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126 results on '"GALLIUM nitride synthesis"'

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1. Electron-phonon relaxation and excited electron distribution in gallium nitride.

2. Determination of absolute value of quantum efficiency of radiation in high quality GaN single crystals using an integrating sphere.

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3. RBS/C and TEM characterization of GaN nanolayer obtained by IBS on (001) GaAs.

4. Synthesis of Galium Nitride Thin Films using Sol-Gel Dip Coating Method.

5. High temperature hydrogen gas sensing property of GaN prepared from α-GaOOH.

6. High-quality GaN epitaxially grown on Si substrate with serpentine channels.

7. New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications.

8. Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces.

9. Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy.

10. Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications.

11. The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes.

12. GaNO colloidal nanoparticles synthesis by nanosecond pulsed laser ablation: Laser fluence dependent optical absorption and structural properties.

13. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution.

14. Amorphous GaN@Cu Freestanding Electrode for High-Performance Li-Ion Batteries.

15. Synthesis of Ga(S 2 CN(CH 3 ) 2 ) 3 nanoparticles using ultrasonic spray method as GaN precursor.

16. Doping marker layers for ex situ growth characterisation of HVPE gallium nitride.

17. Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment.

18. Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN.

19. Moisture-Assisted Preparation of Compact GaN:ZnO Photoanode Toward Efficient Photoelectrochemical Water Oxidation.

20. Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE.

21. Atomistic analysis of the electronic structure of m-plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations.

22. Effect of SiC-on-Si template residual stress on GaN residual stress and crystal quality.

23. Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy.

24. High-resistance GaN-based buffer layers grown by a polarization doping method.

25. Impact of interface traps on switching behavior of normally-OFF AlGaN/GaN MOS-HEMTs.

26. Comparison of silicon, SiC and GaN power transistor technologies with breakdown voltage rating from 1.2 kV to 15 kV.

27. Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures.

28. Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy.

29. On-chip addressable Schottky-on-heterojunction light-emitting diode arrays on AlGaN/GaN-on-Si platform.

30. Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect.

31. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride.

32. Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.

33. Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy.

34. Selective area epitaxy of monolithic white-light InGaN/GaN quantum well microstripes with dual color emission.

35. Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO(100) Substrates.

36. Synthesis and optical characterization of pure and cobalt doped gallium nitride nanocrystals.

37. Space-and-time-resolved spectroscopy of single GaN nanowires.

38. Neutral anodic etching of GaN for vertical or crystallographic alignment.

39. Ultra-low threshold gallium nitride photonic crystal nanobeam laser.

40. Synthesis and optical properties of iron doped gallium nitride nanostructures by sol gel method.

41. Light output improvement of 10 W operated vertical LEDs via surface roughening using a commercialized developer.

42. Defect-Related Luminescence in Undoped GaN Grown by HVPE.

43. Insertion of Benzonitrile into Al-N and Ga-N Bonds: Formation of Fused Carbatriaza-Gallanes/Alanes and Their Subsequent Synthesis from Amidines and Trimethyl-Gallium/Aluminum.

44. Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors.

45. Synthesis Of GaN:ZnO Solid Solution By Solution Combustion Method And Characterization For Photocatalytic Application.

46. Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer.

47. Epitaxial growth of a self-separated GaN crystal by using a novel high temperature annealing porous template.

48. SEMIPOLAR GALLIUM NITRIDE ON SILICON: TECHNOLOGY AND PROPERTIES.

49. Computational synthesis of single-layer GaN on refractory materials.

50. Defect reduction in semipolar {1013} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth.