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In deep neural network (DNN) accelerators, it is expensive to transfer model parameters from the main memory to the processing elements. Data movement accounts for a large number of the inference latency and energy consumption. In this paper, we present three position-based techniques to compress the DNN model parameters. The techniques could lead to significant energy and performance improvement. The three presented compression techniques are lossless. The first technique takes into consideration the regularly repeat property of the DNN weights to compress them. The second technique saves the relative distance between weights instead of the weights to compress the model. The third technique applies Huffman coding on the relative distance based on the second technique. The proposed techniques are assessed on several DNNs. The results show that, the first technique could decrease 38% of latency and 36% energy, respectively. The second technique could decrease 41% of latency and 39% energy, respectively. The third technique could decrease 45% of latency and 43% energy, respectively. Applying Huffman code could achieve additional 7% reduction in both latency and energy based on the second technique. [ABSTRACT FROM AUTHOR]

The discovery of polar metals challenges long‐standing assumptions about the incompatibility between polar order and metallicity. However, despite recent progress, the mechanism allowing the coexistence of these supposedly forbidden properties remains unclear. Herein, carriers are introduced by constructing a symmetric polar/nonpolar interface in the KNbO3/BaTiO3 (KNO/BTO) superlattice (SL), enabling the coexistence of ferroelectric and metallic properties. A first‐principles analysis of the evolution of polar distortion and metallicity in the KNO/BTO SL under biaxial strain in the face to explore the dependence of the two at the microscopic level is performed. It is found that compressive strain enhances polarization distortion while reducing conductivity from three dimensions to two dimensions, indicating a weak coupling mechanism between carriers and polarization. Furthermore, it is shown that the presence of holes strengthens the TiO (NbO) covalent bonds, resulting in an unexpected enhancement of the polarization properties of the KNO/BTO SL. Therefore, it is proposed using the carrier screening effect and covalent bonding synergies as a framework for understanding the interaction between ferroelectricity and free carriers, rather than just a single factor therein. These results provide new theoretical insights for designing robust polar metals in perovskite ferroelectrics. [ABSTRACT FROM AUTHOR]

The original article can be found online at https://doi.org/10.1007/s11227-023-05339-4.Correction to: The Journal of Supercomputinghttps://doi.org/10.1007/s11227-023-05339-4In this article, the author name Minghua Tang was incorrectly written as Minging Tang.The original article has been corrected.Publisher's NoteSpringer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.By Minghua Tang; Enrico Russo and Maurizio PalesiReported by Author; Author; Author [Extracted from the article]

For 2D mesh based Network-on-Chip (NoC), the prohibited turns of routing algorithms should be repetitively distributed in order for the routing algorithms to be implemented by logic-based circuit. In this paper, we aim to exploit the designing space for logic-based routing algorithms, and propose new logic-based routing algorithms that outperform the state-of-the-art counterparts. Toward this direction, we firstly construct all routing algorithms for $5 \times 5$ 2D mesh topology. Then we select those routing algorithms which have repetitive prohibited turns across both the network rows and columns. In addition, we chose those routing algorithms that have smaller routing pressures than Odd-Even routing algorithm. Then the routing algorithms for 2D mesh topology ranging from $6 \times 6$ to $15 \times 15$ are respectively constructed according to the prohibited turns distribution of the selected routing algorithms. Two routing algorithms that have smaller routing pressures than Odd-Even routing algorithm are obtained for all considered networks. The obtained logic-based routing algorithms are called as Repetitive Turn Model (RTM). Simulation results show that RTM could achieve up to 51% performance improvement as compared to Odd-Even routing algorithm. [ABSTRACT FROM AUTHOR]

In this paper, we designed double V-shaped Al/Ni multilayer energy-containing microdevices with different V-angles, and we performed finite element modeling and simulation of the heat transfer process of the designed energy-containing microdevice. Temperature-dependent resistivity was introduced to effectively simulate the phase change during ignition. We simulated the temperature and current density distribution in the central region of the Al/Ni multilayer energy-containing microdevice and predicted the ignition voltage threshold for the specific device structure. Al/Ni multilayer energy-containing microdevices with different V-angles were prepared by electron beam evaporation technology, and ignition experiments on the prepared devices under the excitation of 47 μF capacitance were conducted. The experimental results show that the critical voltage of ignition increases with the increase in the V-angle, which verifies the correctness of the proposed finite element model. [ABSTRACT FROM AUTHOR]

A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and transferred to the polyethylene terephthalate substrate. Then the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer layer film was used as the gate dielectric for the graphene FET. Based on the P(VDF-TrFE)/graphene heterojunction FET, Hall Bar structure was fabricated. The transport properties of the graphene channel at low temperature and retention characteristics at different temperature are investigated in detail. These special properties indicated that the GFET might be useful for many particular applications, such as a non-volatile memories, flexible electronic devices and phototransistors. [ABSTRACT FROM AUTHOR]

Network-on-Chip (NoC) has been made the communication infrastructure for many-core architecture. NoC are subject to congestion, which is claimed to be avoided by many researchers. However, there is no completely understanding of congestion in literature, which hinders its solution. Toward this direction, we firstly carry out study on congestion in this paper. We find that congestion usually occurs at a portion of nodes in a local network region. Moreover, local congestion will significantly decrease system performance and mostly impact some particular communication pairs. Then we attempt to solve local congestion by addressing different local region size, based on Divide-Conquer approach and routing pressure. It avoids congestion in every local region by keeping routing pressure of every local region minimum. Using different local region size will create different routings. Our study shows that the local region size is closely related with the routing performance. When local region size is 5 × 5 the optimal routing performance of large size network could be achieved. [ABSTRACT FROM AUTHOR]

