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Your search keyword '"Chen, Kevin J."' showing total 38 results
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1. Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device.

2. 650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications.

3. GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits.

4. Monolithic Integration of Gate Driver and Protection Modules With P -GaN Gate Power HEMTs.

5. Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs.

6. Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p -Gan Gate HEMTs.

7. ON-Resistance Analysis of GaN Reverse-Conducting HEMT With Distributive Built-In SBD.

8. Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices.

9. Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests.

10. Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs.

11. Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices.

12. High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation.

13. Superjunction IGBT With Conductivity Modulation Actively Controlled by Two Separate Driving Signals.

14. A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications.

15. Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs.

16. Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs.

17. Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode.

18. Switching Transient Analysis for Normally-off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit.

19. Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack.

20. An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT.

21. Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices.

22. An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration.

23. Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations.

24. Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations.

25. GaN-on-Si Power Technology: Devices and Applications.

26. Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors With Photonic-Ohmic Drain.

27. Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications.

28. Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs.

29. Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate.

30. AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs.

31. A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters.

32. Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation.

33. Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs.

34. 900 V/1.6 m\Omega\cdotcm^2 Normally Off Al2O3/GaN MOSFET on Silicon Substrate.

35. A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs.

36. Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components.

37. Fabrication and Characterization of Enhancement-Mode High-\kappa~LaLuO3-AlGaN/GaN MIS-HEMTs.

38. Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs.

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