102 results on '"Franco, Jacopo"'
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2. Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques
3. Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices
4. A multi-energy level agnostic approach for defect generation during TDDB stress
5. A multi-energy level agnostic simulation approach to defect generation
6. Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
7. Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes
8. Bayesian inference assessment of protein secondary structure analysis using circular dichroism data – how much structural information is contained in protein circular dichroism spectra?
9. On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis.
10. LaSiO x - and Al 2 O 3 -Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration.
11. Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET.
12. Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si–H Bond Dissociation/Passivation Energy Distributions.
13. On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in Iota Iota Iota V/High-k MOS Stack
14. Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration.
15. Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration.
16. On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- ${k}$ MOS Stack.
17. NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling.
18. Buried silicon-germanium pMOSFETs: Eanalysis in VLSI logic circuits under aggressive voltage scaling
19. Reliable Time Exponents for Long Term Prediction of Negative Bias Temperature Instability by Extrapolation.
20. A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET.
21. Single Defect Discharge Events in Vertical-Nanowire Tunnel-FETs.
22. Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach.
23. Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow.
24. Reliability aware simulation flow: From TCAD calibration to circuit level analysis.
25. Smart-array for pipelined BTI characterization.
26. Channel Hot Carriers in SiGe and Ge pMOSFETs.
27. Intrinsic Robustness of TFET Subthreshold Swing to Interface and Oxide Traps: A Comparative PBTI Study of InGaAs TFETs and MOSFETs.
28. Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs.
29. Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs.
30. Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks.
31. An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel.
32. BTI and other reliability issues in high mobility channel devices discussion group.
33. Design and simulation of on-chip circuits for parallel characterization of ultrascaled transistors for BTI reliability.
34. Impact of Off State Stress on advanced high-K metal gate NMOSFETs.
35. Introduction.
36. Degradation Mechanisms.
37. Conclusions and Perspectives.
38. Channel Hot Carriers and Other Reliability Mechanisms.
39. Negative Bias Temperature Instability in Nanoscale Devices.
40. Negative Bias Temperature Instability in (Si)Ge pMOSFETs.
41. Techniques and Devices.
42. FrontMatter.
43. A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs.
44. NBTI in (Si)Ge Channel Devices.
45. Thermal stability and reliability in SiGe pMOSFETs for sub-20nm DRAM applications.
46. Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs.
47. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors.
48. (Late) Essential ingredients for modeling of hot-carrier degradation in ultra-scaled MOSFETs.
49. Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI variability.
50. Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations.
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