How to precisely measure performance of routing algorithm is an important issue when studying routing algorithm of network-on-chip (NoC). The degree of adaptiveness is the most widely used metric in the literature. However, our study shows that the degree of adaptiveness cannot precisely measure performance of routing algorithm. It cannot account for why routing algorithm with high degree of adaptiveness may have poor performance. Simulation has to be carried out to evaluate performance of routing algorithm. In this paper, we propose a new metric of routing pressure for measuring performance of routing algorithm. It has higher precision of measuring routing algorithm performance than the degree of adaptiveness. Performance of routing algorithm can be evaluated through routing pressure without simulation. It can explain why congestion takes place in network. In addition, where and when congestion takes place can be pointed out without simulation. [ABSTRACT FROM AUTHOR]

As a scalable substitute of on-chip bus, network-on-chip (NoC) is proposed as the communication infrastructure in modern multi/many-core system-on-chip (SoC). Efficient communication in NoC is critical to the overall SoC performance. Although local congestion has an important impact on communication delay, it is barely taken into account when designing routing algorithms. In this paper, we propose an offline methodology of designing routing algorithm based on channel pressure model to address the local congestion issue. Specifically, the proposed methodology uses divide-conquer with the aim of generating high performance routing algorithms, which are able to balance the load over the network with a consequent reduction of local congestion. By using the proposed methodology, the obtained routing could achieve up to 37% performance improvement (in terms of average communication delay) as compared to the well-known odd-even routing algorithm for $15\times 15$ network. [ABSTRACT FROM PUBLISHER]

Thin films of ferroelectric Pb 0.82 La 0.08 Sr 0.1 Ti 0.98 O 3 (PLST) thin films were fabricated on LaNiO 3 buffered Pt/Ti/SiO 2 /Si substrates via the sol–gel deposition method. The dielectric and tunable properties were investigated as a function of DC bias and frequency to exhibit effect of LNO buffer layer on the tunable dielectric thin film. It shows that PLST thin film deposited on LNO/Pt/Ti/SiO 2 /Si substrates possesses higher dielectric constant and lower dielectric loss compared with the one directly deposited on Pt/Ti/SiO 2 /Si substrates. Furthermore, the tunability of the LNO-buffered PLST thin film is 68% at the DC bias of 20 V, which is higher than 60% of the pure PLST thin film. The results suggest the addition of LNO buffer layer could effectively improve the dielectric and tunable properties of PLST thin film and make it suitable for high quality dielectric tunable devices. [ABSTRACT FROM AUTHOR]

Abstract: High-protein (>30% of energy from protein or >1.2 g/kg/day) and moderately high-protein (22% to 29% of energy from protein or 1.0 to 1.2 g/kg/day) diets are popular for weight loss, but the effect of dietary protein on bone during weight loss is not well understood. Protein may help preserve bone mass during weight loss by stimulating insulin-like growth factor 1, a potent bone anabolism stimulator, and increasing intestinal calcium absorption. Protein-induced acidity is considered to have minimal effect on bone resorption in adults with normal kidney function. Both the quantity and predominant source of protein influence changes in bone with diet-induced weight loss. Higher-protein, high-dairy diets may help attenuate bone loss during weight loss. [Copyright &y& Elsevier]

Abstract: Secondary analyses of data from 2 studies were used to assess the effects of protein intake and sex on diet-induced changes in body composition. The primary hypothesis was that the changes of body composition via energy restriction (ie, lean body mass [LBM], fat mass [FM], and bone) would be sex and diet specific. For 12 weeks, 43 male (study 1) and 45 female (study 2) overweight and obese adults consumed an energy-deficit diet (750 kcal/d less than energy needs) containing either 0.8 (normal protein [NP], 21 men and 23 women) or 1.4 g protein∙kg−1∙d−1 (high protein [HP], 22 men and 22 women). Body composition measurements were performed at preintervention and postintervention. Over time, all research participants lost weight, LBM, and FM. Independent of protein intake, the men lost more LBM in the trunk (−0.9 vs −0.5 kg) and less in the legs (−1.5 vs −1.1 kg) compared with the women (P < .05). Independent of sex, the HP group lost less LBM in the trunk and legs than the NP group. These sex and protein intake responses resulted in the NP men losing the most LBM in the legs and the NP women losing the most LBM in the trunk. Over time, men lost more FM (−5.0 vs −3.9 kg) from the trunk and less from legs (−1.7 vs −2.1 kg) than women (P < .05), which resulted in a greater decrease of the android-to-gynoid fat ratio for the men. Protein intake did not influence these sex-specific responses or have any independent effects on changes in FM. In addition, protein intake did not influence bone mineral density responses over time; bone mineral density was reduced in women, but not in men. These findings indicate that higher protein intake during weight loss promotes the retention of LBM in both the trunk and legs despite the sex-specific changes in these body regions. [Copyright &y& Elsevier]

Abstract: Bi(Zn0.5,Ti0.5)O3 (BZT) doped Pb(Zr0.4,Ti0.6)O3 (PZT) films were fabricated using a chemical solution deposition method and were characterized intensively in the present work. It was discovered that the room temperature remnant polarization and zero-field longitudinal piezoelectric constant of the BZT-doped PZT film were enhanced by 23% and 30%, respectively, as compared with those of the undoped PZT film prepared under the same experiment conditions. In order to explain the improved ferroelectric properties, the phase structures of the BZT–PZT and undoped PZT films were experimentally investigated in a broad temperature range (from 30 to 600°C) by using the high temperature two-dimensional X-ray diffraction method. It was found that the improvement in ferroelectricity does not correspond to an elevated Curie temperature (T C) or a substantially larger tetragonality (c/a). The difference on the change of T C by doping of Bi-based perovskites in PZT solid solutions between this work and some previous investigations was explained on the basis of Zr/Ti ratio, and the necessity of an in-depth theoretical investigation was addressed. [Copyright &y& Elsevier]

Abstract: The surface potential and subthreshold characteristics in negative capacitance (NC) double-gate ferroelectric field-effect transistor (FeFET) were investigated by considering the metal–ferroelectric interface layer. The derived results indicates that the negative capacitance regime which allows for amplified surface potential and steeper subthreshold characteristics were significantly affected by the interface layer. This imposes a severe limit to the step-up conversion capability and steeper subthreshold (<60mV/dec) obtainable in the device. These results may provide some insight into the design and performance improvement for the low power dissipation FeFETs. [Copyright &y& Elsevier]

