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Thin Bi films, especially noncentrosymmetric α-phase Bi films (α-Bi), have attracted considerable attention in recent years due to their intriguing physical properties such as ferroelectricity, nonlinear optical response, and coherent spin transport. However, the current experimental preparation of α-Bi films still presents substantial challenges, resulting in only isolated α-Bi islands being achieved. In this study, α-Bi/SrTiO3 (α-Bi/STO) was synthesized from a Bi2O2Se/STO (BOS/STO) heterostructure by depositing a Eu layer and reducing a BOS film. The so-formed α-Bi/STO interface features metallic conductivity with electron mobility of 7.7 × 104 cm2/V s and ultralow resistivity of 1 nΩ cm at 2 K, as well as high residual resistance ratios R300 K/R2 K up to 2353. Furthermore, we observed a complex weak antilocalization–weak localization–weak antilocalization crossover with increasing magnetic field at temperatures below 10 K. Our work presents the synthesis of α-Bi films, which could potentially serve as a valuable platform for experimental validation of diverse theoretical predictions associated with α-Bi heterostructures. Furthermore, this special synthesis method provides valuable insights into the preparation of other metastable films. [ABSTRACT FROM AUTHOR]

In this work, we report on the selective area growth (SAG) of InGaN multiple quantum well (MQW) structures to completely suppress the phenomenon of the Stokes shift in monolithically integrated photonic chips. The original green MQW region is designed as the integrated photodetector (PD), while the SAG blue MQW region acts as the integrated light-emitting diode (LED). The detection spectra of the PD can completely cover the emission spectra of the LED, greatly improving the on-chip optical connection by the complete suppression of the Stokes shift. Thus, the bottleneck of on-chip optical connection based on spectra-tail overlap in integrated photonic chips has been broken. Under the same operating current, the photocurrent of the SAG integrated PD reaches 11.8 μA, while the conventional chip achieves only 0.6 μA. By SAG method, the photo-to-dark current ratio of integrated PD exhibits about two orders of magnitude increase under 0 V bias. Undoubtedly, the SAG technology provides a strategy to further improve the on-chip optical signal transmission efficiency of the MQW structure integrated photonic chips. [ABSTRACT FROM AUTHOR]

This work explores an architecture for nonvolatile resistive random-access memory (RRAM) systems. The study proposes a self-rectifying RRAM device utilizing a two-terminal 1R selector that harmonizes the gate control efficacy of transistors with the inherent simplicity of diode structures. A rivet-like HfO2-based RRAM array is meticulously constructed through atomic layer deposition (ALD), aiming to enhance device performance and retention stability. The conformal fabrication technique of ALD method is critical in achieving uniform coverage of isolation layers and precise electrode placement, which is instrumental in the fabrication of high-performance memory cells. Empirical analyses indicate significant improvements in rectification and ON/OFF ratios compared to existing RRAM models, bolstered by compatibility with established CMOS processes. It reveals that these advances are conducive to scalable, high-density memory integration, positioning the RRAM as a viable contender for future computational applications that require high efficiency and neuromorphic computing capabilities. [ABSTRACT FROM AUTHOR]

Silicon–germanium heterostructures are a promising quantum circuit platform, but crucial aspects, such as the long-term charge dynamics and cooldown-to-cooldown variations, are still widely unexplored quantitatively. In this Letter, we present the results of an extensive bias cooling study performed on gated silicon–germanium quantum dots with an Al2O3 dielectric. Over 80 cooldowns were performed in the course of our investigations. The performance of the devices is assessed by low-frequency charge noise measurements in the band of 200 μHz to 10 mHz. We measure the total noise power as a function of the applied voltage during cooldown in four different devices and find a minimum in noise at 0.7 V bias cooling voltage for all observed samples. We manage to decrease the total noise power median by a factor of 6 and compute a reduced tunneling current density using Schrödinger–Poisson simulations. Furthermore, we show the variation in noise from the same device in the course of eleven different cooldowns performed under the nominally same conditions. [ABSTRACT FROM AUTHOR]

In this work, we present a stress-free AlN film with improved crystal quality assisted by h-BN and demonstrate the mechanical exfoliation of wafer-scale single-crystal AlN freestanding membrane and reveal the controllable exfoliation mechanism of AlN. Uniform and continuous wafer-scale h-BN is directly grown on c-plane sapphire using a flow modulation epitaxy mode by metal-organic chemical vapor deposition. The nucleation and evolution processes of quasi-van der Waals epitaxy (QvdWE) of AlN on h-BN are revealed. It is found that O2-plasma-treated h-BN can effectively promote the nucleation islands of AlN and contribute to the release of biaxial stress and the reduction of dislocation density in the epilayers. Eventually, the QvdWE growth of a stress-free AlN film (0.08 GPa) is achieved, and wafer-scale mechanical exfoliation of the AlN membrane has been realized. This work provides an effective strategy for the quality improvement of III-nitride films and paves the way for the vertical structure and flexible deep-ultraviolet optoelectronic devices. [ABSTRACT FROM AUTHOR]

