48 results on '"King-Yuen Wong"'
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2. Tracking based motion segmentation under relaxed statistical assumptions.
3. Characterization and analysis of the temperature-dependent on -resistance in AlGaN/GaN lateral field-effect rectifiers
4. Integrated voltage reference generator for GaN smart power chip technology
5. Motion Segmentation by EM Clustering of Good Features.
6. Smart GaN platform: Performance & challenges
7. GaN cascode performance optimization for high efficient power applications
8. Integrated Voltage Reference Generator for GaN Smart Power Chip Technology
9. High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation
10. Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications
11. Tracking based motion segmentation under relaxed statistical assumptions
12. Device technology for GaN-based sensing and control ICs
13. CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications
14. Analysis of the frequency response of SAW filters using finite-difference time-domain method
15. Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment
16. AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability
17. GaN smart power IC technology
18. Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode
19. Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques
20. Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT
21. High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme
22. High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode
23. GaN Zero-Bias RF Mixer using a Lateral Field-Effect Rectifier
24. Integrated voltage reference and comparator circuits for GaN smart power chip technology
25. HEMT‐compatible lateral field‐effect rectifier using CF 4 plasma treatment
26. Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters
27. Temperature dependence of AlGaN/GaN HEMT-compatible lateral field effect rectifier
28. High-Temperature Performance of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier
29. High-Performance AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifiers
30. Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure
31. Planar Two-dimensional Electron Gas (2DEG) IDT SAW Filter on AlGaN/GaN Heterostructure
32. Fintie-difference time-domain simulation of dispersive layered saw filters including electrode massloading
33. 6A-5 Analysis of SAW Filter Fabricated on Anisotropic Substrate Using Finite-Difference Time-Domain Method
34. 6C-5 Planar Integration of SAW Filter with HEMT on AlGaN/GaN Heterostructure Using Fluoride-based Plasma Treatment
35. Motion Segmentation by EM Clustering of Good Features
36. EM Clustering of Incomplete Data Applied to Motion Segmentation
37. High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation
38. High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors
39. Surface acoustic wave device on AlGaN∕GaN heterostructure using two-dimensional electron gas interdigital transducers
40. High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode.
41. Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters.
42. Temperature dependence of AlGaN/GaN HEMT-compatible lateral field effect rectifier.
43. Planar Two-dimensional Electron Gas (2DEG) IDT SAW Filter on AlGaN/GaN Heterostructure.
44. Fintie-difference time-domain simulation of dispersive layered saw filters including electrode massloading.
45. Zero-Bias Mixer Based on A1GaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications.
46. Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode.
47. Single-Chip Boost Converter Using Monolithically Integrated A1GaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT.
48. High-Performance AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifiers.
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