Although using table to implement routing algorithm has some advantages in network-on-chip (NoC), the router queries the routing table whenever a packet is to be forwarded. The querying time significantly increases the packet delay even if some methods have been proposed to shorten the table size. In mesh-based NoC, statistics shows that two neighbor routers have the same routing options for over 50% packets, on average. In this paper, we propose a technique to let packets pass through some routers without querying the routing table. Consequently, the time to query the routing table is significantly decreased. Simulation results show that this leads up to 16% decrease of average packet delay. [ABSTRACT FROM AUTHOR]

A p-channel metal–ferroelectric–insulator–silicon field-effect transistor (FET) with a 300-nm-thick \SrBi2\Ta2\O9 (SBT) ferroelectric film and a 10-nm-thick HfTaO layer on silicon substrate was fabricated and characterized. The device shows a nearly unchanged memory window of about 0.9 V after a \2 \times \10^11-cycles fatigue test, an on/off current ratio of more than \10^7, and a field-effect mobility of approximately 42 \cm^2/\V \cdot \s. Moreover, a drain-current on/off ratio as high as \10^5 was obtained with a fixed gate voltage of 2.5 V after over a \10^5-s elapsed time without any obvious degradation. These results may suggest that the Pt/SBT/HfTaO/Si FET is suitable for high-performance ferroelectric memory. [ABSTRACT FROM AUTHOR]

Background. Higher protein diets are promoted for effective weight loss. Striated tissues in omnivorous diets contain high-quality protein, but limited data exist regarding their effects on bone. Methods. To examine the effects of energy restriction–induced weight loss with higher protein omnivorous diets versus lower protein vegetarian diets on bone mineral density in overweight postmenopausal women, two randomized controlled feeding studies were conducted. In Study 1, 28 women consumed 750 kcal/day energy deficit diets with 18% energy from protein via lacto-ovo vegetarian sources (normal protein, n = 15) or 30% energy from protein with 40% of protein from lean pork (higher protein, n = 13, omnivorous) for 12 weeks. In Study 2, 54 women consumed their habitual diet (control, n = 11) or 1,250 kcal/day diets with 16% energy from nonmeat protein sources ( n = 14) or 26% energy from protein, including chicken ( n = 15) or beef ( n = 14) for 9 weeks. Results. Study 1: With weight loss (normal protein −11.2%, higher protein −10.1%), bone mineral density was not significantly changed in normal protein ( −0.003 ± 0.003 g/cm 2 , −0.3%) but decreased in higher protein ( −0.0167 ± 0.004 g/cm 2 , −1. 4%, group-by-time p < .05). Study 2: The control, nonmeat, chicken, and beef groups lost 1.5%, 7.7%, 10.4%, and 8.1% weight and 0.0%, 0.4%, 1.1%, and 1.4% bone mineral density, respectively. The change of bone mineral density was significant for chicken and beef compared with the control (group-by-time, p < .05). Markers of calcium metabolism and bone homeostasis in blood and urine were not changed over time or differentially affected by diet. Conclusion. Consumption of higher protein omnivorous diets promoted decreased bone mineral density after weight loss in overweight postmenopausal women. [ABSTRACT FROM PUBLISHER]

Abstract: The fact that latency increases abruptly once the on-chip network is saturated indicates that it is necessary to devise an effective flow control strategy. Through tracing the status of the network buffer space we found that the payload of the on-chip network cannot get beyond an upper bound to avoid vicious congestion. Specifically, quarter of the total network buffer space is such a threshold, which is termed Quarter Load Threshold (QLT). Based on this fact we present the Quarter Load Threshold (QLT) flow control strategy. The performance of the proposed strategy is evaluated by the open source simulator Noxim [Noxim: Network-on-Chip Simulator, http://sourceforge.net/projects/noxim, 2008]. Simulation results show that the on-chip network runs smoothly and no serious congestion is encountered any more. [ABSTRACT FROM AUTHOR]

Abstract: Bi4Ti3O12 (BIT) ferroelectric thin films with Dy3+ substitution (Bi4−x Dy x Ti3O12, x =0, 0.2, 0.4, 0.6, 0.8 and 1.0, respectively) were grown on Pt(111)/Ti/SiO2/Si(100) substrates using sol–gel method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed that after annealing at 710 °C for 10 min, all Bi4−x Dy x Ti3O12 films became polycrystallites. Among all the deposited thin films, the Bi3.4Dy0.6Ti3O12 specimen exhibits improved ferroelectric properties with the largest average remanent polarization (2Pr) of 53.06 μC/cm2 under applied field of 400 kV/cm and fatigue free characteristics (16% loss of 2Pr after 1.5×1010 switching cycles), indicating that it is suitable for non-volatile ferroelectric random access memories applications. [Copyright &y& Elsevier]

Ionic memristors can emulate brain‐like functions of biological synapses for neuromorphic technologies. Apart from the widely studied excitatory‐excitatory and excitatory‐inhibitory synapses, reports on memristors with the inhibitory‐inhibitory synaptic behaviors remain a challenge. Here, the first biaxially inhibited artificial synapse is demonstrated, consisting of a solid electrolyte and conjugated microporous polymers bilayer as neurotransmitter, with the former serving as an ion reservoir and the latter acting as a confined transport. Due to the migration, trapping, and de‐trapping of ions within the nanoslits, the device poses inhibitory synaptic plasticity under both positive and negative stimuli. Remarkably, the artificial synapse is able to maintain a low level of stable nonvolatile memory over a long period of time (≈60 min) after multiple stimuli, with feature‐inferencing/‐training capabilities of neural node in neuromorphic computing. This work paves a reliable strategy for constructing nanochannel ionic memristive materials toward fully inhibitory synaptic devices. [ABSTRACT FROM AUTHOR]

Nanowire structures with high-density interfaces are considered to have higher radiation damage resistance properties compared to conventional bulk structures. In the present work, molecular dynamics (MD) is conducted to investigate the irradiation effects and mechanical response changes of GaAs nanowires (NWs) under heavy-ion irradiation. For this simulation, single-ion damage and high-dose ion injection are used to reveal defect generation and accumulation mechanisms. The presence of surface effects gives an advantage to defects in rapid accumulation but is also the main cause of dynamic annihilation of the surface. Overall, the defects exhibit a particular mechanism of rapid accumulation to saturation. Moreover, for the structural transformation of irradiated GaAs NWs, amorphization is the main mode. The main damage mechanism of NWs is sputtering, which also leads to erosion refinement at high doses. The high flux ions lead to a softening of the mechanical properties, which can be reflected by a reduction in yield strength and Young's modulus. [ABSTRACT FROM AUTHOR]

In this study, a controllable equal-gap large-area silicon drift detector (L-SDD) is designed. The surface leakage current is reduced by reducing the SiO2-Si interface through the new controllable equal-gap design. The design of the equal gap also solves the problem whereby the gap widens due to the larger detector size in the previous SDD design, which leads to a large invalid area of the detector. In this paper, a spiral hexagonal equal-gap L-SDD of 1 cm radius is selected for design calculation, and we implement 3D modeling and simulation of the device. The simulation results show that the internal potential gradient distribution of the L-SDD is uniform and forms a drift electric field, with the direction of electron drift pointing towards the collecting anode. The L-SDD has an excellent electron drift channel inside, and this article also analyzes the electrical performance of the drift channel to verify the correctness of the design method of the L-SDD. [ABSTRACT FROM AUTHOR]

Although health benefits of the Dietary Approaches to Stop Hypertension (DASH) diet are established, it is not understood which food compounds result in these benefits. We used metabolomics to identify unique compounds from individual foods of a DASH-style diet and determined if these Food-Specific Compounds (FSC) are detectable in urine from participants in a DASH-style dietary study. We also examined relationships between urinary compounds and blood pressure (BP). Nineteen subjects were randomized into 6-week controlled DASH-style diet interventions. Mass spectrometry-based metabolomics was performed on 24-hour urine samples collected before and after each intervention and on 12 representative DASH-style foods. Between 66–969 compounds were catalogued as FSC; for example, 4-hydroxydiphenylamine was found to be unique to apple. Overall, 13–190 of these FSC were detected in urine, demonstrating that these unmetabolized food compounds can be discovered in urine using metabolomics. Although linear mixed effects models showed no FSC from the 12 profiled foods were significantly associated with BP, other endogenous and food-related compounds were associated with BP (N = 16) and changes in BP over time (N = 6). Overall, this proof of principle study demonstrates that metabolomics can be used to catalog FSC, which can be detected in participant urine following a dietary intervention. [ABSTRACT FROM AUTHOR]

High‐performance stretchable optoelectronic synaptic transistor arrays are key units for constructing and mimicking simulated neuromorphic vision systems. In this study, ultra‐low power consumption and low‐operation‐voltage stretchable all‐carbon optoelectronic synaptic thin film transistors (TFTs) using sorted semiconducting single‐walled carbon nanotubes (sc‐SWCNTs) modified with CdSe/ZnS quantum dots as active layers on ionic liquid‐based composite elastomer substrates are first reported. The resulting stretchable TFT devices show enhancement‐mode characteristics with excellent electrical properties (such as the record on/off ratios up to 105, negligible hysteresis, and small subthreshold swing), excellent mechanical tensile properties (such as the only 12.4% and 6.4% degradations of the carrier mobility after 20% vertical and horizontal strain stretching), and optoelectronic synaptic plasticity (for the recognition of Morse codes) with ultra‐low power consumptions (15.38 aJ) at the operating voltage from −1 to 0.2 V. At the same time, the designed nonvolatile conductance of the stretchable SWCNT optoelectronic synapse thin film transistors (SSOSTFTs) stimulated by UV light and the bending angle are first used to simulate stretchable neuromorphic vision systems (including the functions of the crystalline lens and optic cone cells as bionic eyes) for detecting the atmospheric environment with a record accuracy of 95.1% as a bionic eye. [ABSTRACT FROM AUTHOR]

Objective. To investigate the application effect of 24 h dynamic electrocardiogram in the diagnosis of asymptomatic myocardial ischemia with arrhythmia in elderly patients with coronary heart disease. Methods. A total of 206 elderly patients suspected of coronary heart disease (CHD) with asymptomatic myocardial ischemia and arrhythmia were selected as the research subjects. 24 h dynamic electrocardiogram and conventional electrocardiogram examinations were conducted. Coronary angiography was used as the gold standard to observe the performance of the two examination methods in the diagnosis of asymptomatic myocardial ischemia with arrhythmia in elderly patients with CHD. Results. Coronary angiography showed 174 positive cases and 32 negative cases among the 206 patients. The diagnostic results of a conventional electrocardiogram showed 150 positive cases and 20 negative cases. Its sensitivity, specificity, accuracy, positive predictive value, and negative predictive value were 86.21%, 62.50%, 82.52%, 92.59%, and 45.45%, respectively. The diagnostic results of 24 h dynamic electrocardiograms showed 168 positive cases and 29 negative cases. Its sensitivity, specificity, accuracy, positive predictive value, and negative predictive value were 96.55%, 96.63%, 95.63%, 98.25%, and 82.86%, respectively. The above results indicated that 24 h dynamic electrocardiogram was significantly better (P < 0.05). The detection rate of arrhythmia types by 24-hour dynamic electrocardiogram was significantly higher than that of conventional electrocardiogram (P < 0.05). Conclusion. 24 h dynamic electrocardiogram is helpful for the diagnosis of asymptomatic myocardial ischemia with arrhythmia in elderly patients with CHD and can improve the detection rate, thereby providing a basis for clinical diagnosis and treatment. [ABSTRACT FROM AUTHOR]