We investigate the ultrafast carrier dynamics and spin–lattice interaction in strained and unstrained LaMnO3 films via temperature-dependent femtosecond transient optical spectroscopy. The transient reflectivity measurements show two characteristic relaxation processes in both types of films, which are attributed to electron–phonon coupling and phonon-assisted spin–lattice interaction, respectively. The carrier dynamics and coupling between lattice and spin system are well described with the three-temperature model; the spin–lattice relaxation time constant is dominated by the temperature-dependent spin specific heat. Both the electron–phonon coupling and the spin–lattice interaction are enhanced in the strained film, as a result of the modified band structure and orbital ordering under biaxial compressive strain. Our results reveal the critical role of strain in the photo-induced dynamical interactions in LaMnO3. [ABSTRACT FROM AUTHOR]

In this work, high-quality and centimeter-scale CsPbBr3 perovskite single-crystal thin films were grown using the metal-organic chemical vapor deposition method. Extremely flat surfaces without distinct grain boundaries were observed throughout the thin films. A high polarized degree of approximately 0.52 was measured from the single-crystal thin films by analyzing the polarization of the photoluminescence emission spectra. Low threshold amplified spontaneous emissions with an optical gain coefficient of 1215 cm−1 under the excitation energy of 301 μJ/cm2 and the highest value of 2857 cm−1 under the excitation energy of 1.08 mJ/cm2 were investigated under the excitation of a nanosecond laser at 266 nm. The CsPbBr3 single-crystal thin films showed excellent stability where the optical gain coefficient could be maintained over 1800 cm−1 after exposure to air for ten months. The results of this study not only provide high-quality single-crystal films for laser applications but also put forward a feasible scheme to improve the stability of the materials. [ABSTRACT FROM AUTHOR]

Optical analog computation is garnering increasing attention due to its innate parallel processing capabilities, swift computational speeds, and minimal energy requirements. However, traditional optical components employed for such computations are usually bulky. Recently, there has been a substantial shift toward utilizing nanophotonic structures to downsize these bulky optical elements. Nevertheless, these nanophotonic structures are typically realized in planar subwavelength nanostructures, demanding intricate fabrication processes and presenting limitations in their numerical apertures. In this study, we present a three-layer thin-film optical coating different from the conventional Fabry–Pérot nanocavity. Our design functions as a real-time Laplacian operator for spatial differentiation, and it remarkably boasts an ultrahigh numerical aperture of up to 0.7, enabling the detected edges to be sharper and have closely matched intensities. We also experimentally demonstrate its capacity for effective edge detection. This ultracompact and facile-to-fabricate thin-film spatial differentiator holds promising prospects for applications in ultrafast optical processing and biomedical imaging. [ABSTRACT FROM AUTHOR]

The interaction of domain structure and defects in ferroelectric thin films has been studied for decades. However, the role of dislocations and thermal stability of microstructures is still poorly studied. By combining transmission electron microscopy, x-ray diffraction experiments, and phase-field simulations, we show that dislocation pairs induced by post-annealing above 550 °C provide a stress field stabilizing a domains in 30 nm thick tetragonal PbTiO3 films on SrTiO3 substrate, initially exhibiting pure c domains. Based on phase-field simulations, we further discuss the effects of single dislocations and dislocation pairs on the nucleation of a-domains and the occurrence of non-ferroelastic 180° domains. Dislocations, and the possibility to tune them using an appropriate thermal annealing process, offer a path for modulating the domains and domain wall states and, thus, the physical properties of ferroelectric films. [ABSTRACT FROM AUTHOR]

Antiferroelectric materials hold great potential for energy storage applications. However, a significant challenge lies in the disparity ΔW between the rapid discharge energy density Wdis and the recoverable energy density Wre. Quantitative analysis is still lacking, and the ultra-fast reverse ferroelectric–antiferroelectric (FE–AFE) transition behavior at the microsecond scale remains unknown. In this study, a pulse technique was employed instead of the Sawyer–Tower method to obtain the "μs P-E loop" during rapid charge–discharge processes. The "μs P-E curve" clearly illustrates the distinct FE–AFE transition behavior during rapid discharge in comparison to low-frequency conditions. Under pulsed conditions, the FE–AFE transition field was observed to decrease, and even a "remanent polarization" was observed, leading to a reduction in discharge energy during fast discharge. Moreover, through the enhancement of relaxor behavior and the increased diffuseness of FE–AFE switching, the μs P-E loop tended to resemble that observed at low frequencies, thereby resulting in more efficient discharge performance. This study introduced a technique for investigating the ultra-fast FE–AFE transition. Furthermore, it unveiled the origin of ΔW and provided an effective method for achieving high discharge energy density. [ABSTRACT FROM AUTHOR]

