1. GaN-on-Si Power Technology: Devices and Applications.
- Author
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Chen, Kevin J., Haberlen, Oliver, Lidow, Alex, Tsai, Chun lin, Ueda, Tetsuzo, Uemoto, Yasuhiro, and Wu, Yifeng
- Subjects
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ELECTRIC properties of gallium nitride , *POWER electronics , *ELECTRIC switchgear , *WIDE gap semiconductors , *METAL oxide semiconductor field-effect transistor circuits , *HETEROJUNCTIONS - Abstract
In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparisonwith other competingpower device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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