1. High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation.
- Author
-
Zhu, Liyang, Zhou, Qi, Yang, Xiu, Lei, Jiacheng, Chen, Kuangli, Luo, Zhihua, Huang, Peng, Zhou, Chunhua, Chen, Kevin J., and Zhang, Bo
- Subjects
PASSIVATION ,DIELECTRICS ,ANODES ,WIDE gap semiconductors ,DIODES ,MODULATION-doped field-effect transistors ,ALUMINUM gallium nitride ,METAL semiconductor field-effect transistors - Abstract
In this article, an ultrathin-barrier (UTB) AlGaN/GaN diode featuring metal–insulator–semiconductor (MIS)-gated hybrid anode (MG-HAD) and in situ Si
3 N4 cap passivation is demonstrated. The intrinsic turn-on voltage (VON ) as low as 0.31 V determined by the as-grown AlGaN-barrier thickness (4.9 nm) is obtained and the VON exhibits excellent uniformity. More importantly, benefit from the MIS-gated hybrid anode structure, the UTB MG-HAD features good thermal stability in reverse blocking capability. The device delivers a substantially low leakage less than 1~μm/mm at −300 V at high temperature (HT) up to 200 °C, which is more than 100 × lower than that in the reference device w/o gate dielectric. Besides, the device exhibits respectably improved dynamic characteristics due to the incorporation of in situ Si3 N4 -cap passivation layer and remote plasma pretreatment (RPP) prior to Al2 O3 gate dielectric deposition. The UTB MG-HAD featuring precisely VON modulation and low reverse leakage is of great interest for power electronic applications. [ABSTRACT FROM AUTHOR]- Published
- 2020
- Full Text
- View/download PDF