Ferroelectric random access memory (FeRAM) is a promising candidate to substitute static random access memory (SRAM) in lookup table (LUT) design due to its high density, high speed operation, anti-radiation and non-volatility. Ferroelectric gate field effect transistors (FeFETs) have been extensively studied and its usage in memory elements and basic analog circuit configurations has gained much interests. Here, we propose a novel architecture of FeFET-based LUT. An improved timing mode of FeRAM chip is analyzed to satisfy the performance of the FeFET-based LUT. Decoder, driver circuit and sensitive amplifier for FeFET array are also proposed. All the simulation results show that the proposed LUT works properly when the frequency reaches 500 MHz at 0.3 V differential input signal. [ABSTRACT FROM AUTHOR]

The usage of ferroelectric-gate field effect transistors (FeFET) in digital circuits has typically been its applications in memory. The use of FeFET to implement logic circuits is neither completely understood nor extensively studied. This paper presents simulations of electrical properties of a single FeFET and the resulting behavioral characterizations of FeFET-based basic logic circuits in a commercially available TCAD environment. The all-FeFET current mirror, CMOS inverter, 2-input-NAND and 2-input-NOR logic circuits show almost the same electrical characteristics as standard MOSFET ones, except for the negligible clockwise hysteresis under the condition of low voltage supply. Moreover, the all-FeFET current mode sensitive amplifier whose component units were all-FeFET common-source amplifier, current mirror and differential amplification, also works reasonably. [ABSTRACT FROM AUTHOR]

A structurally simple, highly reactive chlorinating reagent, N-chloro-N-fluorobenzenesulfonylamine (CFBSA), was conveniently prepared from inexpensive Chloramine B in high yield. A wide range of substrates were chlorinated with it to obtain products in good to high yields and appropriate selectivity. [ABSTRACT FROM AUTHOR]

In-sensor computing can simultaneously output image information and recognition results through in-situ visual signal processing, which can greatly improve the efficiency of machine vision. However, in-sensor computing is challenging due to the requirement to controllably adjust the sensor's photosensitivity. Herein, it is demonstrated a ternary cationic halide Cs0.05FA0.81MA0.14 Pb(I0.85Br0.15)3 (CsFAMA) perovskite, whose External quantum efficiency (EQE) value is above 80% in the entire visible region (400–750 nm), and peak responsibility value at 750 nm reaches 0.45 A/W. In addition, the device can achieve a 50-fold enhancement of the photoresponsibility under the same illumination by adjusting the internal ion migration and readout voltage. A proof-of-concept visually enhanced neural network system is demonstrated through the switchable photosensitivity of the perovskite sensor array, which can simultaneously optimize imaging and recognition results and improve object recognition accuracy by 17% in low-light environments. [ABSTRACT FROM AUTHOR]

Nanowire structures with high-density interfaces are considered to have higher radiation damage resistance properties compared to conventional bulk structures. In the present work, molecular dynamics (MD) is conducted to investigate the irradiation effects and mechanical response changes of GaAs nanowires (NWs) under heavy-ion irradiation. For this simulation, single-ion damage and high-dose ion injection are used to reveal defect generation and accumulation mechanisms. The presence of surface effects gives an advantage to defects in rapid accumulation but is also the main cause of dynamic annihilation of the surface. Overall, the defects exhibit a particular mechanism of rapid accumulation to saturation. Moreover, for the structural transformation of irradiated GaAs NWs, amorphization is the main mode. The main damage mechanism of NWs is sputtering, which also leads to erosion refinement at high doses. The high flux ions lead to a softening of the mechanical properties, which can be reflected by a reduction in yield strength and Young's modulus. [ABSTRACT FROM AUTHOR]

Lanthanum-doped ZnO (ZnLaO) polycrystalline thin films were deposited on Pt/Ti/SiO/Si substrates by a chemical solution deposition method. Metal/La-doped ZnO/Pt sandwich structures were constructed by depositing different top electrodes (Ag and Pt). Unipolar switching and bipolar switching characteristics were investigated in Pt/La-doped ZnO/Pt and Ag/La-doped ZnO/Pt structures, respectively. Compared with the undoped devices (Pt/ZnO/Pt and Ag/ZnO/Pt), the La-doped devices exhibits superior resistive switching performances, such as narrow distribution of the resistive switching properties ( R, R, V, and V), higher R/ R ratio and sharp switching transition. [ABSTRACT FROM AUTHOR]

Highlights: [•] The coexistence of BRS and URS behaviors are observed in the V-doped ZnO film. [•] The transition from URS to BRS is realized by controlling I cc and voltage range. [•] Both BRS and URS modes possess good retention property and endurance. [ABSTRACT FROM AUTHOR]

3D PdAg superstructures composed of hollow interior and 2D nanosheets shell, serving as highly active and selective EOR catalyst. [Display omitted] • We proposed for the first time that the Pd-Ag system facilitate the complete oxidation of ethanol. • A facile one-pot synthesis has been proposed for the synthesis of a holllow 3D open structure. • The 3D hollow PdAg superstructures achieve highly selective ethanol electrooxidation. Direct ethanol fuel cells (DEFCs) have been considered as future power devices for many portable applications. The ethanol oxidation reaction (EOR), that is, a multielectron process, suffers from low efficiency owing to the high selectivity to the 4e− pathway (C2 pathway) and low selectivity to the 12e− pathway (C1 pathway). The preparation of efficient catalysts with high C1 pathway selectivity is regarded as a promising and fascinating field. Herein, we first advance a one-pot synthesis of 3D PdAg superstructures (SSs) with a hollow interior and ultrathin nanosheet shell. PdAg SSs achieve a mass activity of 5.27 A mg−1 for the alkaline EOR and a Faraday efficiency of 22.7 % for the C1 pathway, which is 5.7 and 7.5 times higher than that of commercial Pd/C, respectively. Mechanism studies confirm that the construction of the Pd-Ag system greatly facilitates the oxidation of the C1 intermediates (*CH 3 and *CO) and enhances the C C bond cleavage ability of the catalyst. This work not only highlights an active Pd-based catalyst for the selective EOR, but also sheds light on the formation of 3D open nanostructure via self-assembly of 2D nanosheets. [ABSTRACT FROM AUTHOR]

