suppressed by the bias field, resulting in hysteresis-free performance. The highest sensitivity of 3.9%/Oe and the best field detectivity of 4.5nT/√Hz at 10 Hz without hysteresis have been achieved. The sensors showed excellent performance with CoFeSiB electrodes, indicating that it is an effective way to improve the performance of sensors by introducing the bias field. [ABSTRACT FROM AUTHOR]

We investigate the diffusion of charge and spin at 15K in p-type GaAs, combining transientgrating and energy-resolved microluminescence measurements to cover a broad range of photoelectron density. At very low optical power, in a unipolar nondegenerate regime, charge and spin diffuse at the same rate, implying that the spin-drag effects are negligible. Upon increasing the photoelectron concentration up to about 1016 cm-3, the charge diffusion constant decreases because of ambipolar electrostatic interactions with the slower-diffusing holes while the spin diffusion constant is reduced only weakly by the ambipolar interaction. A further increase in the excitation power causes increases in both the charge and spin diffusion constants as a consequence of the Pauli principle since the photoelectron gas becomes degenerate. [ABSTRACT FROM AUTHOR]

The effect of grain size and moisture content on the dynamic macroscopic response of granular geological materials was explored by performing uniaxial planar impact experiments on high purity, Oklahoma #1, sand samples composed of either fine (75-150 µm) or coarse (425-500 µm) grain sizes in either dry or fully water-saturated conditions. Oklahoma #1 sand was chosen for its smooth, quasi-spherical grain shapes, narrow grain size distributions, and nearly pure SiO2 composition (99.8wt. %). The water-saturated samples were completely saturated ensuring a two-phase mixture with roughly 65% sand and 35% water. Sand samples were dynamically loaded to pressures between 1 and 11GPa. Three-dimensional meso-scale simulations using an Eulerian hydrocode, CTH, were created to model the response of each sand sample. Multi-phase equations of state were used for both silicon dioxide, which comprised individual sand grains, and water, which surrounded individual grains. Particle velocity profiles measured from the rear surface of the sand, both experimentally and computationally, reveal that fine grain samples have steeper rise characteristics than coarse grain samples and water-saturated samples have an overall much stiffer response than dry samples. The experimentally determined particle velocity vs. shock velocity response of dry sand was linear over this pressure range, with little difference between the two grain sizes investigated. The experimental response for the water saturated sand exhibited a piecewise continuous response with a transition region between particle velocities of 0.6 km s-1 and 0.8 km s-1 and a pressure of 4.5-6GPa. Hypotheses for the cause of this transition region are drawn based on results of the meso-scale simulations. [ABSTRACT FROM AUTHOR]

We present a comparative study of the spin wave properties in two magnetic films patterned into an artificial square spin ice-like geometry. The array elements are rectangular islands with the same lateral dimensions but with different thicknesses: 10 nm and 30 nm. Using Brillouin light scattering, the frequencies of spin wave excitations were measured as a function of the magnetic field going from positive to negative saturation. We find substantial changes with thickness to spin wave mode frequencies and the number of detected modes. Frequencies of spin waves localized at element edges are observed to evolve non-monotonically with magnetic fields and soften at critical fields. These critical fields enable us to extract information of the magnetization reversal of individual islands within the array. Finally, we discuss the effects of separation between islands and examine the possibilities for dynamic coupling through the overlap of collective edge modes. [ABSTRACT FROM AUTHOR]

Modeling the charge-generation process is highly important to understand device physics and optimize power conversion efficiency of bulk-heterojunction organic solar cells (OSCs). Free carriers are generated by both ultrafast exciton delocalization and slow exciton diffusion and dissociation at the heterojunction interface. In this work, we developed a systematic numerical simulation to describe the charge-generation process by a modified drift-diffusion model. The transport, recombination, and collection of free carriers are incorporated to fully capture the device response. The theoretical results match well with the state-of-the-art high-performance organic solar cells. It is demonstrated that the increase of exciton delocalization ratio reduces the energy loss in the exciton diffusion-dissociation process, and thus, significantly improves the device efficiency, especially for the short-circuit current. By changing the exciton delocalization ratio, OSC performances are comprehensively investigated under the conditions of short-circuit and open-circuit. Particularly, bulk recombination dependent fill factor saturation is unveiled and understood. As a fundamental electrical analysis of the delocalization mechanism, our work is important to understand and optimize the high-performance OSCs. [ABSTRACT FROM AUTHOR]

CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 1016cm-3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. This allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination. [ABSTRACT FROM AUTHOR]

Emerging approaches to short-pulse laser-driven neutron production offer a possible gateway to compact, low cost, and intense broad spectrum sources for a wide variety of applications. They are based on energetic ions, driven by an intense short-pulse laser, interacting with a converter material to produce neutrons via breakup and nuclear reactions. Recent experiments performed with the high-contrast laser at the Trident laser facility of Los Alamos National Laboratory have demonstrated a laser-driven ion acceleration mechanism operating in the regime of relativistic transparency, featuring a volumetric laser-plasma interaction. This mechanism is distinct from previously studied ones that accelerate ions at the laser-target surface. The Trident experiments produced an intense beam of deuterons with an energy distribution extending above 100MeV. This deuteron beam, when directed at a beryllium converter, produces a forward-directed neutron beam with ~5 ? 109 n/sr, in a single laser shot, primarily due to deuteron breakup. The neutron beam has a pulse duration on the order of a few nanoseconds with an energy distribution extending from a few hundreds of keV to almost 80MeV. For the experiments on neutron-source spot-size measurements, our gated neutron imager was setup to select neutrons in the energy range of 2.5-35 MeV. The spot size of neutron emission at the converter was measured by two different imaging techniques, using a knife-edge and a penumbral aperture, in two different experimental campaigns. The neutronsource spot size is measured 1mm for both experiments. The measurements and analysis reported here give a spatial characterization for this type of neutron source for the first time. In addition, the forward modeling performed provides an empirical estimate of the spatial characteristics of the deuteron ion-beam. These experimental observations, taken together, provide essential yet unique data to benchmark and verify theoretical work into the basic acceleration mechanism, which remains an ongoing challenge. [ABSTRACT FROM AUTHOR]

Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spin-splitting in the resistivity ρxx agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity ρxx with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 × 1010 cm-2 in depletion mode to 1.7 × 1011 cm-2 in enhancement. [ABSTRACT FROM AUTHOR]

The effects on the local structure due to self-irradiation damage of Ga stabilized δ-Pu stored at cryogenic temperatures have been examined using extended x-ray absorption fine structure (EXAFS) experiments. Extensive damage, seen as a loss of local order, was evident after 72 days of storage below 15 K. The effect was observed from both the Pu and the Ga sites, although less pronounced around Ga. Isochronal annealing was performed on this sample to study the annealing processes that occur between cryogenic and room temperature storage conditions, where damage is mostly reversed. Damage fractions at various points along the annealing curve have been determined using an amplitude-ratio method, a standard EXAFS fitting, and a spherical crystallite model, and provide information complementary to the previous electrical resistivity- and susceptibility-based isochronal annealing studies. The use of a spherical crystallite model accounts for the changes in EXAFS spectra using just two parameters, namely, the crystalline fraction and the particle radius. Together, these results are discussed in terms of changes to the local structure around Ga and Pu throughout the annealing process and highlight the unusual role of Ga in the behavior of the lowest temperature anneals. [ABSTRACT FROM AUTHOR]

Nuclear weapons testing generates large volumes of glassy materials that influence the transport of dispersed actinides in the environment and may carry information on the composition of the detonated device. We determine the oxidation state of U and Fe (which is known to buffer the oxidation state of actinide elements and to affect the redox state of groundwater) in samples of melt glass collected from three U.S. nuclear weapons tests. For selected samples, we also determine the coordination geometry of U and Fe, and we report the oxidation state of Pu from one melt glass sample. We find significant variations among the melt glass samples and, in particular, find a clear deviation in one sample from the expected buffering effect of Fe(II)/Fe(III) on the oxidation state of uranium. In the first direct measurement of Pu oxidation state in a nuclear test melt glass, we obtain a result consistent with existing literature that proposes Pu is primarily present as Pu(IV) in post-detonation material. In addition, our measurements imply that highly mobile U(VI) may be produced in significant quantities when melt glass is quenched rapidly following a nuclear detonation, though these products may remain immobile in the vitrified matrices. The observed differences in chemical state among the three samples show that redox conditions can vary dramatically across different nuclear test conditions. The local soil composition, associated device materials, and the rate of quenching are all likely to affect the final redox state of the glass. The resulting variations in glass chemistry are significant for understanding and interpreting debris chemistry and the later environmental mobility of dispersed material. [ABSTRACT FROM AUTHOR]