Hydrogen-terminated diamond surfaces, emerging as a promising two-dimensional (2D) electron platform with great thermal and electronic properties, hold great potential for the next-generation high power and high frequency field effect transistor (FET). However, ideal gate dielectrics with high crystallinity and defect-free surfaces are still largely elusive. In this work, using the contamination-free pickup transfer method, hexagonal boron nitride (h-BN) flakes were fabricated on top of the hydrogen-terminated diamond surface to serve as a gate material and the passivation layer. The morphological and optical characterizations revealed the formation of homogeneous and intimate interface between h-BN and diamond. Benefiting from the h-BN gate dielectric layer, the maximum drain current density, subthreshold swing, and on/off ratio of diamond FET are measured to be −210.3 mA mm−1, 161 mV/dec, and 106, respectively. Especially, the transport measurement shows an almost constant Hall mobility of around 260 cm2 V−1 s−1 in the hole density range of 2 − 6 × 1012 cm−2, suggesting the excellent gate controllability of h-BN. Our results indicate that h-BN could form high-quality interface with hydrogen-terminated diamond, paving the way for the development of diamond-based electronic applications. [ABSTRACT FROM AUTHOR]

As a member of the emerging MXenes family, Nb2CS2 offers distinctive superconductivity, excellent electrical properties, and outstanding chemical stability, making it potentially useful for energy storage, medical imaging, and quantum computing. Herein, we systematically investigate how ultrahigh pressure affects the electrical properties of Nb2CS2. The results indicate that Nb2CS2 retains robust superconductivity with T c > 8 K up to the maximum applied pressure of 146.8 GPa. Moreover, the upper critical magnetic field H c 2 (0) of Nb2CS2 increases with pressure, and the Pauli limit is violated at pressures greater than 120 GPa. Meanwhile, H c 2 (0) increases to 19.3 T at 146.8 GPa, which is 4.8 times greater than at the initial pressure. Further analysis suggests that the significant enhancement of H c 2 (0) below 30 GPa comes from the sharp pressure-induced rise of carrier concentration as the interlayer distance decreases, and the significant increase in H c 2 (0) above 86 GPa may come from enhanced spin–orbit coupling or the possible unconventional superconducting pairing mechanisms. These results provide insights into the superconducting properties of MXene materials and offer guidelines for further research on electronic transport in Mxenes under ultrahigh pressure. [ABSTRACT FROM AUTHOR]

Ceramic-based capacitors with excellent recoverable energy storage density (Wrec) and efficiency (η) are greatly desired for pulsed capacitors but challenge as well. In this work, the high energy storage performance with an Wrec of 5.1 J/cm3, an η of 93.4%, and an ultrafast discharge–charge speed t0.9 of 72 ns is achieved in unusual interstitial and substitutional hybrid solid solution of Sr0.64Bi0.18Na0.18TiO3-ZnO (SBNT-Zn), in which two Zn2+ ions occupy one A-site, while one Zn2+ ion occupies one B-site of ABO3 perovskite lattice simultaneously. The addition of Zn2+ increases lattice distortion and breaks long-range ferroelectric order, resulting in more highly dynamic polar nanoregions, higher relaxation behaviors as well as larger polarization (ΔP). Moreover, the extraordinary hybrid solid solution configuration enhances the bandgap of SBNT-Zn and ZnO as a sintering aid refines grain size, both help to enhance electric breakdown strength. This work affirms the feasibility and reliability of forming a hybrid solid solution to develop high-performance ferroelectric materials. [ABSTRACT FROM AUTHOR]

Sodium-ion batteries (SIBs) are promising candidates for large-scale energy storage due to the abundance and low cost of sodium. However, graphite, the primary anode for commercial lithium-ion batteries, cannot be applied to SIBs. Its two-dimensional (2D) counterpart graphene is also inactive toward Na ions because of the delocalized π-electron network. We propose an idea to tackle this problem by introducing kagome topology into the honeycomb lattice, creating localized electronic states for improving the Na storage performance. Herein, we design a form of 2D carbon allotrope (named FSL-graphene), consisting of a kagome and a honeycomb sublattice. It has excellent stability, which is confirmed by the superior cohesive energy, positive phonon modes, high thermal stability, and strong mechanical stability. FSL-graphene exhibits an ultra-high theoretical Na storage capacity of 3347.1 mA h g−1, superior to most previously reported 2D anode materials. In addition, it possesses low diffusion energy barriers (0.19–0.23 eV), low open-circuit voltages (0.59–0.61 V), and small changes in lattice constants (1.3%). Furthermore, the electrolytes with high dielectric constants (e.g., ethylene carbonate) could improve the adsorption and migration of Na on FSL-graphene. This study provides an insight for designing high-performance carbon anode materials for SIBs by focusing on the topological lattices. [ABSTRACT FROM AUTHOR]