Perovskite ferroelectrics (FEs) have high endurance to radiation. Strontium titanate (STO) (SrTiO3) is a kind of perovskite FE with a large dielectric constant, which has attracted a good deal of attention due to its excellent dielectric, photoelectric and optical properties. The proton radiation damage in STO thin films is investigated by computer simulations in this work. The threshold displacement energy is an important input parameter for Monte Carlo simulation based on a binary collision approximation model, so we first use molecular dynamics to calculate the averaged threshold displacement energy of Sr, O and Ti atom. The calculated values are 67, 50 and 136 eV, which are obviously larger than default value (25 eV) in the Stopping and Range of Ions in Matter (SRIM) code. The results of the SRIM simulation demonstrate the dependency of vacancy number and position distribution on the proton's energy and the angle of incidence. [ABSTRACT FROM AUTHOR]

In application scenarios such as astronautics, high-altitude aircraft, medical radiography, high-energy physics, and nuclear power plants, the irradiation resistance of electronic components is one of the basic requirements for their reliability. HfO 2 -based ferroelectric films have the advantages of high CMOS process compatibility, good miniaturizability, low operating voltage, and excellent irradiation resistance, which are the core materials for the new generation of irradiation resistance ferroelectric memories. In this paper, two kinds of metal-electrode ferroelectric capacitors, W/Hf 0.5 Zr 0.5 O 2 /W (WW) and Pt/Hf 0.5 Zr 0.5 O 2 /Pt (PP), have been prepared, and three gradient γ-irradiation experiments have been carried out on the two kinds of ferroelectric capacitors. The effect of metal electrodes on the irradiation resistance of Hf 0.5 Zr 0.5 O 2 ferroelectric thin films was carefully investigated by comparing and analyzing the statistical laws of polarization change and rectangularity change before and after irradiation of a large number of devices. The experimental results show that the WW devices have better irradiation resistance than PP devices, and we further explain the irradiation resistance mechanism by first-principle calculations and finite element analysis to verify the credibility of the experimental results. Finally, we conducted a comparative test of the fatigue and wake-up characteristics of the WW devices before and after irradiation, and the results show that the prepared W/Hf 0.5 Zr 0.5 O 2 /W devices can withstand very high total γ-dose radiation, reaching up to 13.86 Mrad(Si), and they are very suitable for the application of irradiation resistant electronics. [Display omitted] • The Hf 0.5 Zr 0.5 O 2 (HZO) thin films with outstanding ferroelectric properties were prepared. • The HZO ferroelectric thin films exhibited extremely high radiation tolerance (reaching up to 13.86 Mrad(Si)). • The effect of different metal electrodes on the irradiation resistance of HZO ferroelectric thin films was analyzed. [ABSTRACT FROM AUTHOR]

We report on the diameter dependence luminescence property of CsI(Na) crystals under X-ray excitation. When CsI(Na) crystal diameter decreases to nano-scale, the X-ray excited luminescence decay time is speeding up from ∼600 ns to ∼10 ns and 420 nm Na-related cathodeluminescence is affected drastically. The reason is confirmed that diameter reduction leads surface effect to accelerate the excitons' quenching. These measurement results identify a critical distinguished boundary ∼20 μm) of crystal diameter, which provide a new way to potential application of CsI(Na) crystals in the development of fast X-ray and gamma scintillator film detectors with large area. [ABSTRACT FROM AUTHOR]

A surface-potential-based model is developed for the symmetric long-channel junctionless double-gate MOSFET. The relationships between surface potential and gate voltage are derived from some effective approximations to Poisson's equation for deep depletion, partial depletion, and accumulation conditions. Then, the Pao–Sah integral is carried out to obtain the drain current. It is shown that the model is in good agreement with numerical simulations from subthreshold to saturation region. Finally, we discuss the strengths and limitations (i.e., threshold voltage shifts) of the JLFET, which has been recently proposed as a promising candidate for the JFET. [ABSTRACT FROM AUTHOR]

During heavy-ion experiments, the single-event gate rupture (SEGR) effects can still be observed in the vertical double-diffused power MOSFET (VDMOS) with radiation-hardened cells. Fault analysis demonstrates that the hot spots locate at the termination of the VDMOS. Then, several mitigation solutions for termination structure are discussed comprehensively by means of TCAD simulations. Finally, a combined hardness method with horizontally extending P+ region and adding floating N+ region is proposed. It is effective to reduce the electric field of gate oxide to below the calculated critical field, without additional masks and process steps. [ABSTRACT FROM AUTHOR]

The origin of the converse magnetoelectric (CME) effect in the Nb‐doped BaTiO3 (NBTO) polar metal is investigated by density functional theory. Unlike the Fe doping system, where the magnetic moment is chiefly contributed by eg orbitals of the Fe atom, the magnetic moment of the NBTO system is mainly contributed by the dxz/dyz orbitals of Ti (Nb) atoms and highly depends on the polarization intensity. When the in‐plane compressive strain η ≤ −2%, the magnetic moment of the NBTO system is zero because electrons predominantly occupy the dxy orbitals. However, the switching process of the ferroelectric polarization induces a strong CME effect with significant magnetic moment changes. Especially, the magnetic moment changes in the NBTO system with the compressive strain η ≤ −2%, which is dozens of times of that of the unstrained NBTO system. These results are useful for designing new ultrafast and low‐power information storage devices with remarkable electrically controlled magnetism. [ABSTRACT FROM AUTHOR]

