64 results on '"Hua, Mengyuan"'
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2. HyFET—A GaN/SiC Hybrid Field-Effect Transistor
3. Enhance Gate Reliability and Threshold Voltage Stability of p-GaN Gate High-Electron-Mobility Transistors
4. Recent Progress in GaON for Performance Enhancement of GaN-based Devices
5. Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack.
6. E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability
7. Impact of OFF-state Gate Bias on Dynamic RON of p-GaN Gate HEMT
8. Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p -Gan Gate HEMTs.
9. E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability
10. Investigation of Time-Dependent VTH Instability Under Reverse-bias Stress in Schottky Gate p-GaN HEMT
11. Gate Reliability and VTH Stability Investigations of p-GaN HEMTs
12. E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability
13. Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress
14. Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET
15. Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs.
16. Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT.
17. Dynamic Threshold Voltage in $p$-GaN Gate HEMT
18. Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs
19. Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode
20. Temperature-Dependent Gate Degradation of $p$-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress
21. Characterization of Dynamic $I_{\text{OFF}}$ in Schottky-Type $p$-GaN Gate HEMTs
22. Identifying the Location of Hole-Induced Gate Degradation in $\text{LPCVD} -\text{SiN}_{x}/\text{GaN}$ MIS-FETs under High Reverse-Bias Stress
23. Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline $\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}}$ Channel
24. High-performance Enhancement-mode GaN Power MIS-FET with Interface Protection Layer
25. Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNx Gate Dielectric
26. GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage.
27. E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs.
28. Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations.
29. Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs.
30. An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss
31. Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs
32. Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices
33. High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer
34. Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
35. Nitridation of GaN surface for power device application: A first-principles study
36. Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode.
37. Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs.
38. Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET.
39. Dynamic OFF-State Current (Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$) in ${p}$ -GaN Gate HEMTs With an Ohmic Gate Contact.
40. Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack.
41. Performance enhancement and characterization techniques for GaN power devices
42. Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
43. Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance.
44. Dependence of V\text {TH} Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET.
45. 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode.
46. Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy.
47. 650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric
48. Dynamic R\mathrm {ON} of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination.
49. Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer.
50. Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT.
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