The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8MeV proton fluence in a sub-linear manner reaching 0.63V at a fluence of 1×1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptorlike defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation. [ABSTRACT FROM AUTHOR]

We examined the crystal structure of the new thermoelectric material LaOBiS2-xSex, whose thermoelectric performance is enhanced by Se substitution, by using powder synchrotron X-ray diffraction and Rietveld refinement. The emergence of metallic conductivity and enhancement of the thermoelectric power factor of LaOBiS2-xSex can be explained with the higher in-plane chemical pressure caused by the increase of Se concentration at the in-plane Ch1 site (Ch = S, Se). High-temperature X-ray diffraction measurements for optimally substituted LaOBiSSe revealed anomalously large atomic displacement parameters (Uiso) for Bi and Ch atoms in the BiCh2 conduction layers. The anisotropic analysis of the atomic displacement parameters (U11 and U33) for the in-plane Bi and Ch1 sites suggested that Bi atoms exhibit large atomic displacement along the c-axis direction above 300 K, which could be the origin of the low thermal conductivity in LaOBiSSe. The large Bi vibration along the c-axis direction could be related to in-plane rattling, which is a new strategy for attaining low thermal conductivity and phonon-glass-electron-crystal states. [ABSTRACT FROM AUTHOR]

A droplet that moves on a solid substrate with a velocity higher than a certain critical velocity disintegrates, i.e., leaves behind residual droplets. Infrared laser illumination can be used to increase the droplet mobility and suppress the shedding of droplets. By means of two-dimensional numerical simulations, we studied the effect of a non-uniform temperature distribution on the dynamics of straight receding contact lines. A streamfunction-vorticity model is used to describe the liquid flow in the vicinity of the receding contact line. The model takes into account the thermocapillary shear stress and the temperature-dependent liquid viscosity and density. A second, coupled model describes the laser-induced displacement of the contact line. Our results show that the reduction of the liquid viscosity with increasing temperature is the dominant mechanism for the increase of the critical velocity. Thermocapillary shear stresses are important primarily for low substrate speeds. [ABSTRACT FROM AUTHOR]

The shape of a droplet moving on a solid substrate is largely determined by the mobility of its contact line. Above a certain critical velocity, the droplet typically disintegrates and leaves residual liquid behind. We studied experimentally how localized infrared laser illumination can stabilize it against the progressive loss of liquid. We systematically varied the substrate velocity, the laser power, and the laser spot position and found that the critical velocity of the droplet can be substantially increased. These results are potentially important for increasing throughput in immersion lithography systems. [ABSTRACT FROM AUTHOR]

The neutron imaging system at the National Ignition Facility is an important diagnostic tool for measuring the two-dimensional size and shape of the source of neutrons produced in the burning deuterium-tritium plasma during the stagnation phase of inertial confinement fusion implosions. Very few two-dimensional projections of neutron images are available to reconstruct the threedimensional neutron source. In this paper, we present a technique that has been developed for the 3D reconstruction of neutron and x-ray sources from a minimal number of 2D projections. We present the detailed algorithms used for this characterization and the results of reconstructed sources from experimental data collected at Omega. [ABSTRACT FROM AUTHOR]

Artificial magnetic spin-ice nanostructures provide an ideal platform for the observation of magnetic monopoles. The formation of a magnetic monopole is governed by the motion of a magnetic charge carrier via the propagation of domain walls (DWs) in a lattice. To date, most experiments have been on the static visualization of DW propagation in the lattice. In this paper, we report on the low field dynamics of DW in a unit spin-ice structure measured by magnetoresistance changes. Our results show that reversible DW propagation can be initiated within the spin-ice basis. The initial magnetization configuration of the unit structure strongly influences the direction of DW motion in the branches. Single or multiple domain wall nucleation can be induced in the respective branches of the unit spin ice by the direction of the applied field. [ABSTRACT FROM AUTHOR]