• High speed THz linear polarization conversion is realized by electrical modulation. • THz polarization beam splitter for 1–4 THz is designed via simulation and experiment. • A coding and decoding prototype system of spintronic THz polarization is built. Terahertz (THz) wave as an important electromagnetic wave has been increasingly applied in wireless communication and imaging sensing technology. It has been an increasingly practical application. Ultra-high data rates in communication technology push toward a broadband, controllable polarization, and multiple transmission channels signal sources. Here, we propose a programmable polarization spintronics terahertz source (PP-STS), in which contains a controllable polarization spintronic THz emitter and a microcontroller unit. The PP-STS not only can generate THz waves with wide frequency bandwidth, but also has the function of switching the orthogonal linear polarization state of the generated THz waves flexibly. By coding the microcontroller unit, the designed PP-SPS can directly program the orthogonal linear polarization states as a series of information to transmit. To achieve the interconversions between digital codes and the THz polarization information, an optimum matching THz polarization beam splitter (THz-PBS) is also designed via simulations and experiments. The THz-PBS, as a decoder, can accurately split the transverse electric (TE) and transverse magnetic (TM) modes into two THz detectors. At last, a coding and decoding prototype system of spintronic THz polarization is built by integrating the PP-STS, the THz-PBS and two THz detectors. The send and receive information with high speed and accuracy are verified in this prototype system as well. We believe that our work takes THz applications for multiplexing communications one step further and sheds light on commercializing the PP-STS with exciting manufacturing lines for efficient and economical THz polarization technology. [ABSTRACT FROM AUTHOR]

Background: Astaxanthin is a red lipophilic carotenoid that is often undetectable in human plasma due to the limited supply in typical Western diets. Despite its presence at lower than detectable concentrations, previous clinical feeding studies have reported that astaxanthin exhibits potent antioxidant properties.Objective: We examined astaxanthin accumulation and its effects on gut microbiota, inflammation, and whole-body metabolic homeostasis in wild-type C57BL/6 J (WT) and β-carotene oxygenase 2 (BCO2) knockout (KO) mice.Methods: Six-wk-old male and female BCO2 KO and WT mice were provided with either nonpurified AIN93M (e.g., control diet) or the control diet supplemented with 0.04% astaxanthin (wt/wt) ad libitum for 8 wk. Whole-body energy expenditure was measured by indirect calorimetry. Feces were collected from individual mice for short-chain fatty acid assessment. Hepatic astaxanthin concentrations and liver metabolic markers, cecal gut microbiota profiling, inflammation markers in colonic lamina propria, and plasma samples were assessed. Data were analyzed by 3-way ANOVA followed by Tukey's post hoc analysis.Results: BCO2 KO but not WT mice fed astaxanthin had ∼10-fold more of this compound in liver than controls (P < 0.05). In terms of the microbiota composition, deletion of BCO2 was associated with a significantly increased abundance of Mucispirillum schaedleri in mice regardless of gender. In addition to more liver astaxanthin in male KO compared with WT mice fed astaxanthin, the abundance of gut Akkermansia muciniphila was 385% greater, plasma glucagon-like peptide 1 was 27% greater, plasma glucagon and IL-1β were 53% and 30% lower, respectively, and colon NOD-, LRR- and pyrin domain-containing protein 3 (NLRP3) inflammasome activation was 23% lower (all P < 0.05) in male KO mice than the WT mice.Conclusions: Astaxanthin affects the gut microbiota composition in both genders, but the association with reductions in local and systemic inflammation, oxidative stress, and improvement of metabolic homeostasis only occurs in male mice. [ABSTRACT FROM AUTHOR]

Total-ionizing dose effects on the resistive switching properties of HfO 2 /Al 2 O 3 bipolar resistive-random-access-memory devices under 60Co γ irradiation were investigated in this study. Insignificant impact was found for 60Co γ irradiation with a dose of 200 krad (Si) but the impact became significant for higher irradiation intensity of 1 Mrad (Si). The experiment results indicated that it is possible for device high resistance off-state or low resistance on-state to change after a total ionizing dose step stress threshold being surpassed. Moreover, it was found that the 60Co γ irradiation of 1 Mrad (Si) caused degradation of device high-resistance state, low-resistance state, set/reset voltages, and endurance characteristics, due to the simultaneous induce of oxygen vacancies and displacement damage. Unlabelled Image [ABSTRACT FROM AUTHOR]

By applying non-equilibrium molecular dynamics simulation, it is demonstrated that the thermal conductivity of the reported Si/Ge core-shell nanowires (NWs) can be further reduced by shell doping. The thermal conductivity of Si/Ge0.6Si0.4 core-shell NWs is only about 66% of that of Si/Ge core-shell NWs. By analyzing the participation ratios of eigenmodes, it is revealed that the large reduction in the thermal conductivity of Si/Ge0.6Si0.4 core-shell NWs stems from the strong localization of the phonon modes from 1.0 THz to 2.0 THz and the modes from 9.0 THz to 16.0 THz due to both impurity scattering and interface scattering associated with peculiar structure of shell doped silicon NWs. [ABSTRACT FROM AUTHOR]

The γ‐ray total dose radiation effects on Zr‐doped HfO2 (HfZrO) and Al‐doped HfO2 (HfAlO) ferroelectric thin films are comparatively studied. The J–E, P–E,C–V, εr–f curves and fatigue characteristics of both HfZrO and HfAlO thin films are measured and analyzed with the increasing total dose from 0 to 5 Mrad (Si). The remnant polarization (Pr) values of both HfZrO and HfAlO thin films first decrease and then increase with the increasing total dose. A competitive mechanism between the pinned domains and increasing polarization switching charges induced by radiation is proposed to explain this phenomenon. This work presents doped HfO2 film with great radiation tolerance for nuclear and aerospace applications. [ABSTRACT FROM AUTHOR]

