101. Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement.
- Author
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Shu Yang, Chunhua Zhou, Qimeng Jiang, Jianbiao Lu, Baoling Huang, and Chen, Kevin J.
- Subjects
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THERMALLY stimulated currents , *ELECTRIC currents , *ELECTRICAL resistivity , *SILICON spectra , *SUBSTRATES (Materials science) - Abstract
Thermally stimulated current (TSC) spectroscopy and high-voltage back-gating measurement are utilized to study GaN buffer traps specific to AlGaN/GaN lateral heterojunction structures grown on a low-resistivity Si substrate. Three dominating deep-level traps in GaN buffer with activation energies of ΔET1~0.54 eV, ΔET2~0.65 eV, and ΔET3~0.75 eV are extracted from TSC spectroscopy in a vertical GaN-on-Si structure. High back-gate bias applied to the Si substrate could influence the drain current in an AlGaN/GaN-on-Si high-electron-mobility transistor in a way that cannot be explained with a simple field-effect model. By correlating the trap states identified in TSC with the back-gating measurement results, it is proposed that the ionization/deionization of both donor and acceptor traps are responsible for the generation of buffer space charges, which impose additional modulation to the 2DEG channel. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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