97 results on '"Hudgins, Jerry L."'
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2. Chapter 3 - Thyristors
3. Contributors
4. Physics-based model of planar-gate IGBT including MOS side two-dimensional effects
5. Modeling of MOS-side carrier injection in trench-gate IGBTs
6. Transient electrothermal simulation of power semiconductor devices
7. Exploration of power device reliability using compact device models and fast electrothermal simulation
8. Modeling of IGBT resistive and inductive turn-on behavior
9. Physical modeling of fast p-i-n diodes with carrier lifetime zoning, Part I: device model
10. Physical modeling of fast p-i-n diodes with carrier lifetime zoning, Part II: parameter extraction
11. Modeling and Simulation of a 5.8kV SiC PiN Diode for Inductive Pulsed Plasma Thruster Applications
12. 5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits
13. Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit
14. Simulation and optimization of diode and insulated gate bipolar transistor interaction in a chopper cell using MATLAB and Simulink
15. Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models
16. Wide and narrow bandgap semiconductors for power electronics: A new valuation
17. Temperature effects on trench-gate punch-through IGBTs
18. Circuit simulator models for the diode and IGBT with full temperature dependent features
19. Characterization and modeling of high-voltage field-stop IGBTs
20. An assessment of wide bandgap semiconductors for power devices
21. Carbon Nano-Onion Ultracapacitor Model
22. 3 - Thyristors
23. 5 - SiC and GaN Power Semiconductor Devices
24. A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices.
25. Contributors
26. Bearing Fault Diagnosis of Direct-Drive Wind Turbines Using Multiscale Filtering Spectrum.
27. Monitoring IGBT's health condition via junction temperature variations.
28. A Real-Time Thermal Model for Monitoring of Power Semiconductor Devices.
29. Modeling of Wide-Bandgap Power Semiconductor Devices—Part II.
30. Modeling of Wide Bandgap Power Semiconductor Devices—Part I.
31. CHAPTER 4: IGBT Under an Inductive Load-Switching Condition in Simulink®: 4.2: DIODE SUBSYSTEM.
32. CHAPTER 5: Parameter Extraction: 5.2: PARAMETER ESTIMATION FOR IGBTS.
33. CHAPTER 5: Parameter Extraction: 5.1: PARAMETER ESTIMATION FOR POWER DIODES.
34. CHAPTER 4: IGBT Under an Inductive Load-Switching Condition in Simulink®: 4.3: NPT IGBT SUBSYSTEM.
35. CHAPTER 4: IGBT Under an Inductive Load-Switching Condition in Simulink®: 4.1: ELECTRICAL CIRCUIT IN SIMULINK®.
36. CHAPTER 3: Modeling of a Power Diode and IGBT: 3.2: MODELING AN NPT IGBT.
37. CHAPTER 3: Modeling of a Power Diode and IGBT: 3.1: MODELING A POWER DIODE.
38. CHAPTER 2: Physics of Power Semiconductor Devices: 2.1: ON-STATE OPERATION OF BIPOLAR DEVICES.
39. APPENDIX A: Appendix.
40. CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.5: TEMPERATURE-DEPENDENT PARAMETERS OF NPT IGBT AND THEIR CONNECTION TO THE ELECTRICAL MODEL.
41. CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.4: TEMPERATURE DEPENDENT PARAMETERS OF DIODES AND THEIR CONNECTION TO AN ELECTRICAL MODEL.
42. CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.2: REALIZATION OF EQUIVALENT RC NETWORK.
43. CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.3: REALIZATION OF ONE-DIMENSIONAL FOURIER-SERIES THERMAL MODEL.
44. CHAPTER 2: One-Dimensional Thermal Model: 2.4: ONE-DIMENSIONAL FOURIER SERIES THERMAL MODEL.
45. CHAPTER 2: One-Dimensional Thermal Model: 2.3: EQUIVALENT RC NETWORK THERMAL MODEL.
46. CHAPTER 2: One-Dimensional Thermal Model: 2.2: HEAT CONDUCTION PROBLEM IN DBC STRUCTURE.
47. CHAPTER 1: Temperature Dependencies of Material and Device Parameters: 1.2: TEMPERATURE DEPENDENCIES.
48. A unified silicon/silicon carbide IGBT model.
49. INVERTER THYRISTORS.
50. Parameter Extraction Procedure for Vertical SiC Power JFET.
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