Titanium nitride (TiN) film is a remarkable material for a variety of applications ranging from superhard coating to superconducting quantum devices, which can be easily oxidized when it works in the atmosphere. However, the study of its oxidation effect on the crystal and electronic structures of epitaxial TiN films is rare as yet. Here, we coherently synthesize TiN epitaxial films on MgO single crystal substrates via reactive magnetron sputtering and, then, dope oxygen into these films via a controllable oxidation process. The crystal and electronic structures are characterized by high-resolution x-ray diffraction, x-ray photoelectron spectra, and Raman spectra. It is revealed that the crystal structure remains to be of the rocksalt type in these films even with heavy oxygen doping. The data of temperature-dependent electrical transport measurements indicate that the superconducting critical temperature (kinetic inductance) decreases (increases) from 4.6 K (0.672 pH/□) in the pristine TiN film to 3.4 K (1.13 pH/□) in the film with a maximum oxygen doping level. Our work provides a controllable way to tune the superconductivity of TiN films, which enables the flexibility to engineer the resultant performance of TiN-based superconducting quantum devices. [ABSTRACT FROM AUTHOR]

The oxygen ion (O2−) loss effect during resistive switching (RS) cycles will inevitably lead to endurance degradation or even failure in oxide-based memristive devices. In this Letter, we propose an effective way to recover the cycling-induced endurance failed HfOx based memristive devices by utilizing oxygen plasma treatment (OPT). In the as-fabricated Pt/HfOx/Pt devices, a negative SET event is observed after consecutive normal RS cycles and eventually triggers endurance failure. The appearance of the intermediate resistance state at the initial stage of the negative SET cycle indicates a prominent reduction of the migration barrier of O2−, which accounts for the occurrence of negative SET after increasing cycles. Then, we recover the devices from endurance failure by moderate OPT, which can supply the available O2− in RS cycles. More importantly, the first recovered devices after endurance failure can be recovered again through OPT, which better proves the validity of the recovery method. This study could provide an effective approach for understanding and addressing the cycling-induced endurance failure issue in oxide-based memristive devices. [ABSTRACT FROM AUTHOR]

Abstract The lead-free multiferroic nano-multilayers composite thin films were fabricated on basis of ferroelectric (FE) Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) and ferromagnetic (FM) La 0.7 Ca 0.3 MnO 3 (LCMO) parents with 8 nm/6 nm periodicity, respectively. The crystal structure, switching of polarization, magnetization and temperature dependence of magnetoelectric coupling (ME) effect for the multiferroic BNT/LCMO composite thin films were investigated in detail, respectively. Ferroelectric behavior along with an enhanced remnant polarization (2 P r) of 42 μC/cm2, saturated magnetization around 151 emu/cm3, the enhanced piezoelectric coefficient d 33 of 263 pm/V and the enhanced magnetoelectric effect voltage coefficient of 72.1 mV/cm*Oe were obtained. The results show that the lead-free multiferroic films exhibit both good ferroelectric, dielectric and magnetic properties, as well as the enhanced ME effects, indicating that the coupling effects of electric and magnetic field exist in the fabricated Bi 3.15 Nd 0.85 Ti 3 O 12 /La 0.7 Ca 0.3 MnO 3 (BNT/LCMO) nano-multilayer thin films, and the strong ME effect originating from the magnetic-mechanical-electric interaction and interface coupling were demonstrated. These results can be particularly important for developing nano-composite multiferroic devices. Highlights • The lead-free BNT/LCMO nano-multilayers with 8/6 nm periodicity were fabricated. • The good ferroelectric properties and magnetic characteristics have been achieved. • The ME effects and mechanisms for the BNT/LCMO nano-multilayers were discussed. [ABSTRACT FROM AUTHOR]

We investigated electric-field modulation of ferromagnetic resonance (FMR) in Ni81Fe19 (NiFe)/Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) heterostructures at room temperature. BNTM thin films were deposited on a Pt (111)/Ti/SiO2/Si (100) substrate by the sol-gel method. The strain effect is produced by the electric field applied to the BNTM layer, which results in the FMR spectrum shift by tuning of the magnetic anisotropy of the NiFe microstrip devices. A strain-induced magnetic anisotropy change of 332 fJ/Vm is obtained by analyzing the experimental FMR spectra. We discussed an influence on spin orbit torques by applying an electric field to a ferroelectric (FE) layer via coupling to polarization with FMR experiments evidencing. The torque ratios τa/τb increased at first and then declined from the positive to negative electric field. As the value of the applied electric field changes from 129 kV/cm to 0 kV/cm, the variation of the torque ratios τa/τb (the field-like torque τa and damping-like torque τb) is about 0.07. Our results reported in this work demonstrate a route to realize a large magneto-electric coupling effect at room temperature and provide some insights into possible applications of the ferromagnetic/FE device. [ABSTRACT FROM AUTHOR]

In this work, the lead-free and BiFeO 3 doping Na 0.5 Bi 0.5 TiO 3 -BaTiO 3 thin films [(0.94- x )Na 0.5 Bi 0.5 TiO 3 -0.06BaTiO 3 - x BiFeO 3 (NBT-6BT- x BFO), x  = 0.00, 0.01, 0.03, 0.05 and 0.07] were deposited on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The enhanced ferroelectric properties and high energy-storage density have been achieved at 5% BiFeO 3 substitution. Moreover, the 5% BiFeO 3 doping Na 0.5 Bi 0.5 TiO 3 -BaTiO 3 (0.89NBT-0.06BT-0.05BFO) thin-films exhibited a high dischargeable energy density ( W recovered ) of 42.9 J/cm 3 with a corresponding energy-storage efficiency ( η ) of 65.7% under an electric field of 1720 kV/cm, and the high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 260 °C were demonstrated, and the charging and discharging characteristics demonstrate the faster microsecond discharge and large dielectric strength of the thin film capacitor. The results indicated that the 0.89NBT-0.06BT-0.05BFO thin-films might be promising environmentally friendly lead-free materials for energy-storage capacitor application. [ABSTRACT FROM AUTHOR]