1. Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery
- Author
-
Sangwan Kim, Korok Chatterjee, Ava J. Tan, Chenming Hu, Asif Islam Khan, Golnaz Karbasian, Sayeef Salahuddin, and Ajay K. Yadav
- Subjects
010302 applied physics ,Materials science ,business.industry ,Transistor ,Gate dielectric ,Electrical engineering ,Silicon on insulator ,Time-dependent gate oxide breakdown ,02 engineering and technology ,Self-aligned gate ,021001 nanoscience & nanotechnology ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,law.invention ,Atomic layer deposition ,law ,Gate oxide ,0103 physical sciences ,Optoelectronics ,Field-effect transistor ,Electrical and Electronic Engineering ,0210 nano-technology ,business - Abstract
We demonstrate a nonvolatile single transistor ferroelectric gate memory device with ultra-thin (5.5 nm) Hf0.8Zr0.2O2 (HZO) fabricated using a self-aligned gate last process. The FETs are fabricated using silicon-on-insulator wafers, and the ferroelectric is deposited with atomic layer deposition. The reported devices have an ON/OFF drain current ratio of up to 106, a read endurance of $>10^{10}$ read cycles, and a program/erase endurance of 107 cycles. Furthermore, healing of the transistor after gate insulator breakdown is demonstrated.
- Published
- 2017